si给体掺杂对调制掺杂GaN/Al/sub 0.07/Ga/sub 0.93/N多量子阱中激子局域化的影响

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014476

H. Haratizadeh, P. Paskov, G. Pozina, P. Holtz, B. Monemar

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引用次数: 0

摘要

利用光致发光(PL)和时间分辨PL测量，研究了Si掺杂对调制掺杂GaN/Al/sub 0.07/Ga/sub 0.93/N多量子阱结构中重组动力学和激子定位的影响。随着势垒中Si掺杂量的增加，PL峰位置出现蓝移(最高可达4.2/spl倍/10/sup 19/ cm/sup -3/)。对于更高的掺杂水平，可以观察到PL发射的红移。未掺杂样品的衰减时间表现为非指数行为，而Si掺杂样品的衰减时间表现为单指数行为。令人惊讶的是，在这些样品中，发现在所有掺杂水平下，2 K的PL衰减时间几乎是恒定的。

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Influence of Si-donor doping on the exciton localization in modulation-doped GaN/Al/sub 0.07/Ga/sub 0.93/N multiple quantum well

We have studied the effects of Si doping on the recombination dynamics and exciton localization in modulation-doped GaN/Al/sub 0.07/Ga/sub 0.93/N multiple-quantum-well structures by means of photoluminescence (PL) and time-resolved PL measurements. The PL peak position shows a blue shift as the Si doping in the barriers is increased (up to 4.2/spl times/10/sup 19/ cm/sup -3/). For even higher doping levels a red shift of the PL emission is observed. The decay time of an undoped sample shows nonexponential behavior, while the Si doped samples show mono-exponential behavior. Surprisingly, the PL decay time at 2 K is found to be nearly constant for all doping levels, in these samples.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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