千兆元dram用Ta/sub 2/O/sub 5/电容器的介电材料

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.497194

Y. Ohji, Y. Matsui, T. Itoga, M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano, S. Iijima, Y. Kawamoto

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引用次数: 7

摘要

我们使用0.5 /spl mu/m高的CROWN电容器和结晶化的Ta/sub 2/O/sub 5/介电膜制备了256 mbit的DRAM电池。结果表明，在常规金属化过程中，Ta/sub 2/O/sub 5/ (SiO/sub 2/-当量厚度3.3 nm)的结晶非常稳定。制造的关键问题是在高温O/sub /退火过程中消除烃类污染物。我们对Ta/sub 2/O/sub 5/金属-绝缘体-金属(MIM)电容器的初步研究表明，使用具有CROWN结构的非晶Ta/sub 2/O/sub 5/ MIM电容器可以制造1 gbit DRAM电池。

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Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs

We fabricated 256-Mbit DRAM cells using a 0.5 /spl mu/m high CROWN capacitor with crystallized Ta/sub 2/O/sub 5/ dielectric film. We confirmed that the crystallized Ta/sub 2/O/sub 5/ (3.3 nm of SiO/sub 2/-equivalent thickness) was very stable in the conventional metallization process. The key issues for manufacturing were to eliminate the hydrocarbon contaminants during high temperature O/sub 2/ annealing. Our preliminary investigation of Ta/sub 2/O/sub 5/ metal-insulator-metal (MIM) capacitors suggested that it is possible to fabricate 1-Gbit DRAM cells using the amorphous Ta/sub 2/O/sub 5/ MIM capacitor with a CROWN structure.

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Proceedings of International Electron Devices Meeting

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