Journal of Materials Science: Materials in Electronics最新文献

{"title":"The substantial durability enhancement and failure mechanism of ultra-thin silver transparent electrodes under surge current","authors":"Zongqiang Wang,&nbsp;Ping Fu,&nbsp;Jia Li,&nbsp;Jinhua Huang,&nbsp;Ruiqin Tan,&nbsp;Jian Liu,&nbsp;Weijie Song","doi":"10.1007/s10854-024-13905-6","DOIUrl":"10.1007/s10854-024-13905-6","url":null,"abstract":"<div><p>In various optoelectrical devices, the ability of electrodes to withstand surge currents has a significant impact on the lifespan of the device. Especially when considering the use of ultra-thin metal-based flexible electrodes, which have garnered interest in recent years, it is crucial to address the challenges related to the failure and stability of the silver layer under current conditions within the operating environment. Despite their pivotal importance, these issues often receive inadequate attention in practical applications. In this paper, we report a universal method for the growth of ultra-thin Ag metal films with different metal oxide dispersions (CdO, ZnO and SnO₂), emphasizing the evaluation of their stability under surge current. The findings indicated that the introduction of metal oxides significantly enhanced the growth conditions and surge stability of the ultra-thin Ag film. Among them, the Ag-CdO thin film exhibits an impressive average current withstand time of over 1000 min when subjected to a pulse current density of 0.83 MA cm⁻². The reasons behind the failure of ultra-thin Ag films under surge current conditions were also examined. These insights provide a robust foundation for realizing the full potential of ultra-thin metal-based flexible electrodes in microelectronic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrodeposited NiFe films for electronic applications: structure and magnetic properties","authors":"A. Kotelnikova,&nbsp;K. Kadyrzhanov,&nbsp;V. Fedkin,&nbsp;D. Shlimas,&nbsp;T. Zubar,&nbsp;Daryn Borgekov,&nbsp;Maxim Zdorovets,&nbsp;Alex Trukhanov","doi":"10.1007/s10854-024-13921-6","DOIUrl":"10.1007/s10854-024-13921-6","url":null,"abstract":"<div><p>Pulse and pulse-reverse current modes were used to electrodeposit Ni–Fe nanostructured films. Correlation between modes, chemical composition, structural features, and magnetic properties was observed. Iron content decrease was observed both with transition from pulse to pulse current electrodeposition mode (from 42.1 to 27.5 at.%) and with reverse pulse prolongation (from 27.5 to 17.4 at.%). It opens broad perspectives for control of the Fe/Ni ratio in wide region in permalloy films by the varying of the electrodeposition regimes. XRD data showed that Fe solid solution in Ni was formed in all the films. All samples were single phase. Pulse-reverse samples have rougher surface (<i>R</i>_<i>q</i> from 14.1 to 36.5 nm) with convex grains in comparison with pulse sample, which has smoother surface (<i>R</i>_<i>q</i> of 4.1 nm) and undistinguishable grains. Higher grain size uniformity with reverse pulse duration increase was observed. All the Ni–Fe films have a significant magnetic anisotropy observed from the hysteresis loops, measured in plane and out of plane. The easy magnetization axis is located in the plane of the film for all the samples. Coercive force H_c of the Ni–Fe films is ∼ 2–12 times greater during the sample in-plane investigations in comparison with sample out-of-plane investigations. This confirms possibility to obtain the highly anisotropy nanostructured film by varying the electrodeposition regimes. Such kind of films can be successfully applied for magnetic field sensors and for electromagnetic shields.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructural characterization, electrical, and optical study of V2O5-doped Cr2O3 films for photonic applications","authors":"Adel M. El Sayed,&nbsp;Faisal Katib Alanazi","doi":"10.1007/s10854-024-13869-7","DOIUrl":"10.1007/s10854-024-13869-7","url":null,"abstract":"<div><p>The performance and optoelectronic properties of the transition metal (TM) oxide thin films can be enhanced by doping with other materials. In this study, V₂O₅ nanoparticles (NPs) were prepared by sol–gel and then used to prepare V₂O₅-doped Cr₂O₃ thin films using the spin-coating technique. The microstructural, morphological characterization, I–V measurements, and optical properties of the films were investigated. The XRD, FE-SEM, EDAX, and FTIR measurements revealed the polycrystalline nature, granular morphology, reduction in particle size (from 43 ± 2.58 nm to 21 ± 1.25 nm), crystallinity deterioration, and the limited stretching vibrations of Cr–O and Cr–O–Cr upon inclusion of V₂O₅. The doping didn’t alter the rhomoboedric corundum structure of Cr₂O₃. The films exhibited linear I–V behavior and their resistance decreased with doping. The films are highly transparent (up to 88%), and their absorption was minimal in the visible region. A new figure of merit was in the range of 0.255–0.270. The refractive index has bell-shaped behavior with the wavelength and increased with increasing V₂O₅. Additionally, the optical band gap (<i>E</i>_g) of the films decreased from 3.0 to 2.5 eV. The influences of 0.5–5.0% V₂O₅ doping ratio on the grain size, dislocation density, microstrain, and charge carrier concentration were investigated. The finding of this study indicates that the optoelectronic features of V₂O₅-doped Cr₂O₃ films were improved and the films can be used for various optoelectronic and photonic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142737215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, electrical, and multiferroic investigations of MgBiFeTiO6 double perovskite for possible optoelectronic applications","authors":"Lutu Sahoo,&nbsp;Shubhashree Sahoo,&nbsp;Subhashree Mishra,&nbsp;Nimai C. Nayak,&nbsp;B. N. Parida,&nbsp;R. K. Parida","doi":"10.1007/s10854-024-13867-9","DOIUrl":"10.1007/s10854-024-13867-9","url":null,"abstract":"<div><p>Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 °C was utilized to develop the MgBiFeTiO₆ (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like A_m-1B_mO_3m, <i>m</i> = 5, while Rietveld analysis and tolerance factor (<i>τ</i> ~ 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (~ 0.614 μm) is greater as compared to mean crystallites (~ 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet–visible (UV–vis) absorbance spectra have a higher threshold wavelength (~ 630 nm) with a direct bandgap of ~ 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25–500 °C with a frequency sweeping 100–5 M Hz. The compound possesses an average ambient dielectric (~ 433) and low loss (~ 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142737212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of structural, morphological and spectral characteristics of double perovskite Sr2GdTaO6 phosphors doped with Eu3+, and co-doped Eu3+, B3+ having improved quantum efficiency","authors":"Mustafa İlhan,&nbsp;Lütfiye Feray Güleryüz","doi":"10.1007/s10854-024-13832-6","DOIUrl":"10.1007/s10854-024-13832-6","url":null,"abstract":"<div><p>The increasing boron effect significantly enhanced the luminescence and asymmetry of double perovskite phosphor. The structural, morphological and spectral characteristics of Sr₂Gd_1−<i>x</i>TaO₆:<i>x</i>Eu³⁺, (<i>x</i> = 0.5–20 mol%) and Sr₂Gd_1−<i>x</i>TaO₆:<i>x</i>Eu³⁺, <i>y</i>B³⁺ (<i>x</i> = 10 mol%, <i>y</i> = 0–100 mol%) phosphor series were examined in terms of Eu³⁺ increase and B³⁺ increase. In XRD results, Eu³⁺ doped Sr₂GdTaO₆ samples exhibited a single-phase up to 20 mol%, and slight impurity phase was formed at high concentration in Eu³⁺, B³⁺ co-doped Sr₂GdTaO₆ series. In SEM micrographs, there was no significant change in grain morphology of Eu³⁺ doped grains, whereas the flux effect of boron led to grain growth in Eu³⁺, B³⁺ co-doped samples. The optical band gap energy (<i>E</i>_g) varied in the range of 4.42–4.27 and 4.27–4.08 eV for Eu³⁺ doped and Eu³⁺, B³⁺ co-doped series, respectively. The maximum increases in emissions depending on Eu³⁺ and B³⁺ increase were 10 mol% for Sr₂GdTaO₆:Eu³⁺ and 50 mol% for Sr₂GdTaO₆:Eu³⁺, B³⁺, respectively. The increased B³⁺ concentration improved the electric dipole transition (⁵D₀ → ⁷F₂), and the asymmetry ratio increased from 0.35 to 2.65. Judd–Ofelt (JO) parameters were calculated from the emission spectrum, in which the <i>Ω</i>₂ and <i>Ω</i>₄ parameters for Sr₂GdTaO₆:Eu³⁺ phosphors are close values, and both parameters increased in Sr₂GdTaO₆:Eu³⁺, B³⁺. The quantum efficiency of Sr₂GdTaO₆:Eu³⁺ phosphors ranged between 49.82 and 93.08%, and the <i>ɳ</i>_<b>QE</b> values for Sr₂GdTaO₆:Eu³⁺, B³⁺ exceeded 100%.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142737216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact on the structural and photophysical properties of TiO2 films owing to Li implantation","authors":"Sulakshana Mondal,&nbsp;Amaresh Das,&nbsp;Durga Basak","doi":"10.1007/s10854-024-13926-1","DOIUrl":"10.1007/s10854-024-13926-1","url":null,"abstract":"<div><p>We investigated here the effect of defects on the structural and photophysical properties of TiO₂ films implanted with Li ions with fluences from 1 × 10¹⁴ to 1 × 10¹⁵ ions/cm². All the films showed tetragonal anatase structure but higher angle shift of the (101) peak of implanted films confirms Li doping in Ti site. This result is also supported by our X-Ray photoelectron spectroscopy study. The results also indicated that with an increase in Li ion fluence, formation of defects like oxygen vacancy and/or Ti³⁺ species increases in implanted samples. This is also supported by theoretical “stopping and range of ions in matter” (SRIM) simulations. The introduction of oxygen vacancy-Ti³⁺ defects act as recombination centers which gives rise to significant change in emission properties and decrease the photoresponse properties of the TiO₂ films after Li implantation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142737280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of holmium on structural and optical properties of sol–gel spin coating-derived cadmium oxide thin films","authors":"Seema Gupta,&nbsp;Rajesh Lalwani,&nbsp;Mukul Gupta","doi":"10.1007/s10854-024-13862-0","DOIUrl":"10.1007/s10854-024-13862-0","url":null,"abstract":"<div><p>In this work, the structural and optical characteristics of undoped and Ho-doped CdO thin films developed via the sol–gel spin coating method on a glass substrate are investigated for the first time. XRD spectra, UV–Vis spectroscopy, and photoluminescence spectra were used for analyzing the structural and spectroscopic characteristics of the films, respectively. X-ray diffraction spectra revealed the cubic structure and preferred orientation of the films, along with their polycrystalline nature. The scanning electron microscopy revealed the morphology of CdO thin films like granular and cauliflower structures. The composition of the present materials is shown in the EDX graph. Absorption spectra were used to estimate the optical band gap of CdO thin films. With a rise in Ho doping, the optical study revealed a considerable decrease in the optical bandgap energy and an increase in transmittance in the visible region. We also investigate and analyze the nonlinear optical constants. The photoluminescence spectra of CdO thin films revealed a green emission. The deposited thin films exhibited the maximum emission of white light, with color coordinates in the almost white light area.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly sensitive detection of vitamin P using a novel copper nanostructure-decorated polydopamine-modified carbon ceramic electrode","authors":"Tahereh Rohani,&nbsp;Amirkhosro Beheshti-Marnani,&nbsp;Morteza Salehi","doi":"10.1007/s10854-024-13810-y","DOIUrl":"10.1007/s10854-024-13810-y","url":null,"abstract":"<div><p>In the current study, a novel low-cost-modified carbon ceramic electrode was fabricated and applied for electrocatalytic oxidation of vitamin P (Rutin). At first, the prepared carbon ceramic electrode was modified by a thin layer of polydopamine through electropolymerization. After that, the polydopamine-modified electrode was decorated by copper nanostructures through electrodeposition. By applying a fixed potential of − 0.60 V in a solution containing CuSO₄ and K₂SO₄, copper nanostructures were formed on the surface of the polydopamine layer. The obtained sensor was characterized using X-ray diffraction energy-dispersive X-ray analysis scanning electron microscopy (SEM), and electrochemical techniques and was applied for the detection of vitamin P with high sensitivity. Using the fabricated sensor, a substantial decrease in the overvoltage of anodic oxidation of vitamin P was observed. The calibration plot was found linear over the concentration range of 0.08–50 µM of vitamin P, and the limit of detection was estimated 9.0 nM. The diffusion coefficient of vitamin P was calculated 7.1 × 10⁻⁵ cm² s⁻¹ using chronoamperometry. Finally, the fabricated sensor was used successfully for the detection of vitamin P in herbal and biological samples.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gold nanoparticles anchored amine-functionalized nickel metal–organic framework composite for efficient solar light-assisted degradation of rose bengal dye and Cr(VI) reduction","authors":"K. V. Kavya,&nbsp;Dhanaprabhu Pattappan,&nbsp;Raju Suresh Kumar,&nbsp;Sivalingam Ramesh,&nbsp;Kavitha Thangavelu,&nbsp;R. T. Rajendra Kumar,&nbsp;Yuvaraj Haldorai","doi":"10.1007/s10854-024-13897-3","DOIUrl":"10.1007/s10854-024-13897-3","url":null,"abstract":"<div><p>In this report, the photodegradation of rose bengal dye (RB) and reduction of Cr(VI) was performed under solar light using a composite composed of amine-functionalized nickel metal–organic framework (Ni-MOF) and gold (Au). The morphological study revealed that the Ni-MOF surface was embellished with Au nanoparticles that had a mean size of less than 10 nm. The composite photocatalyst exhibited a reduction efficiency of 82% for Cr(VI) and degradation of 88% for RB dye. An experiment investigating radical scavenging confirmed that the production of superoxide radicals was the primary cause of the degradation of RB. The cyclic stability test revealed that the degrading efficiency of RB did not see a significant decline after seven consecutive cycles. The results highlight the favorable photocatalytic characteristics of the Ni-MOF/Au composite, indicating its potential use in environmental remediation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth of large-size semi-organic piperazinium tetrachlorozincate monohydrate (PTCZM) single crystal by Immersed Sankaranarayanan–Ramasamy (ISR) method for optoelectronic applications","authors":"B. Sahaya Infant Lasalle,&nbsp;Muthu Senthil Pandian,&nbsp;P. Karuppasamy,&nbsp;P. Ramasamy","doi":"10.1007/s10854-024-13914-5","DOIUrl":"10.1007/s10854-024-13914-5","url":null,"abstract":"<div><p>The high-quality and large-size semi-organic piperazinium tetrachlorozincate monohydrate (PTCZM) single crystal was grown by a novel Immersed Sankaranarayanan–Ramasamy (ISR) method. The length of the ISR crystal is 12 cm, and the diameter of the crystal is 1.5 cm. The ISR-method-grown PTCZM crystal is reported for the first time in the literature. The ampoule was specially designed for the growth of good-quality and bulk-size unidirectional single crystal by slow cooling condition. The unwanted temperature gradient developed in the solution in SR method was completely avoided; hence, the formation of secondary nucleation is avoided. This ISR method has similar growth process, optimization parameters and the quality of crystal is better than the SEST and SR method. Growth direction parallel to the gravity can be easily achieved; hence, slanted growth could be avoided within the ampoule and also linear transportation of embryos from solution to crystal–solution interface is achieved. The title crystal was subjected to various characterizations. The structural analysis (crystal system and cell parameter) of the grown PTCZM crystal was examined by single-crystal XRD and it exposed that the PTCZM crystal has a crystal monoclinic system and space group P121/c. Using powder X-ray diffraction (PXRD) analysis, miller index and (h k l) planes were identified. The crystalline perfection of the ISR-method-grown crystal was examined using a high-resolution X-ray diffraction (HRXRD). The presence of different vibrational assignments was identified by Fourier transform infrared spectrophotometer analysis. The optical behavior of the grown crystal was measured with a UV–Vis NIR spectrophotometer. The negative photoconductivity nature of the PTCZM crystal was measured by photoconductivity analysis. The luminescence properties of the PTCZM crystal were investigated using photoluminescence analysis. The optical homogeneity of the single crystal was examined across different portions (top, middle, and bottom). The thermal stability of PTCZM crystal was found to be upto 70 °C and the different levels of decomposition temperatures were analyzed using thermogravimetric differential thermal analysis (TG–DTA). The mechanical stability of the grown PTCZM crystal was studied using Vickers microhardness measurement. Furthermore, dielectric and piezoelectric analyses were employed to assess the electrical characteristics of each segment of the grown crystal. The laser damage threshold value of the ISR-method-grown PTCZM crystal was determined using a pulsed Nd:YAG laser (532 nm). The third-order nonlinear susceptibility was measured and analyzed by Z-scan technique using (He–Ne) laser of wavelength 632.8 nm. As presented in this paper, the newly introduced ISR method for crystal growth suggests that crystals grown using the ISR method are suitable for high-performance optical device applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}