Journal of Materials Science: Materials in Electronics最新文献

{"title":"Exploring the role of AgNO3 nanofillers in reinforcing the properties of PVDF/PVP polymer blends","authors":"Vaibhavi Dixit,&nbsp;Neha Sharma,&nbsp;Dimpal Gaur,&nbsp;S. Z. Hashmi,&nbsp;Mohammed Ezzeldien,&nbsp;Shalendra Kumar,&nbsp;P. A. Alvi","doi":"10.1007/s10854-026-18836-y","DOIUrl":"10.1007/s10854-026-18836-y","url":null,"abstract":"<div><p>Polymer nanocomposites have emerged as promising multifunctional materials because they combine the flexibility and processability of polymeric matrices with the distinctive structural and functional characteristics of inorganic components. In the present work, PVDF/PVP/AgNO₃ nanocomposite films were successfully fabricated through a solution-casting approach to investigate the influence of AgNO₃ incorporation on the structural, morphological, and molecular characteristics of the polymer matrix. The prepared composite materials were systematically investigated using X-ray diffraction (XRD) which confirmed that the crystallite size of 7.70 nm and a reduced lattice strain of 1  ×  10^–5 for the composite. A substantial reduction in dislocation density and stress to 1.6  ×  10¹² m⁻² and 1.13 MPa, respectively, indicated improved structural ordering and reduced lattice imperfections. Raman and FTIR analyses demonstrated modifications in characteristic vibrational bands, particularly those associated with the carbonyl groups of PVP, suggesting interactions between Ag⁺ ions and the polymer matrix. However, surface morphology reveals predominantly spherical to quasi-spherical particles with rounded edges and varying sizes, distributed within the polymer matrix. Additionally, the shielding parameters have also been studied which suggest that the PVDF/PVP/AgNO₃ nanocomposite shows better shielding performance in the low-energy region, while the shielding effectiveness gradually reduces in the higher energy region. The novelty of this study lies in the systematic investigation of the combined effects of AgNO₃ incorporation on structural defects, polymer-filler interactions, surface morphology, and energy-dependent shielding performance, providing insights into the structure–property relationships of PVDF/PVP/AgNO₃ nanocomposites. The results demonstrate that AgNO₃ incorporation effectively modifies the crystallization behavior, defect structure, surface morphology, and shielding effectiveness of the PVDF/PVP matrix. The obtained findings highlight the potential of PVDF/PVP/AgNO₃ nanocomposites as a versatile material platform for the development of advanced functional polymer-based applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the dielectric response and AC conductivity of MnW0.9Ti0.1O4 filled CMC/PVP/PVA blend with varying CNPs content","authors":"Mohammed S. Alqahtani,&nbsp;A. M. Kamal,&nbsp;Yasser Saud Al-Ziyadi,&nbsp;Mohamed Shady,&nbsp;Doumbia Sekou,&nbsp;A. M. El-naggar","doi":"10.1007/s10854-026-18746-z","DOIUrl":"10.1007/s10854-026-18746-z","url":null,"abstract":"<div><p>This study investigates the dielectric response and AC conductivity of CMC/PVP/PVA blend nanocomposites reinforced with MnW_0.9Ti_0.1O₄ ceramic filler and varying carbon nanoparticles (CNPs) content (0–0.8 wt%). Films were fabricated by solution casting and characterized via XRD, SEM, dielectric spectroscopy, and impedance analysis (303–363 K, 100 Hz–1 MHz). XRD confirmed the successful incorporation of the crystalline ceramic filler, while SEM revealed rough heterogeneous surfaces that enhance interfacial polarization. The dielectric constant (ε′) showed non-monotonic behavior with CNPs content, peaking at 42.56 for 0.4 wt% CNPs (1 kHz, 363 K), whereas dielectric loss (ε″) increased monotonically to 14.00 at 0.8 wt%. AC conductivity increased with CNPs concentration, reaching 7.79 × 10⁻⁷ S/m at 0.8 wt%. The frequency exponent (<i>s</i>) was found to decrease with temperature for most compositions, which is consistent with the correlated barrier hopping (CBH) model. The 0.4 wt% CNPs sample exhibited anomalous non-monotonic s(T) behavior that is not consistent with a single CBH mechanism; the charge-trapping interpretation of this anomaly is plausible and electrode/contact effects were not excluded. The small-signal dielectric energy density estimate, when corrected to a common electric field (10 kV/m), is highest for the 0.4 wt% CNPs composition (1.883 × 10⁻³ J/m³ at 10 kV/m). However, this value is several orders of magnitude below that of commercial polymer film capacitors. The reported values are low-field small-signal estimates only. Nyquist plots confirmed non-Debye relaxation with minimum bulk resistance at 0.6 wt% CNPs. The 0.4 wt% CNPs composition optimizes ε′, while 0.8 wt% maximizes AC conductivity.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Zn additions on Sn-40Bi/Cu interfacial reactions: a microstructural, mechanical, and kinetic study for solder alloy design","authors":"Carolina de Siqueira Simioli,&nbsp;Guilherme Lisboa de Gouveia,&nbsp;Pedro Henrique Fernandes Oliveira,&nbsp;Xin Fu Tan,&nbsp;José Eduardo Spinelli","doi":"10.1007/s10854-026-18760-1","DOIUrl":"10.1007/s10854-026-18760-1","url":null,"abstract":"<div><p>The long-term reliability of solder joints in electronic assemblies is strongly governed by the evolution of interfacial intermetallic compounds (IMCs) formed between the solder alloy and the Cu substrate during service. In this study, the effects of Zn additions on the interfacial reactions, microstructural evolution, growth kinetics, and mechanical behavior of Sn–40Bi/Cu solder joints were investigated. Sn–40Bi, Sn–40Bi–2Zn, and Sn–40Bi–10Zn (wt.%) alloys were soldered onto Cu substrates and subjected to isothermal aging at 90, 105, and 120 °C for up to 360 h. The interfacial microstructure was characterized by optical microscopy, scanning electron microscopy coupled with energy-dispersive spectroscopy (SEM–EDS), electron backscatter diffraction (EBSD), and X-ray diffraction (XRD), while mechanical properties were evaluated by nanoindentation and tensile testing. The results showed that Zn significantly modified the interfacial reaction mechanism by suppressing the continuous growth of the Cu₆Sn₅ layer and promoting the formation of Cu–Zn intermetallic compounds, predominantly <i>γ</i>-Cu₅Zn₈ together with <i>ε</i>-CuZn₅, with only residual amounts of Cu₆Sn₅. The interfacial reaction layer evolved from a continuous Cu₆Sn₅ layer in the Sn-Bi/copper joint to a heterogeneous multiphase structure in the Sn–Bi–Zn/copper joints, leading to local variations in composition and mechanical properties. Although Zn additions reduced the initial tensile strength of the joints, they mitigate the degradation of tensile strength during prolonged thermal aging by limiting the growth of Cu₆Sn₅ during prolonged aging. The growth of the reaction layers followed diffusion-controlled kinetics, with the parabolic growth model providing the best agreement with the experimental data. These findings provide new insights into the role of Zn in controlling interfacial evolution and mechanical behavior of low-temperature Sn–Bi-based solder joints during thermal aging.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-026-18760-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and study of La2O3/rGO nanocomposite electrode materials: electrochemical and impedance analysis","authors":"Ayesha Sani,&nbsp;Bushra Parveen","doi":"10.1007/s10854-026-18543-8","DOIUrl":"10.1007/s10854-026-18543-8","url":null,"abstract":"<div><p>La₂O₃ and La₂O₃ /rGO supercapacitor electrodes were fabricated through wet chemical approach. To enhance the electrochemical performance, GO was initially prepared using a modified Hummer’s method, subsequently reduced to rGO, and then integrated with La₂O₃. The structural properties were confirmed by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR), which confirmed rGO/La₂O₃ structure and the presence of all possible bonding and functional groups information, respectively. Scanning electron microscopy demonstrated a morphological transition from granular La₂O₃ particles to a more uniform, layered structure, confirming integration of rGO. Elemental composition and purity were further validated by EDX spectroscopy. Electrochemical performance was systematically evaluated using cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), linear sweep voltammetry (LSV), and electrochemical impedance spectroscopy (EIS). The La₂O₃/rGO composite exhibited higher current response, distinct redox peaks, and enhanced pseudocapacitive and hybrid type behavior compared to pure La₂O₃. The optimized composite electrode achieved maximum specific capacitance of 769 Fg⁻¹ (cyclic voltammetry) and 350 Fg⁻¹ (via galvanostatic charge and discharge), alongside improvements in power density which we obtained 570 W/kg along with energy density value of 12 Wh/kg. Electrochemical impedance spectroscopy revealed an ultra-low lower interfacial charge transfer resistance (8.9 Ω) and reduced internal resistance. Furthermore, the composite maintained superior conductivity and charge transfer characteristics during cycling, unlike pure La₂O₃, which showed no semicircle in the Nyquist plot. These findings highlight the potential of La₂O₃/rGO composites as promising electrode materials for high-performance supercapacitor application.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-broadband luminescence in the visible-to-NIR region of Sb3+-doped Ca2SiS4 phosphors","authors":"Yasushi Nanai,&nbsp;Tsuyoshi Okuno","doi":"10.1007/s10854-026-18847-9","DOIUrl":"10.1007/s10854-026-18847-9","url":null,"abstract":"<div><p>Sb³⁺-doped Ca₂SiS₄ phosphors were synthesized by a solid-state reaction with NaCl flux in a vacuum, and their luminescence properties were systematically investigated. X-ray diffraction confirmed the formation of single-phase olivine-type Ca₂SiS₄. Under near-ultraviolet excitation, the phosphors showed ultra-broadband emission covering approximately 500–900 nm, with an emission peak located in the red spectral region and a maximum full width at half maximum (FWHM) of 178 nm. The emission peak shifted to longer wavelengths as Sb³⁺ concentration increased, whereas the FWHM showed a non-monotonic concentration dependence. To clarify the origin of the Sb³⁺ concentration-dependent photoluminescence (PL) behavior, low-temperature photoluminescence (LT-PL) and time-resolved photoluminescence (TRPL) measurements were performed. LT-PL spectra recorded at 20 K were successfully decomposed into four emission components. The temporal change of the TRPL spectra was explained by variations in the relative intensities of four superimposed emission bands, allowing evaluation of the decay features of each component. Based on the LT-PL, TRPL, and steady-state PL analyses, a luminescence model involving A_X and A_T emissions from two Sb³⁺ luminescence centers associated with the two crystallographically distinct Ca sites in Ca₂SiS₄ is proposed. The coexistence of these emission bands explains the unusually broad and red-shifted luminescence observed in Ca₂SiS₄:Sb³⁺.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Architecture-dependent microstructural and dielectric evolution of BaTiO3-based dielectrics from bulk ceramics to multilayer ceramic capacitors","authors":"Huizhan He,&nbsp;Saiwei Luan,&nbsp;Junhui Tan,&nbsp;Zhangping Wu,&nbsp;Lei Zhang","doi":"10.1007/s10854-026-18803-7","DOIUrl":"10.1007/s10854-026-18803-7","url":null,"abstract":"<div><p>Bulk ceramic specimens are widely employed to evaluate BaTiO₃-based dielectric formulations for multilayer ceramic capacitors (MLCCs). However, their relevance to microstructural evolution and electrical performance of cofired multilayer architectures remains unclear. In this work, bulk ceramics and Ni electrodes MLCCs were fabricated from the same BaTiO₃-based dielectric formulation and systematically compared as functions of sintering temperature and reducing atmosphere. TEM-EDS revealed that core–shell structure destruction occurred only at ≥1225 °C in the bulk ceramics but at 1200 °C in the MLCC dielectric layers. From 1175 to 1200 °C, the grain size increased from 384.5 to 901.2 nm in the MLCCs but only from 353.7 to 390.1 nm in the bulk ceramics. The upper sintering temperature compatible with controlled grain growth decreased from 1200 °C in the bulk ceramics to 1175 °C in the MLCCs. At 1175 °C, the MLCCs exhibited an effective dielectric constant of 2513, substantially exceeding the value of 1370 measured for the bulk ceramics, and satisfied the X7R (ΔC/ΔC_25 °C ≤ ±15%, −55 to 125 °C) specification at both 1150 and 1175 °C, whereas the bulk ceramics met this requirement only at 1150 °C. At an MLCC sintering temperature of 1175 °C, the dielectric constants increased progressively with H₂ concentration while the capacitance variation remained within the X7R, consistent with the combined contributions of grain growth promoted by the reducing atmosphere and polarization arising from defect dipoles involving oxygen vacancies. This study provides guidance for evaluating the performance of BaTiO₃-based dielectric formulations in MLCCs.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of annealing effect on CZTS thin film deposited by facile chemical bath method","authors":"Neha P. Chaware,&nbsp;Harshal P. Borse,&nbsp;Manohar R. Patil,&nbsp;Nanasaheb P. Huse","doi":"10.1007/s10854-026-18780-x","DOIUrl":"10.1007/s10854-026-18780-x","url":null,"abstract":"<div><p>Cu₂ZnSnS₄ (CZTS) thin films have attracted significant attention as promising candidate for photovoltaic applications due to their earth-abundant and environmentally friendly composition. In this study, a comprehensive analysis of CZTS thin films synthesized via a facile chemical bath deposition (CBD) method is presented. The films were deposited at 60 °C for a deposition time of 90 min. Both as-grown and annealed films were extensively characterized using UV–Vis. spectroscopy, energy-dispersive X-ray analysis (EDAX), field-emission scanning electron microscopy (FESEM), and X-ray diffraction (XRD) to evaluate their optical, elemental, morphological, and structural properties. UV–Vis. spectroscopy revealed strong absorption in the visible region, resulting in a band gap energy of 1.9 eV for the as-grown film and 1.8 eV after annealing, indicating the material’s suitability for solar energy conversion. EDAX analysis confirmed a Zn-rich composition, consistent with the formation of kesterite phase CZTS. FESEM images revealed the formation of nanoflakes on the film surface, leading to a porous morphology. Overall, the results provide insights into the structural quality, defect formation, and performance-related characteristics of the deposited CZTS thin films, highlighting their potential for photovoltaic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Concentration-dependent design of single-layer polyaniline-based microwave absorbers: synthesis, dielectric characterization, and thickness optimization","authors":"Engin Açıkalın","doi":"10.1007/s10854-026-18758-9","DOIUrl":"10.1007/s10854-026-18758-9","url":null,"abstract":"<div><p>Polyaniline (PANI) was incorporated into a two-component polysulfide matrix at 10 wt% and 20 wt% loading to isolate the effect of filler concentration on single-layer microwave absorption in the X-band (8.2–12.4 GHz). Complex permittivity of both composites and of the unfilled matrix was measured by the waveguide method, and a single-layer thickness optimization was performed for each formulation. Comparison with the unfilled matrix shows the two loadings act through different mechanisms: at 10 wt%, the real permittivity remains close to the binder (ε′ ≈ 3.9–4.1) while ε″ rises to 0.61–0.75, against 0.33–0.19 for the matrix; at 20 wt%, ε′ increases to 6.7–7.5 and dielectric relaxation appears near 10 GHz, with ε″ reaching 1.18. These trends are consistent with a percolation threshold between the two loadings, though additional intermediate compositions would be needed to confirm it. The deepest reflection loss was − 20.6 dB at 10 mm for the 10 wt% composite (11.48 GHz, bandwidth 1.79 GHz) and − 18.5 dB at 8 mm for the 20 wt% composite (10.70 GHz, ≈ 1.2 GHz); the shallower minimum at higher loading, despite larger ε′ and ε″, reflects a lower loss tangent (0.13 vs 0.18) and a poorer impedance match. Both optimal thicknesses correspond to the third-order quarter-wavelength condition, agreeing with measured permittivities to within 2%; the first-order condition, at 3.4 and 2.7 mm, yields minima of only about − 6 dB, since attenuation in such thin layers is insufficient for impedance matching. The loss tangent, rather than permittivity alone, therefore limits performance at thin geometries.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Roles of Sb2O3 in modulating DC ageing behavior of ZnO varistor ceramics","authors":"Qiyuan Ren,&nbsp;Yupeng Li,&nbsp;Haiyu Sun,&nbsp;Guilai Yin,&nbsp;Xuetong Zhao","doi":"10.1007/s10854-026-18812-6","DOIUrl":"10.1007/s10854-026-18812-6","url":null,"abstract":"<div><p>This work systematically studies the DC ageing behavior of Sb₂O₃‑modified ZnO varistor ceramics. The addition of Sb₂O₃ promotes the formation of Sb‑rich spinel phases at intergranular regions, which restrains ZnO grain growth and refines the ceramic microstructure, with the average grain size reduced from 18.71 to 7.33 μm. As a result, the breakdown field and nonlinear coefficient are enhanced to 268 V/mm and 75.3, respectively, while the leakage current density is lowered to 0.086 μA cm⁻². Under accelerated DC ageing, the Sb₂O₃-free sample fails from thermal runaway, while the Sb₂O₃-modified samples survive the full DC ageing period. Notably, the Sb₂O₃-modified samples show a clear polarity-dependent degradation. The breakdown field and nonlinear coefficient decrease far more severely in the reverse direction than in the forward direction relative to the DC ageing voltage, while the leakage current density shows a more pronounced increase in the reverse direction. This asymmetric degradation is further reflected in the Schottky barrier height of the representative S4 sample (0.75 mol% Sb₂O₃), which drops from 0.57 eV to 0.54 eV (forward) and 0.49 eV (reverse). Additionally, four dielectric relaxations are found in the electric modulus spectra, among which only the activation energy related to grain-boundary interface relaxation exhibits a significant reduction from 0.81 to 0.75 eV for sample S4 after DC ageing. These findings indicate that appropriate Sb₂O₃ addition enhances the electrical stability of ZnO varistor ceramics, and this work offers a promising route for tailoring polycrystalline ceramics for DC‑power‑based applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical properties of SnO2-based NTC thermistor ceramics sintered at 1100 °C assisted by BaO–CuO additives","authors":"Tongyu Zheng,&nbsp;Zhicheng Li,&nbsp;Chenyan Zhou,&nbsp;Tianren Ouyang,&nbsp;Hong Zhang","doi":"10.1007/s10854-026-18789-2","DOIUrl":"10.1007/s10854-026-18789-2","url":null,"abstract":"<div><p>Low-temperature sintering (LTS) of negative temperature coefficient (NTC) thermosensitive ceramics is of great significance for fabricating multilayer or miniaturized components, reducing energy consumption and enabling the use of lower-cost internal electrode metals, etc.. Herein, the Sb/Ti co-doped SnO₂-based ceramics (Sn_{0.94−<i>x</i>}Sb_0.06Ti_<i>x</i>O₂, <i>x</i> = 0, 0.02, 0.03, 0.04, 0.05, and 0.06, denoted as <i>x</i>TATO) were prepared by a conventional solid-state reaction method using BaO–CuO (BCO) as sintering aids. The introduction of BCO modifier reduced the sintering temperature of SnO₂-based ceramics to 1100 °C, which is approximately 200 °C lower than those of conventional CuO-added SnO₂-based ceramics. The prepared <i>x</i>TATO ceramics mainly have a rutile SnO₂ phase. All ceramics exhibit typical NTC characteristics. By changing the Ti doping content, the room-temperature resistivity of <i>x</i>TATO ceramics can be adjusted from 8.16 kΩ·cm to 242 kΩ·cm, and the corresponding NTC material constants (<i>B</i>_25/85 values) range from 2380 to 3996 K. Ti doping significantly improves the aging stability of the <i>x</i>TATO ceramics with the resistance drift rates ranging from −3.22% to −1.98% after aging at 125 °C in air for 500 h. The sintering behavior, conduction mechanism and aging characteristics of the BCO-modified <i>x</i>TATO ceramics were investigated based on the analysis of phase composition, elemental valence states and complex impedance spectra.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}