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Low contact resistance metallization for gigabit scale DRAMs using fully-dry cleaning by Ar/H/sub 2/ ECR plasma 采用Ar/H/sub - 2/ ECR等离子体全干式清洗技术实现千兆dram的低接触电阻金属化
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499314
T. Taguwa, K. Urabe, M. Sekine, Y. Yamada, T. Kikkawa
{"title":"Low contact resistance metallization for gigabit scale DRAMs using fully-dry cleaning by Ar/H/sub 2/ ECR plasma","authors":"T. Taguwa, K. Urabe, M. Sekine, Y. Yamada, T. Kikkawa","doi":"10.1109/IEDM.1995.499314","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499314","url":null,"abstract":"This paper describes a fully-dry cleaning technique with Ar/H/sub 2/ Electron Cyclotron Resonance (ECR) plasma as a low contact resistance metallization technology for gigabit scale DRAM contacts. Extremely low contact resistances of 296 /spl Omega/ and 350 /spl Omega/ for 0.3 /spl mu/m contact diameter with aspect ratio of 7 were realized on n+ and p+ diffusion layers, respectively. No leakage current was observed. By using this technology, a DRAM ULSI, which was planarized by Chemical Mechanical Polishing (CMP) and had deep contact holes with aspect ratio of 6, was successfully fabricated.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122690042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits 高级SiGe hbt中性点基极重组及其对精密模拟电路温度特性的影响
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499328
A. Joseph, J. Cressler, R. Jaeger, D. M. Richey, D. Harame
{"title":"Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits","authors":"A. Joseph, J. Cressler, R. Jaeger, D. M. Richey, D. Harame","doi":"10.1109/IEDM.1995.499328","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499328","url":null,"abstract":"We present the first comprehensive investigation of neutral base recombination (NBR) in advanced UHV/CVD SiGe HBTs, and quantitatively assess its impact on the temperature characteristics of precision analog circuits. We show that a direct consequence of NBR in SiGe HBT's is the degradation of Early voltage (V/sub A/) when transistors are operated with constant current input (forced-I/sub B/). We quantitatively address the impact of NBR on precision SiGe analog circuits by incorporating the effect into a new version of SPICE, calibrating the SPICE models to data, and simulating different types of precision current sources across the temperature range of -55/spl deg/C to 85/spl deg/C.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131392472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process 一种在标准CMOS工艺中使用横向双极光电晶体管的指纹光探测器
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497207
R. W. Sandage, J. Connelly
{"title":"A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process","authors":"R. W. Sandage, J. Connelly","doi":"10.1109/IEDM.1995.497207","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497207","url":null,"abstract":"An integrated photodetector array has been fabricated using lateral bipolar phototransistors. These transistors are ten times as responsive (/spl lambda/=660 nm) as identically sized vertical bipolar phototransistors and arrays of this transistor consume less power than charge-coupled device arrays of the same size. The image processing for this array is accomplished through the use of a current mode comparator.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115157844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
The development of high frequency, megawatt gyrotrons for ITER 为ITER开发高频、兆瓦级回旋加速器
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499182
K. Kreischer, B. Danly, J. Hogge, T. Kimura, R. Temkin, M. Read
{"title":"The development of high frequency, megawatt gyrotrons for ITER","authors":"K. Kreischer, B. Danly, J. Hogge, T. Kimura, R. Temkin, M. Read","doi":"10.1109/IEDM.1995.499182","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499182","url":null,"abstract":"The present focus of the MIT program is to demonstrate that efficient operation can be achieved with a gyrotron oscillator at power levels in excess of 1 MW and frequencies between 140 and 200 GHz. These are the operating parameters required for the International Thermonuclear Experimental Reactor (ITER) for plasma initiation, bulk heating, and current drive. Two major experiments are being conducted at MIT as part of this program: A 170 GHz, 1 MW gyrotron operating in the TE/sub 28,8,1/ mode using a conventional, tapered cavity, and a coaxial 140 GHz, 3 MW gyrotron oscillating in the TE/sub 21,13,1/ mode. This paper reviews design issues that were investigated during the construction of these experiments, and also presents results from initial operation of the coaxial gyrotron.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127925999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth 采用全干蚀刻和选择性MOMBE生长制备了f/sub T/=121 GHz的0.1-/spl mu/m p/sup +/- gaas栅极hjfet
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497213
S. Wada, N. Furuhata, M. Tokushima, M. Fukaishi, H. Hida, T. Maeda
{"title":"0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth","authors":"S. Wada, N. Furuhata, M. Tokushima, M. Fukaishi, H. Hida, T. Maeda","doi":"10.1109/IEDM.1995.497213","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497213","url":null,"abstract":"This paper reports the first successful fabrication of a high-performance, 0.1-/spl mu/m, T-shaped, p/sup +/-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p/sup +/-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-/spl mu/m, p/sup +/-gate n-Al/sub 0.2/Ga/sub 0.8/As-In/sub 0.25/Ga/sub 0.75/As HJFET exhibits excellent microwave performance, f/sub T/=121 GHz and f/sub max/=144 GHz.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133905715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Scaling-down of cone-like field emitter using LOCOS 利用LOCOS缩小锥形场发射极
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499224
Chun‐Gyoo Lee, Ho Young Ahn, J. Lee
{"title":"Scaling-down of cone-like field emitter using LOCOS","authors":"Chun‐Gyoo Lee, Ho Young Ahn, J. Lee","doi":"10.1109/IEDM.1995.499224","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499224","url":null,"abstract":"As an attempt to develop a field emitter array (FEA) with sub-half-micron gate openings for low voltage operation, a new fabrication method has been proposed and demonstrated. The key element of the new process is forming the gate insulator by local oxidation of silicon (LOCOS), resulting in the reduction of the gate hole size due to the lateral encroachment of oxide, ultimately, comparable with the nitride disc size formed by a conventional contact printer. Feasibility of scaling down the gate hole size of a field emitter to sub-half-micron has been proven successfully. For a 2500-tip array with 450-nm-diameter gate openings, the anode current of 115 /spl mu/A (/spl sim/50 nA/tip) was measured at the gate voltage of 41 V, while the gate current was less than 0.3% of the anode current. Simulation results, which were compared with the measured emission characteristics, indicate that the lowered operating voltage of the scaled field emitter is caused by field enhancement not only due to the reduction of gate hole size but also due to that of the tip radius.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133981778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SiGe HBT technology: device and application issues SiGe HBT技术:设备和应用问题
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499322
D. Harame, L. Larson, M. Case, S. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-ngoc, K. Stein, J. Cressler, S. Jeng, J. Malinowski, R. Groves, E. Eld, D. Sunderland, D. Rensch, M. Gilbert, K. Schonenberg, D. Ahlgren, S. Rosenbaum, J. Glenn, B. Meyerson
{"title":"SiGe HBT technology: device and application issues","authors":"D. Harame, L. Larson, M. Case, S. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-ngoc, K. Stein, J. Cressler, S. Jeng, J. Malinowski, R. Groves, E. Eld, D. Sunderland, D. Rensch, M. Gilbert, K. Schonenberg, D. Ahlgren, S. Rosenbaum, J. Glenn, B. Meyerson","doi":"10.1109/IEDM.1995.499322","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499322","url":null,"abstract":"SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of III-V HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. This paper will review the status of IBM's SiGe HBT technology particularly focusing on some key device and application issues for high frequency circuit applications. In this work we review graded-base SiGe HBTs optimized for analog circuits and address four key issues: 1) BV/sub ceo/ constraints, 2) Transmission line loss, 3) Noise performance, and 4) Process integration leverage and issues. All of the hardware results are for self-aligned, polysilicon emitter, graded-base SiGe HBTs fabricated in a 200 mm semiconductor production line using the UHV/CVD technique for film growth.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131877373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs 千兆元dram用Ta/sub 2/O/sub 5/电容器的介电材料
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497194
Y. Ohji, Y. Matsui, T. Itoga, M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano, S. Iijima, Y. Kawamoto
{"title":"Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs","authors":"Y. Ohji, Y. Matsui, T. Itoga, M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano, S. Iijima, Y. Kawamoto","doi":"10.1109/IEDM.1995.497194","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497194","url":null,"abstract":"We fabricated 256-Mbit DRAM cells using a 0.5 /spl mu/m high CROWN capacitor with crystallized Ta/sub 2/O/sub 5/ dielectric film. We confirmed that the crystallized Ta/sub 2/O/sub 5/ (3.3 nm of SiO/sub 2/-equivalent thickness) was very stable in the conventional metallization process. The key issues for manufacturing were to eliminate the hydrocarbon contaminants during high temperature O/sub 2/ annealing. Our preliminary investigation of Ta/sub 2/O/sub 5/ metal-insulator-metal (MIM) capacitors suggested that it is possible to fabricate 1-Gbit DRAM cells using the amorphous Ta/sub 2/O/sub 5/ MIM capacitor with a CROWN structure.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131938342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Comparison of experimental and theoretical results of room temperature operated single electron transistor made by STM/AFM nano-oxidation process STM/AFM纳米氧化法制备室温单电子晶体管的理论与实验结果比较
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499215
K. Matsumoto, M. Ishii, J. Shirakashi, K. Segawa, Y. Oka, B.J. Vartanian, J. S. Harris
{"title":"Comparison of experimental and theoretical results of room temperature operated single electron transistor made by STM/AFM nano-oxidation process","authors":"K. Matsumoto, M. Ishii, J. Shirakashi, K. Segawa, Y. Oka, B.J. Vartanian, J. S. Harris","doi":"10.1109/IEDM.1995.499215","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499215","url":null,"abstract":"The experimental results of the single electron transistor (SET) operated at room temperature, which was fabricated by a scanning tunneling microscope (STM)/an atomic force microscope (AFM) nano-oxidation process, was compared with the results of calculated values, and a good coincidence between them was obtained. This coincidence confirms the existence of the Coulomb blockade phenomena in our SET even at room temperature.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133863157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electroluminescent devices using polymer blend thin films 使用聚合物混合薄膜的电致发光器件
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499343
C. Wu, J. Sturm, J. Tian, M. E. Thompson, R. Register
{"title":"Electroluminescent devices using polymer blend thin films","authors":"C. Wu, J. Sturm, J. Tian, M. E. Thompson, R. Register","doi":"10.1109/IEDM.1995.499343","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499343","url":null,"abstract":"We report the thin film electroluminescent devices made from polymer blends composed of the luminescent conjugated polymer poly(3-n-butyl-p-pyridyl vinylene) (Bu-PPyV), a hole-transporting polymer poly(9-vinyl carbazole) (PVK), and an electron-transporting material 2-(4-biphenyl)-5-(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD). Through the blends, we show that the self-quenching of the luminescence of the luminescent polymer is reduced and the luminescent efficiency is much increased. Carrier transport materials provide better match of hole and electron injection into the blends and therefore raise the electroluminescent efficiency by over one order of magnitude higher than the pure material. By tuning the composition of the blends, the emission color can be changed across the whole visible spectrum.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114609643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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