D. Harame, L. Larson, M. Case, S. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-ngoc, K. Stein, J. Cressler, S. Jeng, J. Malinowski, R. Groves, E. Eld, D. Sunderland, D. Rensch, M. Gilbert, K. Schonenberg, D. Ahlgren, S. Rosenbaum, J. Glenn, B. Meyerson
{"title":"SiGe HBT technology: device and application issues","authors":"D. Harame, L. Larson, M. Case, S. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-ngoc, K. Stein, J. Cressler, S. Jeng, J. Malinowski, R. Groves, E. Eld, D. Sunderland, D. Rensch, M. Gilbert, K. Schonenberg, D. Ahlgren, S. Rosenbaum, J. Glenn, B. Meyerson","doi":"10.1109/IEDM.1995.499322","DOIUrl":null,"url":null,"abstract":"SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of III-V HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. This paper will review the status of IBM's SiGe HBT technology particularly focusing on some key device and application issues for high frequency circuit applications. In this work we review graded-base SiGe HBTs optimized for analog circuits and address four key issues: 1) BV/sub ceo/ constraints, 2) Transmission line loss, 3) Noise performance, and 4) Process integration leverage and issues. All of the hardware results are for self-aligned, polysilicon emitter, graded-base SiGe HBTs fabricated in a 200 mm semiconductor production line using the UHV/CVD technique for film growth.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"52","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499322","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 52
Abstract
SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of III-V HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. This paper will review the status of IBM's SiGe HBT technology particularly focusing on some key device and application issues for high frequency circuit applications. In this work we review graded-base SiGe HBTs optimized for analog circuits and address four key issues: 1) BV/sub ceo/ constraints, 2) Transmission line loss, 3) Noise performance, and 4) Process integration leverage and issues. All of the hardware results are for self-aligned, polysilicon emitter, graded-base SiGe HBTs fabricated in a 200 mm semiconductor production line using the UHV/CVD technique for film growth.
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