Journal of Materials Science: Materials in Electronics最新文献

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Nonlinear electrical conductivity and breakdown strength of PPy/BN/EPDM composites for cable accessory applications
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14366-1
Tiandong Zhang, Shengkun Niu, Chuanxian Dai, Huiyang Zhang, Changhai Zhang, Yongquan Zhang, Lin Li, Hao Yu, Qingguo Chi
{"title":"Nonlinear electrical conductivity and breakdown strength of PPy/BN/EPDM composites for cable accessory applications","authors":"Tiandong Zhang,&nbsp;Shengkun Niu,&nbsp;Chuanxian Dai,&nbsp;Huiyang Zhang,&nbsp;Changhai Zhang,&nbsp;Yongquan Zhang,&nbsp;Lin Li,&nbsp;Hao Yu,&nbsp;Qingguo Chi","doi":"10.1007/s10854-025-14366-1","DOIUrl":"10.1007/s10854-025-14366-1","url":null,"abstract":"<div><p>The rubber-based cable accessory always serves as the joints component for connecting two power cables due to the length limitation of a single cable, which plays a key role but possesses a high failure rate in high-voltage transmission engineering. Because the large mismatch of electrical parameters between the ethylene-propylene-diene monomer (EPDM) rubber and cross-linked polyethylene of cable main insulation induces the severe electric fields distortion at the stress cone that threatens the safe operation of cable accessory. To develop the rubber materials with excellent nonlinear conductivity property is a favorable technique to relieve the electric field concentration in cable accessory. Different from previous studies, this work utilizes organic conductive polypyrrole (PPy) rather than inorganic conductive or semi-conductive fillers to induce nonlinear conductivity of EPDM. Meanwhile, the 10wt% hexagonal boron nitride (BN) is also incorporated into EPDM for reconciling the breakdown strength of the composites according to our previous studies. The results show that incorporating PPy organic filler can induce nonlinear conductivity characteristics of the PPy/BN/EPDM composites, which become more significant with the increase of PPy doping content. At 30 °C, 50 °C, and 70 °C, the nonlinear coefficient of 5wt%PPy/BN/EPDM is increased by 36.4%, 29.9%, and 47.7% compared to 1wt%PPy/BN/EPDM, and the threshold field strength is reduced by 44.7%, 46.66%, and 37.7%, respectively. The COMSOL Multiphysics field simulation results show that using PPy/BN/EPDM composites as enhanced insulation can relieve the electric field concentration especially at the root of the stress cone, guaranteeing the safe operation of the cable accessories in the electric transmission.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly efficient warm-white emission and energy transfer mechanism in apatite-like RbSr4(BO3)3: Dy3+,Eu3+ phosphors via heterovalent substitution engineering
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14408-8
Xinhui Li, Zhen Jia, Yan Song, Zhigang Wang, Shujuan Zhuang, Rongmin Wei, Shengnan Zhang, Yanxia Wang, Mingjun Xia
{"title":"Highly efficient warm-white emission and energy transfer mechanism in apatite-like RbSr4(BO3)3: Dy3+,Eu3+ phosphors via heterovalent substitution engineering","authors":"Xinhui Li,&nbsp;Zhen Jia,&nbsp;Yan Song,&nbsp;Zhigang Wang,&nbsp;Shujuan Zhuang,&nbsp;Rongmin Wei,&nbsp;Shengnan Zhang,&nbsp;Yanxia Wang,&nbsp;Mingjun Xia","doi":"10.1007/s10854-025-14408-8","DOIUrl":"10.1007/s10854-025-14408-8","url":null,"abstract":"<div><p>Based on the advantage of large structural inclusiveness, the apatite-like borate RbSr<sub>4</sub>(BO<sub>3</sub>)<sub>3</sub>:Dy<sup>3+</sup>,Eu<sup>3+</sup> warm-white fluorescent materials have been designed using a heterovalent substitution strategy. In RbSr<sub>4</sub>(BO<sub>3</sub>)<sub>3</sub>:Dy<sup>3+</sup>,Eu<sup>3+</sup>, the trivalent dysprosium and europium cations occupy the crystallization sites of divalent strontium cations. The trivalent dysprosium doped RbSr<sub>4</sub>(BO<sub>3</sub>)<sub>3</sub> exhibits bluish fluorescence with CIE color coordinates of (0.306, 0.347) and correlated color temperature of 6714 K. This is due to the blue emission originating from the <sup>4</sup>F<sub>9/2</sub> → <sup>6</sup>H<sub>15/2</sub> electron transition being more intense than the yellow emission derived from the <sup>4</sup>F<sub>9/2</sub> → <sup>6</sup>H<sub>13/2</sub> transition. Accordingly, the trivalent europium cations were incorporated into RbSr<sub>4</sub>(BO<sub>3</sub>)<sub>3</sub>:Dy<sup>3+</sup> to complement for the insufficient red light. Ultimately, the single-matrix warm-white fluorescent material RbSr<sub>4</sub>(BO<sub>3</sub>)<sub>3</sub>:Dy<sup>3+</sup>,Eu<sup>3+</sup> was successfully synthesized. RbSr<sub>4</sub>(BO<sub>3</sub>)<sub>3</sub>:0.6%Dy<sup>3+</sup>,0.8%Eu<sup>3+</sup> shows CIE color coordinates of (0.395, 0.344), a correlated color temperature of 3340 K, and an enhanced photoluminescence quantum yield (PLQY) of up to approximately 95.9%. This work not only provides a design strategy for novel fluorescent materials, but also endows high-performance single-component warm-white phosphors suitable for solid-state lighting applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on the interfacial reactions for Ag/Sn/Cu TLP during transient liquid phase soldering process
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14343-8
He Diao, Jiahao Liu, Xiangxiang Zhong, Fengyi Wang, Lijin Qiu, Yini Chen, Hongtao Chen, Xiaotong Guo, Mingyu Li
{"title":"Study on the interfacial reactions for Ag/Sn/Cu TLP during transient liquid phase soldering process","authors":"He Diao,&nbsp;Jiahao Liu,&nbsp;Xiangxiang Zhong,&nbsp;Fengyi Wang,&nbsp;Lijin Qiu,&nbsp;Yini Chen,&nbsp;Hongtao Chen,&nbsp;Xiaotong Guo,&nbsp;Mingyu Li","doi":"10.1007/s10854-025-14343-8","DOIUrl":"10.1007/s10854-025-14343-8","url":null,"abstract":"<div><p>Transient liquid phase (TLP) bonding is a promising electronic packaging technology to satisfy the needs of operating at high temperatures due to the increasing power density of power electronic devices. More and more power chips are finished with Ni/Ag metallization, while the top metal is Cu in direct bonded copper. However, interfacial reactions in Cu/Sn/Ag system were rarely studied. In order to explore the intermetallic reaction kinetics between solder and substrate in Cu/Sn/Ag system, this study investigated the effect of different reflow temperatures (250–350 °C) and time (30–960 s) on the microstructure evolution of the interfaces of three different TLP systems (Cu/Sn, Ag/Sn and Cu/Sn/Ag), and the growth kinetics of two intermetallic compounds (IMCs) Cu<sub>6</sub>Sn<sub>5</sub> and Ag<sub>3</sub>Sn. The results indicate that the activation energy of Cu<sub>6</sub>Sn<sub>5</sub> in Cu/Sn/Ag TLP increases by 42.8% compared to Cu/Sn TLP, and the activation energy of Ag<sub>3</sub>Sn increases by 34.1% compared to Ag/Sn TLP. During the solid–liquid process of Ag/Sn/Cu TLP, Ag atoms from the Ag substrate side will cross through the molten Sn layer to form Ag<sub>3</sub>Sn on the surface of Cu<sub>6</sub>Sn<sub>5</sub> IMCs on the Cu substrate side. Meanwhile, Cu atoms from the Cu substrate side will reach Ag substrate side to form Cu<sub>6</sub>Sn<sub>5</sub> on the surface of Ag<sub>3</sub>Sn IMCs. Heterogeneous IMCs at the interface hinder the grain boundary/melting channel for the diffusion of substrate atoms, increasing the activation energy and inhibiting their growth.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of LLZO electrolytes doped with Ta5+ and their structural and electrical characteristics for solid-state energy storage applications
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14362-5
V. Janakiraman, Max Savio, Abdullah N. Alodhayb, Muthumareeswaran Muthuramamoorthy, M. Ammal Dhanalakshmi, M. Vimalan, Mathivanan Durai, K. Ganesh Kumar
{"title":"Impact of LLZO electrolytes doped with Ta5+ and their structural and electrical characteristics for solid-state energy storage applications","authors":"V. Janakiraman,&nbsp;Max Savio,&nbsp;Abdullah N. Alodhayb,&nbsp;Muthumareeswaran Muthuramamoorthy,&nbsp;M. Ammal Dhanalakshmi,&nbsp;M. Vimalan,&nbsp;Mathivanan Durai,&nbsp;K. Ganesh Kumar","doi":"10.1007/s10854-025-14362-5","DOIUrl":"10.1007/s10854-025-14362-5","url":null,"abstract":"<div><p>The electrolyte Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> (LLZO) has emerged as a promising contender for solid-state energy storage applications. The present work uses a solid-state reaction technique to synthesize Ta-doped Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> (LLZO: xTa<sup>5+</sup>) powder. The powder used to make the pellets is annealed for varying lengths of time. The impact of this process on the structural and electrical characteristics of LLZO: xTa<sup>5+</sup> is thoroughly examined. High-resolution transmission electron microscopy (HRTEM) and selected area of diffracted light (SAED) are used to analyze the microstructural characteristics of the sintered powder, respectively. HRTEM image of LLZO indicates that after sintering, the xTa<sup>5+</sup> powder has uniformly distributed, well-structured grains across the surface. The X-ray photoelectron spectroscopy (XPS) spectra results provide strong evidence for the existence of Ta, O, Zr, Li, and La in the synthesized electrolyte. The cyclic voltammetry results validate that 0.15 M.W.% Ta<sup>5+</sup>-doped LLZO gives a higher anodic current density (± 5 mA cm<sup>2</sup>) than pure (± 2.5 mA cm<sup>2</sup>) and 0.25 M.W.% (± 3.5 mA cm<sup>2</sup>) dopant percentage for the same potential levels. The electrochemical impedance spectroscopy (EIS) shows the lower R (resistance), whereas slanting straight line of the Nyquist plot indicates the Warburg impedance, signifying the high conductivity of the electrode. The dielectric constant and its corresponding loss, with respect to change in frequency and different temperature conditions were investigated for 0.15 M.W.% Ta<sup>5+</sup>-doped LLZO pellet.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of La–Bi co-substitution on the structural, morphological, and dielectric properties of SrFe12O19: a comprehensive study
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14365-2
Ahmad Gholizadeh
{"title":"Impact of La–Bi co-substitution on the structural, morphological, and dielectric properties of SrFe12O19: a comprehensive study","authors":"Ahmad Gholizadeh","doi":"10.1007/s10854-025-14365-2","DOIUrl":"10.1007/s10854-025-14365-2","url":null,"abstract":"<div><p>This research investigates sol–gel auto-combustion synthesized Sr<sub>1-x</sub>La<sub>x</sub>Fe<sub>12-y</sub>Bi<sub>y</sub>O<sub>19</sub> (<i>x</i> = 0–0.25, <i>y</i> = 0–0.5) nanoparticles, focusing on La<sup>3+</sup> and Bi<sup>3+</sup> co-substitution effects on structural and dielectric properties. X-ray diffraction confirms a single-phase M-type hexagonal ferrite structure (space group <i>P</i>6<sub>3</sub>/<i>mmc</i>) with crystallite sizes decreasing from 20 to 13 nm and lattice parameters increasing from 682.08 to 704.73 Å upon La<sup>3+</sup> and Bi<sup>3+</sup> co-substitution. Field-emission scanning electron microscopy analysis reveals that the La/Bi substitution results in changes to the morphology and particle size of the samples. Dielectric properties analyzed using impedance spectroscopy reveal a decreased real part of dielectric permittivity with increasing frequency and co-substitution, attributable to interfacial polarization and microstructural changes. The imaginary parts of the electrical modulus diagram exhibit a relaxation peak shift towards lower frequencies with co-substitution, indicating enhanced charge carrier mobility and Debye dielectric response. Findings offer comprehensive insights for tailoring properties in energy storage devices, electronic components, and related fields.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review of quantum dots and nanoparticles-dispersed nematic liquid crystals: electro-optical and dielectric properties
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14339-4
Rajat Takkar, Vandna Sharma,  Pooja, Pankaj Kumar
{"title":"Review of quantum dots and nanoparticles-dispersed nematic liquid crystals: electro-optical and dielectric properties","authors":"Rajat Takkar,&nbsp;Vandna Sharma,&nbsp; Pooja,&nbsp;Pankaj Kumar","doi":"10.1007/s10854-025-14339-4","DOIUrl":"10.1007/s10854-025-14339-4","url":null,"abstract":"<div><p>Quantum dots (QDs) and nanoparticles (NPs) including carbon dots (c-dots), nanospheres, nanowires, nanorods, etc. have garnered significant attention due to their unique optical and electronic properties, making them promising candidates for enhancing the functionality of liquid crystals (LCs)-based devices. Herein, this review provides an overview of the electro-optical (EO) and dielectric properties of these composites, highlighting the improvements in threshold and operating voltages; opaque and transparent states; contrast ratio; response time, etc. brought about by the inclusion of various types of NPs. Further sections are delved into the synthesis and dispersion methods of QDs in LCs, along with the challenges and solutions associated with achieving stable and uniform dispersions. In addition, the potential applications of QDs, c-dots, NPs, and nanorods in nematic LCs as dopants are explored, examining their impact on the performance characteristics of the composites. The integration of these dopants into nematic LCs have been discussed and showed the enhancement of conductivity, dielectric anisotropy, and dielectric strength, and reduces the field screening effect, paving the way for their application in various optoelectronic devices such as quantum computing, photovoltaic devices, LC displays (LCDs), and light-emitting diodes (LEDs). This review provides valuable insights into the utilization of QDs and related NPs with nematic LC composites, underscoring their potential for sustainability and innovation in advanced energy-efficient optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of high-entropy oxides (La0.2Ba0.2Cu0.2Sn0.2Ni0.2)3O4
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14345-6
Zheng Chen, Junxin Hou, Xiangwei Jin, Lingxia Zheng, Fenghua Liu, Zhixiang Li
{"title":"Electrical properties of high-entropy oxides (La0.2Ba0.2Cu0.2Sn0.2Ni0.2)3O4","authors":"Zheng Chen,&nbsp;Junxin Hou,&nbsp;Xiangwei Jin,&nbsp;Lingxia Zheng,&nbsp;Fenghua Liu,&nbsp;Zhixiang Li","doi":"10.1007/s10854-025-14345-6","DOIUrl":"10.1007/s10854-025-14345-6","url":null,"abstract":"<div><p>The utilization of the high-entropy effect and the cocktail effect in high-entropy oxides has significantly expanded the horizon for material design and performance enhancement. Consequently, the fabrication of high-entropy oxides has emerged as a focal point of recent research. High-entropy oxides that serve as cathode materials for battery electrodes must exhibit high electrical conductivity. In this study, a high-entropy oxide (La<sub>0.2</sub>Ba<sub>0.2</sub>Cu<sub>0.2</sub>Sn<sub>0.2</sub>Ni<sub>0.2</sub>)<sub>3</sub>O<sub>4</sub> was synthesized using the high-temperature solid-state reaction method. A systematic investigation was conducted to analyze the impact of varying sintering temperatures on the phase structure and electrical properties of the material. The findings indicate that the high-entropy oxide under study possesses commendable electrical conductivity. The electrical conductivity of the material was observed to increase initially and then decrease with the elevation of sintering temperature. Optimal electrical conductivity was achieved at a sintering temperature of 1280 °C. The temperature-dependent electrical conductivity of the sample was found to increase initially and then decrease, with a nominal conductivity of 20.062 S·cm<sup>−1</sup> at 25 °C, and a stepwise increase to 30.06 S·cm<sup>−1</sup> at 250 °C. This material holds promising potential for applications in energy, electronics, and catalysis sectors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
One-step hydrothermal synthesis of Ni(OH)2/activated rice husk carbon nanocomposites for electrochemical performance enhancement of symmetric supercapacitor
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI: 10.1007/s10854-025-14402-0
Kwanruthai Wongsaprom, Nattarika Boonraksa, Adulphan Pimsawat, Sujittra Daengsakul, Ekaphan Swatsitang
{"title":"One-step hydrothermal synthesis of Ni(OH)2/activated rice husk carbon nanocomposites for electrochemical performance enhancement of symmetric supercapacitor","authors":"Kwanruthai Wongsaprom,&nbsp;Nattarika Boonraksa,&nbsp;Adulphan Pimsawat,&nbsp;Sujittra Daengsakul,&nbsp;Ekaphan Swatsitang","doi":"10.1007/s10854-025-14402-0","DOIUrl":"10.1007/s10854-025-14402-0","url":null,"abstract":"<div><p>This study investigated the electrochemical performance enhancement of symmetric supercapacitor, having Ni(OH)<sub>2</sub>-activated rice husk carbon (ACRH) nanocomposites (referred to as ARCH-Ni(OH)<sub>2</sub>) as electrodes. ARCH-Ni(OH)<sub>2</sub> were synthesized by incorporating different amount of nanocrystalline nickel hydroxide (Ni(OH)<sub>2</sub>) through a simple one-step hydrothermal method. The obtained ARCH-Ni(OH)<sub>2</sub> featured a hierarchical porous structure with nanocrystalline Ni(OH)<sub>2</sub> on the ACRHs surface, which enhanced charge storage capacity. Electrochemical performance testing in a three-electrode system revealed that the ACRH-Ni(OH)<sub>2</sub>–2 electrode exhibited the highest specific capacitance of 391.30 F/g at a current density of 1 A/g. This outstanding capacitance is attributed to its low series resistance (0.66 Ω) and charge transfer resistance (0.20 Ω). Furthermore, the electrode demonstrated excellent cycling stability, maintaining 96.64% of its initial capacitance after 5000 cycles at a current density of 5 A/g. The fabricated symmetric supercapacitor coin cells of ACRH-Ni(OH)<sub>2</sub>–2//ACRH-Ni(OH)<sub>2</sub>–2 exhibited a high energy density of 22.56 Wh/kg at a power density of 833.49 W/kg and successfully powered a light-emitting diode (LED) for over 1500s, demonstrating its practical applicability. These findings indicate that nanocomposite ACRH-Ni(OH)<sub>2</sub>–2 is a promising electrode material for sustainable energy storage devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of electrical properties of pure and copper-doped diamond-like carbon interfacial-layered Schottky devices under different temperature conditions
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-12 DOI: 10.1007/s10854-025-14360-7
Mustafa Şahin, Ahmet Kaymaz, Aylar Feizollahi Vahid, Enise Özerden, Şemsettin Altındal
{"title":"Comparison of electrical properties of pure and copper-doped diamond-like carbon interfacial-layered Schottky devices under different temperature conditions","authors":"Mustafa Şahin,&nbsp;Ahmet Kaymaz,&nbsp;Aylar Feizollahi Vahid,&nbsp;Enise Özerden,&nbsp;Şemsettin Altındal","doi":"10.1007/s10854-025-14360-7","DOIUrl":"10.1007/s10854-025-14360-7","url":null,"abstract":"<div><p>In this study, some electrical parameters of the pure and copper-doped diamond-like carbon (DLC) interfacial-layered Schottky devices have been investigated under different temperature conditions. Thus, it was aimed to determine the effects of copper doping on the electrical properties of the devices. Experimental results showed that although different behaviors were observed in both devices in some specific temperature regions, the series resistance values ​​in the copper-doped device gave more stable results depending on the temperature and voltage changes. On the other hand, while the surface states in the DLC interlayered device varied between 10<sup>13</sup> and 10<sup>14</sup> eV<sup>−1</sup> cm<sup>−2</sup> levels, lower values (10<sup>12</sup>–10<sup>13</sup> eV<sup>−1</sup> cm<sup>−2</sup> levels) were observed in the copper-doped device. Moreover, voltage-dependent ideality factor and barrier height exhibited classical behavior as in the literature. However, the copper-doped device still exhibited more stable behaviors. As a result, it has been understood that the electrical properties of the copper-doped device give more regular/stable and higher-quality results.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14360-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interfacial characteristics of seed copper/titanium tungsten alloy/indium tin oxide electrode for silicon heterojunction solar cell under damp heat
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-12 DOI: 10.1007/s10854-025-14390-1
Jae-Seong Jeong
{"title":"Interfacial characteristics of seed copper/titanium tungsten alloy/indium tin oxide electrode for silicon heterojunction solar cell under damp heat","authors":"Jae-Seong Jeong","doi":"10.1007/s10854-025-14390-1","DOIUrl":"10.1007/s10854-025-14390-1","url":null,"abstract":"<div><p>This study entailed the fabrication of a layer structure of a grid electrode metallisation for silicon heterojunction (SHJ) solar cell, consisting of a seed layer of Cu/ TiW/ ITO/ a-Si:H. The interfacial characteristics of the barrier of titanium tungsten alloy (TiW) during damp heat aging (85 ºC, 85%rh for 1000 h) was investigated. The barrier stability of the TiW layer was evaluated in two-layer structures: TiW/ indium tin oxide (ITO) and seed Cu/ TiW/ ITO. Furthermore, two TiW layer thicknesses of 20 and 100 nm were considered. The TiW/ ITO structure was stable. However, the seed Cu/ TiW/ ITO structure exhibited various physical and chemical changes owing to the oxidation of the seed Cu layer. A cuprous oxide phase formed on Cu(111) during damp heat aging, which triggered interdiffusion of TiW toward the seed Cu layer. TiW thickness of 100 nm is appropriate for the long-term stability of grid electrode metallisation in SHJ solar cells under damp heat aging.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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