High-quality 1.3 /spl mu/m AlGaInAs MQW by narrow-stripe selective metalorganic vapor-phased epitaxy and its application in buried heterostructure laser diodes

Abstract

High-quality 1.3 /spl mu/m AlGaInAs MQW by narrow-stripe selective MOVPE has been investigated and then applied to an AlGaInAs BH laser diode by using an Al-oxidation-free process. A low threshold current of 9.0 mA and a relaxation frequency of more than 10 GHz were obtained at 85/spl deg/C.