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A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 /spl mu/m

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014630
A. Perona, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, D. Yarekha, A. Garnache, A. Baranov, C. Alibert
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Abstract

We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm/sup -1/ have been found. The system is able to reach threshold current densities as low as 63 A/cm/sup 2/ per well for a cavity length of 1200 /spl mu/m. This is, to our knowledge, the best reported value at 2.26 /spl mu/m.
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一种低阈值sb基边发射半导体激光器，发射频率为2.26 /spl mu/m
我们利用分子束外延(MBE)在[100]取向的GaSb:Te衬底上生长半导体激光器。通过测量外量子效率与空腔长度的关系，推导出80%的内量子效率。已发现内部损耗低至7厘米/sup -1/ sup。该系统的阈值电流密度低至每口井63 A/cm/sup 2/，空腔长度为1200 /spl mu/m。据我们所知，这是2.26 /spl mu/m的最佳报告值。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
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