Structural and optical properties of lateral composition modulation in (GaP)/sub n//(InP)/sub n/ short-period superlattice

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014487

J. Song, Jong Min Kim, Y. Ok, T. Seong, Y. T. Lee

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引用次数: 3

Abstract

The structural and optical properties of lateral composition modulation (LCM) in (InP)n/(GaP)n short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (T/sub g/) of 425 and 490/spl deg/C for n = 1, 1.7, and 2. LCM occurs only in a [1-10] direction at T/sub g/ = 490/spl deg/C for n = 1 and 2. On the contrary, LCM occurs both in [1-10] and [110] directions, parallel to [100] direction, at T/sub g/ /spl ges/ 425/spl deg/C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (/spl sim/-10% for n = 1.7) than in compressive strain (/spl sim/6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to /spl sim/345 meV as both n and T/sub g/ increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.

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(GaP)/sub n//(InP)/sub n/短周期超晶格中横向成分调制的结构和光学性质

采用透射电子显微镜(TEM)和光致发光(PL)研究了分子束外延生长(InP)n/(GaP)n短周期超晶格中横向成分调制(LCM)的结构和光学性质，生长温度(T/sub g/)分别为425和490/spl度/C, n = 1、1.7和2。当n = 1和2时，LCM仅发生在T/sub / = 490/spl°/C的[1-10]方向上。相反，当n = 1.7时，LCM在T/sub g/ /spl ges/ 425/spl°/C方向平行于[100]方向，在[1-10]和[110]方向均发生。这是由于LCM对拉伸应变(n = 1.7时/spl sim/-10%)的感应比对压缩应变(n = 1和2时/spl sim/6%)的感应更强。9 K-PL测量表明，随着n和T/sub g/的增加，LCM的带隙减小到/spl sim/345 meV。这是迄今为止报道的最好的数据。带隙收缩的成因主要是LCM和cupt型有序的贡献。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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