III-V型半导体纳米晶须中的异质界面

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014367

A. Persson, B. Ohlsson, M. Bjork, C. Thelander, M. Magnusson, K. Deppert, T. Sass, L. Wallenberg, L. Samuelson

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引用次数: 1

摘要

我们研究了在气液固生长的III-V纳米晶须中形成的异质结构。化学束外延的典型生长条件有利于原子突变界面的形成。本文研究了异质结构界面的性质，包括v列材料(As, P)或iii列材料(In, Ga)的开关。

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Heterointerfaces in III-V semiconductor nanowhiskers

We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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