Journal of Materials Science: Materials in Electronics最新文献

{"title":"Influence of potassium doping on the structural, optical, and optoelectrical properties of ZnS thin films for photovoltaic applications","authors":"Reim A. Almotiri","doi":"10.1007/s10854-025-14605-5","DOIUrl":"10.1007/s10854-025-14605-5","url":null,"abstract":"<div><p>Zinc sulfide (ZnS) is an important n-type semiconductor exhibiting remarkable electrical and optical properties. The present study used the nebulizer spray pyrolysis technique to produce undoped and potassium-doped ZnS thin films using an economical spray pyrolysis method at different potassium concentrations (2.5, 5, and 7.5 wt%). The XRD results indicate a hexagonal structure for ZnS and potassium-doped ZnS thin films. Examining the structural characteristics reveals that the crystallite size (<i>D</i>) of the ZnS and potassium-doped ZnS films was expanded as the potassium content was elevated from 2.5 to 7.5 wt%. The strain and dislocation density of the examined potassium-doped ZnS layers were diminished by augmenting the potassium concentration in the ZnS films. The linear optical parameters of the examined potassium-doped ZnS films were estimated by recording the reflectance and transmittance spectra in the wavelength 200–2500 nm. The refractive index values of the potassium-doped ZnS layers were enhanced by raising the potassium concentration in the studied samples. Moreover, the energy gap (<i>E</i>_<i>g</i>) calculations refer to the ZnS and potassium-doped ZnS films having direct optical transition, and the <i>E</i>_<i>g</i> values were reduced from 3.64 to 2.97 eV by the increase in the potassium concentration. The Wemple and DiDomenico model study shows that the dispersion energy and oscillator strength of the examined potassium-doped ZnS layers were boosted by raising the potassium concentration while the oscillator energy was dropped. The optoelectrical indices analysis displays the enhancement of the plasma frequency, optical mobility, optical carrier concentration, electrical conductivity, and optical dielectric constants while enlarging the potassium concentration. Meanwhile, the boost in potassium contents enhances the nonlinear absorption coefficient and nonlinear refractive index of the ZnS and potassium-doped ZnS films. The hot probe procedure refers to these samples as n-type semiconductors. The results indicated that these samples could be used as a new window layer for solar cells.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A co-precipitation route to produce BaTiO3 nanopowders with high tetragonality for ultra-thin MLCCs application","authors":"Saiwei Luan,&nbsp;Miao Tang,&nbsp;Hanze Mu,&nbsp;Jie Yu,&nbsp;Pengfei Wang,&nbsp;Lei Zhang","doi":"10.1007/s10854-025-14562-z","DOIUrl":"10.1007/s10854-025-14562-z","url":null,"abstract":"<div><p>Highly tetragonal BaTiO₃ nanopowder serves as a pivotal raw material for manufacturing high-performance miniaturized multilayer ceramic capacitors (MLCCs). In this study, barium acetate and tetrabutyl titanate were used as reactants, isopropanol served as the titanium source stabilizer and dispersant, and oxalic acid was employed as the precipitant to investigate the preparation process of tetragonal-phase BaTiO₃ nanopowder. The optimal process parameters were identified, and the reaction mechanism for synthesizing BaTiO₃ via oxalate co-precipitation was explored. The experimental results indicate that, with a Ba/Ti stoichiometric ratio of 1.000 and a solution pH of 2.33, following the appropriate sequence of experimental reagent additions, the precursor underwent a precipitation reaction at 25 °C. After calcination at 950 °C, BaTiO₃ powder with an average particle size of 56 nm and a tetragonality of 1.0075 was successfully synthesized. The BaTiO₃ ceramic sintered at 1250 °C exhibits a density of 96.5% and an exceptional dielectric performance, with a dielectric constant of 9369 at the Curie temperature (125 °C). This study provides valuable insights for addressing the complex hydrolysis and residual chloride ion issues associated with the chloride method.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of annealing temperature on magnetic properties of Fe-Si/BN soft magnetic composites with layered structure","authors":"Xi’an Fan,&nbsp;Qi Jin,&nbsp;Zhenjia Yang,&nbsp;Zhaoyang Wu,&nbsp;Jian Wang,&nbsp;Guangqiang Li,&nbsp;Zigui Luo","doi":"10.1007/s10854-025-14632-2","DOIUrl":"10.1007/s10854-025-14632-2","url":null,"abstract":"<div><p>Fe-Si/BN soft magnetic composites (SMCs) with layered structure were prepared with flaky Fe-Si/BN powders through low-speed ball milling, molding, and annealing. Effect of annealing temperature on the microstructure and magnetic properties of the layered Fe-Si/BN SMCs was studied. The results showed that structure of the Fe-Si/BN SMCs exhibited good thermal stability. When the annealing temperature increased from 500 to 800 °C, the density of the Fe-Si/BN SMCs gradually increased, leading to gradually decreased resistivity and increased dynamic loss. In addition, the increase in annealing temperature is beneficial for eliminating residual stresses within the Fe-Si/BN SMCs, resulting in decreased hysteresis loss and significantly improved effective permeability. Nevertheless, excessively high annealing temperature at 900 °C caused sintering and bonding between the flaky Fe-Si powders, which deteriorated the magnetic properties. The layered Fe-Si/BN SMCs annealed at 800 °C exhibited good magnetic properties, such as low magnetic loss (82.7 W/kg at 50 kHz and 0.05 T) and remarkably high effective permeability (143 at 100 kHz).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile preparation of aluminum nitride decorated cobalt-based MOF porous carbon for superior microwave absorption","authors":"Wenwen Xu,&nbsp;Sheng Wang,&nbsp;Wei Ma,&nbsp;WenGuang Lv,&nbsp;Xin Fu","doi":"10.1007/s10854-025-14585-6","DOIUrl":"10.1007/s10854-025-14585-6","url":null,"abstract":"<div><p>In response to the escalating demand for lightweight, broadband and high-efficiency microwave-absorbing materials driven by the rapid advancement of electronic information technology, this study proposes a novel solution involving the fabrication of aluminum nitride (AlN)-decorated cobalt carbide (CoC) nanocomposites via an oil-bath method. The incorporation of rigid and insulating AlN significantly enhances the thermal stability and microwave absorption (MA) performance of the AlN/CoC composites. Notably, in the 80 wt% AlN/paraffin composite system, a minimum reflection loss (RL_min) of − 43.2 dB and an effective absorption bandwidth of 1.76 GHz (13.92–15.68 GHz) were achieved, which is markedly superior to that of the CoC/paraffin composite under the same filling ratio (− 8.28 dB). The results indicate that the substantial enhancement in the MA properties of the AlN/CoC composites is primarily attributed to the influence of varying AlN contents on the dielectric loss, polarization loss, and impedance matching behavior of the material. This study provides new insights and methodologies for the development of lightweight, broadband, and high-efficiency microwave-absorbing materials. The design strategy of AlN/CoC composites holds great potential for widespread application in fields such as aerospace, electromagnetic shielding, and radar stealth.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and electrical properties of Al and Te co-doped BNT-BKT ceramics","authors":"Jinling Zeng,&nbsp;Zixuan Wang,&nbsp;Yingbang Yao","doi":"10.1007/s10854-025-14561-0","DOIUrl":"10.1007/s10854-025-14561-0","url":null,"abstract":"<div><p>0.8Bi_0.5Na_0.5TiO₃(BNT)–0.2Bi_0.5K_0.5TiO₃(BKT) ceramics co-doped with Al₂O₃ and TeO₂ (BNT-BKT-<i>x</i>AT) were prepared using conventional solid-state-reaction method. X-ray diffraction (XRD) analysis of samples with doping concentrations <i>x</i> ≤ 0.10 confirmed a pure perovskite phase, with relative densities over 95%. The sample with <i>x</i> = 0.05 exhibited better dielectric, ferroelectric and piezoelectric performances, i.e., a dielectric constant of 4900 at 1 kHz, a coercive electric field (<i>E</i>_<i>c</i>) of 42.8 kV/cm, remanent polarization (<i>P</i>_<i>r</i>) of 31.8 µC/cm², saturation polarization (<i>P</i>_<i>s</i>) of 45.8 µC/cm², and a piezoelectric coefficient (<i>d</i>₃₃) of 160 pC/N. Increasing the doping concentration resulted in a rise in the phase transition temperature. Moreover, at a higher doping level (<i>x</i> = 0.16), the samples exhibited semiconducting behavior, i.e., a temperature-dependent electrical resistivity. These findings indicate that such Al/Te co-doped BNT-BNT ceramics, particularly with <i>x</i> = 0.05 and <i>x</i> = 0.16, are promising candidates for piezoelectric and temperature sensing applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Cu2+ substitution on phase composition, microstructure, and microwave dielectric properties of Mg1−xCuxSiO3 ceramics","authors":"Xiang Ding,&nbsp;Tao Que,&nbsp;Xiang Guo,&nbsp;Fei Liu,&nbsp;Kai Huang,&nbsp;Hongqing Zhou","doi":"10.1007/s10854-025-14617-1","DOIUrl":"10.1007/s10854-025-14617-1","url":null,"abstract":"<div><p>Solid-state sintering method was used for the synthesis of Mg_1−xCu_xSiO₃ (x = 0–0.06) ceramics.The phase, microstructure and microwave dielectric properties of ceramics were studied.MgSiO₃ exists in polycrystalline form and is composed of orthorhombic MgSiO3 as the main phase, SiO₂ and monoclinic MgSiO₃ as the secondary phase. The existence of the secondary phase will deteriorate the sintering characteristics and dielectric properties. Appropriate Cu²⁺ substitution can effectively eliminate SiO₂ phase at relatively low temperature, and inhibit the formation of monoclinic MgSiO₃ phase. The substitution of Cu²⁺ improves the sintering properties of MgSiO₃ ceramic significantly, the maximum relative density increased from 92.3% at x = 0 to 96.58% at x = 0.02, and the sintering temperature decreased by 50℃. With the increase of Cu²⁺ content, the lattice parameters also increase. Dielectric constant is mainly affected by density and intrinsic polarizability, and <i>Q</i> × <i>f</i> is influenced by the microstructure, density and secondary phase content. When the x content increases from 0 to 0.02, the <i>Q</i> × <i>f</i> value of Mg_1−xCu_xSiO₃ increases from 27,378 GHz to 87,283 GHz. The resonant frequency temperature coefficient of the ceramic is also corrected. For x = 0.02 composition (Mg_0.98Cu_0.02SiO₃) sintered at 1420℃ for 3 h, good dielectric properties were obtained at 13.565 GHz:( <i>ε</i>_<i>r</i> = 6.58, <i>Q</i> × <i>f</i> = 87,283 GHz and <i>τ</i>_<i>f</i> =  − 11.8 ppm/°C). Due to its low dielectric constant and excellent quality factor, it is very suitable for high-frequency communication applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of high-performance Cu nanoparticle paste and low-temperature sintering for Cu–Cu bonding","authors":"Jiaqiang Huang,&nbsp;Zhiling Ning,&nbsp;Caiping Yu,&nbsp;Dongjing Liu,&nbsp;Yujie Liu,&nbsp;Dawei Xiao","doi":"10.1007/s10854-025-14586-5","DOIUrl":"10.1007/s10854-025-14586-5","url":null,"abstract":"<div><p>The sintering technology of Cu nanoparticle paste has significant potential for application in wide bandgap semiconductor devices. In this study, a high-performance and multi-scale Cu nanoparticle paste is proposed to solve the critical issues of easy oxidation during preparation and storage, as well as high sintering temperature. The multi-scale Cu nanoparticles with sizes ranging from 20 to 140 nm were synthesized simply and efficiently using a liquid-phase reduction method. These nanoparticles were subsequently mixed with a reducing composite solvent to develop a Cu nanoparticle paste. Based on this paste, pressure-assisted Cu–Cu bonding experiments were conducted at various temperatures and durations. The Cu–Cu joints achieve an average shear strength of 33.3 MPa after sintering at 240 °C in a nitrogen atmosphere and even exceed 60 MPa when the temperature is raised to 280 ℃. Additionally, with a reductive surface coating, the multi-scale Cu nanoparticles can be stored for over 20 days under ambient air condition. Besides, the enhanced bonding strength and dense microstructure are attributed to the close-packing effect of multi-scale nanoparticles and the facilitation of small size nanoparticles. The proposed multi-scale Cu nanoparticle paste exhibits excellent oxidation resistance and low-temperature sintering performance, which demonstrates significant potential for application in power device packaging and interconnection.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploration of structural and photophysical attributes of orange light emitting Sm(III) complexes with β-diketone antenna for advanced optoelectronic prospects","authors":"Nishita Dua,&nbsp;Priti Boora Doon","doi":"10.1007/s10854-025-14614-4","DOIUrl":"10.1007/s10854-025-14614-4","url":null,"abstract":"<div><p>In the present investigation, five orange light emanating samarium complexes were synthesized utilizing β-diketone (3-benzylidene-2,4-pentanedione) as primary ligand and 5,6-dimethyl-1,10-phenanthroline, bathophenanthroline, 4,4'-dimethyl-2,2'-bipyridyl, and 1,10-phenanthroline as ancillary ligand. The structural and optical attributes of the samarium complexes were determined by FT-IR, elemental analysis, UV–visible absorbance, proton NMR, and photoluminescence spectroscopy. The outcomes of spectroscopic studies proposed the bonding of main ligand and ancillary ligands with Sm (III) ion through oxygen donor site and nitrogen donor site, respectively. Upon UV excitation, the emission profile depicts peaks at 566, 600, and 650 nm accredited to ⁴G_5/2 → ⁶H_J (J = 5/2, 7/2,9/2) characteristic transitions of samarium ion. The results of thermal studies indicated the usefulness of these samarium complexes in display devices. The value of E_g within 2.60–2.99 eV proclaimed their applicability in semiconductors. Photometric parameters like CIE chromaticity coordinates, color purity (78.90–84.50%), and correlated color temperature values (&lt; 3200 K) revealed the prospective use of samarium complexes as warm orange source of light.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of energy storage properties of BNBT ceramics modified by tungsten bronze-structured Sr5LaTi3Ta7O30","authors":"Wanying Cai,&nbsp;Jiwen Xu,&nbsp;Ling Yang,&nbsp;Fei Shang,&nbsp;Changrong Zhou,&nbsp;Huarui Xu","doi":"10.1007/s10854-025-14578-5","DOIUrl":"10.1007/s10854-025-14578-5","url":null,"abstract":"<div><p>Ceramics as the dielectric layer of capacitors are the key materials for obtaining high-performance capacitors. Composite materials are an important method for modifying ceramics. The tungsten bronze-structured Sr₅LaTi₃Ta₇O₃₀ (SLTT)-doped 0.93Bi_0.5Na_0.5TiO₃-0.07BaTiO₃ (BNBT) perovskite ceramics were proposed. The phase transition of the composite ceramics from ferroelectric to relaxor ferroelectric was achieved at room temperature. An excellent efficiency of 94.04% was obtained at 0.2 mol SLTT and 100 kV/cm. An excellent recoverable energy storage density of 1.21 J/cm³ was obtained at 0.11 mol SLTT and 100 kV/cm. Therefore, the composite ceramics constructed by perovskite and tungsten bronze phases have great application prospects in the field of high-power pulse capacitors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Probing the structural, optical absorption, dielectric and impedance properties of Sr-modified BaMnO3 ceramics","authors":"Itishree Nayak,&nbsp;Satyajeet Jena,&nbsp;Debadhyan Behera,&nbsp;Dilip Kumar Mishra","doi":"10.1007/s10854-025-14596-3","DOIUrl":"10.1007/s10854-025-14596-3","url":null,"abstract":"<div><p>This work probes the structural, optical and temperature-dependent dielectric properties of BaMnO₃ and Ba_0.9Sr_0.1MnO₃multiferroic ceramics prepared by conventional solid state reaction technique. XRD analysis indicates rhombohedral perovskite structure of BaMnO₃. When 10 wt.% Sr is added in the BaMnO₃ matrix against Ba, the rhombohedral structure transforms into hexagonal perovskite structure. The average crystallite size of BaMnO₃ and Ba_0.9Sr_0.1MnO₃were found to be ~ 92 nm and ~ 63 nm, respectively. The lattice parameter and the unit cell volume also decrease with the addition of Sr in pure BaMnO₃. Through EDX analysis, the presence of all the constituents in the final samples are verified. The optical band gap of BaMnO₃ decreases from 2.33 eV to 1.75 eV, primarily attributed to SrMnO₃ phase and grain boundary effects. A much higher value of dielectric constant i.e. ~ 19,800 at 200 °C with respect to 10 Hz frequency has been achieved with 10 wt.% strontium doping in BaMnO₃, which may boost the efficiency of electronic devices made up of dielectric materials. The impedance analysis confirms the <b>negative temperature coefficient of resistance</b> (NTCR) behaviour of the sample and semicircular arc Nyquist plot supports the semiconducting nature with non-Debye type of relaxation mechanism in both the samples.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}