Journal of Materials Science: Materials in Electronics最新文献_第3页

Novel red-emitting phosphor Na3LaW3O12: Sm3+, Eu3+: synthesis, luminescent properties, anti-thermal quenching and LED packaging 新型红发荧光粉Na3LaW3O12: Sm3+、Eu3+的合成、发光性能、抗热猝灭及LED封装

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14948-z

Mingming Li, Feibing Xiong, Weibin Yang, Jing Li, Zhengkai Hu, Xin Bai, Yaqing Lin, Junxiong Huang, Qinqin Zhuang, Zaijun Cheng

{"title":"Novel red-emitting phosphor Na3LaW3O12: Sm3+, Eu3+: synthesis, luminescent properties, anti-thermal quenching and LED packaging","authors":"Mingming Li, Feibing Xiong, Weibin Yang, Jing Li, Zhengkai Hu, Xin Bai, Yaqing Lin, Junxiong Huang, Qinqin Zhuang, Zaijun Cheng","doi":"10.1007/s10854-025-14948-z","DOIUrl":"10.1007/s10854-025-14948-z","url":null,"abstract":"<div>A series of novel red-emitting Na3LaW3O12: xSm3+ (x = 0–0.1) and Na3LaW3O12: 0.06Sm3+, yEu3+ (y = 0.09–0.27) phosphors have been synthesized through a high-temperature solid-state method. The phase structure, luminescent properties, and thermal stability of these materials were analyzed by the X-ray diffraction, scanning electron microcopy, luminescence spectra, luminescence decay curves, and temperature-dependent spectra. The Na3LaW3O12: Sm3+, Eu3+ phosphor show an abnormal thermal stability property, and the luminescence intensity of Na3LaW3O12: 0.06Sm3+, 0.21Eu3+ at 453 K remains about 97% of the original value at room temperature. Based on the as-synthesized Na3LaW3O12: 0.06Sm3+, 0.21Eu3+ phosphors as red component, a white LED with 2653 K correlated color temperature and Ra = 85.0 color rendering index has been fabricated using a 465 nm blue chip, and LuAG: Ce3+ yellowish-green phosphor. The results indicated that the as-synthesized Na3LaW3O12: Sm3+, Eu3+ phosphor may be applied in white LEDs as potential abnormal thermal quenching red-emitting material.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced luminescence efficiency and moisture stability in Mn4+-activated K2TaF7 red phosphors for warm WLEDs 增强了Mn4+活化K2TaF7红色荧光粉的发光效率和水分稳定性

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14955-0

Linglin Wang, Shuangyan Pi, Siyu Liu, Lei Feng, Jun Zhen, Xiaochun Wu, Xin Lai, Daojiang Gao, Ting Zhou

{"title":"Enhanced luminescence efficiency and moisture stability in Mn4+-activated K2TaF7 red phosphors for warm WLEDs","authors":"Linglin Wang, Shuangyan Pi, Siyu Liu, Lei Feng, Jun Zhen, Xiaochun Wu, Xin Lai, Daojiang Gao, Ting Zhou","doi":"10.1007/s10854-025-14955-0","DOIUrl":"10.1007/s10854-025-14955-0","url":null,"abstract":"<div>Fluoride red phosphors have been extensively applied in WLEDs due to their broadband excitation and narrowband emission, but the low luminescence efficiency and poor stability severely restrict their practical applications. Herein, Nb5+ ions are doped into the Ta5+ sites in Mn4+-activated K2TaF7 to optimize luminescence efficiency and stability. X-ray diffraction analysis confirms that the K2Ta1−xNbxF7:Mn4+ solid solutions with monoclinic structure are successfully synthesized. Scanning electron microscopy result reveals that the phosphors consist of irregular rod-like crystals with average length of 20–50 μm and width of 2–10 μm. Due to the distorted octahedral environment around Mn4+, these Mn4+-activated phosphors exhibit distinct zero phonon line in their emission spectra. The Mn4+ rare particle surface, improved structural rigidity together with low solubility of the solid solutions lead to the inhibited hydrolysis of [MnF6]2‒ in water and hence restrain the degradation in emission intensity, resulting in the simultaneous achievement of superior luminescence efficiency and moisture resistance. A warm WLED device with a low correlated color temperature of 3877 K and a high color rendering index of 90.6 is obtained based on K2Ta0.7Nb0.3F7:Mn4+ phosphor immersed in water for 1440 min. This work demonstrates the promising potential of K2Ta1−xNbxF7:Mn4+ as efficient red phosphors for advanced lighting applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrochemical performance evaluation of Ru-doped TiO2 synthesized via sol–gel approach 溶胶-凝胶法制备钌掺杂TiO2的电化学性能评价

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14922-9

Aditya P. Adhyapak, Ankit R. Ransing, Vishal S. Kadam, Chaitali V. Jagtap, P. E. Lokhande, Udayabhaskar Rednam, V. T. Thavale, U. S. Chavan, Parag V. Adhyapak, Habib M. Pathan

{"title":"Electrochemical performance evaluation of Ru-doped TiO2 synthesized via sol–gel approach","authors":"Aditya P. Adhyapak, Ankit R. Ransing, Vishal S. Kadam, Chaitali V. Jagtap, P. E. Lokhande, Udayabhaskar Rednam, V. T. Thavale, U. S. Chavan, Parag V. Adhyapak, Habib M. Pathan","doi":"10.1007/s10854-025-14922-9","DOIUrl":"10.1007/s10854-025-14922-9","url":null,"abstract":"<div>Supercapacitor systems have gained significant attention across industries for their exceptional features, such as high power density, extended cycle life, and wide operational temperature range. This study explores the development of a ruthenium-doped titanium dioxide (TiO2) nanocomposite via a simple sol–gel synthesis technique for applications in supercapacitors. The ruthenium doping concentrations ranged between 0.25% and 1% in TiO2, and the results were benchmarked against pure TiO2. Structural analysis identified a mixed-phase composition of rutile and anatase, forming a tetragonal crystal structure. Measurements of surface area revealed an improvement in specific surface area for the doped samples. Electrochemical performance testing highlighted that TiO2 doped with 0.5% Ru delivered superior results, achieving a specific capacitance of 427 Fg⁻1 at a current density of 5 Ag⁻1, while exhibiting remarkable cyclic stability. Moreover, an all-solid-state asymmetric supercapacitor device incorporating this material achieved an energy density of 20 Whkg⁻1 and a power density of 1125 Wkg⁻1, retaining full capacitance after 5000 charge–discharge cycles. These findings underscore the potential of Ru-doped TiO2 composites in enhancing electrochemical performance for practical energy storage applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing hole mobility in p-type thin-film transistors: the impact of annealing in air on intrinsic and p+ µc-Si:H films deposited at 100 °C 提高p型薄膜晶体管的空穴迁移率：空气退火对100°C下沉积的本征和p+µC - si:H薄膜的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14950-5

Tamila Anutgan, Semen Dolgoborodov, Antonio J. Olivares, Pere Roca i Cabarrocas, Mustafa Anutgan

{"title":"Enhancing hole mobility in p-type thin-film transistors: the impact of annealing in air on intrinsic and p+ µc-Si:H films deposited at 100 °C","authors":"Tamila Anutgan, Semen Dolgoborodov, Antonio J. Olivares, Pere Roca i Cabarrocas, Mustafa Anutgan","doi":"10.1007/s10854-025-14950-5","DOIUrl":"10.1007/s10854-025-14950-5","url":null,"abstract":"<div>P-type bottom gate (BG) microcrystalline silicon (µc-Si:H) thin-film transistors (TFTs) were fabricated utilizing intrinsic and p+ µc-Si:H films grown at a low process temperature of 100 °C via plasma-enhanced chemical vapor deposition (PECVD) technique. The study explored the impact of 10-min annealing treatment within the temperature range of 200–350 °C on the hole mobility in both p+ µc-Si:H films and BG TFTs. The as-grown p+ µc-Si:H films exhibited notably high hole mobilities compared to the usual values, with further enhancement observed after annealing in air (2–3 cm2/(V s)). As for the field-effect mobility of p-type BG TFTs, it was within the usual range for the fresh devices. Similar to the mobility improvement in p+ films, the p-type TFT mobility experienced a significant increase following annealing in air, compared to vacuum annealing. Further subjection of the TFT to annealing in air at elevated temperatures up to 350 °C resulted in a progressive enhancement in field-effect mobility up to ⁓0.13 cm2/(V s). Other important consequences are the decrease in the TFT threshold voltage and the improvement in its electrical stability. These findings emphasize the importance of applying a simple and short low-temperature annealing treatment in air for advancing the p-type BG µc-Si:H TFT performance, thereby rendering them viable for CMOS applications. The mechanism underlying this positive effect of the annealing in air was investigated by the attenuated-total-reflection (ATR) Fourier transform infrared (FTIR), Ultraviolet–Visible–near infrared (UV–VIS–NIR) spectroscopies, and computer simulations of the TFT transfer characteristics.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14950-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable preparation of flowered Cu-doped Zn1-xCuxMn2O4 spinel and its application in electrode materials for supercapacitors 花型cu掺杂Zn1-xCuxMn2O4尖晶石的可控制备及其在超级电容器电极材料中的应用

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14885-x

Junxia Wang, Li Shi, Xiaoli Wang, Lixia Yang

{"title":"Controllable preparation of flowered Cu-doped Zn1-xCuxMn2O4 spinel and its application in electrode materials for supercapacitors","authors":"Junxia Wang, Li Shi, Xiaoli Wang, Lixia Yang","doi":"10.1007/s10854-025-14885-x","DOIUrl":"10.1007/s10854-025-14885-x","url":null,"abstract":"<div>The design of high-performance electrode materials is a hot topic in supercapacitor research. A novel series of flowered Cu-doped Zn1-xCuxMn2O4 spinel prepared by a simple hydrothermal method is used as the high-performance supercapacitor electrode materials. The morphology and the structure of Cu-doped Zn1-xCuxMn2O4 spinel are characterized and analyzed by X-Ray Diffraction (XRD), Field-Emission Scanning Electron Microscope (FE-SEM), Fourier Transform Infrared Spectrometer (FT-IR), and X-ray Photoelectron Spectroscopy (XPS). The results indicate that Cu2+ ions successfully replace Zn2+ ions into the crystal lattices of Zn1-xCuxMn2O4 spinel and keep a similar flowered morphology with ZnMn2O4. However, the incorporation of Cu2+ ions in the spinel crystal lattices leads to little microstructure change in samples. Flowered ZnMn2O4 is self-assembled from fluffy-tipped micron rods. Flowered Zn1-xCuxMn2O4 spinel is self-assembled from smooth diamond-shaped nanostructures. The possible morphology formation mechanism of the flowered ZnMn2O4 might be the micelle formation of the structure-directing agent of sodium citrate in solution. Introducing Cu2+ ions into the spinel crystal lattices effectively contributes to the improvement of the capacitance and the cyclability of Cu-doped Zn1-xCuxMn2O4 spinel. Among them, Zn0.7Cu0.3Mn2O4 shows the highest specific capacitance with 281 F/g at a current density of 1 A/g and better cyclic performance with a capacitance retention rate of 77.4% after 1000 cycles.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Ni addition on microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects Ni添加对全（Cu,Ni）6Sn5 IMC互连组织和可靠性的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14932-7

P. Liu, J. Ren, M. L. Huang

{"title":"Effects of Ni addition on microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects","authors":"P. Liu, J. Ren, M. L. Huang","doi":"10.1007/s10854-025-14932-7","DOIUrl":"10.1007/s10854-025-14932-7","url":null,"abstract":"<div>Full intermetallic compound (IMC) interconnects have emerged as a promising die-attach solution for third-generation semiconductor power devices due to their superior high-temperature stability. This study demonstrated the fabrication of Cu/(Cu,Ni)6Sn5/Cu full IMC interconnects using the current driven bonding (CDB) method with Sn-0.1Ni solder, focusing on microstructural evolution and electromigration (EM) resistance. Systematic analysis of liquid–solid EM behavior under high current stressing (1.0 × 104 A/cm2) revealed that the dopant of Ni significantly suppressed the growth of anode (Cu,Ni)3Sn IMCs, yielding a thickness of 1.54 µm compared to 3.13 µm for the cathode Cu3Sn IMCs. EM testing (150 °C, 1.0 × 104 A/cm2, 500 h) demonstrated exceptional stability, with the anode (Cu,Ni)3Sn IMCs increasing by only 0.47 μm versus 1.95 µm for the cathode Cu3Sn IMCs, and limited coarsening of (Cu,Ni)6Sn5 grains, with an average grain size of 11.72 µm in as-fabricated state increasing to 15.08 µm after current stressing. High shear strength was achieved for as-fabricated full (Cu,Ni)6Sn5 IMC interconnects (58.7 MPa) and was maintained after aging (55.5 MPa) and current stressing (51.3 MPa). These results highlight the CDB method with Sn-0.1Ni solder as an effective strategy for fabricating full IMC interconnects with high strength and enhanced EM reliability.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing the structural, optical, hydrophobic, and electrical properties of (Sn/Mg) co-doped ZnO thin films for application as solar cell electrodes 优化用于太阳能电池电极的（Sn/Mg）共掺杂ZnO薄膜的结构、光学、疏水性和电学性能

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14918-5

Imadeddine Bellili, Warda Darenfad, Noubeil Guermat, Nadir Bouarissa

{"title":"Optimizing the structural, optical, hydrophobic, and electrical properties of (Sn/Mg) co-doped ZnO thin films for application as solar cell electrodes","authors":"Imadeddine Bellili, Warda Darenfad, Noubeil Guermat, Nadir Bouarissa","doi":"10.1007/s10854-025-14918-5","DOIUrl":"10.1007/s10854-025-14918-5","url":null,"abstract":"<div>A simple chemical pneumatic spray pyrolysis technique was employed to prepare thin films of pure ZnO, 1%Mg-doped ZnO, and co-doped 1%Sn/x%Mg (x = 1 and 2) ZnO on ordinary glass substrates at a deposition temperature of 450 °C. The influence of doping and co-doping on the physical properties of the deposited films was systematically investigated. Structural analysis using X-ray diffraction (XRD) and Raman spectroscopy revealed that all samples exhibit a hexagonal crystalline structure with a preferred orientation along the (002) direction, perpendicular to the substrate, with no secondary phases detected. The crystalline quality improved for both doped and co-doped films compared to the undoped ZnO film. Atomic Force Microscopy (AFM) micrographs indicated an increase in surface roughness with doping while co-doping with 1% Sn/1% Mg led to a reduction in roughness compared to pure ZnO. Static contact angle (CA) measurements correlated well with the AFM analysis, showing hydrophobic behavior (CA > 90°) for all elaborated films. This hydrophobic nature is a critical feature for mitigating humidity-induced degradation, thereby enhancing the durability and efficiency of thin-film solar cell layers. Optical analysis demonstrated improved transparency, with average values increasing from 86 to 91%, alongside a widening of the optical bandgap from 3.27 eV to 3.39 eV. The Urbach energy decreased from 329 to 320 meV upon the incorporation of Mg and/or Sn into ZnO. The electrical properties of the ZnO thin films also improved significantly due to the effective incorporation of Sn/Mg, resulting in a low resistivity of 5.44 × 10−3 Ω.cm and a high figure of merit (FOM) of 3.68 × 10−3 Ω−1 for the (1%Sn/1%Mg)-ZnO film. Based on the findings of this study, the ZnO:1%Sn:1%Mg film represents the optimal condition for use as a transparent conducting electrode in thin-film solar cells.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144131487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a smartphone-based portable immunosensor with PVA coating for stable detection of dengue virus 基于智能手机的PVA涂层便携式登革热病毒稳定检测免疫传感器的研制

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14953-2

Aishwarya Kapse, Sohel Shaikh, Arpita Pandey-Tiwari

{"title":"Development of a smartphone-based portable immunosensor with PVA coating for stable detection of dengue virus","authors":"Aishwarya Kapse, Sohel Shaikh, Arpita Pandey-Tiwari","doi":"10.1007/s10854-025-14953-2","DOIUrl":"10.1007/s10854-025-14953-2","url":null,"abstract":"<div>Dengue fever affects millions globally, necessitating early diagnosis to prevent severe complications such as dengue hemorrhagic fever (DHF) and dengue shock syndrome (DSS). This study presents the development of a smartphone-based portable immunosensor for the stable and rapid detection of the Dengue virus non-structural protein 1 (DENV-NS1) antigen. The immunosensor utilizes a screen-printed carbon electrode (SPCE) enhanced with a polyvinyl alcohol (PVA) coating to improve stability and performance. Field emission scanning electron microscopy (FESEM) is used to observe the changes in surface morphology of the working electrode. The EDC/NHS carbodiimide chemistry is employed to immobilize antibodies on the SPCE surface, ensuring precise detection of dengue NS1 along with improved sensitivity. Integrated with the portable \"Sensit\" electrochemical device, this biosensor achieves a low limit of detection (LOD) of 22.43 ng/mL and demonstrates high specificity with minimal nonspecific binding against other viral NS1 proteins. The PVA coating ensures excellent stability, allowing for reliable storage for up to 9 weeks at 4 °C. The immunosensor offers a fast response, minimal sample preparation, and easy operation via a smartphone interface. Clinical validation underscores its effectiveness, making it a promising tool for point-of-care dengue virus detection, offering accuracy and sensitivity comparable to laboratory-based sensors.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Targeted doping-induced modulation of conductive filaments in ZnO films for digital-to-analog resistive switching 用于数模电阻开关的ZnO薄膜导电丝的定向掺杂诱导调制

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14907-8

Phu-Quan Pham, Ngoc Hong Nguyen, Lien Hoang Huynh, Tai Anh Van Vo, Thuy-Anh Tran, Truong Huu Nguyen, Hoa Thi Lai, Duy Thai Le, Thang Bach Phan, Ngoc Kim Pham

引用次数: 0

Development of expanded graphite composite-based triboelectric nanogenerator for sustainable energy generation 可持续能源发电用膨胀石墨复合摩擦纳米发电机的研制

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14952-3

Sebghatullah Amini, Rumana Farheen Sagade Muktar Ahmed, Sangamesha Madanahalli Ankanathappa, Krishnaveni Sannathammegowda

{"title":"Development of expanded graphite composite-based triboelectric nanogenerator for sustainable energy generation","authors":"Sebghatullah Amini, Rumana Farheen Sagade Muktar Ahmed, Sangamesha Madanahalli Ankanathappa, Krishnaveni Sannathammegowda","doi":"10.1007/s10854-025-14952-3","DOIUrl":"10.1007/s10854-025-14952-3","url":null,"abstract":"<div>Triboelectric Nanogenerators (TENG), transformational devices that harness mechanical energy to generate electricity, are pivotal for driving the advancement of autonomous technologies in today’s mobile-centric world. In this study, a TENG is developed, using a novel composite film of Polyvinyl Alcohol-Expanded Graphite (PVA-EGr) as the positive triboelectric layer, Polyurethane (PU) as the negative triboelectric layer, and aluminum (Al) foil tape as electrodes. Various characterizations are performed to study the properties of the composite film and compared to pristine PVA film, including crystallographic structure, surface morphology, elemental composition, chemical bonding, and analysis of functional groups present in both films. Further, the electrical performance of the fabricated devices shows that the TENG with 0.4 g of EGr achieves the highest output voltage, current, and power of 264.68 V, 6.87 μA, and 2.88 mW, respectively. This optimized device demonstrates its capability by charging different capacitors and powering a series of green LEDs, highlighting its suitability for practical applications in electronic devices.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0