S. Wada, N. Furuhata, M. Tokushima, M. Fukaishi, H. Hida, T. Maeda
{"title":"采用全干蚀刻和选择性MOMBE生长制备了f/sub T/=121 GHz的0.1-/spl mu/m p/sup +/- gaas栅极hjfet","authors":"S. Wada, N. Furuhata, M. Tokushima, M. Fukaishi, H. Hida, T. Maeda","doi":"10.1109/IEDM.1995.497213","DOIUrl":null,"url":null,"abstract":"This paper reports the first successful fabrication of a high-performance, 0.1-/spl mu/m, T-shaped, p/sup +/-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p/sup +/-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-/spl mu/m, p/sup +/-gate n-Al/sub 0.2/Ga/sub 0.8/As-In/sub 0.25/Ga/sub 0.75/As HJFET exhibits excellent microwave performance, f/sub T/=121 GHz and f/sub max/=144 GHz.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth\",\"authors\":\"S. Wada, N. Furuhata, M. Tokushima, M. Fukaishi, H. Hida, T. Maeda\",\"doi\":\"10.1109/IEDM.1995.497213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the first successful fabrication of a high-performance, 0.1-/spl mu/m, T-shaped, p/sup +/-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p/sup +/-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-/spl mu/m, p/sup +/-gate n-Al/sub 0.2/Ga/sub 0.8/As-In/sub 0.25/Ga/sub 0.75/As HJFET exhibits excellent microwave performance, f/sub T/=121 GHz and f/sub max/=144 GHz.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.497213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.497213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth
This paper reports the first successful fabrication of a high-performance, 0.1-/spl mu/m, T-shaped, p/sup +/-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p/sup +/-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-/spl mu/m, p/sup +/-gate n-Al/sub 0.2/Ga/sub 0.8/As-In/sub 0.25/Ga/sub 0.75/As HJFET exhibits excellent microwave performance, f/sub T/=121 GHz and f/sub max/=144 GHz.
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