Journal of Materials Science: Materials in Electronics最新文献_第2页

On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures Au/(PEG: Er-MnFe2O4)/ n-Si结构中可能的电流输运机制、界面态能量依赖分布和温度敏感性

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-26 DOI: 10.1007/s10854-025-14923-8

H. G. Çetinkaya, Yusuf Badali, Ş. Altındal

{"title":"On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures","authors":"H. G. Çetinkaya, Yusuf Badali, Ş. Altındal","doi":"10.1007/s10854-025-14923-8","DOIUrl":"10.1007/s10854-025-14923-8","url":null,"abstract":"<div>The Au/(PEG:Er–MnFe2O4)/n–Si junctions have been constructed and their possible charge/current transport mechanisms (CTMs) investigated across temperatures ranging from 80 to 340 K and a ± 3 V bias range using the I–V measurements. The forward bias semi-logarithmic I–V curves exhibited two distinct linear regimes. The semilogarithmic I–V characteristics show that while ideality factor (n) declines with inclining temperature, barrier height (BH) inclines. The thermionic emission model with double Gaussian dispersion (DGD) of the BHs was able to successfully explain such temperature-dependent changes in the BH and n. Plots of ΦB0-q/2kT, ΦB0-n, and n−1-q/2kT curves showed two linear-portions, indicative of a DGD. These findings suggest that the fabricated Au/(PEG:Er–MnFe2O4)/n–Si diode could serve effectively as a temperature-sensor (TS) in whole temperature range. The distribution profile of the interface traps (Dit) in the forbidden energy band was obtained from the Card&Rhoderick model by utilizing I–V data, considering the voltage-dependent ΦB(V) and n(V) values for each temperature. The observed declines with inclining temperature and shifting positions of them was attributed to the restructure/reorder of Dit under the temperature effect. The obtained results suggest that the fabricated these structures are very sensitive to temperature and voltage and so can be used as a temperature application.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14923-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144140094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of energy storage performance of (Bi0.5Na0.5)0.7Sr0.3TiO3 ceramics by introducing La(Mg0.5Zr0.5)O3 引入La(Mg0.5Zr0.5)O3提高（Bi0.5Na0.5）0.7Sr0.3TiO3陶瓷的储能性能

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14943-4

Liangdong Li, Haixiang Guo, Ruiping La, Shiling Huang, Huanfu Zhou

{"title":"Enhancement of energy storage performance of (Bi0.5Na0.5)0.7Sr0.3TiO3 ceramics by introducing La(Mg0.5Zr0.5)O3","authors":"Liangdong Li, Haixiang Guo, Ruiping La, Shiling Huang, Huanfu Zhou","doi":"10.1007/s10854-025-14943-4","DOIUrl":"10.1007/s10854-025-14943-4","url":null,"abstract":"<div>With the development of pulsed power devices in the direction of miniaturization, integration, and safety, the development of dielectric capacitors with large energy storage density (Wrec), high energy storage efficiency (η), and decent energy storage stability has become an important topic that needs to be discussed in depth in the academic community. In this study, (1 − x)(Bi0.5Na0.5)0.7Sr0.3TiO3-xLa(Mg0.5Zr0.5)O3 [(1 − x)BNST-xLMZ] ceramics were prepared by traditional solid-phase method. Through rational component manipulation, the introduction of LMZ effectively disrupted the long-range ordered arrangement of the original matrix, constructing short-range polar nano-microregions that consequently delayed the saturation polarization of ceramics and reduced the residual polarization. Meanwhile, the introduction of LMZ significantly affects the microstructure and relaxor behavior of BNST-based ceramics, resulting in reduced grain size and a more compact ceramic structure. It was found that 0.85BNST-0.15LMZ ceramic exhibited decent energy storage performance under an electric field of 400 kV/cm, with a large Wrec of 4.53 J/cm and high η of 87.50%. It is noted that 0.85BNST-0.15LMZ ceramics exhibited ultra-fast discharge rate of 23 ns. These results indicate that 0.85BNST-0.15LMZ ceramics have broad development prospects in the field of supercapacitors for energy storage.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel red-emitting phosphor Na3LaW3O12: Sm3+, Eu3+: synthesis, luminescent properties, anti-thermal quenching and LED packaging 新型红发荧光粉Na3LaW3O12: Sm3+、Eu3+的合成、发光性能、抗热猝灭及LED封装

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14948-z

Mingming Li, Feibing Xiong, Weibin Yang, Jing Li, Zhengkai Hu, Xin Bai, Yaqing Lin, Junxiong Huang, Qinqin Zhuang, Zaijun Cheng

{"title":"Novel red-emitting phosphor Na3LaW3O12: Sm3+, Eu3+: synthesis, luminescent properties, anti-thermal quenching and LED packaging","authors":"Mingming Li, Feibing Xiong, Weibin Yang, Jing Li, Zhengkai Hu, Xin Bai, Yaqing Lin, Junxiong Huang, Qinqin Zhuang, Zaijun Cheng","doi":"10.1007/s10854-025-14948-z","DOIUrl":"10.1007/s10854-025-14948-z","url":null,"abstract":"<div>A series of novel red-emitting Na3LaW3O12: xSm3+ (x = 0–0.1) and Na3LaW3O12: 0.06Sm3+, yEu3+ (y = 0.09–0.27) phosphors have been synthesized through a high-temperature solid-state method. The phase structure, luminescent properties, and thermal stability of these materials were analyzed by the X-ray diffraction, scanning electron microcopy, luminescence spectra, luminescence decay curves, and temperature-dependent spectra. The Na3LaW3O12: Sm3+, Eu3+ phosphor show an abnormal thermal stability property, and the luminescence intensity of Na3LaW3O12: 0.06Sm3+, 0.21Eu3+ at 453 K remains about 97% of the original value at room temperature. Based on the as-synthesized Na3LaW3O12: 0.06Sm3+, 0.21Eu3+ phosphors as red component, a white LED with 2653 K correlated color temperature and Ra = 85.0 color rendering index has been fabricated using a 465 nm blue chip, and LuAG: Ce3+ yellowish-green phosphor. The results indicated that the as-synthesized Na3LaW3O12: Sm3+, Eu3+ phosphor may be applied in white LEDs as potential abnormal thermal quenching red-emitting material.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrochemical performance evaluation of Ru-doped TiO2 synthesized via sol–gel approach 溶胶-凝胶法制备钌掺杂TiO2的电化学性能评价

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14922-9

Aditya P. Adhyapak, Ankit R. Ransing, Vishal S. Kadam, Chaitali V. Jagtap, P. E. Lokhande, Udayabhaskar Rednam, V. T. Thavale, U. S. Chavan, Parag V. Adhyapak, Habib M. Pathan

{"title":"Electrochemical performance evaluation of Ru-doped TiO2 synthesized via sol–gel approach","authors":"Aditya P. Adhyapak, Ankit R. Ransing, Vishal S. Kadam, Chaitali V. Jagtap, P. E. Lokhande, Udayabhaskar Rednam, V. T. Thavale, U. S. Chavan, Parag V. Adhyapak, Habib M. Pathan","doi":"10.1007/s10854-025-14922-9","DOIUrl":"10.1007/s10854-025-14922-9","url":null,"abstract":"<div>Supercapacitor systems have gained significant attention across industries for their exceptional features, such as high power density, extended cycle life, and wide operational temperature range. This study explores the development of a ruthenium-doped titanium dioxide (TiO2) nanocomposite via a simple sol–gel synthesis technique for applications in supercapacitors. The ruthenium doping concentrations ranged between 0.25% and 1% in TiO2, and the results were benchmarked against pure TiO2. Structural analysis identified a mixed-phase composition of rutile and anatase, forming a tetragonal crystal structure. Measurements of surface area revealed an improvement in specific surface area for the doped samples. Electrochemical performance testing highlighted that TiO2 doped with 0.5% Ru delivered superior results, achieving a specific capacitance of 427 Fg⁻1 at a current density of 5 Ag⁻1, while exhibiting remarkable cyclic stability. Moreover, an all-solid-state asymmetric supercapacitor device incorporating this material achieved an energy density of 20 Whkg⁻1 and a power density of 1125 Wkg⁻1, retaining full capacitance after 5000 charge–discharge cycles. These findings underscore the potential of Ru-doped TiO2 composites in enhancing electrochemical performance for practical energy storage applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable preparation of flowered Cu-doped Zn1-xCuxMn2O4 spinel and its application in electrode materials for supercapacitors 花型cu掺杂Zn1-xCuxMn2O4尖晶石的可控制备及其在超级电容器电极材料中的应用

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14885-x

Junxia Wang, Li Shi, Xiaoli Wang, Lixia Yang

{"title":"Controllable preparation of flowered Cu-doped Zn1-xCuxMn2O4 spinel and its application in electrode materials for supercapacitors","authors":"Junxia Wang, Li Shi, Xiaoli Wang, Lixia Yang","doi":"10.1007/s10854-025-14885-x","DOIUrl":"10.1007/s10854-025-14885-x","url":null,"abstract":"<div>The design of high-performance electrode materials is a hot topic in supercapacitor research. A novel series of flowered Cu-doped Zn1-xCuxMn2O4 spinel prepared by a simple hydrothermal method is used as the high-performance supercapacitor electrode materials. The morphology and the structure of Cu-doped Zn1-xCuxMn2O4 spinel are characterized and analyzed by X-Ray Diffraction (XRD), Field-Emission Scanning Electron Microscope (FE-SEM), Fourier Transform Infrared Spectrometer (FT-IR), and X-ray Photoelectron Spectroscopy (XPS). The results indicate that Cu2+ ions successfully replace Zn2+ ions into the crystal lattices of Zn1-xCuxMn2O4 spinel and keep a similar flowered morphology with ZnMn2O4. However, the incorporation of Cu2+ ions in the spinel crystal lattices leads to little microstructure change in samples. Flowered ZnMn2O4 is self-assembled from fluffy-tipped micron rods. Flowered Zn1-xCuxMn2O4 spinel is self-assembled from smooth diamond-shaped nanostructures. The possible morphology formation mechanism of the flowered ZnMn2O4 might be the micelle formation of the structure-directing agent of sodium citrate in solution. Introducing Cu2+ ions into the spinel crystal lattices effectively contributes to the improvement of the capacitance and the cyclability of Cu-doped Zn1-xCuxMn2O4 spinel. Among them, Zn0.7Cu0.3Mn2O4 shows the highest specific capacitance with 281 F/g at a current density of 1 A/g and better cyclic performance with a capacitance retention rate of 77.4% after 1000 cycles.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Effects of Ni addition on microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects Ni添加对全（Cu,Ni）6Sn5 IMC互连组织和可靠性的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI: 10.1007/s10854-025-14932-7

P. Liu, J. Ren, M. L. Huang

{"title":"Effects of Ni addition on microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects","authors":"P. Liu, J. Ren, M. L. Huang","doi":"10.1007/s10854-025-14932-7","DOIUrl":"10.1007/s10854-025-14932-7","url":null,"abstract":"<div>Full intermetallic compound (IMC) interconnects have emerged as a promising die-attach solution for third-generation semiconductor power devices due to their superior high-temperature stability. This study demonstrated the fabrication of Cu/(Cu,Ni)6Sn5/Cu full IMC interconnects using the current driven bonding (CDB) method with Sn-0.1Ni solder, focusing on microstructural evolution and electromigration (EM) resistance. Systematic analysis of liquid–solid EM behavior under high current stressing (1.0 × 104 A/cm2) revealed that the dopant of Ni significantly suppressed the growth of anode (Cu,Ni)3Sn IMCs, yielding a thickness of 1.54 µm compared to 3.13 µm for the cathode Cu3Sn IMCs. EM testing (150 °C, 1.0 × 104 A/cm2, 500 h) demonstrated exceptional stability, with the anode (Cu,Ni)3Sn IMCs increasing by only 0.47 μm versus 1.95 µm for the cathode Cu3Sn IMCs, and limited coarsening of (Cu,Ni)6Sn5 grains, with an average grain size of 11.72 µm in as-fabricated state increasing to 15.08 µm after current stressing. High shear strength was achieved for as-fabricated full (Cu,Ni)6Sn5 IMC interconnects (58.7 MPa) and was maintained after aging (55.5 MPa) and current stressing (51.3 MPa). These results highlight the CDB method with Sn-0.1Ni solder as an effective strategy for fabricating full IMC interconnects with high strength and enhanced EM reliability.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing the structural, optical, hydrophobic, and electrical properties of (Sn/Mg) co-doped ZnO thin films for application as solar cell electrodes 优化用于太阳能电池电极的（Sn/Mg）共掺杂ZnO薄膜的结构、光学、疏水性和电学性能

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14918-5

Imadeddine Bellili, Warda Darenfad, Noubeil Guermat, Nadir Bouarissa

{"title":"Optimizing the structural, optical, hydrophobic, and electrical properties of (Sn/Mg) co-doped ZnO thin films for application as solar cell electrodes","authors":"Imadeddine Bellili, Warda Darenfad, Noubeil Guermat, Nadir Bouarissa","doi":"10.1007/s10854-025-14918-5","DOIUrl":"10.1007/s10854-025-14918-5","url":null,"abstract":"<div>A simple chemical pneumatic spray pyrolysis technique was employed to prepare thin films of pure ZnO, 1%Mg-doped ZnO, and co-doped 1%Sn/x%Mg (x = 1 and 2) ZnO on ordinary glass substrates at a deposition temperature of 450 °C. The influence of doping and co-doping on the physical properties of the deposited films was systematically investigated. Structural analysis using X-ray diffraction (XRD) and Raman spectroscopy revealed that all samples exhibit a hexagonal crystalline structure with a preferred orientation along the (002) direction, perpendicular to the substrate, with no secondary phases detected. The crystalline quality improved for both doped and co-doped films compared to the undoped ZnO film. Atomic Force Microscopy (AFM) micrographs indicated an increase in surface roughness with doping while co-doping with 1% Sn/1% Mg led to a reduction in roughness compared to pure ZnO. Static contact angle (CA) measurements correlated well with the AFM analysis, showing hydrophobic behavior (CA > 90°) for all elaborated films. This hydrophobic nature is a critical feature for mitigating humidity-induced degradation, thereby enhancing the durability and efficiency of thin-film solar cell layers. Optical analysis demonstrated improved transparency, with average values increasing from 86 to 91%, alongside a widening of the optical bandgap from 3.27 eV to 3.39 eV. The Urbach energy decreased from 329 to 320 meV upon the incorporation of Mg and/or Sn into ZnO. The electrical properties of the ZnO thin films also improved significantly due to the effective incorporation of Sn/Mg, resulting in a low resistivity of 5.44 × 10−3 Ω.cm and a high figure of merit (FOM) of 3.68 × 10−3 Ω−1 for the (1%Sn/1%Mg)-ZnO film. Based on the findings of this study, the ZnO:1%Sn:1%Mg film represents the optimal condition for use as a transparent conducting electrode in thin-film solar cells.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144131487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Targeted doping-induced modulation of conductive filaments in ZnO films for digital-to-analog resistive switching 用于数模电阻开关的ZnO薄膜导电丝的定向掺杂诱导调制

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14907-8

Phu-Quan Pham, Ngoc Hong Nguyen, Lien Hoang Huynh, Tai Anh Van Vo, Thuy-Anh Tran, Truong Huu Nguyen, Hoa Thi Lai, Duy Thai Le, Thang Bach Phan, Ngoc Kim Pham

引用次数: 0

Development of expanded graphite composite-based triboelectric nanogenerator for sustainable energy generation 可持续能源发电用膨胀石墨复合摩擦纳米发电机的研制

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14952-3

Sebghatullah Amini, Rumana Farheen Sagade Muktar Ahmed, Sangamesha Madanahalli Ankanathappa, Krishnaveni Sannathammegowda

{"title":"Development of expanded graphite composite-based triboelectric nanogenerator for sustainable energy generation","authors":"Sebghatullah Amini, Rumana Farheen Sagade Muktar Ahmed, Sangamesha Madanahalli Ankanathappa, Krishnaveni Sannathammegowda","doi":"10.1007/s10854-025-14952-3","DOIUrl":"10.1007/s10854-025-14952-3","url":null,"abstract":"<div>Triboelectric Nanogenerators (TENG), transformational devices that harness mechanical energy to generate electricity, are pivotal for driving the advancement of autonomous technologies in today’s mobile-centric world. In this study, a TENG is developed, using a novel composite film of Polyvinyl Alcohol-Expanded Graphite (PVA-EGr) as the positive triboelectric layer, Polyurethane (PU) as the negative triboelectric layer, and aluminum (Al) foil tape as electrodes. Various characterizations are performed to study the properties of the composite film and compared to pristine PVA film, including crystallographic structure, surface morphology, elemental composition, chemical bonding, and analysis of functional groups present in both films. Further, the electrical performance of the fabricated devices shows that the TENG with 0.4 g of EGr achieves the highest output voltage, current, and power of 264.68 V, 6.87 μA, and 2.88 mW, respectively. This optimized device demonstrates its capability by charging different capacitors and powering a series of green LEDs, highlighting its suitability for practical applications in electronic devices.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nickel oxide and carbon allotropes-based nanohybrids show enhanced efficiency of p-type dye-sensitized solar cells 基于氧化镍和碳同素异素的纳米杂化物显示出p型染料敏化太阳能电池的效率提高

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-24 DOI: 10.1007/s10854-025-14897-7

Nidhi Prajapati, Preeti Sehgal, Hiren Machhi, S. S. Soni, C. N. Murthy

{"title":"Nickel oxide and carbon allotropes-based nanohybrids show enhanced efficiency of p-type dye-sensitized solar cells","authors":"Nidhi Prajapati, Preeti Sehgal, Hiren Machhi, S. S. Soni, C. N. Murthy","doi":"10.1007/s10854-025-14897-7","DOIUrl":"10.1007/s10854-025-14897-7","url":null,"abstract":"<div>In this study, we investigated the optimal carbon allotropes to enhance the performance of p-type dye-sensitized solar cells (DSSCs) with NiO. Various allotropes of carbon, including multi-walled carbon nanotubes (MWCNT), reduced graphene oxide (RGO), graphene quantum dots (GQD), and fullerene (C60), were examined for their distinct structural and electrochemical properties. When incorporated with NiO, these carbon allotropes displayed a power conversion efficiency (PCE) trend of (NiO@GQD) NG < (NiO@fullerene) NF < (NiO@RGO) NR < (NiO@f-MWCNT) NM, with corresponding PCE values of 0.55%, 0.60%, 0.72%, and 0.80%. The quantum efficiency (QE) values of NG, NR, NF, and NM were found to be approximately 62%, 65%, 70%, and 80%, respectively. Among the four NiO-based nanohybrids, the NM-based device exhibited the highest PCE of 0.80%, with a short-circuit current density (Jsc) of 2.53 mA cm⁻2, an open-circuit voltage (Voc) of 0.56 V, and a fill factor (FF) of 56.46%. This superior performance is attributed to the enhanced dye adsorption and rapid charge transfer properties facilitated by the NM nanohybrid. </div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144131484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0