T. Taguwa, K. Urabe, M. Sekine, Y. Yamada, T. Kikkawa
{"title":"采用Ar/H/sub - 2/ ECR等离子体全干式清洗技术实现千兆dram的低接触电阻金属化","authors":"T. Taguwa, K. Urabe, M. Sekine, Y. Yamada, T. Kikkawa","doi":"10.1109/IEDM.1995.499314","DOIUrl":null,"url":null,"abstract":"This paper describes a fully-dry cleaning technique with Ar/H/sub 2/ Electron Cyclotron Resonance (ECR) plasma as a low contact resistance metallization technology for gigabit scale DRAM contacts. Extremely low contact resistances of 296 /spl Omega/ and 350 /spl Omega/ for 0.3 /spl mu/m contact diameter with aspect ratio of 7 were realized on n+ and p+ diffusion layers, respectively. No leakage current was observed. By using this technology, a DRAM ULSI, which was planarized by Chemical Mechanical Polishing (CMP) and had deep contact holes with aspect ratio of 6, was successfully fabricated.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"173 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low contact resistance metallization for gigabit scale DRAMs using fully-dry cleaning by Ar/H/sub 2/ ECR plasma\",\"authors\":\"T. Taguwa, K. Urabe, M. Sekine, Y. Yamada, T. Kikkawa\",\"doi\":\"10.1109/IEDM.1995.499314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a fully-dry cleaning technique with Ar/H/sub 2/ Electron Cyclotron Resonance (ECR) plasma as a low contact resistance metallization technology for gigabit scale DRAM contacts. Extremely low contact resistances of 296 /spl Omega/ and 350 /spl Omega/ for 0.3 /spl mu/m contact diameter with aspect ratio of 7 were realized on n+ and p+ diffusion layers, respectively. No leakage current was observed. By using this technology, a DRAM ULSI, which was planarized by Chemical Mechanical Polishing (CMP) and had deep contact holes with aspect ratio of 6, was successfully fabricated.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"173 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low contact resistance metallization for gigabit scale DRAMs using fully-dry cleaning by Ar/H/sub 2/ ECR plasma
This paper describes a fully-dry cleaning technique with Ar/H/sub 2/ Electron Cyclotron Resonance (ECR) plasma as a low contact resistance metallization technology for gigabit scale DRAM contacts. Extremely low contact resistances of 296 /spl Omega/ and 350 /spl Omega/ for 0.3 /spl mu/m contact diameter with aspect ratio of 7 were realized on n+ and p+ diffusion layers, respectively. No leakage current was observed. By using this technology, a DRAM ULSI, which was planarized by Chemical Mechanical Polishing (CMP) and had deep contact holes with aspect ratio of 6, was successfully fabricated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
