Journal of Materials Science: Materials in Electronics最新文献_第2页

Efficient detection of H2 gas on ZnO-/SnO2-graphene nanohybrids: experimental and DFT study

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-19 DOI: 10.1007/s10854-024-14063-5

Sonal Rattan, Anjali Leal, Sukhbir Singh, Suresh Kumar, J. K. Goswamy

{"title":"Efficient detection of H2 gas on ZnO-/SnO2-graphene nanohybrids: experimental and DFT study","authors":"Sonal Rattan, Anjali Leal, Sukhbir Singh, Suresh Kumar, J. K. Goswamy","doi":"10.1007/s10854-024-14063-5","DOIUrl":"10.1007/s10854-024-14063-5","url":null,"abstract":"<div>In this research, we explored the hydrogen gas sensing properties of microwave-reduced graphene oxide (M-rGO) along with rGO-SnO₂ and rGO-ZnO nanohybrids. These nanohybrids were prepared through a microwave treatment process. Their structural and optical characteristics were analyzed using X-ray diffraction, field emission scanning electron microscopy, and UV-Visible spectroscopy, confirming the successful formation of graphene-metal oxide hybrid structures. The hydrogen gas detection performance of the rGO-SnO₂ and rGO-ZnO nanohybrids was evaluated by subjecting their thin-film sensing platforms to varying concentrations of hydrogen gas (from 50 ppm down to 0.1 ppm) at an operating temperature of 150 °C. The resistance-time behavior of the nanohybrids was monitored under both hydrogen exposure and normal conditions, with measurements taken using a Keithley 2461 source meter. Sensitivity measurements showed maximum values of 22.07%, 22.85%, and 79.39% for M-rGO, rGO-SnO₂, and rGO-ZnO platforms, respectively. These findings were supported by theoretical simulations based on density functional theory (DFT) performed with the Quantum ATK-Synopsis code (version 19.03). The study demonstrates the superior hydrogen sensing capability of the rGO-ZnO nanohybrid.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal excitation of carriers at tail states and recombination rate in hydrogenated amorphous silicon 氢化非晶硅中尾态载流子的热激发和重组率

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-18 DOI: 10.1007/s10854-024-14062-6

Chisato Ogihara

引用次数: 0

Analysis of the physical properties of MgB2 superconductor with Zn(NO3)2·6H2O addition

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-18 DOI: 10.1007/s10854-024-14069-z

Naki Kaya

{"title":"Analysis of the physical properties of MgB2 superconductor with Zn(NO3)2·6H2O addition","authors":"Naki Kaya","doi":"10.1007/s10854-024-14069-z","DOIUrl":"10.1007/s10854-024-14069-z","url":null,"abstract":"<div>MgB2 superconductors in the form of tablets doped with Zn(NO3)2·6H2O at different ratios (0–1–2–3% and 4%) by mass were produced in this study. The crystallographic, mechanical, electrical and magnetic properties of the obtained samples were investigated. For this purpose, X-ray diffraction analysis (XRD), microhardness analysis, temperature-dependent electrical resistance measurement (R-T), and magnetic moment change measurement depending on the magnetic field (m-H) were performed on the samples. The critical current densities (Jc) of the samples were calculated using the Bean Method and the Jc-H graph was created. Microhardness analysis was performed using the Vickers Method. Through the Vickers Method, Meyer’s Law, Proportional Sample Resistance (PSR) Model, Elastic/Plastic Deformation (EPD) Model and Indentation-Induced Cracking (IIC) Model were used from microhardness modeling. In the analyses, it was determined that plane peaks belonging to MgB2 were seen in all samples, the critical transition temperature (Tc) decreased depending on the increase in the doping ratio from 37.55 to 34.27 K, and there were widenings in the m-H curves. An increase in the Jc value at 0.32 T, depending on the doping ratio of Zn(NO3)2·6H2O, was observed from 3.01 × 101 to 3.23 × 103 A/cm2. It was also observed that all samples exhibited the reverse indentation size effect (RISE) behavior, and the samples became softer with the doping ratio.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impedance spectroscopy study in lead-free (0.75) Ba0.95Ca0.05Ti0.95Sn0.05O3/(0.25) Ni0.7Zn0.3Fe2O4 particulate composite 无铅 (0.75) Ba0.95Ca0.05Ti0.95Sn0.05O3/(0.25) Ni0.7Zn0.3Fe2O4 颗粒复合材料中的阻抗光谱研究

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-18 DOI: 10.1007/s10854-024-14016-y

Biman Kar, Pawan Kumar, Chandra Sekhar Mallam, Durga Prasad Sahu

{"title":"Impedance spectroscopy study in lead-free (0.75) Ba0.95Ca0.05Ti0.95Sn0.05O3/(0.25) Ni0.7Zn0.3Fe2O4 particulate composite","authors":"Biman Kar, Pawan Kumar, Chandra Sekhar Mallam, Durga Prasad Sahu","doi":"10.1007/s10854-024-14016-y","DOIUrl":"10.1007/s10854-024-14016-y","url":null,"abstract":"<div>Bi-phasic lead-free particulate composite of 75 wt.% Ba0.95Ca0.05Ti0.95Sn0.05O3—25 wt.% Ni0.7Zn0.3Fe2O4 (BTCS/NZFO) was synthesized by solid-state reaction method. The crystallographic phase formation of the composite was confirmed by the Rietveld refinement analysis of the X-ray diffraction data. Dielectric and impedance data of the composite sample were analyzed over a wide range of frequency and temperature domains. Maxwell–Wagner-type relaxation and thermally activated charge hopping were observed in the composite samples in frequency and temperature-dependent dielectric spectra. The impedance spectroscopy measurements revealed a non-Debye-like dielectric relaxation prevailing in the composite. It also confirmed the contribution of grain and grain boundary effect in the electrical properties of the composite with the absence of surface charge polarization. The frequency dependent conductivity behavior obeys Jonscher’s power law and confirms the presence of correlated barrier hopping (CBH) conduction in the composite. High dielectric constant (εr) with low loss (tan δ) makes this composite a promising candidate for capacitor and high-frequency device application.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-18 DOI: 10.1007/s10854-024-14060-8

Ezekiel Omotoso, Emmanuel Igumbor, Walter E. Meyer

{"title":"DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide","authors":"Ezekiel Omotoso, Emmanuel Igumbor, Walter E. Meyer","doi":"10.1007/s10854-024-14060-8","DOIUrl":"10.1007/s10854-024-14060-8","url":null,"abstract":"<div>Swift heavy ions, such as krypton ions, play a significant role in developing and enhancing the performance of various devices. In this study, the influence of Kr2+ on nitrogen-doped 4H-silicon carbide has been investigated using deep level transient spectroscopy (DLTS). Krypton ions, with an energy of 107 MeV, were used to irradiate the Au/Ni/4H-SiC Schottky barrier diodes (SBDs) at a fluence of 1 × 1010 cm–2 at room temperature (300 K). Before the irradiation of the samples, the electrical measurements revealed good rectifying behaviour. However, rectification properties of the Au/Ni/4H-SiC SBDs were completely lost after irradiation at a fluence of 1 × 1010 cm–2. Annealing was performed at 300 °C in flowing argon, and the current–voltage (I–V) and capacitance–voltage (C–V) revealed partial rectification. DLTS of the as-grown devices analyses revealed the presence of four deep level defects. After annealing the irradiated device, the DLTS spectra showed a reduction in the intensity of the E0.10 and the disappearance of the E0.12 as well as the E0.16 defects compared to that as-grown. Two defects with energies of 280 and 410 meV showed inverted peaks, as would have been expected from minority carriers trap instead of majority carriers, which led to confusion as the peaks were inverted. It was concluded that the peculiar characteristics of DLTS measurements on SBDs may be due to the extremely high value of the series resistance as well as the low capacitance. The results of this study provide insight into the behaviour of SBDs under extreme irradiation and can be used to improve the radiation tolerance of electronic devices made from SiC.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-14060-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Molecular insights on benzoic acid, 3-hydrazino-4-methyl-, ethyl ester-modified gold nanoparticles for improved SERS sensing and photocatalytic degradation of dye contaminants

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-18 DOI: 10.1007/s10854-024-14048-4

M. Amalin Sobi, M. R. Bindhu, D. Usha, Mansour Gatasheh, Ashraf Atef Hatamleh, M. Umadevi

{"title":"Molecular insights on benzoic acid, 3-hydrazino-4-methyl-, ethyl ester-modified gold nanoparticles for improved SERS sensing and photocatalytic degradation of dye contaminants","authors":"M. Amalin Sobi, M. R. Bindhu, D. Usha, Mansour Gatasheh, Ashraf Atef Hatamleh, M. Umadevi","doi":"10.1007/s10854-024-14048-4","DOIUrl":"10.1007/s10854-024-14048-4","url":null,"abstract":"<div>This study reports the biosynthesis of gold nanoparticles (AuNPs) for the dual purposes of sensing and degrading organic dye pollutants in textile wastewater. Fruit extracts of Averrhoa carambola (AC) and Morus alba (MA) were used as reducing and stabilizing agents in the biosynthesis of AuNPs. Spherical MA-AuNPs and AC-AuNPs measured 16 nm and 21 nm, respectively, with characteristic surface plasmon resonance peaks at 541 nm and 543 nm. FTIR and Raman spectroscopy revealed functional group modifications involved in bioreduction. Density Functional Theory (DFT) calculations were employed to investigate the molecular interaction between benzoic acid-3-hydrazino-4-methyl-ethyl ester (C10H14N2O2) and Au2 clusters, elucidating the enhanced inhibitory action attributed to AC- and MA-extracts, as confirmed by GC–MS analysis. The C10H14N2O2-functionalized AuNPs'performance as a Surface-Enhanced Raman Scattering (SERS) sensor and photocatalytic substrate was investigated using commercial dyes (CR, MB, Rh B, and CV) in wastewater.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Functionalized carbon nanotube-based biosensor for highly sensitive detection of cardiac troponin I 高灵敏度检测心肌肌钙蛋白 I 的功能化碳纳米管生物传感器

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-17 DOI: 10.1007/s10854-024-14037-7

Emily M. Y. Chow, K. L. Foo, S. J. Tan, Subash C. B. Gopinath, M. Kashif, C. Y. Heah, Y. M. Liew, Jia-Chun Lim, Sing-Mei Tan

{"title":"Functionalized carbon nanotube-based biosensor for highly sensitive detection of cardiac troponin I","authors":"Emily M. Y. Chow, K. L. Foo, S. J. Tan, Subash C. B. Gopinath, M. Kashif, C. Y. Heah, Y. M. Liew, Jia-Chun Lim, Sing-Mei Tan","doi":"10.1007/s10854-024-14037-7","DOIUrl":"10.1007/s10854-024-14037-7","url":null,"abstract":"<div>Heart attacks are increasingly affecting young adults, a trend driven by unhealthy lifestyles and stress. This study leverages a biosensor based on functionalized carbon nanotubes (fCNT) to enhance the detection of Cardiac Troponin I (cTnI), a critical biomarker for heart attacks. The carbon nanotubes were functionalized via surface hydroxylation using (3-aminopropyl) triethoxysilane (APTES), followed by the addition of aldehyde groups with glutaraldehyde (GA). This fCNT coating was applied to the surface of an interdigitated electrode (IDE). Each step of the functionalization process was confirmed through impedance measurements, ensuring accurate modification of the IDE. The detection of cTnI utilized non-Faradaic modes, contributing to the system’s specificity. The limit of detection (LOD) was determined to be 0.47366 nM, underscoring the IDE’s precise targeting of cTnI. The system also demonstrated outstanding reproducibility and repeatability. Overall, this biosensor system presents a highly sensitive, selective, and dependable approach for detecting cTnI, offering substantial promise for enhancing clinical diagnostics.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of substrate temperature on the microstructural and optical properties of chemical molecular beam deposited sb2s3 films 基底温度对化学分子束沉积 sb2s3 薄膜微观结构和光学特性的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-17 DOI: 10.1007/s10854-024-13999-y

T. M. Razykov, К. M. Kuchkarov, M. S. Tivanov, L. S. Lyashenko, D. Z. Isakov, R. R. Khurramov, Z. Makhmudov, A. N. Olimov, M. Pirimmetov, P. A. Sivtsova, R. T. Yuldoshov, L. Schmidt-Mende, K. F. Shakhriev, Sh. B. Utamuradova, J. G. Bekmirzoyev

{"title":"Effect of substrate temperature on the microstructural and optical properties of chemical molecular beam deposited sb2s3 films","authors":"T. M. Razykov, К. M. Kuchkarov, M. S. Tivanov, L. S. Lyashenko, D. Z. Isakov, R. R. Khurramov, Z. Makhmudov, A. N. Olimov, M. Pirimmetov, P. A. Sivtsova, R. T. Yuldoshov, L. Schmidt-Mende, K. F. Shakhriev, Sh. B. Utamuradova, J. G. Bekmirzoyev","doi":"10.1007/s10854-024-13999-y","DOIUrl":"10.1007/s10854-024-13999-y","url":null,"abstract":"<div>In this work, SbxSy thin films were grown on glass substrates for the first time using the chemical molecular beam deposition method in the atmospheric pressure hydrogen flow. The structural, morphological and optical properties of SbxSy thin films grown at different substrate temperatures of 300 °C, 350 °C, 400 °C and 450 °C were studied. XRD results showed that the SbxSy thin films grown at different substrate temperatures have an orthorhombic crystal structure. Phase analysis indicated a weakening of Sb-S bonds with increasing substrate temperature. Also, the grain sizes of all obtained thin films ranged from 0.5 to 3 µm. The increase in temperature caused the grains to grow and the spaces between them to increase. Optical experiments reveal that as the substrate temperature increases, the optical band gap energy of the films increases from 1.52 eV to 1.73 eV, as well as an increase in the Urbach energy from 0.11 eV to 0.44 eV. The experimental values of the band gap for Sb2S3 films are near the optimum value for photovoltaic conversion.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142826232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlled synthesis of Mn-doped ZnO nanoparticles for low-frequency Di-electric devices 用于低频双电源器件的掺锰氧化锌纳米粒子的可控合成

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-17 DOI: 10.1007/s10854-024-14034-w

Muhammad Sajid, Abdur Raheem, Muhammad Mudasser, Sidra Shujah, Muhammad Adil, Muhammad Nouman Khan, Sufaid Shah

引用次数: 0

CO2 photoconversion using photocatalyst of TiO2 thin films deposited by sputtering technique 利用溅射技术沉积的二氧化钛薄膜光催化剂实现二氧化碳光转化

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-17 DOI: 10.1007/s10854-024-14042-w

M. R. Alfaro Cruz, O. Ceballos-Sanchez, G. A. Rodríguez-Rocha, L. M. Torres-Martínez

{"title":"CO2 photoconversion using photocatalyst of TiO2 thin films deposited by sputtering technique","authors":"M. R. Alfaro Cruz, O. Ceballos-Sanchez, G. A. Rodríguez-Rocha, L. M. Torres-Martínez","doi":"10.1007/s10854-024-14042-w","DOIUrl":"10.1007/s10854-024-14042-w","url":null,"abstract":"<div>TiO2 thin films were used as photocatalysts in CO2 photoconversion to solar fuels under UV irradiation. The films were deposited via sputtering while varying the working pressure for each deposition and could produce CH2O2 and CH3OH. According to Raman results, the films Ti-1 (3.87 Pa) and Ti-2 (3.73 Pa) deposited at high working pressure have a higher contribution of brookite phase compared with the films Ti-3 (3.47 Pa) and Ti-4 (3.33 Pa) obtained at low working pressure. Likewise, a higher presence of the brookite phase increases the atomic concentration of C–O bonds and −OH groups on the film surface, which reaches the CO2 photoconversion, as the TiO2 capacity to adsorb CO2 on the surface is determined by the O and C species present in the film. Therefore, the films Ti-1 and Ti-2, deposited at high working pressures and significantly contributing to the brookite phase, can produce 0.56 and 0.94 μmol of CH3OH, respectively. Meanwhile, according to the Raman and XPS results, the highest formic acid production was obtained from the Ti-3 and Ti-4 films, which show a less brookite phase presence and a higher contribution of O2− ions in TiO2.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142826229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0