窄带选择性金属有机气相外延制备高品质1.3 /spl μ m AlGaInAs MQW及其在埋藏异质结构激光二极管中的应用

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014089

T. Nakamura, Y. Ohsawa, T. Okuda, K. Tsuruoka, K. Kurihara, T. Terakado, T. Koui, K. Kobayashi

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引用次数: 3

摘要

采用窄条纹选择性MOVPE制备了高质量的1.3 /spl mu/m AlGaInAs MQW，并采用无al氧化工艺将其应用于AlGaInAs BH激光二极管。在85/spl度/C下获得了9.0 mA的低阈值电流和大于10 GHz的弛豫频率。

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High-quality 1.3 /spl mu/m AlGaInAs MQW by narrow-stripe selective metalorganic vapor-phased epitaxy and its application in buried heterostructure laser diodes

High-quality 1.3 /spl mu/m AlGaInAs MQW by narrow-stripe selective MOVPE has been investigated and then applied to an AlGaInAs BH laser diode by using an Al-oxidation-free process. A low threshold current of 9.0 mA and a relaxation frequency of more than 10 GHz were obtained at 85/spl deg/C.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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