Journal of Materials Science: Materials in Electronics最新文献

{"title":"Highly crystalline poly o-chloroaniline-AgCl spherical nanocomposite thin film as an efficient light-capturing material for optoelectronic devices","authors":"Mohamed Rabia,&nbsp;Amira Ben Gouider Trabelsi,&nbsp;Fatemah H. Alkallas,&nbsp;Tahani A. Alrebdi","doi":"10.1007/s10854-024-13799-4","DOIUrl":"10.1007/s10854-024-13799-4","url":null,"abstract":"<div><p>The creation of advanced optoelectronic materials with innovative photon-trapping capabilities is a promising area of research. A highly crystalline poly o-chloroaniline-AgCl spherical nanocomposite (POCA-AgCl S-nanocomposite) has been synthesized and employed as a light-sensing material in the UV to near-IR regions. This composite is fabricated using a one-pot method, demonstrating significant potential as an effective light-capturing material for optoelectronic devices. This nanocomposite features excellent absorbance across the optical spectrum, an ideal bandgap of 1.7 eV, and high porosity with spherical nanoparticles approximately 150 nm in size. The POCA-AgCl S-nanocomposite thin film is effective for light sensing and capture across a broad optical spectrum, ranging from IR to UV. Sensitivity to incident photons was tested using linear sweep voltammetry within a potential range of -2.0 to 2.0 V. The resulting current density (J_ph) showed how well the device responded to light and detected incoming photons. The photoresponsivity (R) values followed the changes in J_ph across different photon energies and wavelengths, with the best R values of 0.8 mA/W at 3.6 eV (340 nm) and 0.78 mA/W at 2.8 eV (440 nm). These values decreased with lower photon energies, reaching a minimum at 1.7 eV (730 nm). Similarly, the D values ranged from 0.18 × 10⁹ Jones at 3.6 eV to 0.17 × 10⁹ Jones at 2.8 eV, decreasing to 0.09 × 10⁹ Jones at 730 nm. Notably, the high sensitivity across the entire optical spectrum highlights the P<i>O</i>CA-AgCl S-nanocomposite thin film’s promise as a material for light capture and sensing across a wide range of optical spectra. Given its great stability, low-cost production, and suitability for mass production, this fabricated optoelectronic device is a promising candidate for industrial applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All inorganic lead-free perovskite Cs2SnI6-based broadband photodetector for optically encrypted data communication","authors":"Manoj Kumar,&nbsp;Aditya Yadav,&nbsp;Govind Gupta,&nbsp;Sushil Kumar","doi":"10.1007/s10854-024-13872-y","DOIUrl":"10.1007/s10854-024-13872-y","url":null,"abstract":"<div><p>Metal halide perovskites have immense potential to revolutionize the semiconducting material horizon. However, most of the prominent perovskite materials face the issue of lead toxicity and air-ambient stability. One of the prominent alternates to Lead (Pb) is Tin (Sn), whereas Sn-based double perovskite (Cs₂SnI₆) is air stable. A one-step process is adopted for the synthesis of Cs₂SnI₆. XRD results confirms the synthesis of Cs₂SnI₆ with significant diffraction peak corresponds to (222) plane. Also, Spin-coated thin film shows same phase of Cs₂SnI₆ as powder material. Stability of the thin film analysed by XRD, which infers that the thin film is for 7 days and after 30 days. Furthermore, the vibrational properties of the Cs₂SnI₆ thin film are characterised by Raman spectroscopy. Raman spectra confirm the Cs₂SnI₆ double perovskite as its <i>A</i>_1g, <i>E</i>_g and <i>F</i>_2g are Sn–I symmetric stretching, Sn–I asymmetric stretching and I–Sn–I asymmetric bending inside the [SnI₆]²⁻ octahedral are observed, respectively. From SEM micrograph, the average grain size of 362 nm with FWHM 268 nm is evaluated for the as deposited thin film. Also, Cs₂SnI₆ thin films are incorporated for Cs₂SnI₆/Si heterojunction diode and its <i>I</i>–<i>V</i> characteristics are analysed. Also, photodetector (PD) is fabricated with Ag/Cs₂SnI₆/Ag device configuration. Photodetection measurements exhibits that fabricated PD device can operate as broadband PD. The characteristic parameters of the fabricated PD are evaluated. Distinguishable current states under the illumination of UV, Vis, and NIR spectra offer the potential applications of PD as data decryption device in optically encrypted data communication.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis, XRD, spectral, photoluminescence, optical, electrical conductivity, and dielectric studies on melamine – melaminium 2-acetyl benzoate dihydrate","authors":"S. Akshay Kalyan,&nbsp;S. Elangovan,&nbsp;R. Karthick,&nbsp;N. Kanagathara,&nbsp;M. K. Marchewka,&nbsp;J. Janczak","doi":"10.1007/s10854-024-13671-5","DOIUrl":"10.1007/s10854-024-13671-5","url":null,"abstract":"&lt;div&gt;&lt;p&gt;A novel nitrogen rich energetic salt Melamine-melaminium 2-acetyl benzoate dihydrate (MMH&lt;sup&gt;+&lt;/sup&gt;AB&lt;sup&gt;−&lt;/sup&gt;2) has been grown by slow evaporation method at room temperature. Single crystal X-ray diffraction studies reveals that the grown synthesized salt crystallizes in the centrosymmetric space group `c 2yc’ of the monoclinic system. The lattice parameters were established as &lt;i&gt;a&lt;/i&gt; = 12.286(3) (Å), &lt;i&gt;b&lt;/i&gt; = 18.934(4) (Å), &lt;i&gt;c&lt;/i&gt; = 18.515(4) (Å), &lt;i&gt;α&lt;/i&gt; = &lt;i&gt;γ&lt;/i&gt; = 90 &lt;span&gt;(^{circ} {text{AA}})&lt;/span&gt;, and &lt;i&gt;β&lt;/i&gt; = 95.26 &lt;span&gt;((3)^{circ} {text{AA}})&lt;/span&gt;, volume of the unit cell &lt;i&gt;V&lt;/i&gt; = 4288.9 (15) (Å)&lt;sup&gt;3&lt;/sup&gt;. The intermolecular hydrogen bond N–H···N, N–H···O, C-H···O, and O–H···O type interactions stabilize the structure and lead to the three-dimensional network. Fourier Transform Infrared and Raman Spectra were used to study the compound's structural groups. FT-NMR studies confirm the structure of the grown MMH&lt;sup&gt;+&lt;/sup&gt;AB&lt;sup&gt;−2&lt;/sup&gt; crystal. The optical properties of the crystal were investigated using UV–Visible spectroscopy measurements. In the UV region, excitation begins at 200 nm, with the first absorption peak observed at a wavelength of 272.53 nm, followed by a second peak at 281.41 nm. The cut-off wavelength is 300 nm. The theoretical and experimental refractive index values are 2.84 and 1.69, respectively. The energy band gap value obtained from Tauc’s plot from UV–Vis data is 4.070 eV. Optical studies, such as refractive index and band gap measurements, were conducted to assess the material’s transparency. HOMO–LUMO transitions and its energy gap are computed to be 5.614 eV and other related molecular properties have also been calculated to reveal the optical properties. In the PL study, excitation starts at a wavelength of 350 nm and the emission peak occurs at 387.94 nm, located in the ultraviolet region. Natural Bond Orbital (NBO) analysis has been performed on MMH&lt;sup&gt;+&lt;/sup&gt;AB&lt;sup&gt;−2&lt;/sup&gt; compound to analyze the stability of the molecule arising from hyperconjugative interactions and charge delocalization. The highest stabilization energy, calculated to be 173.12 kcal/mol, is for the interaction between the lone pair on the N11 atom and the antibonding orbital of the C5 atom and 124.34 kcal/mol is for the interaction between the lone pair on the N3 atom and the antibonding orbital of the C5 atom. Molecular Electrostatic Potential (MEP) has been performed by DFT -B3LYP/6-311+G (d, p) basis set and the total electron density of the molecule ranges from -7.529 × 10&lt;sup&gt;–2&lt;/sup&gt; to + 7.529 × 10&lt;sup&gt;–2&lt;/sup&gt; e.s.u.. Dielectric studies further supported its suitability for electronic applications by highlighting its dielectric constant and loss factor. Electrical conductivity tests demonstrated the compound's potential as a semiconductor material. Additionally, the crystal packing behavior of MMH&lt;sup&gt;+&lt;/sup&gt;AB&lt;sup&gt;−2&lt;/sup&gt; was analyzed statistically using Hirshfeld Surface Analysis and the mo","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Voltage controlled magnetic properties and perpendicular magnetic anisotropy of Co2FeSi alloy thin films","authors":"Jiaming Mei,&nbsp;Jagadish Kumar Galivarapu,&nbsp;Shangqian Wang,&nbsp;Buyun Huang,&nbsp;K. Kamala Bharathi,&nbsp;Ke Wang","doi":"10.1007/s10854-024-13849-x","DOIUrl":"10.1007/s10854-024-13849-x","url":null,"abstract":"<div><p>A series of Pt/Co₂FeSi/MgAl₂O₄/Pt thin films with Co₂FeSi thicknesses ranging from 4.5 to 6 nm are constructed to evaluate the influence of applied voltage on magnetic coercivity. It is found that the change in coercivity is around 50.04% at an applied voltage of 16 V for a 5.5 nm thin film, but increases significantly to 72.24% for a 6 nm thin film. We show evolution of perpendicular magnetic anisotropy (PMA) properties of Co₂FeSi amorphous thin films with varying thickness. The polarization of External Hall Effect (EHE) and Magneto-Optic Kerr Effect (MOKE) loops match well with magnetic hysteresis. The EHE coefficient R_s rises from 2.0 × 10^–10 to 5.5 × 10^–10 Ω cm/G with increase in thickness from 4 nm to 6.5 nm, respectively. The voltage controlled the magnetic properties of Co₂FeSi thin films might be beneficial in the development of low-power magnetic tunnel junctions [MTJs].</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile synthesis of hierarchical CuO flowers with superior photocatalytic activity and supercapacitor performance","authors":"V. H. Bankar,&nbsp;A. K. Goswami,&nbsp;P. D. Jolhe,&nbsp;Sagar D. Balgude,&nbsp;P. V. Raut,&nbsp;Vinayak V. Kadam,&nbsp;Santosh J. Uke,&nbsp;Satish P. Mardikar","doi":"10.1007/s10854-024-13860-2","DOIUrl":"10.1007/s10854-024-13860-2","url":null,"abstract":"<div><p>In this work, we are reporting a simplistic approach for the synthesis of copper oxide (CuO) flowers (CFs) by using chemical precipitation method. The physicochemical characterization of as-synthesized CFs has been carried by FE-SEM (field emission scanning electron microscopy), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), FT-IR (Fourier Transform Infrared Spectroscopy, BET surface area and UV–Visible spectrophotometer. XRD results confirmed the monoclinic crystallization of CFs. Scanning electron micrograph (SEM) analysis revealed that as-synthesized CFs exhibits flower-like morphology and are uniformly fashioned exhibiting the high surface area of 72 m² g⁻¹. The as-synthesized CFs were further examined for their photocatalytic activities and supercapacitor (Sc) performance. The as-synthesized CFs were able to completely degrade the Rhodamine B (RhB) and Methylene blue (MB) dyes within merely 100 and 80 min, respectively. The electrochemical analysis demonstrated that CFs exhibit superior electrochemical properties with a high specific capacitance of 500.1 Fg⁻¹ at 5 mVs⁻¹ and an energy density (Ed) of 18.5 Whkg-1 with 96% capacity retention after 2000 cycles. Thus, the overall results of the present study suggest that CFs have extensive potential for photocatalytic activity and energy storage.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM) studies on Cr/Ni nanodot arrays deposited using innovative nano-stencil method","authors":"Sonali Pradhan,&nbsp;Srinibas Satapathy,&nbsp;Maheswar Nayak,&nbsp;Jyoti Ranjan Mohanty,&nbsp;Saroj Kumar Mishra,&nbsp;Shovan Kumar Majumder","doi":"10.1007/s10854-024-13829-1","DOIUrl":"10.1007/s10854-024-13829-1","url":null,"abstract":"<div><p>Nanodot arrays of Nickel (Ni) on Chromium (Cr), [Cr in two forms i. e. (Cr dot) and Cr (layer)] were fabricated by electron beam evaporation technique using nano-stencil. The deposition of a periodic dot pattern was confirmed through atomic force microscopy (AFM) imaging. The nano magnetic properties of the Cr/Ni nanodot arrays were probed using both Magnetic Force Microscopy (MFM) and Magneto-Optical Kerr Effect (MOKE) magnetometer. MOKE measurements unveiled saturated hysteresis with the exchange bias effect for the in-plane configuration and a minor hysteresis loop for the out-of-plane configuration in the Cr/Ni nanodot system. The experimental results were found to be in good agreement with the theoretical Stoner-Wohlfarth (SW) model. Additionally, the exchange bias effect was also observed in the Cr (thin film)/Ni (nanodot) system for both the in-plane and out-of-plane configurations, showing the dominating behavior of the Cr layer over the Ni dots due to its continuous layer and higher thickness. The observation of exchange bias properties was also verified through MFM measurements conducted with both positive and negative in-plane magnetic fields. Hence, this straightforward nano-stencil method holds significant promise for the streamlined production of patterned AFM/FM arrays enabling the comprehensive study of exchange bias phenomena. The magnetic properties of the Cr/Ni structure can be manipulated by depositing Cr either in nanodot form or in continuous layer form.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13829-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved gas-sensitive properties for ethanol and acetone in Zn-doped CoTiO3 nanoparticles","authors":"Wenzhao Zhang,&nbsp;Ruqu Han,&nbsp;Bingjie Cheng,&nbsp;Yishu Xian,&nbsp;Hongbo Li,&nbsp;Jun Xiang,&nbsp;Yamei Zhang","doi":"10.1007/s10854-024-13802-y","DOIUrl":"10.1007/s10854-024-13802-y","url":null,"abstract":"<div><p>Appropriate element doping is an important means to improve gas response. Pure and Zn-doped CoTiO₃ nanoparticles were fabricated by a simple sol–gel method and their gas response to ethanol and acetone was studied. Compared with pure CoTiO₃ nanoparticles, particle dispersion, specific surface area, oxygen vacancy defects, and gas-sensitive properties of Zn-doped CoTiO₃ nanoparticles are optimized and improved. With the increase of Zn doping concentration, the aggregates composed of irregular nanoparticles disperse loosely and the oxygen vacancy defects on the CoTiO₃ nanoparticles’ surface accordingly increase. The optimum operating temperature of Zn-doped CoTiO₃ nanoparticles is slightly reduced from 286 to 260 °C. CoTiO₃ nanoparticles with Zn doping concentration of 0.05 especially show excellent gas-sensing properties. The sensitivities of Co_0.95Zn_0.05TiO₃ nanoparticles to 50 ppm ethanol and acetone are as high as 125.8 and 143.4, increased to 1.98 and 1.74 times higher than those of pure CoTiO₃ nanoparticles. The linear fitting of logarithmic relationship between sensitivity and concentration shows that Zn-doped CoTiO₃ can accurately detect low concentration (&lt; 100 ppm) of ethanol and acetone. The improvement of gas response of Zn-doped CoTiO₃ nanoparticles is proposed to attribute to the synergistic effect of the agglomeration state of irregular particles and abundant oxygen vacancies on the surface due to Zn doping.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The dielectric adjustment in SiCf/mullite composites limited carbon content by in situ growth SiO2 layer","authors":"Linhan Jing,&nbsp;Fa Luo,&nbsp;Haijun Pan,&nbsp;Liuchao Zhang,&nbsp;Lechun Deng,&nbsp;Yulong Xue,&nbsp;Xinyi Wang","doi":"10.1007/s10854-024-13772-1","DOIUrl":"10.1007/s10854-024-13772-1","url":null,"abstract":"<div><p>\u0000Recently, SiC-continued fiber-reinforced ceramic matrix composites were widely used in high-temperature absorbing materials. However, the excessive carbon content indicated the deteriorative absorbing property. To solve the impedance mismatching of the SiC matrix and increase the charge accumulation at the multi-phase interface, SiC_f/mullite composites were prepared in this paper by using the sol–gel method. The introduction of mullite matrix without free carbon improved impedance matching characteristics. The strong bonding between the in situ grown SiO₂ layer and the mullite matrix caused by high temperature induced the Maxwell–Wagner effect, which effectively optimized the absorbing performance. The complex dielectric constant of the composite increased with higher sintering temperatures. The highest reflection loss reached − 23.1 dB at the sintering temperature of 1100 °C. With the two-step drying process, the porosity was reduced to 16.1% and the density increased. The crystallinity and density of the mullite matrix increased in the rising sintering temperatures, with the highest bending strength reaching 157.89 MPa for composites sintered at 1100 °C.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical spectroscopy of Nd3+-doped cadmium-rich borate glasses for near-infrared laser applications","authors":"W. Romero-Romo,&nbsp;O. Soriano-Romero,&nbsp;U. Caldiño,&nbsp;S. Carmona-Téllez,&nbsp;R. Lozada-Morales,&nbsp;Sergio A. Tomás,&nbsp;A. N. Meza-Rocha","doi":"10.1007/s10854-024-13792-x","DOIUrl":"10.1007/s10854-024-13792-x","url":null,"abstract":"<div><p>The structural and spectroscopic properties of Nd³⁺-activated cadmium-rich borate (inverted) glasses are analyzed for near-infrared laser applications. The evaluation of the optimal glass-emitting sample by the Judd–Ofelt (JO) theory revealed JO parameter values of 4.56 × 10^–20 cm² (Ω₂), 2.56 × 10^–20 cm² (Ω₄), and 3.84 × 10^–20 cm² (Ω₆). The Ω₂ value, along with the experimental oscillator strength, suggested that the cadmium-rich borate glass could provide a more asymmetrical Nd³⁺ environment than other borate glasses like lithium-strontium-zinc, sodium-calcium, and lithium-lead-aluminum. In addition, the quality spectroscopy factor (χ = Ω₄/Ω₆) of 0.67 suggested that the ⁴F_3/2 → ⁴I_11/2 emission could be more suitable for laser applications. The stimulated emission cross-section (<i>σ</i>_p), theoretical quantum yield (<i>η</i>_Q), gain bandwidth (<i>σ</i>_p × Δ<i>λ</i>_em), and optical gain (<i>σ</i>_p × <i>τ</i>_rad) laser parameters were close to those reported in sodium-calcium-borate, zinc-aluminum-barium-borate, and bismuth-borate glasses, while the non-radiative rate (<i>W</i>_NR) and emission intensity saturation (<i>I</i>_S) resulted to be lower. The emission spectra, under 808 nm laser excitation, displayed the featured neodymium ⁴F_3/2 → ⁴I_9/2,_11/2,_13/2 transitions, being the ⁴F_3/2 → ⁴I_11/2 (1058 nm) transition the more dominant one, in agreement with the χ parameter value. Nd³⁺ contents higher than 1.4 mol% led to emission quenching due to the increment of the cross-relaxation and/or energy migration rate. Such processes, according to the Inokuti–Hirayama model, were mainly mediated by electric dipole–dipole interactions within Nd–Nd clusters.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13792-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Study of Electrical Conductivity and Dielectric Relaxation in the Organic Ferroelectric Diisopropylammonium Iodide (dipaI)","authors":"Mamataj Khatun,&nbsp;Ekramul Kabir","doi":"10.1007/s10854-024-13845-1","DOIUrl":"10.1007/s10854-024-13845-1","url":null,"abstract":"<div><p>In this work, we delve into the dielectric response and electrical conductivity behavior of the innovative organic ferroelectric Diisopropylammonium Iodide (dipaI), with a focus on power dispersion and the universal relaxation law. We employ impedance spectroscopy, dielectric relaxation, and AC conductivity analyses across a broad spectrum of temperatures (343 K to 443 K) and frequencies (1 kHz to 20 MHz). Using the Maxwell–Wagner capacitor model, we elucidate the complex impedance using an equivalent circuit. In the equivalent circuit, elements like resistors and capacitors are arranged in a series and parallel configuration to represent the dielectric and conductive characteristics of the material. By analyzing the impedance spectrum using this model, we distinguish between the contributions from grain interiors and grain boundaries. The investigation of dielectric relaxation involves the importance of the Havriliak-Negami (HN) formula to interpret experimental findings. Unlike simpler models like the Debye relaxation, which assumes a single, discrete relaxation time, the HN formula accounts for a distribution of relaxation times, providing a more nuanced description of how polarization evolves over time. Additionally, the universal power law utilizes the parameter 'n' to describe the behavior of the electrical conductivity on the frequency, which is predicated on the hopping of charge carriers over potential barriers.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}