Ahmed M. Nawar, S. F. Mansour, S. Mosaad, Ahmed H. Ibrahim
{"title":"Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr2O3-doped PMMA/Ag systems for memory technology applications","authors":"Ahmed M. Nawar, S. F. Mansour, S. Mosaad, Ahmed H. Ibrahim","doi":"10.1007/s10854-025-14354-5","DOIUrl":"10.1007/s10854-025-14354-5","url":null,"abstract":"<div><p>Herein, chromium oxide (Cr<sub>2</sub>O<sub>3</sub>) was fabricated in nanopowder form, and Cr<sub>2</sub>O<sub>3</sub>-doped PMMA nanocomposite thin films were fabricated using the spin-coating technique (0.001 to 10 wt%). X-ray diffraction confirmed Cr<sub>2</sub>O<sub>3</sub> powder is nanostructured, crystallizing in the trigonal R-3c space group with lattice parameters a = 4.9541 Å and c = 13.5882 Å, determined via Rietveld refinement. The Cr<sub>2</sub>O<sub>3</sub>-doped PMMA nanocomposite thin films exhibit an amorphous structure. The Williamson-Hall plots were utilized to estimate the average crystallite size and lattice strain of the refined XRD patterns and are equal to 14.12 ± 0.03 nm and 3×10<sup>-3</sup>, respectively. XPS and FESEM investigated the fabricated samples' molecular structure and morphological properties. The estimated energy gap, <span>({text{E}}_{text{g}}^{text{Op}})</span> of the fabricated Cr<sub>2</sub>O<sub>3</sub>-doped PMMA thin films varied from 3.629 ± 0.005 eV to 3.761 ± 0.004 eV with indirect transition and depended on the doping ratio. Cauchy, Sellmeier, and Forouhi-Bloomer mathematical models were used to parameterize the refractive index of the thin films of the Cr<sub>2</sub>O<sub>3</sub>-doped PMMA nanocomposite in the non-absorbing region. The intensity of the measured transmission, T%, through the fabricated ITO/Cr<sub>2</sub>O<sub>3</sub>-doped PMMA/ITO devices depends on the applied electric field, which is parallel to the direction of incident probe electromagnetic waves (450-1100 nm). The fabricated ITO/Cr<sub>2</sub>O<sub>3</sub>-doped PMMA/Ag Schottky devices elucidate (I-V) hysteresis loop at room temperature. The analyzed conduction mechanism in the forward biasing region for all devices showed a large self-electrical switching ratio equal to 108 at 2.1 Volts with a large memory window area.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A comprehensive and in-depth study of pressureless and low-temperature in-air sintering performance of bimodal-sized Cu nanoparticle pastes for die attachment and the joint strengthening mechanism","authors":"B. Hou, M. B. Zhou, X. P. Zhang","doi":"10.1007/s10854-025-14323-y","DOIUrl":"10.1007/s10854-025-14323-y","url":null,"abstract":"<div><p>Recent years have seen the rapid development of third-generation semiconductors, which has driven the demand for high-performance, low-cost die-attachment materials. As a continuation of a series of exploratory research on preparation of Cu particles and Cu pastes as well as their sinterability as die-attachment materials performed by the authors, this paper presents systematic studies on utilizing an efficient method for preparing bimodal-sized Cu nanoparticles (NPs) and corresponding Cu NP pastes formulated with four types of reducing solvents, and characterizing the air-sintering performance of the Cu pastes subjected to varying process parameters of sintering pressure, temperature and time. Taguchi method analysis shows the shear strength of joints is most influenced by sintering pressure, followed by solvent composition, temperature and time. The novel Cu paste composed of bimodal-sized NPs and glycerol exhibits excellent antioxidant properties, enabling pressureless in-air sintering and bonding. Increase in sintering pressure, temperature and time brings about significantly reduced porosity in the sintered Cu matrix and greatly enhanced shear strength of the joints. After pressureless sintering in air at 280 °C for 10 min, the porosity is 24.3% and shear strength reaches 22.3 MPa; comparatively, increasing pressure to 5 MPa leads to porosity decreasing to 4.1% and strength rising to 70.1 MPa. Increasing pressure and temperature, and prolonging sintering time promote Cu bulk growth and atomic diffusion, thus strengthening the matrix and forming robust interfaces. The above results indicate the great potential of the bimodal-sized Cu NP paste for die attachment in high-power electronic devices under mild sintering conditions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rohit Mondal, G. Hema Chandra, Y. P. Venkata Subbaiah, Mukul Gupta
{"title":"Impact of selenium content on the growth kinetics and optoelectronic properties of Ag-substituted Cu2ZnSnSe4 thin films","authors":"Rohit Mondal, G. Hema Chandra, Y. P. Venkata Subbaiah, Mukul Gupta","doi":"10.1007/s10854-025-14381-2","DOIUrl":"10.1007/s10854-025-14381-2","url":null,"abstract":"<div><p>Silver-substituted Cu<sub>2</sub>ZnSnSe<sub>4</sub> has been studied experimentally and theoretically as one of the most promising intermediate band photoabsorbers for thin-film solar cells. Selenization of stacked precursors is an established procedure for synthesizing (Cu,Ag)<sub>2</sub>ZnSnSe<sub>4</sub> (CAZTSe) thin films. Various process parameters during selenization have been widely researched; however, the availability of selenium quantity during selenization has limited reports and plays a vital role in controlling the film's composition and properties. This study aims to investigate the effect of selenium quantity (100 – 500 mg) during the pre-annealing at 275 °C for 30 min and selenization at 450 °C for 2 min on the structural, morphological, optical, and electrical properties of CAZTSe films. X-ray diffraction (XRD) analysis confirmed a single-phase kesterite structure for films with lower selenium content (≤ 300 mg), while higher selenium content (> 300 mg) led to the formation of secondary SnSe₂ phases. Raman spectroscopy further confirmed the formation of CAZTSe films. Field emission scanning electron microscopy (FESEM) indicated that grain size increased with selenium content, though excessive selenium availability led to surface deterioration. Optical analysis revealed a bandgap increase from 0.99 to 1.12 eV, attributed to the changes in band edges. Electrical measurements showed consistent <i>p</i>-type conductivity, and significant changes in carrier concentration, mobility, and resistivity with increasing selenium content. Therefore, managing appropriate selenium quantity during selenization is crucial for optimizing the process and producing high-quality absorber layers suitable for efficient solar cells.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Tensile stress on giant stress-impedance effect of stress-current-annealed FeCoSiBCuNb amorphous ribbons","authors":"Yanxing Xing, Shaoxiong Zhou, Bangshao Dong, Qian Zhang, Zheng Chen, Yong Gan","doi":"10.1007/s10854-025-14335-8","DOIUrl":"10.1007/s10854-025-14335-8","url":null,"abstract":"<div><p>The stress-impedance (SI) effect of stress-current-annealed FeCoSiBCuNb amorphous thin ribbons was measured in the presence of longitudinal applied tensile stress. Stress value of <i>σ</i>-(△<i>Z</i>/<i>Z</i>)<sub>max</sub> up to 245 MPa corresponding to peak GSI ratio (△<i>Z</i>/<i>Z</i>)<sub>max</sub> of 109% at 8 MHz was obtained, which may be the maximum stress value reported in our knowledge. Furthermore, controllable stress values corresponding to the peak GSI ratio were obtained, which is related to the pre-applied tensile stress while annealing. Through the observation of phase structure and magnetic domain structure, it is found that larger value of <i>σ</i>-(△<i>Z</i>/<i>Z</i>)<sub>max</sub> corresponds to higher transverse component of the magnetic domain. The magnetic anisotropy field due to the residual stress and magnetoelastic energy of the annealed ribbon may be responsible for the variation of <i>σ</i>-(△<i>Z</i>/<i>Z</i>)<sub>max</sub>. These results have reference value to the potential use of the stress-impedance effect in the design of stress sensors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Sensitive electrochemical sensor using Zn doped Fe3O4 nanosheets/MWCNTs for simultaneous detection of dopamine and tramadol","authors":"Rahem Nouraei, Ali Babaei","doi":"10.1007/s10854-025-14287-z","DOIUrl":"10.1007/s10854-025-14287-z","url":null,"abstract":"<div><p>In this study, a novel electrochemical sensor for the simultaneous trace measurement of dopamine (DA) and tramadol (TR) was created using a glassy carbon electrode modified with multi-walled carbon nanotubes (MWCNTs) and Zn-doped magnetite Fe<sub>3</sub>O<sub>4</sub> nanosheets (Zn–Fe<sub>3</sub>O<sub>4</sub>NS/MWCNTs/GCE). The Fe<sub>3</sub>O<sub>4</sub> nanosheets doped with Zn<sup>2+</sup> were synthesized using the hydrothermal method. Different voltammetric techniques such as cyclic voltammetry (CV), linear sweep voltammetry (LSV), and chronoamperometry (CA) were used to investigate the electrochemical behavior of DA and TR. The results demonstrated that the Zn–Fe<sub>3</sub>O<sub>4</sub>NS/MWCNTs composite exhibited outstanding electro-catalytic activity for the simultaneous measurement of DA and TR. The experimental parameters like buffer type, aggregation time, and PH were optimized. Two linear dynamic ranges were displayed by the sensor under the ideal experimental conditions: 0.05–3 µmol/L and 10–350 µmol/L with a detection limit of 26 nM and 0.05–3 µmol/L and 10–450 µmol/L with a detection limit of 20 nM for DA and TR, respectively. The suggested sensor's suitability for simultaneous investigation of DA and TR in actual samples with considerable recovery was tested using urine and serum samples. The suggested sensor demonstrated commendable stability, strong repeatability, high selectivity, and great sensitivity for determining DA and TR.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143379813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. M. Fayzan Shakir, Asra Tariq, Ayesha Afzal, Iqra Abdul Rashid
{"title":"Correction to: Mechanical, thermal and EMI shielding study of electrically conductive polymeric hybrid nano‑composites","authors":"H. M. Fayzan Shakir, Asra Tariq, Ayesha Afzal, Iqra Abdul Rashid","doi":"10.1007/s10854-025-14361-6","DOIUrl":"10.1007/s10854-025-14361-6","url":null,"abstract":"","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The CuS/SnS2 heterojunction with enhanced photo-assisted energy storage performances","authors":"Huifang Hao, Sheng Lai, Jiangfeng Song, Jiachen Liang","doi":"10.1007/s10854-025-14297-x","DOIUrl":"10.1007/s10854-025-14297-x","url":null,"abstract":"<div><p>As a novel energy storage system, the combination of Pseudo-capacitance materials with photosensitive semiconductors to construct heterojunctions is regarded as a promising strategy for constructing advanced supercapacitors. For the design of composite materials, how to use heterojunctions to simultaneously achieve high capacitance and excellent photoreaction activity is of great significance. Although SnS<sub>2</sub> is a material that possesses two advantages simultaneously, there is no report on its enhancement behavior of photo-assisted capacitance, for the easy recombination with photogenerated charge carriers. Herein, a CuS/SnS<sub>2</sub> composite material supported on carbon cloth (CuS/SnS<sub>2</sub>@CC) was fabricated using a two-step hydrothermal method and tested as a binder-free photo-electrode for photo-assisted electrochemical charge storage applications. The results showed that the construction of a CuS/SnS<sub>2</sub> p–n-type heterojunction greatly reduced the recombination efficiency of photogenerated electrons and holes. Consequently, the photo-assisted charging capacity of the electrode increased by 17.4%. The electrode also displayed a superior specific capacitance of 1043 mF cm<sup>−2</sup> at a current density of 0.5 mA cm<sup>−2</sup> in the dark and increased to 1155 mF cm<sup>−2</sup> under visible light illumination. Additionally, the electrode maintained a capacitance retention rate of 79.81% even at a high current density of 3 mA cm<sup>−2</sup>. Meanwhile, the charge storage mechanism and band structure of CuS/SnS<sub>2</sub> were studied and discussed in detail. The proposed mechanism can also be expanded to other metal sulfide materials for better solar energy conversion and storage.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14297-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High performance of air plasma-exposed MgCo2O4 electrode material for rechargeable Mg batteries and supercapacitors","authors":"Judith Fennila T, K. A. Vijayalakshmi","doi":"10.1007/s10854-025-14308-x","DOIUrl":"10.1007/s10854-025-14308-x","url":null,"abstract":"<div><p>Rechargeable magnesium batteries are attracting attention due to their high energy density, affordability, and the availability of magnesium. Among potential cathode materials, magnesium cobalt oxide (MgCo<sub>2</sub>O<sub>4</sub>) stands out for its promise and cost-effectiveness. This study enhances the electrochemical performance of MgCo<sub>2</sub>O<sub>4</sub> nanoparticles by employing DC glow discharge plasma treatment. MgCo2O4 was synthesized using a hydrothermal process and then exposed to plasma, which altered the surface layers of the nanoparticles, improving properties such as wettability, adhesion, and surface area. Structural, morphological, and electrochemical studies revealed that the plasma-treated MgCo<sub>2</sub>O<sub>4</sub> achieved a specific capacitance of 989 F/g at 0.3 mA/g and maintained a capacitive retention of around 90% over 3000 cycles, outperforming untreated MgCo<sub>2</sub>O<sub>4</sub>. These results highlight that the plasma treatment significantly enhances the electrochemical properties of MgCo<sub>2</sub>O<sub>4</sub>, making it a highly suitable material for energy storage applications in rechargeable magnesium batteries.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chetan, N. Vijayan, Kiran, Jyoti, Divyansh Joshi, M. Kavimani, V. Balachandran
{"title":"Study on benzimidazole single crystal: mechanical, optical, thermal characteristics and theoretical analyses for optoelectronic applications","authors":"Chetan, N. Vijayan, Kiran, Jyoti, Divyansh Joshi, M. Kavimani, V. Balachandran","doi":"10.1007/s10854-025-14337-6","DOIUrl":"10.1007/s10854-025-14337-6","url":null,"abstract":"<div><p>This work focuses on growth of benzimidazole (BMZ) crystal using slow evaporation solution growth technique (SEST) and its characteristics are studied by analysing its optical, thermal and topological parameters. The structural parameters were determined from powder X-ray diffraction (PXRD) analysis. Mechanical properties of BMZ crystal were analysed by Vickers microhardness tester. Meyer index (n) for the material was determine as 2.28 showing that it is soft category material. UV–Visible spectroscopy was adopted to know the optical behaviour of the grown crystal. UV–Visible spectroscopy shows that the grown BMZ crystal has cutoff wavelength of 310 nm and energy bandgap of 4.1 eV. Thermal properties of BMZ were investigated by thermogravimetric (TG/DTA) analysis which shows that the grown crystal is thermally stable upto 165 °C and has melting point of 170 °C. The cluster’s optimized characteristics, Mulliken atomic charge, frontier molecular orbital, and molecular electrostatic potential were estimated through DFT (density functional theory) method. The work utilized topological analysis techniques, ELF (electron localization function), NCI (non-covalent interaction) and LOL (localized orbital locator) to investigate the intermolecular interactions in benzimidazole.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhanced electromagnetic wave absorption through MoO3 surface electromagnetic composites","authors":"Jianshuo Zheng, Chenyue Wang, Pengli Lei, Liangyong Ni, Jianhao Zhang, Wei Dong","doi":"10.1007/s10854-024-14168-x","DOIUrl":"10.1007/s10854-024-14168-x","url":null,"abstract":"<div><p>MoO<sub>3</sub> is a typical transition metal oxide, which is widely used in many fields owing to its unique physicochemical properties. Current studies have shown that Carbon (C) or metallic compounds (M) can enhance its absorption properties. In this study, we employed interface engineering methods and utilized a core–shell encapsulation structure to investigate the superior electromagnetic wave absorption performance of molybdenum oxide double-layer composite materials under different coating sequences. o-MoO<sub>3</sub>/M/C (external PPy internal metal ions, ratio 1:1) and o-MoO<sub>3</sub>/C/M (external metal ions internal PPy, ratio 1:1) were synthesized by hydrothermal synthesis and pyrolysis. By comparing the absorption results of the two samples, o-MoO<sub>3</sub>/M/C is significantly better than o-MoO<sub>3</sub>/C/M. The widest absorption bandwidth is 5.28 GHz when the material (o-MoO<sub>3</sub>/M/C) thickness is 6.6 mm, with a minimum reflection loss (RL<sub>min</sub>) of − 20.42 dB when the material thickness is 5.7 mm.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143379811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}