Zong-Zheng Du, Guo-Zheng Zhang, Yu-Ting Yang, Xing-Ye Tong, Hong Liu
{"title":"Effect of CeO2 on electrical properties, mechanical and thermal performance of 0.76Bi1/2Na1/2TiO3–0.24SrTiO3 lead-free piezoelectric ceramics","authors":"Zong-Zheng Du, Guo-Zheng Zhang, Yu-Ting Yang, Xing-Ye Tong, Hong Liu","doi":"10.1007/s10854-025-14597-2","DOIUrl":"10.1007/s10854-025-14597-2","url":null,"abstract":"<div><p>Thermal and mechanical properties are important parameters for high-precision piezoelectric actuators. In this work, 0.76Bi<sub>1/2</sub>Na<sub>1/2</sub>TiO<sub>3</sub>–0.24SrTiO<sub>3</sub>-<i>x</i>wt% CeO<sub>2</sub> (abbreviated as BNST24-<i>x</i>Ce) lead-free ceramics are found to have a large electrostrain of 0.176%, and a normalized strain (<i>S</i><sub>max</sub>/<i>E</i><sub>max</sub>) of 880 pm/V under an ultra-low driving field of 2 kV/mm. The BNST24-0.05Ce lead-free ceramics showed the representative parameters of Young’s modulus <i>E</i> ~ 142.1 GPa, Vickers indentation hardness <i>H</i><sub><i>v</i></sub> ~ 4.25 GPa, fracture toughness <i>K</i><sub>IC</sub> ~ 1.36 MPa·m<sup>1/2</sup>, thermal conductivity <i>λ</i> ~ 1.392 W m<sup>−1</sup> k<sup>−1</sup>, and coefficient of thermal expansion values <i>CTE</i> ~ 9.20 × 10<sup>−6</sup> K<sup>−1</sup>. These results indicate that these lead-free BNT-ST-based ceramics have excellent strain, thermal, and mechanical properties that meet the requirements for practical applications as piezoelectric actuators.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evolution of crystalline phases in glass matrix and their effect on optical and photoluminescent properties of silicate glasses derived from agro-food wastes","authors":"Shivani Punj, Navneet Kaur Mattu, Kulvir Singh","doi":"10.1007/s10854-025-14616-2","DOIUrl":"10.1007/s10854-025-14616-2","url":null,"abstract":"<div><p>The glass was synthesized using sustainable agro-food waste such as corn husk (CHA), sugar cane leaves ash (SCLA), and eggshell powder (ESP). Further, the glass is doped with 0.5 and 1 wt% of Dy<sub>2</sub>O<sub>3</sub> and heat treated at 800, 900, and 1000 °C to convert into glass ceramics. The heat-treated glass ceramics are characterized and tested by various techniques. The optical bandgap is decreased with crystalline phase formation. The photoluminescence studies reveal the strong emission peaks corresponding to Dy<sup>3</sup>⁺ transitions, the emission peaks at 483 nm (blue), 576 (yellow), 664, and 753 nm (red) corresponding to <sup>4</sup>F<sub>9/2</sub> → <sup>6</sup>H<sub>15/2</sub>, <sup>4</sup>F<sub>9/2</sub> → <sup>6</sup>H<sub>13/2</sub>, <sup>4</sup>F<sub>9/2</sub> → <sup>6</sup>H<sub>11/2</sub> and <sup>4</sup>F<sub>9/2</sub> → <sup>6</sup> H<sub>9/2</sub> transitions and CIE coordinates approaching white light coordinates with the increase in higher temperatures and at high Dy<sup>3+</sup> doping concentrations. The obtained results were compared with glass and crystalline counterparts of silicate-based glasses. The study highlights the potential of using agro-food waste-derived glass ceramics as host materials without hampering photoluminescence properties and can be used in energy-efficient solid-state lighting applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of stibnite thickness on the degradation of methylene blue in aqueous solutions under visible light","authors":"Adel Chihi","doi":"10.1007/s10854-025-14501-y","DOIUrl":"10.1007/s10854-025-14501-y","url":null,"abstract":"<div><p>In this work, we have investigated the physical, and photocatalytic properties of Sb<sub>2</sub>S<sub>3</sub> thin films deposited on glass substrates by a dip-coating method as a function of their film thickness. The photocatalytic degradation of methylene blue (MB) dye under dark and visible light conditions for 60 min was used for the photocatalytic activity of Sb<sub>2</sub>S<sub>3</sub> thin films. The champion photodegradation rate of 98.5% for MB under visible light conditions was obtained with a film thickness of 1200 nm. The surface morphology of stibnite films was studied by field emission scanning electron microscope (FESEM), demonstrating that the grain size increased as the film thickness increased. X-ray diffraction (XRD) analysis revealed the formation of a polycrystalline orthorhombic structure with a clear preferred orientation along the (221) plane. The formation of a single phase of stibnite thin films was corroborated by measuring Raman spectra, unveiling five major Raman peaks. The estimated optical band gap value decreases from 1.72 to 1.67 eV as the film thickness rises from 300 to 1500 nm, indicating the possibility of band gap tuning by changing the Sb<sub>2</sub>S<sub>3</sub> film thickness. Electrochemical impedance spectroscopy (EIS) analysis has demonstrated the outstanding charge transfer properties of the stibnite thin films in the sample with a thickness of 1200 nm. These outcomes highlight the potential of film thickness for advanced photocatalytic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14501-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wael. H. Alsaedi, Ateyatallah Aljuhani, M. Alahmadi, Hamza A. Qasem, Belal H. M. Hussein, Majed O. Alawad, Muna S. Khushaim, Ahmed M. Abu-Dief
{"title":"Correction: Fabrication of a novel ZnO/Lu2O3 nanomaterial for the photocatalytic disposal of methylene blue dye under solar cell illumination","authors":"Wael. H. Alsaedi, Ateyatallah Aljuhani, M. Alahmadi, Hamza A. Qasem, Belal H. M. Hussein, Majed O. Alawad, Muna S. Khushaim, Ahmed M. Abu-Dief","doi":"10.1007/s10854-025-14555-y","DOIUrl":"10.1007/s10854-025-14555-y","url":null,"abstract":"","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Suchitra Puthran, Ganesh Shridhar Hegde, A. N. Prabhu, Yen-Hui Chen, Y. K. Kuo, Vikash Mishra
{"title":"An insight into experimental and theoretical thermoelectric property of antimony and tellurium-doped Bi2Se3 single crystals","authors":"Suchitra Puthran, Ganesh Shridhar Hegde, A. N. Prabhu, Yen-Hui Chen, Y. K. Kuo, Vikash Mishra","doi":"10.1007/s10854-025-14609-1","DOIUrl":"10.1007/s10854-025-14609-1","url":null,"abstract":"<div><p>The thermoelectric properties of Bi<sub>2</sub>Se<sub>3</sub> single crystals were investigated with Sb and Te co-doping using a modified vertical Bridgman method, complemented by theoretical studies. X-ray diffraction confirmed the rhombohedral crystal structure with an R <span>(overline{3 })</span> m space group. High-resolution X-ray diffraction (HR-XRD) analysis revealed a high degree of periodicity, threefold symmetry, and c-axis growth through θ − 2θ scans. Hall effect and Seebeck coefficient measurements indicated n-type conductivity across all samples, with a carrier concentration of approximately 10<sup>25</sup> m<sup>−3</sup>. At 300 K, the electrical resistivity of the (Bi<sub>0.96</sub>Sb<sub>0.04</sub>)<sub>2</sub>Se<sub>2.7</sub>Te<sub>0.3</sub> crystal was reduced by a factor of ~ 8.0 compared to pristine BiSe<sub>3</sub>. Additionally, the power factor and figure of merit of the (Bi<sub>0.96</sub>Sb<sub>0.04</sub>)<sub>2</sub>Se<sub>2.7</sub>Te<sub>0.3</sub> compound improved by 3 times and 1.2 times, respectively. Theoretical studies using density functional theory (DFT) supported these experimental findings, showing that substituting Sb in Bi<sub>2</sub>Se<sub>3</sub> enhances its electrical properties.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14609-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication and characterization of flexible graphene films with kirigami-inspired structural configurations","authors":"Berkcan Zulfikar, Nihan Aydemir","doi":"10.1007/s10854-025-14603-7","DOIUrl":"10.1007/s10854-025-14603-7","url":null,"abstract":"<div><p>Herein, we represent a study where kirigami techniques were utilized to construct flexible or articulated structures of graphene films that resemble the way the muscles or body parts of worms or caterpillars move. Graphene was fabricated by laser-induced graphene (LIG) as it offers potential benefits in terms of scalability and manufacturing efficiency. The characterization of LIG was carried out by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) to analyze its chemical structure, composition, and defect properties. Mechanical tests were then conducted on various kirigami-inspired designs, including a novel design developed for this study to evaluate their mechanical and electrical performance. The design was then subjected to electrical performance evaluation in two different device configurations to determine the potential and applicability of these designs in stretchable electronic applications. Compared to other designs, the arrow-shaped novel kirigami pattern demonstrated excellent mechanical performance which implied that the unique biomimetic kirigami design could be suitable for device manufacturing. The design reached up to 100% elongation before break, which is the maximum value following the serpentine pattern. In addition, suggestions for improving performance were discussed, demonstrating the positive effects of various geometric improvements and coatings.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14603-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ternary doping enhances the moisture and electrochemical stability of Li5.5PS4.5Cl1.5 solid-state electrolyte","authors":"Chenglin Cai, Kongjun Zhu, Yu Rao, Zhihan Kong, Ziyun Li, Xiaorao Wu, Yuqing Yang, Miaomiao Huang, Heng Zhou, Kang Yan, Jing Wang, Feng Shi, Jun Guo","doi":"10.1007/s10854-025-14581-w","DOIUrl":"10.1007/s10854-025-14581-w","url":null,"abstract":"<div><p>Sulfide-based solid-state electrolytes (SSEs) have great potential for realizing high-energy all-solid-state lithium metal batteries. However, their application is seriously hindered by their moisture sensitivity and lithium incompatibility. Herein, various elements, including Si, O, and Br, were used for doping to modify the lithium argyrodite Li<sub>5.5</sub>PS<sub>4.5</sub>Cl<sub>1.5</sub> SSE. The Li<sub>5.55</sub>Si<sub>0.05</sub>P<sub>0.95</sub>S<sub>4.4</sub>Cl<sub>0.75</sub>Br<sub>0.75</sub>O<sub>0.1</sub> (LSiPSClBrO) SSE was synthesized via a mechanical milling and annealing method to improve its stability in humid air while retaining a high ionic conductivity of 7.5 mS cm<sup>−1</sup>. Lithium symmetric cells with the LSiPSClBrO electrolyte exhibited stable lithium plating/stripping over 1000 h at a current density of 0.1 mA cm<sup>−2</sup>, along with a high critical current density of 1.65 mA cm<sup>−2</sup>. The all-solid-state Li–In/NCM811 cells assembled with the LSiPSClBrO electrolyte also demonstrated excellent cycling stability and rate performance, with a specific capacity of 123.0 mAh g<sup>−1</sup> after 70 cycles at a rate of 0.2 C and 93.1 mAh g<sup>−1</sup> after 150 cycles at a rate of 1 C. This study highlights the potential of Si, O, and Br co-doping in improving the air stability of sulfide electrolytes while maintaining high ionic conductivity, providing insights and guidance for the design and synthesis of multielement-doped materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14581-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ambedkar K. Verma, Dev K. Mahato, Sujan Malik, Abhigyan Dutta
{"title":"Influence of Ti-substituted hole-doped La1.5Sr0.5CoMnO6 double perovskite on microstructure and electrical transport properties","authors":"Ambedkar K. Verma, Dev K. Mahato, Sujan Malik, Abhigyan Dutta","doi":"10.1007/s10854-025-14534-3","DOIUrl":"10.1007/s10854-025-14534-3","url":null,"abstract":"<div><p>In this paper, a new Ti-substituted at the Mn site of hole-doped double perovskite La<sub>1.5</sub>Sr<sub>0.5</sub>CoMn<sub>1-<i>x</i></sub>Ti<sub><i>x</i></sub>O<sub>6</sub> (<i>x</i> = 0.0, 0.5, and 1.0; LSCMT) prepared by solid-state reaction and the effect of Ti-substitution on its structural and electrical transport properties is presented. The structures of La<sub>1.5</sub>Sr<sub>0.5</sub>CoMnO<sub>6</sub> (LSCMO), La<sub>1.5</sub>Sr<sub>0.5</sub>CoMn<sub>0.5</sub>Ti<sub>0.5</sub>O6 (LSCMTO), and La<sub>1.5</sub>Sr<sub>0.5</sub>CoTiO<sub>6</sub> (LSCTO) ceramic oxides were analyzed using powder X-ray diffractometer (<i>PXRD</i>) and phases are confirmed by the Rietveld refinement method and Raman spectroscopy studies. The LSCMO and LSCMTO were refined as monoclinic symmetry (space group P2<sub>1</sub>/n), while in the case of the LSCTO sample the best fitting was obtained for the orthorhombic symmetry (space group Pbnm). The ceramic grains are distributed in the range from 0.2 to 2.2 μm size in scanning electron micrograph(SEM).The temperature (298 to 573 K) and frequency (1 kHz to 1 MHz) dependent dielectric behavior are studied to examine the electrical properties of these ceramic materials. We analyzed the frequency and temperature-dependent electrical data using the framework of conductivity and electric modulus formalisms. The electrical and transport activities in the material are investigated by analyzing the spectra of impedance, modulus, and ac conductivity at varying frequencies and temperatures. The relaxation feature of the material is illustrated through modulus spectroscopic techniques and hopping conduction mechanism is depicted through ac conductivity spectra. The present study examines the effects of Ti-cations with relatable radius at the B/B′ site of La<sub>1.5</sub>Sr<sub>0.5</sub>CoMn<sub>1-<i>x</i></sub>Ti<sub><i>x</i></sub>O<sub>6</sub> (0 ≤ <i>x</i> ≤ 1.0). The same values of activation energy implies the presence of the same relaxation mechanism in materials with the same charge carriers.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14534-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Zn-doped V2O5 cathode material for lithium-ion batteries operating in the voltage window of 1.5–4.0 V","authors":"Malika Berouaken, Chafiaa Yaddaden, Noureddine Gabouze, Saloua Merazga, Fatima Boudeffar, Abdelhak Cheriet, Lamia Talbi, Katia Chebout Ayouz, Maha Ayat, Amar Manseri","doi":"10.1007/s10854-025-14574-9","DOIUrl":"10.1007/s10854-025-14574-9","url":null,"abstract":"<div><p>In this work, Zn-doped vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>) cathode materials for lithium-ion batteries (LIBs) were prepared via a facile wet chemical solution process followed by post-calcination treatment. The zinc doping impact on the phase structure, surface morphology, chemical states, and specific surface area of the as-prepared powders was studied using X-ray diffraction (XRD), emission scanning electron microscopy (SEM), X-ray photoelectron spectra (XPS), and Brunauer–Emmet–Teller (BET). The electrochemical behavior of undoped (VZ0%) and Zn-doped V<sub>2</sub>O<sub>5</sub> with 1 wt% (VZ1%) as cathodes for LIBs was investigated by cyclic voltammetry (CV), galvanostatic charge–discharge, and electrochemical impedance spectroscopy (EIS) measurements. As a result, the VZ1% sample possesses better properties than the VZ0% and suitable for use as cathode material in LIBs. The VZ1% sample displayed a higher specific discharge capacity (210 mAh g<sup>−1</sup> at 0.25 C), excellent cycle stability with a specific capacitance retention of 63% after 50 cycles of the charge/discharge process, and low charge transfer reaction resistance (<i>R</i><sub>ct</sub> = 107 Ω). The considerably improved electrochemical performance of Zn-doped V<sub>2</sub>O<sub>5</sub> can be attributed to its porous structure, lowest crystallite size, cell volume expansion, highest specific surface area, enhanced electronic conductivity and lowest charge transfer resistance.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143698544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Chemometric optimization of the CdO superhydrophobic thin film coating process: design of experiments (DOE)-based mathematical modeling for roughness and wettability prediction of cadmium-based transparent conductive oxide surfaces","authors":"Razan Alhomsi, Ersin Yücel, Yasin Yücel","doi":"10.1007/s10854-025-14631-3","DOIUrl":"10.1007/s10854-025-14631-3","url":null,"abstract":"<div><p>This study developed mathematical prediction models to predict the RMS roughness value (Rq) and water contact angle (WCA) values of cadmium-based superhydrophobic transparent conductive oxide surfaces. An experimental design approach was used to optimise the process parameters in the SILAR deposition of CdO films. Validation experiments were carried out under selected random conditions to validate the developed mathematical models. The obtained mathematical models not only predicted the roughness and contact angle values with high accuracy but were also used to determine the optimum process parameters to obtain the most effective surface roughness and contact angle. The results indicated that the developed mathematical models can predict the Rq and WCA values of the synthesized transparent conductive oxide surfaces both under optimum conditions and under randomly selected conditions with relative error varying between 0.6 and 4.7%. The Rq and WCA of the most effective cadmium-based superhydrophobic transparent conductive oxide surface synthesised under optimum conditions were measured as to be 189.1 nm and 151.15°, respectively, and were estimated by the developed models to be 193.3 nm and 150.28°, respectively. The closeness of the experimental and predicted values obtained for both models demonstrated the reliability of the developed mathematical models.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14631-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143698548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}