一种在标准CMOS工艺中使用横向双极光电晶体管的指纹光探测器

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.497207

R. W. Sandage, J. Connelly

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引用次数: 33

摘要

利用横向双极光电晶体管制作了一种集成光电探测器阵列。这些晶体管的响应速度(/spl λ /=660 nm)是相同尺寸的垂直双极光电晶体管的10倍，并且这种晶体管的阵列比相同尺寸的电荷耦合器件阵列消耗更少的功率。该阵列的图像处理是通过使用当前模式比较器来完成的。

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A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process

An integrated photodetector array has been fabricated using lateral bipolar phototransistors. These transistors are ten times as responsive (/spl lambda/=660 nm) as identically sized vertical bipolar phototransistors and arrays of this transistor consume less power than charge-coupled device arrays of the same size. The image processing for this array is accomplished through the use of a current mode comparator.

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Proceedings of International Electron Devices Meeting

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