Journal of Materials Science: Materials in Electronics最新文献_第2页

Exploring the impact of lithium doping on the optoelectrical, optical, and electrical properties of spray-deposited ZnS thin films 探索锂掺杂对喷雾沉积 ZnS 薄膜光电、光学和电气性能的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14682-6

Abdullah Alsulami, Ali Alsalme

{"title":"Exploring the impact of lithium doping on the optoelectrical, optical, and electrical properties of spray-deposited ZnS thin films","authors":"Abdullah Alsulami, Ali Alsalme","doi":"10.1007/s10854-025-14682-6","DOIUrl":"10.1007/s10854-025-14682-6","url":null,"abstract":"<div>In this study, ZnS and lithium-doped zinc sulfide (Li: ZnS) films were synthesized using a cost-effective spray pyrolysis technique, with lithium doping concentrations of 3, 6, and 9 wt%. X-ray diffraction (XRD) analysis confirmed that both undoped and Li-doped ZnS films exhibit a polycrystalline cubic structure. Structural characterization revealed that the crystallite size initially increased and then decreased as the Li content was raised from 3 to 9 wt%, while the strain and dislocation density followed a similar trend, first decreasing and then increasing with higher Li concentrations. Optical property analysis demonstrated that key parameters, including the refractive index, reflectance, Urbach energy, and absorption coefficient, improved significantly with increasing Li doping. Additionally, optoelectrical properties like optical conductivity, plasma frequency, and optical carrier concentration were enhanced as the Li content increased. Nonlinear optical properties also showed improvement with higher Li doping levels. Electrical measurements indicated that both electrical mobility and carrier concentration increased with Li content, whereas electrical resistivity exhibited an inverse relationship. The study highlights the potential of Li-doped ZnS films as efficient window layers for thin-film solar cells. DC conductivity analysis revealed a reduction in activation energy with increasing Li content. Furthermore, an ITO/Li:ZnS/Sb₂S₃/Au heterojunction was fabricated, and photovoltaic performance evaluation showed a notable enhancement in power conversion efficiency, increasing from 3.59% to 7.98% as the Li doping ratio was raised. These findings highlight the promising optoelectronic and photovoltaic applications of Li-doped ZnS films.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Supercritical carbon dioxide mediated fortification of nanotungsten carbide into polyindole for enhanced electrochemical energy storage and corrosion protection of mild steel

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14643-z

Ila Joshi, Sameena Mehtab, Arun Bughani, Harish Mudila, M. G. H. Zaidi

{"title":"Supercritical carbon dioxide mediated fortification of nanotungsten carbide into polyindole for enhanced electrochemical energy storage and corrosion protection of mild steel","authors":"Ila Joshi, Sameena Mehtab, Arun Bughani, Harish Mudila, M. G. H. Zaidi","doi":"10.1007/s10854-025-14643-z","DOIUrl":"10.1007/s10854-025-14643-z","url":null,"abstract":"<div>This study presents the synthesis of tungsten carbide (WC) reinforced polyindole (PIN) nanohybrids (NHs) using supercritical carbon dioxide (sCO2) as a reaction medium, targeting advancements in electrochemical energy storage. NHs were developed through ferric chloride-assisted chemical oxidative polymerization of indole, with varying WC weight fractions, conducted at 2200 psi and 80 °C over 7 h. sCO2, known for its enhanced mass transfer and environmentally friendly nature, significantly aids in creating homogenous NHs with improved surface area and porosity, key factors for efficient charge storage. Mild steel current collectors were employed to fabricate 1 cm2 NHs-based working electrodes (WEs), which were then examined for their electrical and electrochemical properties. The NH derived WEs demonstrated an increase in electrical conductivity with applied voltage, with NH-III (WC 25%; w/w) exhibiting the highest direct current conductivity amongst the series. NH-III demonstrates a specific capacitance of 490 F/g, coupled with energy and power densities of 24.5 Wh/kg and 201.4 W/kg, respectively, showcasing potential for high-performance supercapacitor applications. Over 1500 cycles, NH-III retained 95% of its initial capacitance, indicating robust cyclic stability. Additionally, the potentiodynamic polarization technique revealed superior anti-corrosive behaviour for NH-III in 1.0 M KOH, highlighting its durability in alkaline environments for long-term application. The integration of WC within PIN matrices thus marks a promising approach to enhancing the electrochemical and structural stability of supercapacitor materials.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase composition and microwave dielectric properties of two garnet structured Y2BaM4SiO12 (M = Al, Ga) ceramics with large size Ba cations on A-site

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14559-8

Junqi Chen, Haotian Xie, Zhaohui Wang, Jingjing An, Peilin Qing, Jinwu Chen

{"title":"Phase composition and microwave dielectric properties of two garnet structured Y2BaM4SiO12 (M = Al, Ga) ceramics with large size Ba cations on A-site","authors":"Junqi Chen, Haotian Xie, Zhaohui Wang, Jingjing An, Peilin Qing, Jinwu Chen","doi":"10.1007/s10854-025-14559-8","DOIUrl":"10.1007/s10854-025-14559-8","url":null,"abstract":"<div>In this work, two novel Ba-contained Y2BaM4SiO12 (M = Al, Ga) ceramics with garnet structured were obtained by a solid-state reaction method. XRD patterns combined with Rietveld refinement analysis demonstrated that Y2BaAl4SiO12 was formed a single cubic structure phase with an Ia-3d space group. While in the Y2BaGa4SiO12 ceramics, apart from the main phase of garnet structure, a trace of peaks of SiO2 were also detected. The bond valence and P–V–L chemical bond theory analysis results indicated that both of Ba cations presents a strength compressed effect in the Y2BaM4SiO12 (M = Al, Ga) ceramics. And the large lattice energy of Al-O bonds might be the main reason for the Y2BaAl4SiO12 formation of a stable garnet crystal structure without secondary phase and high Q × f values. The Y2BaGa4SiO12 ceramics with a low relative density (91%) and microwave dielectric properties of εr = 12.6, Q × f = 4,530 GHz, and τf = − 28.6 ppm/°C. The dense Y2BaAl4SiO12 ceramics (relative density of 96.2%) with microwave dielectric properties of εr = 10.3, Q × f = 8,700 GHz, and τf = − 20.3 ppm/°C was obtained at 1360 °C for 4 h. In the garnet structure, all the results demonstrates that the mismatch among the A-sites or C-sites cations will result in a low-fired temperature and severely deteriorated Q × f values.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiferroic properties of La-doped BiFeO3 thin films on highly ordered pyrolytic graphite single-crystal substrates using PLD for energy storage applications 利用 PLD 在高有序热解石墨单晶基底上制备用于储能应用的掺 La BiFeO3 薄膜的多铁特性

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14683-5

Jong Yeog Son, Ahmed I. Ali, Abeer M. Alosaimi, Reda Abdel-Hameed, Elbadawy A. Kamoun

{"title":"Multiferroic properties of La-doped BiFeO3 thin films on highly ordered pyrolytic graphite single-crystal substrates using PLD for energy storage applications","authors":"Jong Yeog Son, Ahmed I. Ali, Abeer M. Alosaimi, Reda Abdel-Hameed, Elbadawy A. Kamoun","doi":"10.1007/s10854-025-14683-5","DOIUrl":"10.1007/s10854-025-14683-5","url":null,"abstract":"<div>La-doped Bi1.2FeO3 (BFO) thin films deposited on highly ordered pyrolytic graphite (HOPG) substrates were synthesized using pulsed laser deposition method (PLD). The impact of the lanthanum (La) doping on the leakage current, ferroelectric, magnetic, and fatigue properties of the thin films was investigated. This study explores the energy storage and multiferroic properties, focusing on the influence of incorporated La concentrations. Preferentially, (111)-oriented polycrystalline BFO thin films, particularly doped with 10 mol.% La, demonstrated superior crystallinity and exceptional ferroelectric properties. As La concentration increased, BFO thin films exhibited improved leakage current characteristics and enhanced magnetic properties. The remanent polarization of BFO thin film was approximately 23.9 μC/cm2 without La doping. However, as La doping concentration increased to 5 and 10 mol.%, it significantly improved to approximately 32.6 and 48.4 μC/cm2; respectively. Notably, BFO thin films doped with approximately 15 mol.% La achieved a maximum energy density of around 70.6 J/cm3, coupled with an energy storage efficiency of approximately 68.2% and a loss energy density of about 32.9 J/cm3. This performance enhancement is attributed to the improved ferroelectric properties and reduced leakage current enabled by La doping. Thus, the deposition of polycrystalline BFO thin films on HOPG substrates and the optimization of their energy storage properties through La doping provide promising advancements for energy storage technologies.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Uric acid sensing with non-enzymatic cadmium sulfide decorated with rGO

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14677-3

Ziyu Liu, Guangzhong Xie, Jing Li, Haozhen Li, Yuanjie Su

引用次数: 0

Enhancing dielectric and ferroelectric properties of PZT(52/48) electroceramics by niobium doping 通过掺杂铌提高 PZT（52/48）电陶瓷的介电和铁电特性

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14652-y

A. M. Habeeb Khan, M. Prabu, Mathew Steephan, M. Saravanan, T. K. Sreeja

{"title":"Enhancing dielectric and ferroelectric properties of PZT(52/48) electroceramics by niobium doping","authors":"A. M. Habeeb Khan, M. Prabu, Mathew Steephan, M. Saravanan, T. K. Sreeja","doi":"10.1007/s10854-025-14652-y","DOIUrl":"10.1007/s10854-025-14652-y","url":null,"abstract":"<div>Finding novel materials and compositions that exhibit a close coupling between ferroelectricity and piezoelectricity is of significant technological importance. Lead zirconate titanate (PZT) is known to benefit from niobium (Nb) doping in a number of ways. In the present study, perovskite Pb(Nb0.02(Zr0.52Ti0.48)0.98O3 ceramic material was synthesized and the effect of niobium on the dielectric and ferroelectric properties are investigated. The conventional sol–gel route was used to synthesize Pb(Nb0.02(Zr0.52Ti0.48)0.98)O3 ceramics. X-ray diffraction indicates that the perovskite PNZT ceramics exhibit a tetragonal structure free of unwanted pyrochlore phase. In addition to confirming the crystal formation at higher temperatures, simultaneous TGA/DTA analyses of the gel powder reveal endothermic and exothermic peaks that correspond to weight loss at various temperatures. Grain size of the sintered samples was found to be around 300 nm with uniform dispersion, according to SEM examination. The electrical properties of the ceramics were examined as a function of temperature (from room temperature to 500 °C) and frequency (from 100 Hz to 1 MHz) using complex impedance spectroscopy (CIS). The results of the impedance spectrum show that the maximum dielectric constant at Curie temperature is ≈1800 and it reveals that the dielectric loss increases with frequency and the dielectric constant decreases. The sample’s activation energy, which was determined to be 0.167 eV, was calculated using the slope of the Arrhenius plot of DC conductivity vs the inverse of absolute temperature. The coercive electric field (Ec) and remnant polarization (Pr) of the ferroelectric loop evaluated at room temperature were determined to be 3.69 kV/cm and 1.21 μC/cm2, respectively.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigating the sintering temperature and slurry tape formulation to prepare doped BaTi4O9 ceramic substrates with good dielectric properties

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14650-0

Yi Pu, Debin Lin, Daokuan Liang, Yongbao Feng, Peng Xu, Qiulong Li

{"title":"Investigating the sintering temperature and slurry tape formulation to prepare doped BaTi4O9 ceramic substrates with good dielectric properties","authors":"Yi Pu, Debin Lin, Daokuan Liang, Yongbao Feng, Peng Xu, Qiulong Li","doi":"10.1007/s10854-025-14650-0","DOIUrl":"10.1007/s10854-025-14650-0","url":null,"abstract":"<div>In microwave electronic applications, the advancement of resonators, filters, substrates, and waveguide circuits is significantly influenced by the dielectric ceramics. This research focuses on preparing Nb-doped BaTi4O9 (BT-N) dielectric ceramics, with a specific emphasis on the dielectric and mechanical properties of the BT-N tape-cast substrates. Herein, we adopted conventional solid-state sintering techniques to fabricate the BT-N ceramics and optimized the tape casting process. The slip composition was meticulously adjusted to ensure the green tapes with a smooth surface finish and robust mechanical properties, which shows high tensile strength of 0.81 MPa. The investigation results demonstrate that excessive sintering temperatures or soaking times lead to the emergence of the Ba2Ti9O20 secondary phase, thereby adversely impacting the material’s properties. The sintering kinetics of the BT-N substrates result demonstrates that the sintering temperature of 1260 °C for a duration of 2.5 h resulted in the most favorable combination of high density and superior dielectric characteristics. The sample using tape casting lamination process exhibits a high bulk density of 4.52 g/cm3, accompanied by a dielectric constant (εr) of 40.38 and dielectric loss (tanδ) of 8.99 × 10–4. Under the tape casting processing, the dielectric properties of the BT-N ceramic substrates are significantly optimized.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene reinforced Cu superfine wires: 100-m length with enhanced mechanical strength and electrical conductivity

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14612-6

Xinyu Zhu, Jiangli Xue, Tingting Zuo, Yadong Ru, Yuefan Xu, Bin Chen, Zhaoshun Gao, Yongsheng Liu

{"title":"Graphene reinforced Cu superfine wires: 100-m length with enhanced mechanical strength and electrical conductivity","authors":"Xinyu Zhu, Jiangli Xue, Tingting Zuo, Yadong Ru, Yuefan Xu, Bin Chen, Zhaoshun Gao, Yongsheng Liu","doi":"10.1007/s10854-025-14612-6","DOIUrl":"10.1007/s10854-025-14612-6","url":null,"abstract":"<div>100-m-long level of copper/graphene composite superfine wires (Cu/Gr wires) with a precise diameter of 100 µm were successfully prepared for the first time. This achievement was accomplished through a combination of hot-pressed sintering and cold drawing techniques, remarkably executed without the need for any intermediate annealing processes, showcasing a significant advancement in material fabrication. As a result, the Cu/Gr wires demonstrated exceptional mechanical strength, reaching 637 MPa, and simultaneously preserved superior electrical conductivity, achieving 95.7% of the International Annealed Copper Standard (IACS), marking a significant advancement in material performance. The enhanced performance is attributed to the in situ growth of high-quality graphene, which is uniformly dispersed throughout the Cu matrix, as well as the formation of nano-twins and dislocations induced by large deformation processing. The present work is poised to deliver premium electrical wires and cables, designed to meet the stringent demands of electric power systems, aerospace, and the transportation industry.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth process-driven modulation of electrical characteristics in MBE-grown few-layer MoTe2

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14546-z

Kamlesh Bhatt, Santanu Kandar, Ashok Kapoor, Rajendra Singh

{"title":"Growth process-driven modulation of electrical characteristics in MBE-grown few-layer MoTe2","authors":"Kamlesh Bhatt, Santanu Kandar, Ashok Kapoor, Rajendra Singh","doi":"10.1007/s10854-025-14546-z","DOIUrl":"10.1007/s10854-025-14546-z","url":null,"abstract":"<div>2D TMDC materials are potential materials for future energy-efficient electronic and optoelectronic devices due to their clean, dangling-bond-free interface and interesting material properties. Controlling carrier statistics and the electrical properties is a crucial aspect for their wide application in ultrathin semiconductor-based devices; however, such tuning mostly requires extrinsic doping and bias operations. Here, we present our study on controlling the electrical properties of few-layer MoTe2 films grown over a large area on sapphire using molecular beam epitaxy. The MBE growth parameters, such as growth temperature and chalcogen-to-metal flux ratio, have been optimized to control the stoichiometry of few-layer MoTe2 films precisely. These stoichiometric changes, in turn, influence the electrical properties of the grown films. Raman spectroscopy and AFM were utilized to confirm the phase purity and uniformity of these films. The detailed XPS investigations show the effect of chalcogen deficiency (i.e., the presence of Te vacancies) and excess tellurium atoms on the semiconducting nature of the grown films. The significant shift in the fermi level towards the valence band confirms that the film becomes more p-type due to the presence of extra Te atoms in the lattice. Similarly, the presence of Te vacancies is found to shift the fermi level in the other direction. Our work provides a convenient approach for controlling MoTe2's electrical characteristics uniformly without introducing any foreign impurity. This effective control over the electrical nature of the grown films by modulating the growth parameters can be advantageous for utilizing the ambipolar nature (i.e., both n and p type nature) of 2D MoTe2 for applications requiring transitions between electron and hole conduction.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

One-step preparation P-doped sisal fiber hard carbon: a high electrochemical performance anode material for sodium ion batteries

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14638-w

Yujie Wang, Yuan Luo, Xuenuan Li, Shilong Lin, Yingxi Qin, Kailong Guo, Lei Liao, Weifang Wang, Kaiyou Zhang, Aimiao Qin

{"title":"One-step preparation P-doped sisal fiber hard carbon: a high electrochemical performance anode material for sodium ion batteries","authors":"Yujie Wang, Yuan Luo, Xuenuan Li, Shilong Lin, Yingxi Qin, Kailong Guo, Lei Liao, Weifang Wang, Kaiyou Zhang, Aimiao Qin","doi":"10.1007/s10854-025-14638-w","DOIUrl":"10.1007/s10854-025-14638-w","url":null,"abstract":"<div>Biomass hard carbon materials are considered as one of the most promising anode materials for sodium ion batteries due to their cost-effectiveness and low-voltage plateau capability. In this work, phosphorus-doped sisal fiber carbon (PSFC) anode material for sodium ion batteries with rich mesopores and micropores and high capacity retention was prepared by a one-step method using sisal fiber (SF) as the raw material. The P doping greatly improved the microstructure and the electrochemical performance of SFC. The specific capacity of PSFC was as high as 335.575 mAh g−1 for the first turn charge at a current density of 0.05 A g−1, and still maintained at 292.55 mAh g−1 after 500 cycles, with capacity retention rate as high as 87.1%. The first cycle efficiency is even improved from 19.65 to 45.55% for SFC. This work provides a simple and rapid strategy for improving the electrochemical performance of biomass hard carbon anode materials, with great potential for application.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0