A. Joseph, J. Cressler, R. Jaeger, D. M. Richey, D. Harame
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引用次数: 10
摘要
本文首次全面研究了中性点基极复合(NBR)在先进的UHV/CVD SiGe hbt中的应用，并定量评估了其对精密模拟电路温度特性的影响。我们表明，在SiGe HBT中，NBR的直接后果是当晶体管在恒流输入(强制i /sub B/)下工作时，早期电压(V/sub a /)的退化。我们通过将NBR对精密SiGe模拟电路的影响纳入新版本的SPICE，将SPICE模型校准为数据，并在-55/spl°C至85/spl°C的温度范围内模拟不同类型的精密电流源，定量地解决了NBR对精密SiGe模拟电路的影响。
Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits
We present the first comprehensive investigation of neutral base recombination (NBR) in advanced UHV/CVD SiGe HBTs, and quantitatively assess its impact on the temperature characteristics of precision analog circuits. We show that a direct consequence of NBR in SiGe HBT's is the degradation of Early voltage (V/sub A/) when transistors are operated with constant current input (forced-I/sub B/). We quantitatively address the impact of NBR on precision SiGe analog circuits by incorporating the effect into a new version of SPICE, calibrating the SPICE models to data, and simulating different types of precision current sources across the temperature range of -55/spl deg/C to 85/spl deg/C.
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