一种低阈值sb基边发射半导体激光器，发射频率为2.26 /spl mu/m

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014630

A. Perona, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, D. Yarekha, A. Garnache, A. Baranov, C. Alibert

{"title":"一种低阈值sb基边发射半导体激光器，发射频率为2.26 /spl mu/m","authors":"A. Perona, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, D. Yarekha, A. Garnache, A. Baranov, C. Alibert","doi":"10.1109/ICIPRM.2002.1014630","DOIUrl":null,"url":null,"abstract":"We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm/sup -1/ have been found. The system is able to reach threshold current densities as low as 63 A/cm/sup 2/ per well for a cavity length of 1200 /spl mu/m. This is, to our knowledge, the best reported value at 2.26 /spl mu/m.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 /spl mu/m\",\"authors\":\"A. Perona, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, D. Yarekha, A. Garnache, A. Baranov, C. Alibert\",\"doi\":\"10.1109/ICIPRM.2002.1014630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm/sup -1/ have been found. The system is able to reach threshold current densities as low as 63 A/cm/sup 2/ per well for a cavity length of 1200 /spl mu/m. This is, to our knowledge, the best reported value at 2.26 /spl mu/m.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们利用分子束外延(MBE)在[100]取向的GaSb:Te衬底上生长半导体激光器。通过测量外量子效率与空腔长度的关系，推导出80%的内量子效率。已发现内部损耗低至7厘米/sup -1/ sup。该系统的阈值电流密度低至每口井63 A/cm/sup 2/，空腔长度为1200 /spl mu/m。据我们所知，这是2.26 /spl mu/m的最佳报告值。

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A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 /spl mu/m

We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm/sup -1/ have been found. The system is able to reach threshold current densities as low as 63 A/cm/sup 2/ per well for a cavity length of 1200 /spl mu/m. This is, to our knowledge, the best reported value at 2.26 /spl mu/m.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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