Journal of Materials Science: Materials in Electronics最新文献

{"title":"Development of a durable and stable optical fiber probe using polyvinyl alcohol hydrogel for enhanced sensing applications","authors":"Kavita Sharma,&nbsp;Rajneesh Kumar Verma","doi":"10.1007/s10854-025-14231-1","DOIUrl":"10.1007/s10854-025-14231-1","url":null,"abstract":"<div><p>This research outlines the creation of a robust and long-lasting metal oxide-coated optical fiber probe, specifically utilizing tin oxide nanoparticles (SnO₂ NPs) integrated with polyvinyl alcohol (PVA) hydrogel. The nanoparticles were synthesized and their structures confirmed through X-ray Diffraction (XRD) and High-Resolution Transmission Electron Microscopy (HRTEM) analyses. The uniformity of the deposited layer was scrutinized using Field Emission Scanning Electron Microscopy (FESEM), and the sensor’s stability was assessed through repeated usage. Furthermore, the study investigated the impact of PVA on the sensitivity and accuracy of the probe, utilizing UV–Visible spectroscopy and transmission spectra. This research is poised to significantly enhance the field of sensing by improving sensor accuracy, sustainability, and durability, all while maintaining high sensitivity.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced photovoltaic performance of SmMoSe2 electron transport layer for perovskite solar cells","authors":"BA. Anandh,&nbsp;A. Shankar Ganesh,&nbsp;P. Nandakumar,&nbsp;D. Saranya","doi":"10.1007/s10854-025-14224-0","DOIUrl":"10.1007/s10854-025-14224-0","url":null,"abstract":"<div><p>Electron transport layers (ETLs) are crucial components in perovskite solar cells (PSCs), facilitating efficient electron collection and reducing recombination losses. While transition metal dichalcogenides have shown promise as ETLs, the potential of samarium (Sm)-encapsulated (5% and 10%) molybdenum diselenide (MoSe₂) remains unexplored. This study investigates the impact of hydrothermal synthesis incorporating SmMoSe₂ on the physicochemical properties and photovoltaic performance of PSCs. J-V performance demonstrates a significant enhancement in solar cell performance with samarium encapsulation. The MoSe₂ exhibited a Jsc of 11.27 mA/cm², Voc of 1.02 V, fill factor of 70%, and power conversion efficiency of 7.97%. In comparison, the SmMoSe₂ 5% sample showed improved performance with a Jsc of 13.02 mA/cm², Voc of 1.02 V, fill factor of 78%, and efficiency of 9.46%. The SmMoSe₂ 10% sample demonstrated the best performance, with a Jsc of 13.93 mA/cm², Voc of 1.03 V, fill factor of 82%, and a notable power conversion efficiency increase to 10.24%. The enhanced performance of SmMoSe₂ 10% PSCs can be attributed to accelerated charge transfer at the ETL, improved crystalline morphology and size, reduced band gap, and increased surface area. These findings suggest that SmMoSe₂ electron transport layers can substantially enhance the performance of perovskite solar cells, with higher doping levels leading to greater improvements in efficiency.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crystal growth and characterization of a novel organic triethylenediaminium hydronium trinitrate (TEDHT) single crystal for optoelectronic applications","authors":"B. Sahaya Infant Lasalle,&nbsp;Muthu Senthil Pandian,&nbsp;P. Ramasamy,&nbsp;K. Anitha","doi":"10.1007/s10854-025-14236-w","DOIUrl":"10.1007/s10854-025-14236-w","url":null,"abstract":"<div><p>A single crystal of Triethylenediaminium Hydronium Trinitrate (TEDHT) was grown by using slow evaporation solution technique (SEST). Triethylenediaminium is also known as piperazine. The structural analysis such as crystal system and unit cell parameter of the grown TEDHT crystal was examined by single-crystal XRD analysis, and it exposed that the TEDHT crystal has a trigonal crystal system and space group P 3 1 c. Using powder XRD analysis, miller index and (h k l) planes were identified. The TEDHT crystal has a sharp cutoff wavelength around 320 nm and is transparent in UV region. The FTIR analysis was investigated on the TEDHT crystal to find out the TEDHT functional groups. The thermogravimetric and differential thermal analyses illustrate that the TEDHT crystal is thermally stable upto 96 °C. The positive photoconductivity nature of the TEDHT crystal was measured by photoconductivity analysis. The dielectric constant (ε′) and dielectric loss (tan δ) as a function of frequency were measured for the grown crystal. Chemical etching study was carried out, and the etch pit density (EPD) was calculated. The mechanical stability of the grown TEDHT crystal was studied using Vickers microhardness measurement. The NLO susceptibility (χ⁽³⁾) was calculated by the Z-scan method using the source of the He–Ne laser, of which wavelength is 632.8 nm.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The influence of annealing temperature on the gas sensing properties of multifunctional hematite (α-Fe2O3) films","authors":"Fatma Sarf,&nbsp;Irmak Karaduman Er,&nbsp;Emin Yakar,&nbsp;Selim Acar","doi":"10.1007/s10854-025-14244-w","DOIUrl":"10.1007/s10854-025-14244-w","url":null,"abstract":"<div><p>In this study, hematite (α-Fe₂O₃) were prepared using direct solution spin coating and the changes of some physical properties with annealing temperature (400, 500 and 600 °C) for 2 h were investigated. The sensors annealed at 400 °C, 500 °C and 600°C are referred to as F400, F500 and F600 respectively. The X-ray diffraction patterns of the prepared samples confirm the polycrystalline nature of the rhombohedral crystal structure of hematite (α-Fe₂O₃). The surface roughness parameters (SA-SQ) of the α-Fe₂O₃ films decreased drastically with increasing annealing temperature from 400 to 600 °C (57.47–68.08/13.63–17.13). The direct optical band gap values were estimated from absorption measurements and ranged from 2.77 to 2.52 eV. The electrical resistivity measurement at room temperature of the samples decreased with increasing annealing temperature from 400 to 600 °C. The response of the CO sensor of F400, F500 and F600 was found at 180 °C. The response to 1 ppm CO gas was calculated to be 1.45%, 8% and 10% for F400, F500 and F600 respectively. The wettability test of the samples showed a water contact angle (WCA) of less than 90°, demonstrating the hydrophilic surface especially for the samples annealed at 500 °C.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14244-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis, crystal growth, spectral, optical, mechanical, sensor and thermal characterizations of 2-amino-5-chloropyridinium-p-toluenesulphonate crystals","authors":"R. Jamuna,&nbsp;T. Jayanalina,&nbsp;Ehab El Sayed Massoud,&nbsp;K. SenthilKannan","doi":"10.1007/s10854-024-14182-z","DOIUrl":"10.1007/s10854-024-14182-z","url":null,"abstract":"<div><p>The 2-amino-5-chloropyridinium-p-toluenesulphonate (2A5CPPTS) is grown by slow evaporation solution growth method at room ambience. The grown crystal is recrystallized to get the pure 2A5CPPTS compound. The lattice parameters of 2A5CPPTS are <i>a</i> = 8.6563 Å, <i>b</i> = 12.9008 Å, and <i>c</i> = 12.1712 Å and the crystal is of the type of monoclinic nature with space group is P2₁/n. The structure of the 2A5CPPTS organic crystal is identified by the proton and carbon NMR studies and TEM with 50 nm. The 2A5CPPTS crystal ORTEP plotting with a 50% chance of the thermal displacement ellipsoids. The functional group of 2A5CPPTS is confirmed by the FTIR spectral analysis. The optical transmittance of 2A5CPPTS crystal is the 50% of transparency with 2 mm thickness, and the cut-off is at 214 nm in Tauc’s plot, and the optical bandgap value is 5.12 eV. The 2A5CPPTS crystalline thermal studies are analyzed thermogravimetrically along with different thermal studies. The dielectric analysis of the 2A5CPPTS crystal is dielectric loss and dielectric constant. The dielectric constant is lower at the higher frequency values, and the higher dielectric constant at lower frequency values. The dielectric value of the crystal decreases with increasing frequency and the field of micro-electronics, the crystal can also be used as a form of protection. The micro-hardness of the crystalline material is greater along when the load value also greater. According to Onitsch, the hardness coefficient data indicates that a softer type of material has a hardness coefficient of more than 1.6 and present case it is 5.1. The method’s decision depends on how effective the chemical etchant in identifying dislocation or non-dislocation zones. At the dislocated locations, the etch pattern forms when the surface is appropriately etched. The sensor work is measured for room temperature based LED work and its sensitivity is compared for normal and pressure-based work with % value and with humidity data for 2A5CPPTS crystal. Also, the powder XRD data with Laue’s pattern is provided for better understanding.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid n-butanol gas sensor based on CuBi2O4 porous nanotubes","authors":"Zhenxing Wang,&nbsp;Qingsong Luo,&nbsp;Yiheng Huang,&nbsp;Yan Chen,&nbsp;Yimu Wang,&nbsp;Changhao Feng","doi":"10.1007/s10854-025-14219-x","DOIUrl":"10.1007/s10854-025-14219-x","url":null,"abstract":"<div><p>The sensitive and rapid detection of n-butanol gas is crucial for ensuring industrial safety, environmental protection, and biological health. In this study, we employed electrospinning to fabricate a series of CuBi₂O₄ nanofibers and nanotubes, followed by thorough characterization and analysis of their structural and functional features using XRD, FE-SEM, TEM, and XPS techniques. The gas-sensing performance demonstrates that CuBi₂O₄ nanotubes (CBO-500) exhibit an exceptionally rapid response to n-butanol, highlighting their potential for use in high-sensitivity n-butanol sensors. The sensor exhibited a response of 12.30–10 ppm n-butanol at 150 °C, with a rapid response time of 2 s and a recovery time of 41 s. Furthermore, the sensors based on CBO-500 nanotubes exhibited excellent selective. In addition, this study elucidates the underlying mechanisms responsible for the gas-sensing properties of CuBi₂O₄ nanotubes toward n-butanol.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation and predictive modeling of the optical behavior of chalcogenide thin film using different artificial neural network techniques","authors":"H. I. Lebda,&nbsp;H. E. Atyia,&nbsp;R. A. Mohamed","doi":"10.1007/s10854-025-14220-4","DOIUrl":"10.1007/s10854-025-14220-4","url":null,"abstract":"<div><p>The <span>({text{Te}}_{72}{text{Ge}}_{24}{text{As}}_{4})</span> samples were recently created in our laboratory in bulk form using the traditional melt-quench method. For its optical characterization. The studied thin film samples have been created using physical vapor deposition. By selecting the 400 nm to 2500 nm spectral range of wavelength, the spectral of the experimental transmission <i>T</i>(<i>λ</i>) and reflectance <i>R</i>(<i>λ</i>) for the studied film samples have been employed to examine optical characteristics. First, we have determined the extinction coefficient (<span>(k)</span>) and refraction index (<span>(n)</span>) indices and their spectral distribution of them. Using Tauc's theory, we then computed the optical band gap <span>({E}_{text{opt}})</span>. Urbach energy <span>({E}_{r})</span> is determined from the linear dependence of photon energy on the absorption coefficient which was taken as an indicator to identify the disorder degree in the films. The additional variables, like the dissipation and quality factors, the dielectric constant in complex form, optical, thermal, and electrical conductivity, and volume/surface energy were measured. A comprehensive analysis and predictive modeling using various artificial neural networks (ANNs) techniques were applied to examine the optical behavior of the film samples studied. Materials made of chalcogenide are well-known for having special optical properties, making them appropriate for applications in photonics and optoelectronics. We employed multiple architectures, including Feedforward Neural Networks (FNN) and Recurrent Neural Networks (RNN), to model the extinction coefficient (<span>(k)</span>) and the refractive index (<span>(n)</span>) of these films using experimental data. The performance of each model was evaluated using metrics such as mean squared error MSE and correlation coefficients <i>R</i>². The optical parameters relevant to absorbance, refractive indices, and dielectric coefficients are computed rely on the modeling results and compared with those computed based on experimental measurements. Results demonstrate that FNN and RNN effectively capture the complex relationships between the optical parameters and exhibit small error rates. FFN shows superior accuracy in prediction. That highlights the potential of ANN techniques for advancing the understanding of chalcogenide materials and their applications in modern technology.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14220-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Research on vibration reliability of solder joint based on modal experiment of PCBA","authors":"Fang Liu,&nbsp;Runze Gong,&nbsp;Zhongwei Duan,&nbsp;Zhen Wang,&nbsp;Jiacheng Zhou","doi":"10.1007/s10854-025-14217-z","DOIUrl":"10.1007/s10854-025-14217-z","url":null,"abstract":"","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation on synthesis and characterization of ZnO nanostructure photoelectrode for dye-sensitized solar cells","authors":"Varishetty Madhu Mohan,&nbsp;Shaik Ibrahim Khalivulla,&nbsp;Nadimicherla Reddeppa,&nbsp;Arigala Uma Ravi Sankar,&nbsp;Kenji Murakami","doi":"10.1007/s10854-025-14237-9","DOIUrl":"10.1007/s10854-025-14237-9","url":null,"abstract":"<div><p>The spray pyrolysis technique was utilized to prepare the ZnO nanoparticle-based photoanodes for dye-sensitized solar cells (DSSCs). The particle size in the range of 6–10 nm was synthesized by the sol–gel method using zinc acetate dihydrate ((CH₃COO)₂Zn.2H₂O) and lithium hydroxide monohydrate (LiOH.H₂O). In addition, a novel approach was introduced to synthesis ZnO porous nanostructures via solvo-thermal method. In this method, zinc acetate dihydrate and sodium dodecyl sulfate (SDS) (WAKO CO., LTD) utilized as precursors. The prepared ZnO nanoparticles were characterized by XRD, SEM, and TEM. Dye-sensitized solar cells (DSSCs) were prepared based on synthesized ZnO particle-based photoelectrode and studied their performance. DSSCs prepared based on commercially available ZnO nanoparticle (20 nm) based electrode exhibit a higher conversion efficiency 2.22% compared to 1.42% for mixed (Syn/comm (6:4)) materials. This suggests that commercially manufactured nanoparticles exhibit superior light harvesting and charge transport properties compared to smaller and mixed commercial powders. Further, the effect of thickness on efficiency of DSSCs also extensively investigated. The results reveal that the commercial material efficiency increases 2.2–3.5% with thickness from 12 to 17 µm, indicating better light capture at higher thicknesses. However, we observed that Syn/comm (6:4) material did not exhibit much difference at higher thickness that due to smaller-sized particles it may exhibited less porosity for dye adsorption more boundaries creates lack of connection between particles for electron transportation. However, at lower thickness flexible devices these combination material provide higher efficiency compared to commercially produced materials. Further, SDS-assisted ZnO porous structure material (P-ZnO) was synthesized and investigated electrode performance. The P-ZnO-based electrode cell demonstrated an enhanced efficiency of 4.92%, attributed to increased dye adsorption and efficient electron transfer facilitated by well-connected particles.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel BaMgSi4O10 microwave dielectric ceramic for LTCC application","authors":"Zhenli Luo,&nbsp;Yiyang Cai,&nbsp;Changzhi Yin,&nbsp;Mingfei Cheng,&nbsp;Weicheng Lei,&nbsp;Wenzhong Lu,&nbsp;Xiaoqiang Song,&nbsp;Wen Lei","doi":"10.1007/s10854-024-14130-x","DOIUrl":"10.1007/s10854-024-14130-x","url":null,"abstract":"<div><p>A novel BaMgSi₄O₁₀ ceramic was fabricated using a conventional solid-state method. The BaMgSi₄O₁₀ accompanied with BaMgSiO₅, Ba₂MgSi₂O₇, and SiO₂ was detected for all compositions. Furthermore, microwave dielectric properties with <i>ε</i>_r = 5.7_, <i>Q</i> × <i>f</i> = 17,900 GHz, and <i>τ</i>_<i>f</i> = − 19.1 ppm/°C were obtained at 1100 °C. To meet the requirement of LTCC technology, the optimum temperature can be lower than 850 °C by composing with 2 wt% LMS glass with a short soaking time of 0.5 h. A patch antenna was fabricated using BaMgSi₄O₁₀-2 wt% LMS as the substrate with a bandwidth of 120 MHz at 4.12 GHz. All result indicates BaMgSi₄O₁₀-2 wt% LMS ceramic has large application prospect in wireless communication systems.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}