垂直梯度冻结法生长InP和GaAs衬底晶体

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014455

I. Grant, U. Sahr

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引用次数: 1

摘要

VGF晶体生长作为GaAs和InP的制造方法正迅速获得发展。它在砷化镓中的地位已经确立，随着微波电子外延加工的增加，它的重要性有望进一步增长。到目前为止，InP的应用还不太广泛，单晶产量面临更大的挑战。大衬底直径的总体趋势为利用该技术提供的较低晶体缺陷密度提供了进一步的机会。

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Growth of InP and GaAs substrate crystals by the vertical gradient freeze method

VGF crystal growth is rapidly gaining ground as a manufacturing method for both GaAs and InP. Its position in GaAs is well established and it is expected to grow further in importance with increased uptake of epitaxial processing for microwave electronics. Utilisation in InP is, so far, less widespread, with greater challenges in single crystal yield. The general trend towards larger substrate diameters provides further opportunities to take advantage of the lower crystal defect density offered by the technique.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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