Journal of Materials Science: Materials in Electronics最新文献

{"title":"Nickel oxide and carbon allotropes-based nanohybrids show enhanced efficiency of p-type dye-sensitized solar cells","authors":"Nidhi Prajapati,&nbsp;Preeti Sehgal,&nbsp;Hiren Machhi,&nbsp;S. S. Soni,&nbsp;C. N. Murthy","doi":"10.1007/s10854-025-14897-7","DOIUrl":"10.1007/s10854-025-14897-7","url":null,"abstract":"<div><p>In this study, we investigated the optimal carbon allotropes to enhance the performance of p-type dye-sensitized solar cells (DSSCs) with NiO. Various allotropes of carbon, including multi-walled carbon nanotubes (MWCNT), reduced graphene oxide (RGO), graphene quantum dots (GQD), and fullerene (C60), were examined for their distinct structural and electrochemical properties. When incorporated with NiO, these carbon allotropes displayed a power conversion efficiency (PCE) trend of (NiO@GQD) NG &lt; (NiO@fullerene) NF &lt; (NiO@RGO) NR &lt; (NiO@f-MWCNT) NM, with corresponding PCE values of 0.55%, 0.60%, 0.72%, and 0.80%. The quantum efficiency (QE) values of NG, NR, NF, and NM were found to be approximately 62%, 65%, 70%, and 80%, respectively. Among the four NiO-based nanohybrids, the NM-based device exhibited the highest PCE of 0.80%, with a short-circuit current density (Jsc) of 2.53 mA cm⁻², an open-circuit voltage (Voc) of 0.56 V, and a fill factor (FF) of 56.46%. This superior performance is attributed to the enhanced dye adsorption and rapid charge transfer properties facilitated by the NM nanohybrid. </p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144131484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET","authors":"Hongxiao Lin,&nbsp;Yuanhao Miao,&nbsp;Yuhui Ren,&nbsp;Yongkui Zhang,&nbsp;Qingzhu Zhang,&nbsp;Wenjuan Xiong,&nbsp;Jiahan Yu,&nbsp;Xuewei Zhao,&nbsp;Renrong Liang,&nbsp;Jun Xu,&nbsp;Tianchun Ye,&nbsp;Henry H. Radamson","doi":"10.1007/s10854-025-14927-4","DOIUrl":"10.1007/s10854-025-14927-4","url":null,"abstract":"<div><p>In this work, we present the influence of structure design on the performance of novel fully depleted silicon-on-insulator (FDSOI) SiGe p-type FinFETs. The effects of Ge content, strain in the epitaxial SiGe channel and gate length (L_G) on the device’s electrical characteristics are systematically studied. Among the studied SiGe compositions, Si_0.75Ge_0.25 exhibits superior performance over Si_0.7Ge_0.3, as the latter shows the increased defect density due to strain relaxation, degrading carrier transport and the overall device performance. The strain in the Si_0.75Ge_0.25 channel is tailored to be 0.65% according to the nano beam diffraction (NBD) results, which enhances carrier mobility and drive current (I_on). As the L_G decreases from 500 to 30 nm, the device exhibits a well-balanced trade-off between high drive current and low leakage current, demonstrating the effectiveness of the proposed device structure, while the subthreshold swing (SS) shows a progressive deterioration with decreasing L_G, reflecting the growing impact of short-channel effects and interface states. At L_G = 30 nm, the drain current (I_d), maximum transconductance (G_{m, max}), and I_on/I_off ratio can reach up to 0.19mA/μm, 33.2μS/μm, and 6.9 × 10⁵, respectively. These improvements were attributed to the enhanced hole mobility from strain engineering and the superior electrostatic control of the junctionless architecture. Our work provides valuable insights into the optimization of junctionless FDSOI FinFETs, enhancing their potential for low-power, high-performance semiconductor applications in the beyond Moore era.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144131485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of charge carrier transport in thin organic films used in write once read many resistive memory devices","authors":"Nilima Biswas,&nbsp;Koshik Naha,&nbsp;Shyam Kumar Bhattacharjee,&nbsp;Syed Arshad Hussain,&nbsp;Debajyoti Bhattacharjee","doi":"10.1007/s10854-025-14978-7","DOIUrl":"10.1007/s10854-025-14978-7","url":null,"abstract":"<div><p>The study explored the underlying mechanism of resistive switching behaviour in a Write Once Read Many (WORM) memory device using an organic dye, Methylene Blue (MB), as the active layer. The device architecture consisted of two electrodes: Indium Tin Oxide (ITO) as the bottom electrode and gold (Au) as the top electrode. Our experimental observations revealed the intricate interplay of electrons and holes conduction within the MB layer. The crucial role of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of MB have been elucidated in governing charge carriers transport in the active layer of the memory device. The application of positive and negative bias voltages induced a reversible exchange of dominant charge carriers (electrons and holes) within the device. High temperature studies also showed the same WORM characteristics in the device and also confirmed the nature of charge carriers. The fabricated WORM memory device exhibited good performance characteristics. Notably, it demonstrated good data retention capabilities exceeding 5 h. Furthermore, the device showed a substantial memory window having ON–OFF ratio of the order of 10³. The device also exhibited remarkable read endurance, withstanding over 2600 read cycles without significant performance degradation. A high device yield of approximately 74% underscored the robustness and reproducibility of the fabrication process. Moreover, the device maintained excellent stability over an extended period of 150 days, confirming its long-term reliability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sputtered ultra-thin Au coating on Cu wire: enhancing ball formation and reliability for advanced wire bonding","authors":"Bo-Chin Huang,&nbsp;Bo-Ding Wu,&nbsp;Chien-Te Huang,&nbsp;Fei-Yi Hung,&nbsp;Jie-Yun Zheng","doi":"10.1007/s10854-025-14975-w","DOIUrl":"10.1007/s10854-025-14975-w","url":null,"abstract":"<div><p>Au-coated Cu wire mitigates Cu oxidation while preserving excellent electrical and thermal conductivity, thereby enhancing second-bond reliability. However, conventional Au coatings are often too thick, disrupting free air ball (FAB) formation through molten Au encapsulation during the electronic flame-off (EFO) process. This study employs sputtering to maintain the Au coating at ~ 20 nm, improving FAB morphology. Thermal stability, bonding strength, and interfacial properties were evaluated via heat treatment and high-temperature aging. Results show that Au-coated Cu wire retained coating integrity after 300 °C treatment yet degraded beyond 400 °C due to Au diffusion along grain boundaries, causing interfacial defects. Aging tests (175 °C, 24–72 h) confirmed severe oxidation in Cu wire, whereas Au-coated Cu wire remained stable under its protective Au layer. FAB morphology was similar to Cu wire, with no Au segregation. Bonding tests revealed strong first bond adhesion in both wires, but aged Cu wire exhibited failures that Au-coated Cu wire avoided. Compared to Cu and Pd-coated Cu wires, Au-coated Cu wire also showed the lowest electrical resistance. Overall, sputter-deposited Au-coated Cu wire effectively improves oxidation resistance, FAB formation, and bonding reliability, offering strong potential for semiconductor packaging.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"BaxBi(1-x)TixFexO3 (BBTFx) composite as promising material for advanced electronic and photonic applications","authors":"Manali N. Shah,&nbsp;Devang D. Shah,&nbsp;P. N. Gajjar,&nbsp;Rajshree B. Jotania,&nbsp;R. K. Mehta","doi":"10.1007/s10854-025-14915-8","DOIUrl":"10.1007/s10854-025-14915-8","url":null,"abstract":"<div><p>Barium bismuth titanium iron oxide compounds with the general formula Ba_<i>x</i>Bi_{(1−<i>x</i>)}Ti_<i>x</i>Fe_<i>x</i>O₃, where <i>x</i> ranges from 0.0 to 1.0 in steps of 0.25, were synthesized using the conventional solid-state method and systematically characterized. X-ray diffraction analysis confirmed the formation of a single-phase perovskite structure with minimal secondary phases. Fourier transform infrared spectroscopy revealed characteristic metal–oxygen vibrational modes associated with iron–oxygen and titanium–oxygen bonds. Scanning electron microscopy showed well-defined grains with low porosity and variations in grain morphology across different compositions. Ultraviolet–visible absorption studies and Tauc plots indicated a tunable energy band gap, supporting the material’s potential for optoelectronic applications, such as ultraviolet photodetectors. Dielectric and impedance spectroscopy revealed frequency- and temperature-dependent behavior with non-Debye-type relaxation. Preliminary polarization–electric field measurements demonstrated improved thermal stability, reduced leakage current, and enhanced ferroelectric behavior, suggesting a possible increase in Curie temperature compared to barium titanate. These results highlight the BBTF_x system as a promising candidate for high-temperature electronic and photonic applications, including capacitors, sensors, and memory devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial reactions and growth kinetics of Sn-58Bi solder with p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 thermoelectric materials","authors":"Chao-hong Wang,&nbsp;Chun-wei Chiu","doi":"10.1007/s10854-025-14901-0","DOIUrl":"10.1007/s10854-025-14901-0","url":null,"abstract":"<div><p>Bi₂Te₃-based alloys, including p-type (Bi,Sb)₂Te₃ and n-type Bi₂(Te,Se)₃, are the most widely used thermoelectric (TE) materials. Eutectic Sn-58 wt.%Bi solder is commonly employed for assembling p-n pairs in commercial TE modules. This study systematically investigates the interfacial reactions of Sn-58Bi solder with p-type and n-type TE substrates under various temperatures and aging durations. In addition, the growth kinetics of intermetallic compounds (IMCs) are analyzed to better understand the interfacial behavior. In the liquid-state reaction with p-type (Bi,Sb)₂Te₃, the formed SnTe phase exhibited a porous microstructure composed of fine grains. Notably, the IMC growth followed a linear relationship with aging time, indicating a reaction-limited growth mechanism. The porous structure likely facilitated the rapid diffusion of Sn through the SnTe layer, thereby reducing diffusion resistance and accelerating the interfacial reaction. In the solid-state reactions with (Bi,Sb)₂Te₃, the dense SnTe phase gradually thickened with aging time, exhibiting diffusion-controlled parabolic growth behavior. Prolonged aging cause substantial Sn depletion from the solder, leading to the accumulation of a thick Bi layer at the interface. In both liquid-state and solid-state reactions with n-type Bi₂(Te,Se)₃, the SnTe phase and an underlying thin BiTe layer formed simultaneously. Notably, the formation of these IMC phases was significantly suppressed compared to those observed in reactions with p-type (Bi,Sb)₂Te₃. In both cases, the IMCs exhibited diffusion-controlled growth behavior. The corresponding growth kinetics parameters, including activation energies and growth rate constants, were also determined.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of synthesis conditions on morphology, surface chemistry and electrochemical performance of nickel ferrite nanoparticles for lithium-ion battery applications","authors":"Reshma S Babu,&nbsp;Eszter Madai,&nbsp;Durga S Nair,&nbsp;Prasad Gonugunta,&nbsp;Seyedamirhossein Mohseni Armaki,&nbsp;Ruud Hendrikx,&nbsp;Thamayanthi Panneerselvam,&nbsp;Ramaswamy Murugan,&nbsp;V. V. Ravi Kanth Kumar,&nbsp;Peyman Taheri,&nbsp;Arjan Mol,&nbsp;N. Satyanarayana,&nbsp;Prasaanth Ravi Anusuyadevi","doi":"10.1007/s10854-025-14886-w","DOIUrl":"10.1007/s10854-025-14886-w","url":null,"abstract":"<div><p>In the search for effective high-tech materials for energy conversion and storage devices, spinel-structured nickel ferrite (NiFe₂O₄) has been identified as a promising anode material for lithium-ion batteries (LIBs). However, the influence of different morphologies and surface properties of NiFe₂O₄ nanoparticles on battery performance is hardly addressed. To understand the effect of different morphologies and surface properties on the lithium-ion storage performance, NiFe₂O₄ nanoparticles were synthesized through four different synthesis conditions: NFO-S, NFO-U, NFO-G, and NFO-C. The formation of polycrystalline inverse spinel NiFe₂O₄ was confirmed through XRD, FTIR, and Raman spectroscopy. The morphologies of the obtained samples were studied using FESEM, and it was found that the four different synthesis conditions employed here enabled us to obtain NiFe₂O₄ with four different morphologies. The surface chemistry, surface area and porosity of the NiFe₂O₄ samples were respectively characterized using XPS and BET. The electrochemical performance of the four NiFe₂O₄ samples as anode material was studied by fabricating lithium-ion half-cells. NiFe₂O₄ sample obtained from surfactant-free synthesis condition (NFO-S) displayed a high initial discharge and charge capacity of 2258 mAh/g and 1815 mAh/g, respectively at the current density of 100 mA/g. Even after 100 cycles, NFO-S showed a better discharge capacity of 116 mAh/g at the current density of 100 mA/g, compared to the other samples studied here. The observed higher capacity of the NFO-S sample is attributed to the higher surface area (40.8 m²/g) and pore volume (0.190 cm³/g). The NiFe₂O₄ sample prepared with cationic CTAB surfactant (NFO-C) showed better cyclic stability with a stable coulombic efficiency of 98.5% at the 100th cycle, mainly attributed to its nanocube morphology with lower surface area (16.1 m²/g) and pore volume (0.087 cm³/g).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14886-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling the potential of a sustainable source biochar in flexible temperature sensor fabrication","authors":"Özgür Yasin Keskin,&nbsp;Mustafa Erol","doi":"10.1007/s10854-025-14936-3","DOIUrl":"10.1007/s10854-025-14936-3","url":null,"abstract":"<div><p>This study unveils a novel composite material for flexible temperature sensor applications, marking a significant step forward in the field of materials science and engineering. The conductive fillers, graphite, and biochar were used in various concentrations, along with the sodium silicate solution, which served as the matrix material. The fluid nature of the sodium silicate solution makes it optimal for screen and inkjet printing techniques. Composites with varying concentrations of graphite and biochar were prepared and deposited on a flexible substrate. Percolation and co-percolation studies were conducted. The electrical, chemical, morphological, and structural properties of the raw materials and composites were characterized using a Hall effect device, Raman spectroscopy, scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy, an X-ray diffractometer (XRD), and digital multimeters. The impact of conductive filler concentrations and the synergistic effect of graphite and biochar on sensor performance were investigated and compared, revealing innovative and promising results. The results show that biochar-based samples were superior to graphite-based samples in terms of good repeatability, better long-term stability, and response time. The combination of graphite and biochar also positively affected sensor performance in terms of sensor stability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14936-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ag/Ga2O3/n-Si Schottky-type photodetector for visible light detection","authors":"Mehmet Yilmaz,&nbsp;Adem Kocyigit,&nbsp;Erman Erdogan,&nbsp;Murat Yıldırım,&nbsp;Maria Luisa Grilli","doi":"10.1007/s10854-025-14892-y","DOIUrl":"10.1007/s10854-025-14892-y","url":null,"abstract":"<div><p>Gallium oxide (Ga₂O₃) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized <i>β</i>-phase Ga₂O₃ on n-Si substrate using the electrodeposition technique, and investigated its properties for use in photodetector applications for broadband detection combining Si and Ga₂O₃. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the Ga₂O₃. Ag metallic contacts on the Ga₂O₃/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga₂O₃/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (<i>I-V</i>) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (<i>EQE</i>) were determined and discussed in detail. The Ag/Ga₂O₃/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 10¹² Jones specific detectivity, and very high <i>EQE</i> value of 2.18 × 10⁴% at 700 nm wavelength. The obtained Ag/Ga₂O₃/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. These photodetectors can be used in visible light communication, light sensing and cameras.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14892-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure evolution and shear behavior of Pb-16Sn-7.5Sb-xAg/Ni joints","authors":"Fan Wang,&nbsp;Xiaodi Zhang,&nbsp;Richu Wang,&nbsp;Jian Peng","doi":"10.1007/s10854-025-14829-5","DOIUrl":"10.1007/s10854-025-14829-5","url":null,"abstract":"<div><p>The Pb16Sn7.5Sb-based solder with a melting point of 240 °C can be used as an ideal candidate solder in this temperature range. The microstructure and shear strength of Pb16Sn7.5Sb-xAg/Ni solder joints after soldering for 2 ~ 60 min were investigated in present work. The Ni₃Sn₂ + NiSb phases formed at the interface of the Pb-16Sn-7.5Sb-xAg/Ni joints. The thickness of Ni₃Sn₂ + NiSb phases was proportional to the square root of time. However, the Ag addition increased the activation energy of the Ni₃Sn₂ and NiSb phases, which inhibited the rapid growth of the Ni₃Sn₂ and NiSb phases. Therefore, the thickness of Ni₃Sn₂ + NiSb phases of Pb16Sn7.5Sb-1Ag/Ni joint was 0.35 μm after soldering for 2 min, the shear strength of the joint can reach 25.9 MPa. The shear strength increased to 32.5 MPa when the thickness of the Ni₃Sn₂ + NiSb phase was 0.38 μm after 5 min soldering. It decreased to 23.5 MPa after prolonged the soldering time as the Ni₃Sn₂ + NiSb phase thickness increased. A uniform Ni₃Sn₂ + NiSb layer with adequate thickness is the key for the mechanical properties of the Pb-16Sn-7.5Sb-xAg/Ni.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}