Journal of Materials Science: Materials in Electronics最新文献

{"title":"Influence of low sintering temperature on the structural, morphological, and dielectric properties of (Bi0.4Ba0.1)Na0.5TiO3 ceramics","authors":"Ayushi Sharma,&nbsp;Manpreet Singh,&nbsp;Kamal Kishore,&nbsp;Dinesh Pathak,&nbsp;Khalid Mujasam Batoo,&nbsp;Taimun Qaisar,&nbsp;Ahmed Ahmed Ibrahim,&nbsp;Deepak Kumar,&nbsp;Kais Iben Nassar,&nbsp;Madan Lal","doi":"10.1007/s10854-025-14459-x","DOIUrl":"10.1007/s10854-025-14459-x","url":null,"abstract":"<div><p>This paper presents the preparation of ceramics with (Bi_0.4Ba_0.1)Na_0.5TiO₃ via a conventional solid-state reaction method and their sintering at low temperatures of 850, 900, and 950 °C for 3 h, respectively. Bi₂O₃ and Na₂O₃ were used to suppress the volatility of Bi and Na ions during the sintering of (Bi_0.4Ba_0.1)Na_0.5TiO₃ ceramics. X-ray diffraction (XRD), Scanning electron microscope (SEM), and an LCR meter were used to analyze these ceramics' structural, morphological, and dielectric properties. Rhombohedral crystal lattice (with space group R3c) is confirmed by Rietveld’s refinement of the XRD pattern. W–H plots show an increase in crystallite strain from 0.77 × 10^–3 to 1.5 × 10^–3 due to a decrease in average crystallite size from 133.32 to 119.52 nm. With an increase in sintering temperature, the grain size increased from 0.55 to 2.30 μm on average based on SEM images. Dielectric spectra revealed that the magnitude of the dielectric constant (<i>ε</i>) decreases with frequency increase and is explained by Maxwell–Wagner’s Model. The ferroelectric phase transition temperature is shifted to a higher temperature, which makes the material feasible for energy storage applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosting the morphological, structural, optical, and dielectric characteristics of MgO-SiC nanomaterials merged with organic polymer for high-performance energy storage devices","authors":"Majeed Ali Habeeb,&nbsp;Idrees Oreibi,&nbsp;Rehab Shather Abdul Hamza","doi":"10.1007/s10854-025-14475-x","DOIUrl":"10.1007/s10854-025-14475-x","url":null,"abstract":"<div><p>\u0000The objective of the current investigation is to create polymer nanocomposites (PNCs) by combining magnesium oxide (MgO)/ silicon carbide (SiC) nanomaterials (NMs) and Poly(methyl methacrylate) (PMMA) for use in a diverse range of electrical and optical nanodevices. The films of PMMA/MgO-SiC PNCs were produced using the casting process. The structural properties of PMMA/MgO-SiC polymer nanocomposites (PNCs) were investigated using optical microscopy (OM) and Fourier-transform infrared spectroscopy (FTIR). In addition, the optical properties of PMMA/MgO-SiC PNCs were also examined. The Optical Microscope (OM) has shown that there is a uniform dispersion of MgO-SiC Nanomaterials (NMs) within the polymer structure of PMMA. Also, the Fourier Transform Infrared Spectroscopy (FTIR) analysis confirms the presence of a physical contact with the PMMA polymer and the MgO-SiC NMs. The spectral properties were evaluated throughout a spectrum of wavelengths spanning around (200–780) nm. The outcomes indicated that the absorption value of PMMA rose by 1200% and 1800% at wavelengths (380 nm) (UV/spectra) and 560 nm (VIS/spectra), respectively, when the ratio of MgO-SiC NMs was 5 wt.%. The optical transmission of PMMA fell by 113% and 118% at wavelengths of 380 nm and 560 nm, respectively. These findings suggest that PMMA/MgO-SiC PNCs films have potential uses in tiny electronic devices and optics. The analysis revealed the existence of two distinct types of optical band gaps: an indirect forbidden energy gap and an indirect allowed energy gap. The indirect forbidden energy gap decreased from 4.63 to 2.95 eV, while the indirect allowed energy gap decreased from 5.12 to 3.96 eV, as the total amount of MgO-SiC NMs increased to 5 wt.%. This distinction between the two band gap types emphasizes the tunability of the PMMA/MgO-SiC PNCs for specific optical applications. The optical properties of PMMA were enhanced when the concentration of MgO-SiC NMs increased. The analysis of dielectric properties revealed that the dielectric constant and loss of PMMA/MgO-SiC PNCs decreased as the frequency increased, but increased as the ratio of MgO-SiC NMs was enhanced. The electrical conductivity of PMMA/MgO-SiC (PNCs) increases as the frequency and ratio of MgO-SiC nanoparticles (NMs) increase. The PMMA/MgO-SiC (PNCs) were investigated for their potential use in pressure sensors. The results indicated that when the pressure rose, the dielectric properties of the PMMA/MgO-SiC PNCs also increased. In conclusion, the results regarding the structural, morphological, and dielectric characteristics have provided confirmation that the PMMA/MgO-SiC PNCs might potentially be advantageous in many applications such as sensors of pressure.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of total ionizing dose effect and degradation mechanism of a-IGZO TFT","authors":"Jian-Jian Wang,&nbsp;Gang-Ping Yan,&nbsp;Jin-Shun Bi,&nbsp;Sandip Majumdar,&nbsp;Yue Ma,&nbsp;Gao-Bo Xu","doi":"10.1007/s10854-025-14458-y","DOIUrl":"10.1007/s10854-025-14458-y","url":null,"abstract":"<div><p>The total ionizing dose (TID) effect of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) thin film transistors (TFT) was investigated in four bias modes. The degradation mechanism induced by TID in various bias modes was analyzed using technology computer-aided design (TCAD) tools. The findings revealed that, in the negative bias mode, the strongest electric field affects the probability of holes in the SiO₂ passivation layer and SiO₂ buffer layer being trapped by interface traps, while also increasing the radiation charge generation rate. Consequently, this led to the most significant degradation in device performance. To alleviate the impact of TID effect on the performance of back-gated a-IGZO TFT, it is necessary to appropriately reduce the thickness of SiO₂ buffer layer and consider alternative passivation layer materials. This will decrease the volume of electron–hole pairs in the dielectric layer under irradiation and minimize the likelihood of the trapping by interface traps. These results lay the groundwork for promoting the application of a-IGZO TFT in space radiation environments.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of dental ceramic coating on thermal, mechanical, and dielectric properties of glass fiber-reinforced wave transparent composite","authors":"Muhammad Qasim,&nbsp;Muhammad Talha Shabbir,&nbsp;Tayyab Hussain,&nbsp;Imran Haider,&nbsp;Muhammad Hassan,&nbsp;Mustafa Anwar","doi":"10.1007/s10854-025-14388-9","DOIUrl":"10.1007/s10854-025-14388-9","url":null,"abstract":"<div><p>Wave transparent composites are crucial in telecommunication systems for protecting against external environmental conditions while ensuring signal transmittance. However, prolonged exposure to harsh environments, particularly UV radiation, moisture, and temperature fluctuations can compromise their durability and performance. This study explores the application of flowable dental ceramic, primarily composed of carbon, silicon, aluminum, oxygen, and potassium, as a protective coating for glass fiber-reinforced epoxy composites to enhance their lifespan. The ceramic-coated substrate, cured at 150 °C, exhibited a 32.34% increase in flexural strength and a 51.85% increase in tensile strength compared to uncoated samples. SEM analysis revealed a uniform distribution, smooth surface, and a well-integrated coating layer. TGA analysis demonstrated that the composite remained thermally stable up to 220 °C, indicating enhanced thermal stability. UV–Vis spectroscopy confirmed that the coating material acts as a barrier, providing effective resistance against UV–Vis degradation. Microwave analysis demonstrated a 23.54% reduction in dielectric constant and an 80% decrease in loss tangent, ensuring maintained radio wave transparency and precise signal transmission. These improvements highlight the ceramic coating's ability to significantly enhance mechanical strength, thermal stability, and signal transmission capabilities, offering a promising solution for extending the durability and performance of wave transparent composites in harsh environments.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fine-tuning piezoelectric potential enhances self-powered quartz/ZnO microsystem for photocatalytic H2O2 production","authors":"Xiaojing Liu,&nbsp;Xinyu Liao,&nbsp;Xiangyi Wang,&nbsp;Yi Zhang,&nbsp;Ning Zhang","doi":"10.1007/s10854-025-14444-4","DOIUrl":"10.1007/s10854-025-14444-4","url":null,"abstract":"<div><p>With the growing global demand for hydrogen peroxide (H₂O₂), the traditional anthraquinone process faces challenges of high energy consumption and environmental pollution, making photocatalytic technology a promising green and sustainable alternative. However, the efficiency of photocatalysis is often limited by the recombination of photogenerated electron–hole pairs. In this study, a piezoelectric effect was introduced to enhance photocatalytic H₂O₂ synthesis by designing ZnO-based nanocomposite catalysts supported on quartz. The piezoelectric effect, triggered by ultrasonic excitation, promoted electron–hole separation, thereby improving photocatalytic efficiency. The structural characteristics of the materials were analyzed using XRD, SEM, and PFM techniques, while their photoelectrochemical performance and H₂O₂ production were evaluated through electrochemical tests. Results showed that the ZQ-P25 catalyst, with a particle size of 25 μm, achieved an H₂O₂ generation rate of 1.72 mmol g⁻¹ h⁻¹ under combined light and ultrasonic conditions, significantly outperforming smaller particle-sized catalysts. This study elucidates the enhancement mechanism of the piezoelectric effect in photocatalysis, providing new insights into the design of the photocatalyst materials and advancing the green production of H₂O₂.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing AZO thin films for optoelectronics: the impact of substrate temperature and vacuum annealing","authors":"Hyeong Gi Park,&nbsp;Jaehyun Cho,&nbsp;Junsin Yi","doi":"10.1007/s10854-025-14450-6","DOIUrl":"10.1007/s10854-025-14450-6","url":null,"abstract":"<div><p>Aluminum-doped zinc oxide (AZO) thin films, a promising candidate for advanced optoelectronic applications, were deposited using a direct-current (DC) magnetron sputtering system at various substrate temperatures. This study systematically investigates the impact of deposition temperature and post-deposition annealing on the structural, electrical, optical, and chemical properties of AZO thin films. Films deposited at mid-temperature (MT, 160 °C) exhibited superior electrical performance, including high carrier mobility (21.35 cm²/Vs) and low resistivity, compared to films deposited at low and high temperatures. Post-deposition annealing at 300 °C for 30 min under vacuum further enhanced the conductivity by significantly increasing the carrier concentration, as confirmed by photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), which revealed the role of oxygen vacancies (V_O) and zinc-related defects (O_Zn) in the conduction band. To optimize light-trapping properties, AZO thin films were etched using 0.5% hydrochloric acid (HCl) for 35 s, achieving a haze ratio of 36% and a sheet resistance of 10 Ω/sq. These optimized films were integrated into a-Si:H/μc-Si:H tandem solar cells, resulting in a short-circuit current density (J_SC) of 13.66 mA/cm² and an efficiency (η) of 13.52%. These findings highlight the importance of controlling deposition and annealing conditions to optimize the performance of AZO thin films, paving the way for their integration into next-generation photovoltaic and optoelectronic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance of soft magnetic cores based on the mixture of carbonyl iron and amorphous powders","authors":"Han Yuan,&nbsp;Xiangyi Liu,&nbsp;Hongya Yu,&nbsp;Jianmin Yang,&nbsp;Zhongwu Liu","doi":"10.1007/s10854-025-14477-9","DOIUrl":"10.1007/s10854-025-14477-9","url":null,"abstract":"<div><p>The mixture of carbonyl iron powders (CIP) with small particle size and amorphous powders (AP) with large particle size were employed for fabricating high performance soft magnetic cores. The extended discrete element method simulation (EDEM) showed that as the proportion of AP increases from 0 to 100 wt.%, the porosity of the core first decreases and then increases, reaching its lowest value at 70 wt.% AP. The micromagnetic simulations suggested that the enhanced static magnetic force between the powders with different sizes can promote the magnetic domain wall displacement. Experimental results confirmed that the highest compactness and lowest core loss of 408 kW/m³ at 50 mT and 100 kHz have been obtained at 70 wt.% AP, agreeing well with the simulation results. The permeability of the core increases with the AP content up to 30 wt.%, then decreases. The quality factor at 1 MHz monotonically decreases from 69.9 to 52.2 as the AP content increases. The core with 20 wt.% AP exhibits the highest crush strength due to the improved meshing ability between magnetic powders by densification. However, the addition of AP has negative effect on the DC bias performance, which needs further investigation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic studies on stilbazolium derivative crystal with a 4-ethylbenzaldehyde donor group for nonlinear optical systems","authors":"L. Poornima,&nbsp;Ravi Shanker Babu,&nbsp;S. Kalainathan","doi":"10.1007/s10854-025-14416-8","DOIUrl":"10.1007/s10854-025-14416-8","url":null,"abstract":"<div><p>Materials with favorable nonlinear optical properties receive more attention in advanced optical technology. This study aims to design, synthesize, and characterize a novel single crystal with exceptional third-order nonlinear optical (NLO) properties. Utilizing the solvent evaporation method a single crystal of 1-methyl-2[2-(4-ethylphenyl)vinyl]pyridinium iodide (EMPI) was obtained with high crystallinity. The crystal structure of the EMPI was determined through Single Crystal X-ray diffraction (SCXRD), confirming its atomic arrangement and its purity was verified using the CHN elemental analysis. Nuclear Magnetic Resonance (NMR) and Fourier Transform Infrared (FT-IR) spectroscopy confirmed the molecular composition (C₁₆H₁₈) and functional groups of the EMPI. Hirshfeld surface analysis was employed to elucidate the intermolecular interactions in the EMPI crystal. The optical characteristics of the EMPI crystal were evaluated through the UV-Vis-NIR spectroscopy and Photoluminescence (PL) analysis, revealing its remarkable 80% transparency in the visible range and suitability for green light-emitting diodes. AFM and etching analysis affirmed that EMPI crystal has a smooth surface with fewer dislocations. The Z-Scan analysis demonstrates the third-order nonlinear optical performance and the optical limiting capabilities of the EMPI crystal, highlighting its potential as a key material for advancing optoelectronic devices and optical protection systems.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Large ferroelectric response in randomly a-axis orientated CaBi2Nb2O9 thin films by pulsed laser deposition","authors":"Guanyuan Ren,&nbsp;Jianing Wang,&nbsp;Donghai Ding,&nbsp;Ruihong Liang,&nbsp;Zhiyong Zhou","doi":"10.1007/s10854-025-14405-x","DOIUrl":"10.1007/s10854-025-14405-x","url":null,"abstract":"<div><p>CaBi₂Nb₂O₉-based (CBN-based) ferroelectric random access memory (FeRAM) has emerged as a promising candidate in the domain of data storage. Nevertheless, a comprehensive investigation into the enhancement of ferroelectric performance and the orientational configuration of FeRAM remains an area that has not been fully explored. Here, the CaBi₂Nb₂O₉/SrRuO₃/MgO (CBN/SRO/MgO) stack deposited at 750 °C shows a superior remanent polarization (<i>P</i>_r) of 18.43 μC/cm² under only coercive field (<i>E</i>_c) of 192 kV/cm. The enhancement of ferroelectric properties can be attributed to the improved crystallinity and the increased random orientational distribution, particularly the deviation from the <i>a</i>-axis orientation. The grain size and grain orientation distribution of the material have been quantitatively analyzed using electron backscatter diffraction (EBSD). It has been revealed that specific orientations with higher <i>P</i>_op values are pivotal in enhancing the polarization switching. A TEM image indicates that a layer-by-layer structure is formed of the stacked films. These findings demonstrate a novel route to designing CBN-based ferroelectric memory devices tailored for information storage and data processing, showcasing the potential for integration into advanced smart electronics of the forthcoming era.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced gC3N4/ZnCuFe2O4 composite photocatalysts for effective methylene blue degradation","authors":"Dilaver Yaşar,&nbsp;Mustafa Kavgacı,&nbsp;Hasan Eskalen,&nbsp;Hakan Yaykaşlı","doi":"10.1007/s10854-025-14367-0","DOIUrl":"10.1007/s10854-025-14367-0","url":null,"abstract":"<div><p>In this study, a gC₃N₄/Zn₀.₅Cu₀.₅Fe₂O₄ composite photocatalyst was synthesized to evaluate its efficacy in degrading methylene blue (MB) dye under visible light. The photocatalyst, prepared using mechanical milling techniques, demonstrated enhanced photocatalytic performance due to the synergistic effects of its components. The degradation efficiency for MB was measured at 95.41% with the 1g1ZCF composite (1:1 weight ratio of gC₃N₄ and Zn₀.₅Cu₀.₅Fe₂O₄) under Xenon lamp irradiation for 90 min. The corresponding reaction rate constant was calculated as 0.03174 min⁻¹, outperforming the pristine Zn₀.₅Cu₀.₅Fe₂O₄ and 2g1ZCF composites, which achieved degradation rates of 89.2% and 92.16%, respectively. The structural, morphological and optical properties of the synthesized samples were investigated by characterization techniques such as XRD, FESEM, FTIR and UV–Vis spectroscopy. XRD analyses revealed that the ZnCuFe₂O₄ nanoparticles exhibit a cubic spinel structure. FESEM investigations demonstrated that the gC₃N₄ nanosheets are uniformly coated with clustered ZnCuFe₂O₄ nanoparticles. The EDS spectra of the nanocomposites confirmed the presence of Zn, Cu, Fe, and O elements. Furthermore, an examination of colour tone changes indicated a noticeable reduction in the yellowness index of the samples upon the incorporation of gC₃N₄.The composites exhibited reduced bandgaps, with values of 1.92 eV for 1g1ZCF compared to 2.32 eV for pure Zn₀.₅Cu₀.₅Fe₂O₄. The material's recyclability was evaluated over five cycles, maintaining significant activity with a slight decrease attributed to catalyst loss. This work highlights the potential of gC₃N₄/Zn₀.₅Cu₀.₅Fe₂O₄ composites as efficient and recyclable photocatalysts for wastewater treatment applications, providing a promising solution to mitigate environmental pollution from dye contaminants.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14367-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143475280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}