High frequency performance of Sb-heterostructure millimeter-wave diodes

J. Schulman, S. Thomas, D. H. Chow, E. Croke, H. L. Dunlap, K. Holabird, W. M. Clark, Matt Morgan, Sander Weinreb
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引用次数: 4

Abstract

We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/GaSb nanostructure. It is ideal for square law radiometry and passive millimeter wave imaging. Excellent sensitivity has been demonstrated at present up to 110 GHz, with higher bandwidth predicted for smaller area diodes.
sb -异质结构毫米波二极管的高频性能
我们在InAs/AlSb/GaSb纳米结构中开发了一种基于量子隧道效应的零偏置毫米波二极管。它是平方定律辐射测量和被动毫米波成像的理想选择。优异的灵敏度目前已被证明高达110 GHz,更小面积的二极管预计具有更高的带宽。
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