Journal of Materials Science: Materials in Electronics最新文献_第10页

Tunable electromagnetic and broadband absorption of FeNi decorated SiC nanowires absorbents 氮化铁装饰碳化硅纳米线吸波材料的可调谐电磁吸收和宽带吸收

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-04 DOI: 10.1007/s10854-024-13650-w

Liuliu Yan, Yuansheng Wang, Xuan wang, Wanchong Li, Rurong Zou, Wei Huang, Zhuo Yin, Dongmei Jia, Yongqing Li

{"title":"Tunable electromagnetic and broadband absorption of FeNi decorated SiC nanowires absorbents","authors":"Liuliu Yan, Yuansheng Wang, Xuan wang, Wanchong Li, Rurong Zou, Wei Huang, Zhuo Yin, Dongmei Jia, Yongqing Li","doi":"10.1007/s10854-024-13650-w","DOIUrl":"10.1007/s10854-024-13650-w","url":null,"abstract":"<div>With the widespread use of wireless communication technologies, high-performance, easy-to-volume-produce electromagnetic (EM) absorption materials are in urgent need. In this work, FeNi nanosheets decorated silicon carbide nanowires (SiCnws) hybrids are prepared by a simple in-situ reduction method. Microstructural studies show that FeNi nanosheets are uniformly distributed on the surface of SiCnws, with some other incompact spherical FeNi nanoparticles dissociating out of SiCnws. Benefiting from multidimensional heterostructures and the synergistic effect of multiple loss mechanisms, the SiCnws@FeNi hybrids exhibit enhanced EM absorption performance compared to pure SiCnws. It is worth noting that the excessive introduction of magnetic FeNi leads to a degeneration of EM absorption in the SiC nws@FeNi-0.6 sample due to the decline of attenuation capability and impedance mismatch. As a result, the SiCnws@FeNi-0.4 sample exhibits the best EM absorption with an effective absorption bandwidth (EAB) of 5.4 GHz at only 1.7 mm, and the minimum reflection loss reaches up to − 50.76 dB at 2.8 mm. Considering their simple preparation method and excellent EM absorption performance, the as-prepared SiCnws@FeNi composite material is expected to be a candidate material for EM absorption with practical application prospect.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142573730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis, crystal growth, structural characterization and third-order NLO properties of caesium trihydrodiphthalate 三氢二邻苯二甲酸铯的合成、晶体生长、结构表征和三阶 NLO 性能

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-03 DOI: 10.1007/s10854-024-13771-2

C. Balakrishnan, S. P. Meenakshisundaram, P. Suppuraj, S. Bhuvaneshwari, G. Vinitha

{"title":"Synthesis, crystal growth, structural characterization and third-order NLO properties of caesium trihydrodiphthalate","authors":"C. Balakrishnan, S. P. Meenakshisundaram, P. Suppuraj, S. Bhuvaneshwari, G. Vinitha","doi":"10.1007/s10854-024-13771-2","DOIUrl":"10.1007/s10854-024-13771-2","url":null,"abstract":"<div>Single crystals of (benzene-1,2-dicarboxylic acid-κO)(2-carboxybenzoato-κO) caesium(I), also known as caesium trihydrodiphthalate (CsADP), were successfully synthesized through a controlled hydrothermal reaction between caesium sulfate and phthalic acid in a 1:2 molar ratio. The resulting crystals, grown over 26–28 days, were analyzed using various techniques. FT-IR spectroscopy revealed characteristic vibrational bands, while powder XRD and single-crystal XRD confirmed phase purity and structural properties. CsADP crystallizes in the orthorhombic system with a centrosymmetric space group (Pbcn). The caesium ion is coordinated by ten oxygen atoms, with Cs···O bond lengths ranging from 3.085 to 3.610 Å, forming a distorted bicapped square antiprism geometry. Thermal analysis indicated stability up to 240 °C, while UV–Vis spectroscopy demonstrated transparency, with a bandgap of 4.17 eV. Nonlinear optical (NLO) properties were investigated using Z-scan techniques, revealing reverse saturation absorption and a strong third-order susceptibility, highlighting CsADP as a promising candidate for NLO applications. Hirshfeld surface analysis identified dominant O···H/H···O interactions, contributing to its NLO behaviour. Additionally, molecular electrostatic potential and Mulliken population analysis provided insights into the charge distribution within the structure.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and characterization of zinc hydroxide Zn(OH)2 thin film for high-performance supercapacitors using SILAR method 利用 SILAR 法合成高性能超级电容器用氢氧化锌 Zn(OH)2 薄膜并确定其特性

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-03 DOI: 10.1007/s10854-024-13768-x

Aruna A. Mancharkar, Milind R. Bodke, Dhanaji B. Malavekar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Jin Hyeok Kim, Sandesh R. Jadkar, Habib M. Pathan

{"title":"Synthesis and characterization of zinc hydroxide Zn(OH)2 thin film for high-performance supercapacitors using SILAR method","authors":"Aruna A. Mancharkar, Milind R. Bodke, Dhanaji B. Malavekar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Jin Hyeok Kim, Sandesh R. Jadkar, Habib M. Pathan","doi":"10.1007/s10854-024-13768-x","DOIUrl":"10.1007/s10854-024-13768-x","url":null,"abstract":"<div>Zinc hydroxide [Zn(OH)2] is a multifaceted substance with significant potential in diverse domains such as energy storage, catalysis, and environmental cleanup. Zn(OH)2 is appropriate for pseudocapacitor applications because of its strong electrochemical activity, cost-effectiveness, and environmentally favorable features. In this investigation, we have effectively synthesized nanoflakes of zinc hydroxide [Zn(OH)2] as electrode material on stainless steel substrates for supercapacitor applications using the successive ionic layer adsorption and reaction (SILAR) technique. The performance of the electrode material is enhanced by nanoflakes, which encourage electrolyte diffusion and provide more channels for ion migration. Optical absorption analysis unveiled a direct band transition, showcasing a band gap of 3.35 eV. The synthesized material underwent characterization through scanning electron microscopy (SEM) and X-ray diffraction (XRD), confirming their well-defined morphology and crystalline structure with uniform distribution. The cyclic voltammetry as well as galvanostatic charge–discharge experiments were performed in a three-electrode configuration using a 1 M KOH aqueous electrolyte. The electrochemical results demonstrated that the Zn(OH)2 nanoflakes thin film electrode revealed a remarkable specific capacitance of 123 F g−1 at a current density of 1 A g−1. Additionally, it displayed an extended cycling lifespan, retaining 72% of its original capacitance even afterward undergoing 5000 cycles at a scan rate of 100 mV s−1.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the effects of thermal annealing to PEDOT:PSS on the photovoltaic response of hybrid solar cells 研究 PEDOT:PSS 的热退火对混合太阳能电池光电响应的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-03 DOI: 10.1007/s10854-024-13774-z

L. A. Torres-Bautista, J. Sastré-Hernández, R. Mendoza-Pérez, José A. Del Oso, J. Aguilar-Hernández

{"title":"Investigation of the effects of thermal annealing to PEDOT:PSS on the photovoltaic response of hybrid solar cells","authors":"L. A. Torres-Bautista, J. Sastré-Hernández, R. Mendoza-Pérez, José A. Del Oso, J. Aguilar-Hernández","doi":"10.1007/s10854-024-13774-z","DOIUrl":"10.1007/s10854-024-13774-z","url":null,"abstract":"<div>This work presents research results concerning to the fabrication of hybrid solar cells in a superstrate configuration with the following structure: glass/SnO2:F/ZnO + CdS/CdTe + CdCl2-TT/PEDOT:PSS-TT/Cu-Mo. After Cadmium Telluride (CdTe) absorber layer processing, the organic conjugated polymer Poly(3,4-ethylenedioxythiophene): poly(styrene sulphonate) (PEDOT:PSS) was deposited with a thickness around 50 nm, then a thermal annealing (TA) was carried out varying annealing time (20-40 min) and temperature (80-120 °C). The physical properties and output electrical parameters of the devices were measured and compared with a reference solar cells without TA. A decrease of the resistivity values was reached as a result of the incorporation of PEDOT:PSS on CdTe as a hole transport layer. CdTe/PEDOT:PSS structure was characterized by profilometry, four-probe method, UV–Vis spectroscopy, Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS) and Raman spectroscopy. The electrical performance of the fabricated hybrid solar cells was analysed through the current density vs. voltage (J vs. V) characteristic, External Quantum Efficiency (EQE) measurements and the values spread distribution for each electrical parameter was also discussed. A highest conversion efficiency around 15.2% was obtained for a device in which the TA was performed at 100 °C during 30 min with output electrical parameters values of Voc ~ 0.778 V, Jsc ~ 34.0 mA/cm2, FF ~ 0.55 and EQE values above 55%, resulting this in an improvement of the use of PEDOT:PSS in hybrid solar cells. A monitoring of the degradation effect of the output electrical values was carried out after a period of 24 months and an average degradation rate around 20% was found, however for devices processed at higher temperatures of TA, degradation rate of the conversion efficiency was at least 3%.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142573671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band gap tuning of Ce doping in Zn:Zr system for enhanced visible light-driven photocatalysis 调整 Zn:Zr 系统中掺杂 Ce 的带隙以增强可见光驱动的光催化能力

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-03 DOI: 10.1007/s10854-024-13734-7

J. Roselin Jeyaseeli, A. Philominal, P. Jaikumar, Varuna Kumaravel, Senthil Kumar Sadasivam

{"title":"Band gap tuning of Ce doping in Zn:Zr system for enhanced visible light-driven photocatalysis","authors":"J. Roselin Jeyaseeli, A. Philominal, P. Jaikumar, Varuna Kumaravel, Senthil Kumar Sadasivam","doi":"10.1007/s10854-024-13734-7","DOIUrl":"10.1007/s10854-024-13734-7","url":null,"abstract":"<div>The environmental threat posed by industrial dyes necessitates the development of efficient photocatalytic systems for their degradation. This study focuses on the Ce-doped Zn:Zr system as an innovative solution for visible-light-driven photocatalytic degradation of textile dyes offering significant environmental and industrial benefits. The Ce-doping effect on the photocatalytic efficiency of the Zn:Zr system was investigated. Both undoped and Ce-doped Zn:Zr systems exhibited hexagonal nanostructures with high atomic percentages of Zn, while Ce was incorporated at lower percentages. X-ray diffraction confirmed the unaltered hexagonal ZnO, tetragonal, and monoclinic ZrO2 crystal structures in the systems. The peak broadening in the Ce-doped samples indicates successful doping. Even the tiniest alteration in band gap resulted in a dramatic increase in methylene blue dye degradation up to 98.4%, significant at p < 0.05. This enhanced efficiency is attributed to the heterogeneous pairing mechanism which improves charge carrier separation with superoxide anions and singlet oxygen identified as the primary reactive species. The findings demonstrate the applicability of band gap engineering in organic pollutant degradation and highlight the potential of Ce-doped Zn:Zr systems as a cost-effective and energy-efficient solution for industrial wastewater management.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gamma ray irradiation effect on optical, dielectric, ferroelectric and ferroelectric fatigue properties of neodymium doped rubidium titanyl phosphate single crystal (Nd:RbTiOPO4) 伽马射线辐照对掺钕铷钛磷酸盐单晶体（Nd:RbTiOPO4）的光学、介电、铁电和铁电疲劳特性的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-03 DOI: 10.1007/s10854-024-13764-1

Arulmani Marimuthu, Venkatraj Athikesavan, Sinitha B. Nair, G. Thilakavathi

{"title":"Gamma ray irradiation effect on optical, dielectric, ferroelectric and ferroelectric fatigue properties of neodymium doped rubidium titanyl phosphate single crystal (Nd:RbTiOPO4)","authors":"Arulmani Marimuthu, Venkatraj Athikesavan, Sinitha B. Nair, G. Thilakavathi","doi":"10.1007/s10854-024-13764-1","DOIUrl":"10.1007/s10854-024-13764-1","url":null,"abstract":"<div>Neodymium doped rubidium titanyl phosphate single crystal was grown from the high-temperature flux technique. To investigate the material stability in the radiation background, for the first-time neodymium doped rubidium titanyl phosphate single crystal was subjected to gamma ray irradiation. After the irradiation of the 2.6-kGy gamma-radiation, the material’s optical and electrical properties were analyzed and the results have been compared to that of non irradiated Nd: RTP single crystal. A small absorption band was found in the visible region around 0.08 higher than the non -irradiated Nd: RTP single crystal and there is a small variations in the band gap energy, 3.61 eV for non -irradiated Nd: RTP single crystal and 3.54 eV for gamma irradiated Nd: RTP single crystal. The dielectric constant, dielectric loss, and AC conductivity was observed for non-irradiated and gamma irradiated Nd: RTP single crystals. The Gamma radiation irradiated Nd: RTP single crystal shows little higher value of dielectric constant, loss and conductivity around 0.07, 0.05 and 1.2 S/cm from the non irradiated sample respectively. From the ferroelectric studies there is an increase in polarization and coercive field were observed in the gamma-ray irradiated sample from that of non-irradiated Nd: RTP single crystal. This can be attributed to radiation-induced defects is local strains and movements of ions inside the crystal. Besides the Gamma irradiated sample shows fatigue free nature over the 5000 cyclic period. The gamma-ray induced a defect in material but not far away from application requirements and the radiation effect had been removed through the thermal annealing process.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Compliance current dependent multilevel resistive switching in Titanium dioxide nanosheet based memory devices 基于二氧化钛纳米片的存储器件中与顺从电流相关的多级电阻开关

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-02 DOI: 10.1007/s10854-024-13777-w

Vindya Shetty, Shobith M. Shanbogh, P. Anjaneyulu, K. Deepak

{"title":"Compliance current dependent multilevel resistive switching in Titanium dioxide nanosheet based memory devices","authors":"Vindya Shetty, Shobith M. Shanbogh, P. Anjaneyulu, K. Deepak","doi":"10.1007/s10854-024-13777-w","DOIUrl":"10.1007/s10854-024-13777-w","url":null,"abstract":"<div>The rise of two-dimensional (2D) materials has unveiled numerous potentialities in future logic and memory devices. In this work, a resistive switching memory device based on 2D Titanium dioxide nanosheet (TiO2 NS) is fabricated with a capacitor-like device structure in which TiO2 NS is sandwiched between silver (Ag) and Fluorine-doped tin oxide (FTO) electrodes. The spin-coating method is used to coat the hydrothermally synthesized TiO2 NS on the FTO substrate and then silver paint is used as top contact to complete the device Ag/TiO2 NS/FTO. Here, TiO2 NS based resistive switching device also called as memristor shows co-existence of bipolar and unipolar resistive switching depending on the voltage sweep direction. The device is suitable for memory applications as its ON/OFF current ratio is of the order 102. The memory device shows 24 multiple resistive states (equivalent to 4.5 bits), which are obtained by tuning the compliance current from 0.2 to 4.8 mA. The multilevel resistive switching (RS) realized is attributed to the evolution and rupture of conductive filament in the TiO2 NS. A retention test for multiple resistive states is conducted and it shows a stability up to 5 × 103 s. The device also showed good endurance for 5 × 103 cycles without any fluctuations in performance.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preparation of PAAS/GL/GO anti-freezing conductive hydrogels based on chemical cross-linking networks and their application in wearable sensors 基于化学交联网络的 PAAS/GL/GO 抗冷冻导电水凝胶的制备及其在可穿戴传感器中的应用

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-02 DOI: 10.1007/s10854-024-13773-0

Kai Wang, Jiankang Hu, Yutong Zhang, Lei Xiao

{"title":"Preparation of PAAS/GL/GO anti-freezing conductive hydrogels based on chemical cross-linking networks and their application in wearable sensors","authors":"Kai Wang, Jiankang Hu, Yutong Zhang, Lei Xiao","doi":"10.1007/s10854-024-13773-0","DOIUrl":"10.1007/s10854-024-13773-0","url":null,"abstract":"<div>Conductive hydrogels have potential applications in the field of wearable devices as carrier materials for flexible strain sensors. In this work, antifreeze filler glycerol (GL) and conductive filler graphene oxide (GO) were introduced into sodium polyacrylate (PAAS) chemical cross-linking network hydrogels, and the PAAS/GO/GL antifreeze conductive hydrogels were prepared by one-pot method. The structures and properties of the hydrogels were characterized and tested. The results showed that the addition of GO improved the mechanical properties and conductivity of the hydrogel. When the addition of GO was 0.6 wt%, the tensile strength of PAAS/GO/GL hydrogel reached the maximum of 0.215 MPa, the corresponding elongation at break reached 1180%, and the conductivity reached 1.056 S·m−1 at room temperature. The addition of GL resulted in good freezing resistance and moisture retention of the hydrogel, with a conductivity of 0.846 S·m−1 even after freezing at −20 °C. The PAAS/GO/GL hydrogel showed good sensing performance. When the tensile deformation reached 600%, the gauge factor (GF) reached 10.82. In addition, PAAS/GO/GL hydrogel also has good self-healing and adhesion, which has potential application value in flexible wearable sensors.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bio-mediated synthesis of Zr2+-doped MoO3 NPs: Its enhanced electrochemical sensing actions, antibacterial and photocatalytic applications 生物介导合成掺杂 Zr2+ 的 MoO3 NPs：增强电化学传感作用、抗菌和光催化应用

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-02 DOI: 10.1007/s10854-024-13723-w

K. S. Shruthi, N. Chandrasekhar, B. S. Surendra, M. Mahadeva Swamy, H. N. Sowmya, Mallikarjun B. Chougala, N. Basavaraju, N. Raghavendra

{"title":"Bio-mediated synthesis of Zr2+-doped MoO3 NPs: Its enhanced electrochemical sensing actions, antibacterial and photocatalytic applications","authors":"K. S. Shruthi, N. Chandrasekhar, B. S. Surendra, M. Mahadeva Swamy, H. N. Sowmya, Mallikarjun B. Chougala, N. Basavaraju, N. Raghavendra","doi":"10.1007/s10854-024-13723-w","DOIUrl":"10.1007/s10854-024-13723-w","url":null,"abstract":"<div>The significant characteristics of Mo(1–x)ZrxO3 nanoparticles (ZMO NPs) make it a potential candidate for assisting excellent electrochemical sensing (Lead and Paracetamol molecules) actions based on the development of modified ZMO NPs. The electrochemical measurements for investigating capacitance and resistance of modified graphite-ZMO NPs electrode under three-electrode system using 0.1 M HCl in the different scan rates of 0.01–0.05 V/s by cyclic-voltammetric (CV) and electrochemical impedance spectroscopic (EIS) analysis. The different mole ratios of Zr2+-doped MoxO3 nanoparticles (x = 3, 5, 7 and 9 mol %) were successfully developed by bio-mediated (Aegle Marmelos leaves) combustion process. The structural measurements of ensuing nanomaterials were systematically characterized through different advanced technologies. The physico-chemical property supports an excellent photocatalytic performance on Bromophenol Blue (BPB) textile industrial dye under irradiation of UV light. The maximum photocatalytic performance of Zr-MoO3 (7 mol) nanoparticle was recorded (98.7%) on BPB dye than those of host MoO3 nanoparticle (88.8%) at 105 min, which is supported by its lower kinetic constants 13.1 × 10−3 min−1. Also, the antibacterial activity of synthesized samples were tested against three different bacteria viz; Staphylococcus aureus, Escherichia coli, and Bacillus cereus by disk-diffusion method. This investigation supports new insights into the electrochemical sensing actions of various nanoparticles on various drug molecules and toxic pollutants.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of PMMA/PEG/SnO2/SiC quaternary multifunctional nanostructures and exploring the microstructure and optical features for radiation attenuation and flexible photonics applications 制备 PMMA/PEG/SnO2/SiC 四元多功能纳米结构，探索其微观结构和光学特性在辐射衰减和柔性光子学应用中的应用

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-02 DOI: 10.1007/s10854-024-13780-1

Zina Sattar, Ahmed Hashim

{"title":"Fabrication of PMMA/PEG/SnO2/SiC quaternary multifunctional nanostructures and exploring the microstructure and optical features for radiation attenuation and flexible photonics applications","authors":"Zina Sattar, Ahmed Hashim","doi":"10.1007/s10854-024-13780-1","DOIUrl":"10.1007/s10854-024-13780-1","url":null,"abstract":"<div>The current study aims to synthesize of poly-methyl methacrylate (PMMA)-polyethylene glycol (PEG) doped with tin oxide (SnO2) and silicon carbide (SiC) nanostructures for gamma ray attenuation and photonics applications. The microstructure and optical characteristics of PMMA-PEG-SnO2-SiC nanostructures were studied. The obtained results indicated that the PMMA-PEG absorbance increased of 69.6% and the transmittance decreased of 46% when the SnO2/SiC NPs ratio rise to 4.8 wt%. The PMMA-PEG’s energy gap (Eg) decreased to 3.95 eV when the SnO2/SiC NPs ratio reached of 4.8 wt%. The optical constants (coefficient of absorption (α), index of refractive (n), coefficient of extinction (k), real (ε1) and imaginary (ε2) parts of dielectric constants, and conductivity of optical (σop) were increased of 69.6%, 22.1%, 69.6%, 39.4%, 76.3, and 76.3%, respectively, when SnO2/SiC NPs reached of 4.8 wt% at wavelength (λ = 540 nm). These results make the PMMA-PEG-SnO2-SiC nanostructures are appropriate for optical and electronic applications. Finally, the gamma radiation attenuation coefficients were increased with rising nanoparticles concentrations. The (PMMA-PEG-SnO2-SiC) nanostructures have highest attenuation coefficients for gamma radiation.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0