Suman Kumari, G. Chasta, Himanshu, D. Suthar, N. Kumari, M. S. Dhaka
{"title":"Unveiling the MgCl2 activation on grain boundary passivation in thermally evaporated CdTe films for solar cells","authors":"Suman Kumari, G. Chasta, Himanshu, D. Suthar, N. Kumari, M. S. Dhaka","doi":"10.1007/s10854-026-18372-9","DOIUrl":"10.1007/s10854-026-18372-9","url":null,"abstract":"<div><p>Present work exhibits influence of affordable, non-carcinogenic, low-cost, eco-friendly, non-toxic MgCl<sub>2</sub> activation on grain boundary passivation and physical characteristics of resistive heating-based thermally evaporated CdTe thin films (having thickness 600 nm) where prepared layers are treated with MgCl<sub>2</sub> followed by annealing in air atmosphere at 235 °C, 310 °C and 385 °C temperatures. All the CdTe films reveal to polycrystalline crystallographic behavior having cubic phase with (310) orientation as favored reflection. An increase in electrical resistivity is observed with activation treatment whereas crystallite size, optical energy bandgap and average surface roughness are varied in 35–45 nm, 1.43–1.60 eV and 8.6–32.7 nm ranges, respectively with activation treatment temperature. The absorbance and transmittance spectra are strongly modified with MgCl<sub>2</sub> activation whereas the surface topography of films indicate hillock-like structures. The PL spectra of treated CdTe films show two emission peaks positioned at ~652 nm and ~705 nm. The findings show that CdTe films activated with MgCl<sub>2</sub> at 310 °C might be utilized as vibrant light absorbing layers for solar cell applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Marius Armand Amou, Fransisco Kouadio Konan, Bouchaib Hartiti, Ahmed Ziti, Boko Aka, Abdelkrim Batan, Youssef Doubi, Ahmed Kotbi, Mustapha Jouiad, Hicham Labrim, Laazizi Abdellah, Philippe Thevenin
{"title":"Influence of annealing time on the properties of sol–gel-derived Cu2ZnSnS4 (CZTS) thin films for photovoltaic absorbers","authors":"Marius Armand Amou, Fransisco Kouadio Konan, Bouchaib Hartiti, Ahmed Ziti, Boko Aka, Abdelkrim Batan, Youssef Doubi, Ahmed Kotbi, Mustapha Jouiad, Hicham Labrim, Laazizi Abdellah, Philippe Thevenin","doi":"10.1007/s10854-026-18585-y","DOIUrl":"10.1007/s10854-026-18585-y","url":null,"abstract":"<div><p>This study investigates the influence of annealing time (5, 10, and 15 min at 375 °C) on the structural, morphological, compositional, and optical properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films prepared by the sol–gel method and deposited by spin-coating on borosilicate glass substrates. The films were obtained from a precursor solution containing CuCl<sub>2</sub> 2H<sub>2</sub>O, ZnCl<sub>2</sub>, SnCl<sub>2</sub> 2H<sub>2</sub>O, and CS(NH<sub>2</sub>)<sub>2</sub>, stabilized with monoethanolamine. X-ray diffraction and Raman analyses supported the formation of the kesterite CZTS phase, with a preferred orientation along the (112) plane and a characteristic Raman mode at 332 cm⁻<sup>1</sup>. Increasing the annealing time promoted crystallite growth but resulted in a progressive deterioration of the film composition. SEM and EDX analyses revealed increased porosity, sulfur depletion, and oxygen enrichment for longer annealing durations. UV–Vis measurements showed absorption coefficients on the order of 10<sup>4</sup> cm⁻<sup>1</sup> and an increase in the optical band gap from 1.50 to 1.75 eV as the annealing time increased from 5 to 15 min. The results indicate that a 5-min annealing time provides the best compromise between structural quality, compositional stability, and optical properties among the investigated conditions, making it the most promising condition for potential use as a CZTS photovoltaic absorber layer.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of annealing temperature on the physicochemical and optical properties of the Aloe vera gel-assisted solid-state combustion derived ZnO nanostructures for the photocatalytic mineralization of tetracycline under UV light irradiation","authors":"Manoj Pudukudy, Zhi Yunfei, Shan Shaoyun, Nabila A. Karim, Ramesh Rajendran","doi":"10.1007/s10854-026-18534-9","DOIUrl":"10.1007/s10854-026-18534-9","url":null,"abstract":"<div><p>A facile green solid-state combustion method is reported for the bulk production of mesoporous-ZnO nanoparticles using aloe vera gel as a natural combustion fuel for the first time. The influence of annealing temperature from 400 ºC to 1000 ºC on the structural, morphological, textural and optical properties of the ZnO was investigated. The ZnO nanoparticles were effectively used for the photocatalytic degradation of tetracycline antibiotic in aqueous medium under UV light irradiation. The analytical results indicated that hexagonal wurtzite phase-pure crystalline structure of ZnO was formed in the aforementioned synthesis at 500 ºC. The annealing temperature had a great role in the crystallinity, surface area, morphology and optical properties of the samples. The crystallite size of ZnO was drastically increased with increasing annealing temperature whereas the specific surface area and porosity instantaneously decreased. A mesoporous architecture due to the inter-aggregation more or less spherical-shaped particles with well-resolved grain boundaries was clearly visible. The samples showed light absorption in the UV-region with the measured bandgap energies of 3.13 ± 0.01 eV, irrespective of the annealing temperature. The high charge separation efficiency due to the lower recombination of photogenerated electron hole pairs was observed for the ZnO annealed at 500 ºC compared to other temperatures. Under UV irradiation, the ZnO annealed at 500 ºC showed a maximum TC removal efficiency of 99.8% with 45.6% TC mineralization within 60 and 90 min, respectively. The enhanced catalytic activity could be attributed to the small crystallite size, high specific surface area, reduced-particle size, mesoporosity and lower rate of electron hole pair recombination with boosted charge separation. The scavenger studies indicated the active role of hydroxyl and superoxide anion radicals for the photocatalytic activity. A plausible mechanism was proposed based on the scavenger studies. Moreover, the ZnO annealed at 500 ºC unveiled high reusability for seven consecutive cyclic experiments without substantial loss in its performance, confirming its photostability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nidhi Prajapati, Suryapratap J. Sharma, Nagaiyan Sekar, C. N. Murthy
{"title":"Effect of TiO2, Nb2O5, and RGO in a ternary nanocomposite for efficient dye-sensitized solar cells","authors":"Nidhi Prajapati, Suryapratap J. Sharma, Nagaiyan Sekar, C. N. Murthy","doi":"10.1007/s10854-026-18566-1","DOIUrl":"10.1007/s10854-026-18566-1","url":null,"abstract":"<div><p>The ternary nanocomposite material, incorporating titanium dioxide (TiO<sub>2</sub>), niobium pentoxide (Nb<sub>2</sub>O<sub>5</sub>), and reduced graphene oxide (RGO), was successfully synthesized via the hydrothermal method. This material is referred to as TNR ternary nanocomposite. This material was intended to be utilized as a photoanodic material with N719 dye as a sensitizer in dye-sensitized solar cells (DSSCs) to enhance their performance. The inclusion of RGO into TiO<sub>2</sub> and Nb<sub>2</sub>O<sub>5</sub> significantly enhances the charge transfer properties, which are capable of reducing recombination and overall performance of the TNR ternary nanocomposite. Consequently, this may improve charge transfer rates and efficiency within the device. The screen-printing method was employed to coat the photoanode, chosen for its simplicity and cost-effectiveness. The properties and structure of the TNR ternary nanocomposite were characterized using advanced techniques such as X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and electrochemical analysis. The effectiveness of the TNR ternary nanocomposite was evaluated through analyses of its I–V characteristics and electrochemical impedance (EIS), revealing a power conversion efficiency (PCE) of 11.20%. Additionally, the filling factor (FF), short-circuit current density (Jsc), and open-circuit potential (Voc) were determined to be 0.492, 27.90 mA cm<sup>−2</sup>, and 814.35 mV, respectively. Notably, the efficiency hierarchy of the TNR ternary nanocomposite exceeded that of TiO<sub>2</sub> by 56.69%. Therefore, TNR ternary nanocomposite is a promising candidate for advancing the field of DSSCs.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Formation mechanism and optical/magnetic properties of high-entropy (FeCuMn)(WMo)O4-xSx nanosheets synthesized via hydrothermal method","authors":"Huawei Huang","doi":"10.1007/s10854-026-18470-8","DOIUrl":"10.1007/s10854-026-18470-8","url":null,"abstract":"<div><p>Breaking the NIR-II bottleneck, conventional inorganic semiconductors have long suffered from inadequate optical absorption, limiting their phototherapeutic efficacy. Here, we report a paradigm-shifting breakthrough: the first-ever hydrothermal synthesis of high-entropy (FeCuMn)(WMo)O<sub>4₋x</sub>S<sub>x</sub> nanosheets. By overcoming the fundamental immiscibility of five transition metals, our monoclinic nanosheets unlock an unprecedented broadband absorption spanning 400–1400 nm, achieving record-high photothermal conversion in both the NIR-I and NIR-II biological windows (ΔT = 38 °C at 808 nm). Remarkably, this high-entropy configuration simultaneously endows the material with strong T<sub>1</sub>/T<sub>2</sub> magnetic relaxivity, enabling novel dual-modal MR imaging capability. This first demonstration of integrating photothermal and magnetic functionalities via hydrothermal high-entropy engineering opens a new avenue for theranostic nanoplatforms.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Torchynska, A. D. Rivero Chavez, B. El Filali, G. Polupan
{"title":"The impact of Ga and In co-doping on structural, optical, and electrical characteristics of Mg0.20Zn0.80O films for TCO applications","authors":"T. Torchynska, A. D. Rivero Chavez, B. El Filali, G. Polupan","doi":"10.1007/s10854-026-18539-4","DOIUrl":"10.1007/s10854-026-18539-4","url":null,"abstract":"<div><p>Mg<sub>x</sub>Zn<sub>1</sub>₋<sub>x</sub>O alloys are important semiconductors for ultraviolet (UV) devices. However, a key limitation to the application of Mg<sub>x</sub>Zn<sub>1</sub>₋<sub>x</sub>O films is their insufficient electrical conductivity. In this work, we investigate the synergistic effect of co-doping with two different donor elements on the electrical conductivity of Mg<sub>0.20</sub>Zn<sub>0.80</sub>O films, along with the impact of this co-doping on structural, photoluminescence and optical characteristics. The Mg<sub>0.20</sub>Zn<sub>0.80</sub>O films grown by spray pyrolysis on quartz and (100)-oriented p-type monocrystalline Si substrates and co-doped with a fixed In concentration (2 at%) and varying Ga concentrations (0.5–2.5 at%) were investigated. The films exhibit a wurtzite crystal structure, the transmittance of 80–95% in the spectral range 300–800 nm, and the well-defined absorption edges. It was found that co-doping with Ga and In, whose ionic radii are smaller (Ga: 0.64 Å) and larger (In: 0.80 Å), respectively, than those of Mg (0.72 Å) and Zn (0.74 Å), shifts the onset of the self-compensation process toward higher donor concentrations and significantly reduces the electrical resistivity of the films to 7.65 × 10⁻<sup>4</sup> Ω·cm. Simultaneously, this co-doping induces the structural reorientation of the grains in the films and increases the intensity of the near band edge (NBE) photoluminescence. The obtained Mg<sub>0.20</sub>Zn<sub>0.80</sub>O:Ga:In films are promising transparent conducting oxides (TCOs) for ZnO-based optoelectronic and photoelectronic devices, including displays, touch panels, photodiodes, solar cells and other transparent electronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nitin S. Choudhari, Sanjaykumar N. Dalvi, Pranali A. Ghule, Almas M. Mujawar, Pooja B. More, Prashant K. Baviskar, Meghana H. Joshi
{"title":"Photovoltaic performance of Ti-doped BiOCl semiconductor photoanodes sensitized with N3 and N719 dyes for dye-sensitized solar cells","authors":"Nitin S. Choudhari, Sanjaykumar N. Dalvi, Pranali A. Ghule, Almas M. Mujawar, Pooja B. More, Prashant K. Baviskar, Meghana H. Joshi","doi":"10.1007/s10854-026-18563-4","DOIUrl":"10.1007/s10854-026-18563-4","url":null,"abstract":"<div><p>Bismuth oxychloride (BiOCl) is a layered semiconductor with potential for use as a photoanode material in dye-sensitized solar cells (DSSCs); however, its photovoltaic response is limited by its wide band gap and restricted visible-light absorption. In this study, pure BiOCl and Ti-doped BiOCl photoanodes with nominal Ti/Bi atomic ratios corresponding to 1.59 at.%, 2.34 at.%, and 4.19 at.% were synthesized by a chemical co-precipitation method and investigated in DSSCs sensitized with N3 and N719 dyes. X-ray diffraction and Raman analyses confirmed the formation of tetragonal BiOCl without detectable secondary phases. UV–visible analysis showed a gradual decrease in the optical band gap from 3.28 eV for pure BiOCl to 3.12 eV for 4.19 at.% Ti–BiOCl. FESEM analysis revealed hierarchical microsphere-like structures composed of interconnected nanosheets, which may provide favorable surfaces for dye adsorption and electrolyte diffusion. Photovoltaic measurements under AM 1.5G illumination showed that Ti incorporation modified the photovoltaic response of BiOCl photoanodes. The 4.19 at.% Ti–BiOCl photoanode produced PCEs of 0.452% and 0.424% for N3- and N719-sensitized DSSCs, respectively, compared with 0.384% and 0.393% for pure BiOCl. Although Ti incorporation improved the PCE relative to pure BiOCl, the absolute efficiencies remained limited. These results indicate that Ti incorporation can modify the structural, optical, and photovoltaic properties of BiOCl, while further optimization of dye loading, photoanode thickness, interfacial charge transfer, electrolyte composition, and device architecture is required to improve the overall DSSC efficiency.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Maamon A. Farea, Mohammad N. Murshed, Hamed Y. Mohammed, Norliana Yusof, Najlaa D. Alharbi
{"title":"Sulfate-modified BiFeO3 nanostructure for high-response H2S chemiresistive sensing","authors":"Maamon A. Farea, Mohammad N. Murshed, Hamed Y. Mohammed, Norliana Yusof, Najlaa D. Alharbi","doi":"10.1007/s10854-026-18590-1","DOIUrl":"10.1007/s10854-026-18590-1","url":null,"abstract":"<div><p>Sulfate-engineered bismuth ferrite nanostructures (BiFeO<sub>3</sub>–S<sub>x</sub>, x = 10, 15, and 20%) were fabricated via a glycine-assisted sol–gel combustion route and systematically evaluated as chemiresistive sensors for hydrogen sulfide (H<sub>2</sub>S) detection. Structural and spectroscopic characterization confirmed the presence of sulfate species in all modified samples; BiFeO<sub>3</sub>–S<sub>15</sub> retained the single-phase rhombohedral structure, whereas secondary phases were detected at 10 and 20% sulfate. Among the compositions studied, BiFeO<sub>3</sub>–S<sub>15</sub> displayed the most favorable textural properties, combining a larger specific surface area with a well-developed porous morphology, as verified by BET and AFM analyses. At an optimized operating temperature of 200 °C, BiFeO<sub>3</sub>–S<sub>15</sub> achieved a peak sensing response of 98 toward 60 ppm H<sub>2</sub>S, substantially outperforming both pristine BiFeO<sub>3</sub> and the other sulfate-modified samples. The optimized sensor further exhibited rapid, reversible response–recovery kinetics, robust repeatability, and pronounced selectivity over interfering gases, including NO<sub>2</sub>, SO<sub>2</sub>, CO, and NO, at equivalent concentrations, while retaining stable output over a 14-day continuous monitoring period. Collectively, these findings establish sulfate modification as an effective route to enhancing the gas-sensing performance of BiFeO<sub>3</sub>-based perovskites, underscoring their promise for real-time air-quality monitoring and environmental pollution control.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Tailoring oxide shell thickness of FeSi soft magnetic composites via in situ oxidation and its effects on magnetic properties","authors":"Ziru Zheng, Xiaoyu Wang, Kun Peng","doi":"10.1007/s10854-026-18553-6","DOIUrl":"10.1007/s10854-026-18553-6","url":null,"abstract":"<div><p>Soft magnetic composites (SMCs) with high saturation magnetization and low loss are urgently demanded to satisfy the requirement of modern electronic devices. In this work, Fe<sub>3</sub>O<sub>4</sub> shell is formed on FeSi particles via in situ oxidation method; its growth is controlled by a diffusion and reaction process, and the microstructure and thickness of Fe<sub>3</sub>O<sub>4</sub> shell can be tailored by adjusting the oxidation time to regulate the magnetic properties of SMCs. High saturation magnetization and permeability of FeSi/Fe<sub>3</sub>O<sub>4</sub> SMCs can be attributed to ferromagnetic properties and controllable thickness of Fe<sub>3</sub>O<sub>4</sub> shell. The formation of high resistivity Fe<sub>3</sub>O<sub>4</sub> shell decreases the inter-particle eddy current loss by ensuring high electrical resistivity between magnetic particles and intra-particle eddy current by the skin effect. Fe<sub>3</sub>O<sub>4</sub> shell thickness plays an important role in the performance of SMCs; the optimum magnetic properties of permeability (<i>μ</i>) 59, a high magnetization of 174.5 emu/g and a low magnetic loss of 139.24 mW/cm<sup>3</sup> at 40 mT and 100 kHz can be obtained in FeSi/Fe<sub>3</sub>O<sub>4</sub> SMCs with 0.62 μm oxides thickness by oxidizing for 60 min; its DC-bias performance is about 67% at 100 Oe.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shiju Yang, Libing Qian, Yunjie Ping, Zhe Liu, Chunqing He
{"title":"Fabrication of α-Bi2O3, β-Bi2O3, and β-Bi2O3/SGO composite: correlation between structure and electrochemical performance","authors":"Shiju Yang, Libing Qian, Yunjie Ping, Zhe Liu, Chunqing He","doi":"10.1007/s10854-026-18548-3","DOIUrl":"10.1007/s10854-026-18548-3","url":null,"abstract":"<div><p>In this work, α-Bi<sub>2</sub>O<sub>3</sub> and β-Bi<sub>2</sub>O<sub>3</sub> were successfully synthesized via a hydrothermal calcination route, and their electrochemical properties were systematically studied. The results demonstrate that the low-temperature stable α-phase Bi<sub>2</sub>O<sub>3</sub> presents superior electrochemical performance. This can be ascribed to its stable structure, which not only effectively suppresses surface side reactions but also preserves structural integrity during repeated charge–discharge cycling. To further enhance the electrochemical performance of Bi<sub>2</sub>O<sub>3</sub>, the Bi<sub>2</sub>O<sub>3</sub>–SGO composite was rationally designed and successfully synthesized via a composite strategy combining β-Bi<sub>2</sub>O<sub>3</sub> and sulfonated graphene oxide (SGO). Analysis of the charge storage mechanism reveals that the addition of a small amount of SGO does not introduce surface-controlled capacitance into the material. The incorporation of SGO can enhance the electrical conductivity and optimize the microscopic morphology of the composite, as well as alleviate the volume expansion during the charge–discharge process. This effectively improves the intrinsic structural instability of β-Bi<sub>2</sub>O<sub>3</sub>, thereby synergistically boosting the electrochemical performance of the electrode material. The as-fabricated β-Bi<sub>2</sub>O<sub>3</sub>/SGO composite delivers a high specific capacitance of 1105 F g<sup>−1</sup> at 1 A g<sup>−1</sup>. It also possesses superior rate capability with 758 F g<sup>−1</sup> maintained at 50 A g<sup>−1</sup> and exhibits satisfactory cycling durability, achieving 88% capacitance retention over 2000 consecutive cycles. As-obtained asymmetric supercapacitors with NiCoO<sub>2</sub> as the positive electrode and β-Bi<sub>2</sub>O<sub>3</sub>/SGO as the negative electrode possess a superior energy density of up to 38.5 Wh kg<sup>−1</sup>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149098154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}