基于GaInNAs/GaAs的长波边缘发射器和vcsel

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014081

H. Riechert

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引用次数: 1

摘要

本文首次报道了基于gainnas的1300 nm左右边缘发射激光器的研究现状。在降低激光阈值的初步进展明显陷入停滞之后，当前研究活动的主要问题是:澄清热退火对GaInNAs层的影响，确定GaInNAs激光器中的主要重组机制，以及努力达到更长波长的激光发射。其次，该材料体系中的vcsel在1305 nm波长的连续波单模工作中显示出约1 mW的输出功率。10 Gbit/s的数据传输速度表明，这些设备可能会迅速进入下一代数据传输系统。

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GaInNAs/GaAs based long-wavelength edge emitters and VCSELs

This paper first reports the status of GaInNAs-based edge emitting lasers emitting around 1300 nm. After initial progress in reducing laser thresholds has apparently reached a standstill, the main issues of present research activities are: clarifying the effect of thermal annealing on GaInNAs layers, determining the dominant recombination mechanisms in GaInNAs lasers and efforts to reach laser emission at longer wavelengths. Secondly, VCSELs in this material system are presented which meanwhile demonstrate output powers around 1 mW in CW single mode operation at wavelengths up to 1305 nm. Demonstrated data transmission at 10 Gbit/s indicate that these devices may rapidly find their way into next generation data transmission systems.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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