沟槽型InGaAs/InAlAs量子线场效应管的负跨导性

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014495

K. Jang, T. Sugaya, H. Hahn, A. Shinoda, K. Yonei, M. Ogura, K. Komori

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引用次数: 1

摘要

采用分子束外延(MBE)技术在(311)a v型InP衬底上生长沟槽型量子线(QWR)，制备了InGaAs/InAlAs (25/sup w//spl倍/10/sup t/ nm)场效应晶体管(FET)，观察了负差分电阻(NDR)和负跨导效应。在相对较高的24k温度下，可以清晰地观察到量子化的电导波动，这表明我们的新型沟槽型外延生长方法实现了高质量的量子水阱。量子化的电导结果可以用量子水阱一维态与二维态之间的能量亚能级相关共振隧穿现象来解释。特别是在6 K时，观察到负跨导特性。

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Negative transconductance in trench-type InGaAs/InAlAs quantum wire FET

The effects of negative differential resistance (NDR) and negative transconductance are observed in an InGaAs/InAlAs (25/sup w//spl times/10/sup t/ nm) quantum wire (QWR)-field effect transistor (FET) that is fabricated with a trench-type QWR grown on a (311)A V-groove patterned InP substrate by molecular beam epitaxy (MBE). The quantized conductance fluctuations are clearly observed at the relatively high temperature of 24 K, which indicates a high quality QWR is realized by our novel trench type epitaxial growth method. The quantized conductance result can be explained by the energy sub-level related resonant tunneling like phenomenon between one-dimensional states of the QWR and the two-dimensional states of the reservoir. Especially, the negative transconductance characteristics are observed at 6 K.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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