Journal of Materials Science: Materials in Electronics最新文献

{"title":"Optimization of electromagnetic wave absorption properties of Fe3O4/SBA-15","authors":"Tao Shen,&nbsp;Xiaoling Peng,&nbsp;Jing Li,&nbsp;Shan Tao,&nbsp;Jingcai Xu,&nbsp;Bo Hong,&nbsp;Xinqing Wang","doi":"10.1007/s10854-025-14846-4","DOIUrl":"10.1007/s10854-025-14846-4","url":null,"abstract":"<div><p>Fe₃O₄, possessing both dielectric and magnetic loss mechanisms, is an excellent microwave absorbing material. Nevertheless, the challenges posed by the poor impedance matching and narrow absorption bandwidth of pure Fe₃O₄ are significant. In this study, ordered mesoporous silica (SBA-15) was employed as a hard template, and Fe₃O₄/SBA-15 composites were synthesized through nano-impregnation. The results show that the impedance matching of the composites is effectively improved by increasing the content of SBA-15. In addition, the porous structure of SBA-15 extends the propagation distance of electromagnetic waves inside the material, thereby improving the microwave absorption performance of the composite material. Notably, when the molar ratio of Fe₃O₄ to SBA-15 is 10:13, the composite exhibits optimal microwave absorption properties, with a maximum reflection loss of − 35.21 dB and an effective absorption bandwidth of 5.44 GHz. Further analysis reveals that the microwave absorption performance of this composite primarily stems from the synergistic effect of dielectric and magnetic losses, including interfacial polarization, dipole polarization, and various ferromagnetic resonance loss mechanisms. This study provides new insights into the development of high-performance microwave absorbing materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Upconversion luminescence and Judd–Ofelt analysis of Er3+ doped NaSrVO4 inorganic phosphor","authors":"Meniak Khajuria,&nbsp;Sajad A. Bhat,&nbsp;Rohit Raina,&nbsp;Pankaj Biswas","doi":"10.1007/s10854-025-14860-6","DOIUrl":"10.1007/s10854-025-14860-6","url":null,"abstract":"<div><p>The development of nano-phosphors containing upconverting luminescent materials has demonstrated their potential applications in photovoltaics. In this context, this article explores the upconversion capabilities of NaSrVO₄ phosphor when activated by Er³⁺ ions. The NaSr_(1-<i>x</i>)VO₄:<i>x</i>Er³⁺ (0.01 ≤ <i>x</i> ≤ 0.04) phosphors were synthesized using a facile combustion method with urea as the fuel. Phase purity, investigated through powder X-ray diffraction, confirms the formation of a single-phase (monoclinic) material with a P2_1/n space group. The morphological and elemental composition of the phosphor were analyzed using transmission electron microscopy and X-ray photoelectron spectroscopy. The dopant, erbium, was found to be in the + 3 oxidation state. The direct bandgap of the synthesized phosphor is 3.69 eV for the doped sample. Upconversion photoluminescence was systematically studied, and the impact of dopant (Er³⁺) concentration on luminescent properties was extensively analyzed. The emission color of the synthesized phosphor falls within the green region of the spectrum and exhibits good color purity. Overall, the results suggest the potential application of the synthesized phosphor in the field of optoelectronic materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143925576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing the gas sensing of porous silicon by surface modification using non-thermal plasma","authors":"Noor Dhaief Hayif,&nbsp;Hasan A. Hadi,&nbsp;Intesar H. Hashim","doi":"10.1007/s10854-025-14867-z","DOIUrl":"10.1007/s10854-025-14867-z","url":null,"abstract":"<div><p>This study used a non-thermal atmospheric argon plasma jet (NTAAPJ) as an innovative technique for treating and altering porous silicon surfaces (PSi) and enhancing their performance as nitrogen dioxide (NO₂) gas sensors. To prepare the PSi layers, we used photo-electrochemical etching (PECE). To treat the surface of porous silicon samples for different durations, the NTAAPJ was used at a plasma voltage of 18 kV. The influence of treatment on the structural and morphological properties of PSi was studied. X-ray diffraction (XRD) analysis revealed a shift in the (111) diffraction peak to a lower angle, indicating a reduction in internal microstrain. Additionally, the crystalline size increased from 28.6 to 54.6 nm after 16 min of treatment, suggesting enhanced crystal growth and improved structural ordering. Field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) images revealed an expansion of pore diameter from 1.1 to 2.4 μm and a porosity percentage increase from 11 to 75% after treatment. At the same time, surface regularity and roughness values improved, indicating a positive effect on surface structure and physical properties. Raman spectra further indicated improved crystallinity, with a blue shift in the Raman band and increased intensity as the time of treatment increases. Meanwhile, the Fourier transform infrared (FTIR) results illustrate that the plasma treatment did not alter the peak position or create new chemical bonds. Energy dispersive spectroscopy (EDS) analysis indicated that the PSi includes silicon, oxygen, and carbon. The oxygen percentage increased from 0.3% to 21.1%, and the carbon percentage decreased from 21 to 14% after treatment. The sensitivity of both treated and untreated samples to 60 ppm of nitrogen dioxide (NO₂) was evaluated at three distinct working temperatures: room temperature (RT), 75 °C, and 125 °C. The samples’ maximum sensitivity was recorded at 75 °C, indicating its superiority over other temperatures in gas detection. The results demonstrated a progressive improvement in sensing capability as the treatment period increased.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143930039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crystal growth, spectroscopic investigation and z-scan analysis of novelly synthesized NLO active bis(2-amino-4,6-dimethoxypyrimidinium) 5-sulfosalicylate single crystal","authors":"M. Libina Blessy,&nbsp;D. Arul Dhas,&nbsp;I. Hubert Joe,&nbsp;G. Vinitha","doi":"10.1007/s10854-025-14765-4","DOIUrl":"10.1007/s10854-025-14765-4","url":null,"abstract":"<div><p>A novel organic single crystal bis(2-amino-4,6-dimethoxypyrimidinium) 5-sulfosalicylate (B2AD5SSA) was synthesized and examined through the FT-Raman, UV–Vis, single crystal X-ray diffraction and FT-IR investigations. The B2AD5SSA crystal affiliated to the triclinic with centrosymmetric space group P-1 was validated through single crystal X-ray diffraction (SXRD). The B3LYP/LANL2DZ basis set was employed in the density functional theory (DFT) for the quantum chemical calculations. The natural bond orbital (NBO) analysis provides a detailed study of the intermolecular interactions and stability of the B2AD5SSA molecule. To highlight the existence of different functional groups in the B2AD5SSA molecule, the FT-Raman and FT-IR spectral analysis were carried out. A graphical representation of the B2AD5SSA molecule’s charge distribution was provided by the frontier molecular orbital (FMO) and molecular electrostatic potential (MEP). The energy gap of B2AD5SSA was determined to be 5.33 eV. Reduced density gradient (RDG), interaction region indicator (IRI) and atoms in molecule (AIM) analyses were used to explore the N–H…O and O–H…O interaction within the B2AD5SSA molecule. Using UV–visible spectral analysis, the transmittance spectra and band gap energy of the title compound were measured and examined. Fluorescence spectral analysis has been used to examine the emission spectra at 407 nm, which was advantageous for the development of violet light-emitting devices. By employing TG–DTA analysis, the thermal stability of the B2AD5SSA crystal was calculated to be 192 °C. The hole-electron analysis was performed to demonstrate charge transfer within the molecule. Hirshfeld surface analysis and a two-dimensional fingerprint plot were used to examine the molecular surface contours and intermolecular interactions. The NLO activity of the B2AD5SSA molecule was investigated both theoretically and experimentally using the DFT and Z-scan techniques. The first-order hyperpolarizability (β) and third order susceptibility (χ⁽³⁾) of the B2AD5SSA was found to be 70.51*10^–30 esu and 6.58*10^–6 esu. While comparing the results of UV–visible, NLO, FMO and Z-scan with 5-sulfosalicylate based compounds, the compound B2AD5SSA shows strong NLO activity.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143930040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect structures in active nonlinear LiNbO3:Tb3+ single crystals with subthreshold terbium doping","authors":"N. V. Sidorov,&nbsp;M. N. Palatnikov,&nbsp;L. A. Bobreva,&nbsp;O. V. Palatnikova,&nbsp;P. P. Sverbil,&nbsp;A. Yu. Pyatyshev,&nbsp;M. K. Tarabrin,&nbsp;A. A. Teslenko","doi":"10.1007/s10854-025-14855-3","DOIUrl":"10.1007/s10854-025-14855-3","url":null,"abstract":"<div><p>Optical microscopy studies have demonstrated that the chemical composition of the Li₂O–Nb₂O₅–Tb₂O₃ melt has a significant effect on the macro- and microdomain configuration of the growth defect structure in the bulk of the nonlinear optical LiNbO₃ single crystal doped with subthreshold concentrations of the Tb³⁺ ions, which is promising as an active nonlinear laser medium for continuous-wave generation in the blue spectral range. In the frequency range of 1000–2000 cm⁻¹, second-order Raman lines were detected in LiNbO₃:Tb³⁺(0.1, 0.48, 2.21 wt%) crystals, the intensity and frequencies of which depend on the concentration of the Tb³⁺ ions. These lines are interpreted as manifestations of bound states of fundamental optical vibrations formed as a result of strong anharmonicity of vibrations and the presence of various types of structural defects in the crystal. It is shown that the presence of lines with frequencies of 3470, 3483, and 3486 cm⁻¹ in the IR absorption spectra of LiNbO₃:Tb³⁺(0.1, 0.48, 2.21 wt%) crystals in the region of OH-group stretching vibrations is due to the violation of the stoichiometry (Li/Nb values) of the crystal and the formation of complex defects (V_Li-OH). It is established that in the studied LiNbO₃:Tb³⁺ crystals, there are two times fewer V_Li point defects than in the congruent LiNbO₃ crystal.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The effects of nitrogen ions’ implantation on La0.5Ca0.5MnO3 nanocomposite electrode for high-performance supercapacitor applications","authors":"Imosobomeh L. Ikhioya,&nbsp;Agnes C. Nkele,&nbsp;Kamran Shahzad,&nbsp;Ernest O. Ejeh,&nbsp;Faith U. Ochai-Ejeh","doi":"10.1007/s10854-025-14859-z","DOIUrl":"10.1007/s10854-025-14859-z","url":null,"abstract":"<div><p>A solid-state synthesis approach was adopted in synthesizing La_0.5Ca_0.5MnO₃ nanocomposite materials. Nitrogen ions at dosages of 5 × 10¹⁴, 5 × 10¹⁶, and 5 × 10¹⁷ ions/cm³ were irradiated on the La_0.5Ca_0.5MnO₃ sample and characterized to determine their structure, morphology, elemental composition, optical characteristics, functional groups, and electrochemical features. The structural study revealed an orthorhombic crystal structure with an average crystallite size of about 16 nm. The surface morphology showed nanograins distributed throughout the surface while the basic elements that make up the composite before and after the irradiation were shown. The irradiated samples recorded higher absorbance and reduced energy band-gap values from 1.80 eV to 1.59 eV. Functional groups observed due to lattice vibrations were demonstrated in the FT-IR plots. Good cyclic behavior exhibiting maximum specific capacitance values of 468.75 and 937.52 F/g were evaluated from the CV and GCD tests, respectively. Findings from the synthesized nanocomposites show the potential application of the nanocomposites in optical and electrochemical devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143925575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of PTC and interface dynamics of core–shell BST@SiO2 fillers on the insulation properties of epoxy composites at different temperatures and electric fields","authors":"Taqi Ur Rahman,&nbsp;Xiangrong Chen,&nbsp;Tianyin Zhang,&nbsp;Jiale Song,&nbsp;Zelin Hong,&nbsp;Kai Yin,&nbsp;Muhammad Awais,&nbsp;Ashish Paramane","doi":"10.1007/s10854-025-14801-3","DOIUrl":"10.1007/s10854-025-14801-3","url":null,"abstract":"<div><p>This study explores an efficient encapsulation strategy to improve the dielectric insulation properties of epoxy (EP) composites. The integration of different concentrations of BST@SiO₂ into the EP matrix markedly enhances the overall performance of the composites, particularly under high-temperature conditions and diverse electric fields. The core–shell structure, where barium strontium titanate (BST) particles are coated with an insulating silica shell, serves to reduce DC electrical conductivity, prevent space charge accumulation, and improve DC breakdown strength. The silica coating restricts the movement of charge carriers, while the positive temperature coefficient (PTC) characteristics of BST further enhances insulation properties by transitioning to an insulative state near the Curie temperature. The electrical double-layer effect in the composite helps to suppress excessive charge injection through Coulombic repulsion, preventing the formation of high local electric fields, which are often a direct cause of electrical breakdown. This mechanism ensures higher breakdown strength by delaying the occurrence of critical local fields. The encapsulated BST@SiO₂ particles provide improved thermal stability, contributing to the composite’s ability to retain superior dielectric properties at elevated temperatures. The reported methodology for fabricating these nanocomposites offers valuable insights into developing EP-based materials with enhanced insulation properties, particularly for high-performance applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating reliability of Sn-35Bi-based solder paste in SAC305 CPU applications at elevated temperature and humidity","authors":"Vichea Duk,&nbsp;Ketra Heng","doi":"10.1007/s10854-025-14869-x","DOIUrl":"10.1007/s10854-025-14869-x","url":null,"abstract":"<div><p>The Sn-35Bi alloy, has emerged as a promising alternative for low-temperature, lead-free solder applications due to its advantageous properties, including low density, a melting point range of 138–170 °C, and cost-effectiveness. However, practical applications of Sn-Bi alloys require significant improvements in their properties and joint integrity, particularly addressing the brittleness of Bi and the propensity for microstructural coarsening under thermal aging and current stress. This study employs the Arrhenius and Peck’s model to evaluate long-term reliability of the Sn-35Bi-0.5Cu-0.02Ni (melting point 141–182 °C) solder alloy on SAC305 CPU ball grid array (BGA) applications at elevated humidity and temperature. For mechanical performance of the Sn-35Bi-0.5Cu-0.02Ni solder, vibration and shock testing was assessed, while microstructural evolution was analyzed to demonstrate electrical performance. Experimental results indicated significant aggregation of Bi in the Sn-Bi-based solder joints, forming coarse, block-like structures after 1000 h at the temperature of 46 °C and 90% relative humidity, with a notable increase in the intermetallic compound (IMC) layer thickness. Continued exposure for 2607 h revealed further coarsening of the Bi phase and doubling of the IMC thickness, but no cracks were detected in the substrate. In addition, electromigration effects were noted in the solder joint microstructures compared to those without current stress. Although the findings indicate a decline in reliability after prolonged exposure, the solder joints demonstrated functionality for over 5.5 years under typical room temperature conditions. It meets the functional and mechanical–electrical performance criteria, reinforcing its potential as a viable lead-free solder for low-temperature applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143930041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vanadium oxide as a passivating-carrier selective contact for silicon heterojunction solar cell application","authors":"Rajesh Kanakala,&nbsp;Rajesh Maurya,&nbsp;Jatindra Kumar Rath","doi":"10.1007/s10854-025-14847-3","DOIUrl":"10.1007/s10854-025-14847-3","url":null,"abstract":"<div><p>The potential of thermal evaporation-grown vanadium pentoxide (V₂O₅) as a passivating-carrier selective contact material for high-performance heterojunction crystalline silicon solar cells was examined in this work, with particular emphasis on the effects of film thickness from 1.5 nm to 4.5 nm on the characteristics of vanadium sub-oxide (V₂O_<i>x</i>) thin films and their passivation characteristics on n-type <i>c</i>-Si (111) Cz wafers. V₂O_<i>x</i> thin films were made by thermal evaporation at a chamber pressure of 5 × 10^–5 mbar, with different film thicknesses. The findings give an insight into the effect of film thickness on the electrical and surface passivation capabilities of V₂O_<i>x</i> films. With increasing layer thickness, electrical resistance was observed to rise while carrier concentration decreased, but a slight improvement in carrier mobility. The minority carrier lifetime values ranged from 64.07 ± 3.39 µs to 230 ± 4.30 µs and thicker films showed enhanced passivation. It is hypothesised that the formation of a sub-stoichiometric SiO_<i>x</i> interlayer containing fixed charges adds to the field-effect passivation mechanism. The analysis revealed that a 4.5 nm thick V₂O_<i>x</i> film had the best optoelectronic characteristics, an optical transmittance of above 90%, an electron concentration of 2.62 × 10¹³ cm⁻³ and a mobility of 40 cm²/V-s. This 4.5 nm thick V₂O_<i>x</i> film as a passivation layer gives a minority carrier lifetime of 230 ± 4.30 µs and an implied open-circuit voltage (i<i>V</i>_<i>oc</i>) of 652 ± 1 mV for a commercial n-type silicon wafer. A passivating contact solar cell has been fabricated for validating the passivation studies with an open-circuit voltage (<i>V</i>_<i>oc</i>) of 627 mV. These results are important for developing heterojunction silicon solar cell technology.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143925435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Retraction Note: Comparison of the effect of Cr3+ substituted Co–Cu and Cu–Co nano ferrites on structural, magnetic, DC electrical resistivity, and dielectric properties","authors":"B. Suryanarayana,&nbsp;P. V. S. K. Phanidhar Varma,&nbsp;P. S. V. Shanmukhi,&nbsp;M. Gnana Kiran,&nbsp;N. Murali,&nbsp;Tulu Wegayehu Mammo,&nbsp;Vemuri Raghavendra,&nbsp;D. Parajuli,&nbsp;Khalid Mujasam Batoo,&nbsp;Sajjad Hussain","doi":"10.1007/s10854-025-14870-4","DOIUrl":"10.1007/s10854-025-14870-4","url":null,"abstract":"","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}