STM/AFM纳米氧化法制备室温单电子晶体管的理论与实验结果比较

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499215

K. Matsumoto, M. Ishii, J. Shirakashi, K. Segawa, Y. Oka, B.J. Vartanian, J. S. Harris

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引用次数: 6

摘要

将扫描隧道显微镜(STM)/原子力显微镜(AFM)纳米氧化工艺制备的单电子晶体管(SET)在室温下的实验结果与计算值进行了比较，得到了较好的符合性。这一巧合证实了即使在室温下，我们的SET中也存在库仑阻塞现象。

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Comparison of experimental and theoretical results of room temperature operated single electron transistor made by STM/AFM nano-oxidation process

The experimental results of the single electron transistor (SET) operated at room temperature, which was fabricated by a scanning tunneling microscope (STM)/an atomic force microscope (AFM) nano-oxidation process, was compared with the results of calculated values, and a good coincidence between them was obtained. This coincidence confirms the existence of the Coulomb blockade phenomena in our SET even at room temperature.

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Proceedings of International Electron Devices Meeting

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