Journal of Materials Science: Materials in Electronics最新文献

{"title":"Correction to: Effect of Al3+ substitution on the synthesis, magnetic, and electrical properties of Ni0.3Zn0.5Co0.2Fe2−xAlxO4 spinel ferrites","authors":"M. Madhu, A. Venkateswara Rao, N. Murali, D. Parajuli, Tulu Wegayehu Mammo","doi":"10.1007/s10854-025-14938-1","DOIUrl":"10.1007/s10854-025-14938-1","url":null,"abstract":"","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive electrical characterization of Cr/V2O5/p-Si junction diode with V2O5 thin film at room temperature","authors":"Zakir Çaldıran","doi":"10.1007/s10854-025-14913-w","DOIUrl":"10.1007/s10854-025-14913-w","url":null,"abstract":"<div><p>This study explores the device properties of vanadium pentoxide (V₂O₅) thin films in the Cr/V₂O₅/p-Si/Al junction diode structure. The experimental setup utilized p-type silicon (p-Si) wafers with a resistivity of 1–10 Ω/cm and a thickness of 400 µm, chemically cleaned using the RCA1 and RCA2 protocols. Aluminum (Al) was deposited on one surface of the wafer as a back contact and annealed at 580 °C to establish ohmic behavior. A 10 nm layer of V₂O₅ was thermally deposited on the opposite surface and followed by a 100 nm top contact of Cr was deposited by DC sputtering. For comparison, a Cr/p-Si/Al reference device was fabricated under identical conditions, excluding the V₂O₅ layer. Electrical measurements, including <i>I</i>–<i>V</i> and diode parameter analyses, were performed at room temperature using TE theory, Cheung, and Norde functions. Ideality factor (IF) and barrier height (BH) for the reference diode from the TE method were determined to be 2.03 and 0.58 eV, while the 8 V₂O₅-based devices exhibited IF values ranging from 1.89 to 1.96 and BH values between 0.68 and 0.74 eV. The best performing device, designated device 5, achieved an IF value of 1.90 and a BH value of 0.74 eV. In addition, the photodiode properties of this device were analyzed under a solar simulator. These results indicate that the incorporation of the V₂O₅ interface layer improves the barrier properties of the diode and has potential for advanced rectification and photovoltaic applications. The presence of the series resistance (SR) and interface layer in the device and the inhomogeneity of the BH are also considered as factors contributing to that increase in IF. <i>C</i>–<i>V</i> characterization, another critical technique for understanding the electrical parameters of Schottky-type devices, was used to calculate important parameters such as BH and carrier concentration for the best performing device. Furthermore, <i>G/ω</i>–<i>V</i> and <i>Z</i>–<i>V</i> measurements at different frequencies were analyzed to better understand the electrical properties and surface/interface states of the device with the V₂O₅ interface.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14913-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144140093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"PAA-assisted synthesis of color-tunable Zn2SiO4:Mn2+ phosphors","authors":"Huiya Li,&nbsp;Xiaomeng Wang,&nbsp;Xiangyi Zhao,&nbsp;Yao Ma,&nbsp;Xin Wang,&nbsp;Jixing Xie,&nbsp;Yunhong Jiao,&nbsp;Haiyun Ma,&nbsp;Hongqiang Qu,&nbsp;Jianzhong Xu,&nbsp;Liyong Wang","doi":"10.1007/s10854-025-14879-9","DOIUrl":"10.1007/s10854-025-14879-9","url":null,"abstract":"<div><p>Color-tunable Zn₂SiO₄:Mn²⁺ phosphors were synthesized by solvothermal method with the assistance of polyacrylic acid (PAA). The structure, morphology and photoluminescence properties of phosphors were characterised by X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. The results show that the PAA-assisted synthesis has no effect on the structure and morphology, but creates a new characteristic peak at 610 nm in the emission spectrum. Based on the luminescent properties of the prepared phosphors, their applications in light-emitting diodes (LEDs) and potential fingerprint identification were further explored. The results indicated that the color-tunable Zn₂SiO₄:Mn²⁺ phosphors could be applied to LEDs and fingerprint identification.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spectral regulation of Sn/Br-co-doped perovskite nanocrystalline glass","authors":"Hong Liang,&nbsp;Guoqiang Yin,&nbsp;Suiyuan Dong,&nbsp;Guoying Zhao,&nbsp;Yufeng Liu,&nbsp;Jingshan Hou,&nbsp;Yongzheng Fang","doi":"10.1007/s10854-025-14924-7","DOIUrl":"10.1007/s10854-025-14924-7","url":null,"abstract":"<div><p>The Sn/Br co-doped CsPbI₃ borosilicate glass was synthesized using the melt quenching method. It is revealed by transmission electron microscopy (TEM) and X-ray diffraction (XRD) results that Sn and Br are incorporated into the B-site and X-site of the nanocrystals, respectively Furthermore, it is particularly noteworthy that as the doping content rises, Sn and Br interact with Cs to generate two distinct types of nanocrystals (NCs), namely CsPbBr₃ and Cs (SnBr₃), which coexist with CsPbI₃ within the glass matrix. This finding is further substantiated by the data obtained from fluorescence microscopy. In correspondence with the structural alterations, as the doping concentration rises, a blue-shift phenomenon is initially manifested in the emission spectrum of the sample. After a certain concentration is reached, the superposition of different emission peaks begins to be shown by the sample, which stems from the co-existence of mixed-phase NCs within the system as is revealed by XRD and TEM. A highly effective approach for the spectral regulation of CsPbI₃ glass is furnished by the incorporation of Sn and Br ions. Not only can it enable the shift of monochromatic spectra, but it also holds the potential to render a single material capable of white-light emission. Meanwhile, the popularization and application of this NCs glass are also supported by excellent physical and chemical stability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144140091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Cd on structural, morphological, optical, and electrical properties of ZnS thin films","authors":"Ravi Sankar Reddy Mummadi,&nbsp;Kaleemulla Shaik","doi":"10.1007/s10854-025-14969-8","DOIUrl":"10.1007/s10854-025-14969-8","url":null,"abstract":"<div><p>This study concentrated on the synthesis and detailed characterization of Zn<span>(_{1-x})</span>Cd<span>(_{x})</span>S thin films prepared using the thermal evaporation technique. The thin films were analyzed for their structural, morphological, elemental, surface roughness, topographical, optical, and electrical properties using XRD, FE-SEM, EDAX, AFM, UV–Vis spectroscopy, photoluminescence (PL), Hall effect measurements, and I–V measurements, respectively. XRD patterns confirmed that the structure of Zn<span>(_{1-x})</span>Cd<span>(_{x})</span>S is cubic, while FE-SEM images revealed the complete growth phenomenon of the thin films. EDAX spectra verified the presence of Zn, S, and Cd in the samples. AFM measurements revealed that the RMS roughness of the Zn<span>(_{1-x})</span>Cd<span>(_{x})</span>S films decreased from 13.59 to 12.83 nm with dopant concentration. Absorption and energy band gaps were analyzed using UV–Vis spectroscopy. The investigation of photoluminescence (PL) spectra reveals peak intensity decreased with increasing dopant concentration, indicating a reduction in defect centers. Hall effect studies and I–V measurements (in dark and light) confirmed that the resistivity decreased and the electrical current of Zn<span>(_{1-x})</span>Cd<span>(_{x})</span>S thin films increased with higher dopant concentrations.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144140092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The mechanical and electromagnetic wave absorption properties of foamed concrete: effect of Mn–Zn ferrite and carbon fiber","authors":"Ying-hua Bai,&nbsp;Hao Xin","doi":"10.1007/s10854-025-14981-y","DOIUrl":"10.1007/s10854-025-14981-y","url":null,"abstract":"<div><p>To address electromagnetic pollution issues, a composite material was formulated by incorporating Mn-Zn ferrite (MZF) and carbon fiber (CF) into foamed concrete, thereby achieving both robust mechanical attributes and exceptional electromagnetic wave (EMW) absorption capabilities. Our results demonstrate that the incorporation of MZF harms the mechanical attributes of the foamed concrete, however, this simultaneously leads to a more uniform and focused pore size distribution, thereby significantly enhancing its reflection loss (RL) performance. Incorporating CF has proven effective in augmenting the foamed concrete’s mechanical strength and electromagnetic attenuation capacity. 0.3 wt% CF increased the compressive and flexural strength of the composite by 10.9% and 24.5%, respectively. The lowest recorded RL for the composite material within the 2–18 GHz frequency range reaches − 27.2 dB at a thickness of 8.7 mm and a resonant frequency of 15.84 GHz, while its adequate absorption bandwidth amounts to 1.44 GHz.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced sensitivity, structural, optical, magnetic properties, and thermal behaviour of Zn–Mg nanoferrites thick-film nanosensors for carbon monoxide (CO) gas detection study","authors":"Jadhav Vyankati Rama,&nbsp;Bhise Ramesh Baburao,&nbsp;Manisha Daryao Dhiware","doi":"10.1007/s10854-025-14966-x","DOIUrl":"10.1007/s10854-025-14966-x","url":null,"abstract":"<div><p>The synthesis of magnesium-zinc nanoferrite (ZnMgFeO₄) via the sol–gel auto-combustion method and the fabrication of thick-film sensors using a screen technique resulted in the production of single-phased samples, characterized by crystallite sizes ranging from 16 to 18 nm. X-ray diffraction analysis revealed an expansion in lattice parameter with Magnesium doping, indicating unit cell enlargement. FT-IR spectroscopy confirmed the substitution of magnesium ions in the octahedral sites. Optical measurements demonstrated a reduction in UV–visible spectroscopy with doping, attributed to particle size dependence. This comprehensive study sheds light on the structural, optical, and thermal (TG–DTA). Magnetic measurements signify decreased magnetization with Mg-ZnFe₂O₄ attributed to particle size dependence. Sensor modification made specifically was for gas detection of CO made sensitivity of 77.58% of Mg-doped Zn ferrite nanomaterials, offering valuable insights for CO gas detection.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Construction of AgCl/PbFe12O19 heterojunction with enhanced photocatalytic activity for pollutant degradation and mechanism insight","authors":"Yapeng Wang,&nbsp;Shifa Wang,&nbsp;Xiangyu Chen,&nbsp;Jingyi Yang,&nbsp;Peilin Mo,&nbsp;Xianlun Yu,&nbsp;Chaoli Chen,&nbsp;Huajing Gao,&nbsp;Leiming Fang,&nbsp;Asad Syed","doi":"10.1007/s10854-025-14962-1","DOIUrl":"10.1007/s10854-025-14962-1","url":null,"abstract":"<div><p>AgCl/PbFeO composite photocatalysts with varying AgCl contents were successfully synthesized using the polyacrylamide gel method combined with photoreduction method. Photocatalytic experiments demonstrated selective degradation of doxycycline hydrochloride (DC), tetracycline hydrochloride (TC), chlortetracycline hydrochloride (CTC), Rhodamine B (RhB), and Congo red (CR), particularly targeting azo (–N=N–) double bonds and sulfonate (–SO₃Na) groups. Under optimal condition, 15% mass ratio of AgCl, 20 mg/L initial concentration of CR, pH 7, and 120 min of photocatalytic reaction, the degradation efficiency of CR dye reached 86%. Free radical scavenging experiments revealed that holes, hydroxyl radicals, and superoxide radicals were the primary active species responsible for degradation. Based on experimental results and band theory analysis, it was determined that AgCl and PbFeO form a type II heterojunction, which facilitates charge transfer and separation, thereby enhancing photocatalytic activity. This composite photocatalyst effectively targets specific functional groups, and its mechanism for promoting dye degradation holds promise for the development of advanced photocatalysts for environmental purification.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures","authors":"H. G. Çetinkaya,&nbsp;Yusuf Badali,&nbsp;Ş. Altındal","doi":"10.1007/s10854-025-14923-8","DOIUrl":"10.1007/s10854-025-14923-8","url":null,"abstract":"<div><p>The Au/(PEG:Er–MnFe₂O₄)/n–Si junctions have been constructed and their possible charge/current transport mechanisms (CTMs) investigated across temperatures ranging from 80 to 340 K and a ± 3 V bias range using the I–V measurements. The forward bias semi-logarithmic I–V curves exhibited two distinct linear regimes. The semilogarithmic I–V characteristics show that while ideality factor (<i>n</i>) declines with inclining temperature, barrier height (BH) inclines. The thermionic emission model with double Gaussian dispersion (DGD) of the BHs was able to successfully explain such temperature-dependent changes in the BH and n. Plots of Φ_B0-q/2kT, Φ_B0-n, and n⁻¹-q/2kT curves showed two linear-portions, indicative of a DGD. These findings suggest that the fabricated Au/(PEG:Er–MnFe₂O₄)/n–Si diode could serve effectively as a temperature-sensor (TS) in whole temperature range. The distribution profile of the interface traps (D_it) in the forbidden energy band was obtained from the Card&amp;Rhoderick model by utilizing I–V data, considering the voltage-dependent Φ_B(V) and n(V) values for each temperature. The observed declines with inclining temperature and shifting positions of them was attributed to the restructure/reorder of D_it under the temperature effect. The obtained results suggest that the fabricated these structures are very sensitive to temperature and voltage and so can be used as a temperature application.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14923-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144140094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of energy storage performance of (Bi0.5Na0.5)0.7Sr0.3TiO3 ceramics by introducing La(Mg0.5Zr0.5)O3","authors":"Liangdong Li,&nbsp;Haixiang Guo,&nbsp;Ruiping La,&nbsp;Shiling Huang,&nbsp;Huanfu Zhou","doi":"10.1007/s10854-025-14943-4","DOIUrl":"10.1007/s10854-025-14943-4","url":null,"abstract":"<div><p>With the development of pulsed power devices in the direction of miniaturization, integration, and safety, the development of dielectric capacitors with large energy storage density (<i>W</i>_rec), high energy storage efficiency (<i>η</i>), and decent energy storage stability has become an important topic that needs to be discussed in depth in the academic community. In this study, (1 − <i>x</i>)(Bi_0.5Na_0.5)_0.7Sr_0.3TiO₃-<i>x</i>La(Mg_0.5Zr_0.5)O₃ [(1 − <i>x</i>)BNST-<i>x</i>LMZ] ceramics were prepared by traditional solid-phase method. Through rational component manipulation, the introduction of LMZ effectively disrupted the long-range ordered arrangement of the original matrix, constructing short-range polar nano-microregions that consequently delayed the saturation polarization of ceramics and reduced the residual polarization. Meanwhile, the introduction of LMZ significantly affects the microstructure and relaxor behavior of BNST-based ceramics, resulting in reduced grain size and a more compact ceramic structure. It was found that 0.85BNST-0.15LMZ ceramic exhibited decent energy storage performance under an electric field of 400 kV/cm, with a large <i>W</i>_rec of 4.53 J/cm and high <i>η</i> of 87.50%. It is noted that 0.85BNST-0.15LMZ ceramics exhibited ultra-fast discharge rate of 23 ns. These results indicate that 0.85BNST-0.15LMZ ceramics have broad development prospects in the field of supercapacitors for energy storage.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}