Journal of Materials Science: Materials in Electronics最新文献

{"title":"Structure–property relationship of an organic crystal (E)-3-(4-(dimethylamino)phenyl)-1-(4-(methylthio)phenyl)prop-2-en-1-one through linear, nonlinear optical, molecular docking, and DFT investigations for optoelectronic applications","authors":"D. Sateesha,&nbsp;Sampath Chinnam,&nbsp;Guddekoppa S. Ananthnag,&nbsp;T. Chandra Shekhara Shetty,&nbsp;Itte Pushpavathi,&nbsp;G. Vinitha,&nbsp;S. Raghavendra","doi":"10.1007/s10854-025-14556-x","DOIUrl":"10.1007/s10854-025-14556-x","url":null,"abstract":"<div><p>Herein, we report the synthesis, characterization, nonlinear optical properties, DFT, and <i>in silico</i> docking studies of an organic crystal (<i>E</i>)-3-(4-(dimethylamino)phenyl)-1-(4-(methylthio)phenyl)prop-2-en-1-one(DAPMP). The single-crystal X-ray diffraction study established the crystal and molecular structure of DAPMP. The study also showed that the compound crystallized in monoclinic crystal system with space group P21/c. Additionally, DFT calculations at RwB97XD functional with the 6–311 + + G(d,p) basis set were performed to estimate the molecular geometry, electronic properties, and global parameters. In addition, in silico docking studies were conducted to determine the docking interactions and binding affinities with suitable receptors. The TGA/DTA analysis was used to study thermal stability, while the optical transparency of DAPMP was measured using UV–vis spectroscopy. The third-order nonlinear optical (TNLO) properties were studied by Z-scan technique. DAPMP exhibits a noteworthy two-photon absorption (β = 2.37X10^–4 cmW⁻¹), nonlinear refraction (n₂ = 4.37X10^–9 cm²W⁻¹) and a third-order nonlinear susceptibility (χ⁽³⁾ = 5.4X10^–4esu). These enhanced TNLO properties suggest the potential application of DAPMP crystal in optical communication and optical switching devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143655397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure analysis, linear/nonlinear optical characteristics, dielectric parameters characterization, and gamma-ray shielding of cobalt-doped TiO2 nanoparticles","authors":"B. M. Alotaibi,&nbsp;Ahmed S. Ali,&nbsp;Ahmed M. Hassan,&nbsp;Shams A. M. Issa,&nbsp;Hesham M. H. Zakaly","doi":"10.1007/s10854-025-14432-8","DOIUrl":"10.1007/s10854-025-14432-8","url":null,"abstract":"<div><p>Titanium dioxide nanoparticles are widely utilized in optoelectronics, dielectric applications, and radiation shielding. However, their limited structural and functional performance in advanced applications necessitates further improvement. In this study, cobalt doping was introduced as a strategy to enhance the structural, optical, dielectric, and gamma-ray shielding properties of TiO₂ nanoparticles. Cobalt-doped titanium dioxide nanoparticles (Co-TiO₂ NPs) were synthesized using the sol–gel method to evaluate their structural properties, linear and nonlinear optical characteristics, dielectric performance, and gamma-ray shielding efficiency. X-ray diffraction (XRD) analysis confirmed a tetragonal TiO₂ phase, with the introduction of a rhombohedral CoTiO₃ phase upon increasing cobalt content. The crystallite sizes, estimated through the Williamson-Hall method, increased from 47 to 70 nm as Co content increased. UV–Vis spectroscopy showed a bandgap shift from 3.86 eV to 4.07 eV with higher cobalt concentrations. The extinction coefficient and refractive index showed decreasing trends from 1.63 × 10^–4 to 1.3 × 10^–4, and from 3.02 to 2.66, respectively, with higher Co content while the dielectric constant increased, indicating improved optical and dielectric performance. The nonlinear refractive index (n₂) decreased from 3.6 × 10^–9 to 2.78 × 10^–9 with increasing Co doping, enhancing the material's potential for nonlinear optical applications. The third-order nonlinear susceptibility (χ⁽³⁾) values indicated that Co-TiO₂ nanoparticles possess significant nonlinear optical and suitability for optoelectronic devices. Among all the Co-TiO₂ samples, the TOC-10 sample exhibited the highest linear attenuation coefficient (LAC), demonstrating its superior effectiveness in gamma-ray shielding, particularly in the energy range of 0.015–0.1 MeV.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143668168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fill factor enhancement with graded interface hole-selective contact for silicon heterojunction solar cells: impact of recombination losses and contact resistivity","authors":"Shrestha Bhattacharya,&nbsp;Shahnawaz Alam,&nbsp;Ashutosh Pandey,&nbsp;Silajit Manna,&nbsp;Son Pal Singh,&nbsp;Vamsi Krishna Komarala","doi":"10.1007/s10854-025-14573-w","DOIUrl":"10.1007/s10854-025-14573-w","url":null,"abstract":"<div><p>The development of high-efficiency silicon heterojunction (SHJ) solar cells is primarily dependent on optimizing interface recombination losses (J₀) and series resistance components (R_s), which critically influence the cell's fill factor (FF). The hole-selective p-a-Si:H/ITO contact is optimized by coupling the graded boron-doped a-Si:H and indium tin oxide (ITO) layers’ electronic properties for low J₀ and contact resistance (ρ_c). The graded p-a-Si:H layer enabled a low defective interface at the n-type c-Si wafer, which has been investigated through J₀ at various stages of device fabrication<b>.</b> The carrier transport modification was analyzed by evaluating the J–V characteristics of the cell obtained under light, dark, and Suns-Voc conditions. The diode quality factor (n₁ ~ 0.89 &lt; 1), derived from the linear portion of the Suns-Voc characteristics of an optimized cell, indicates that within the voltage range of 0.60 to 0.75 V (near open-circuit voltage), the characteristics are somewhat affected by Auger recombination processes. This effect aids in achieving a higher fill factor (FF) than what is typically constrained by Shockley–Read–Hall recombination. With the optimized p-a-Si:H/ITO contact compared to the baseline cell process, the pseudo-FF enhanced from ~ 81.2% to ~ 85.1% (represents recombination and shunt losses), and the FF enhanced from ~ 75.1% to ~ 81.8% (due to reduced ρ_c of i + p/ITO from ~ 756 mΩ-cm² to ~ 406 mΩ-cm²), over all the cell efficiency has enhanced from ~ 21.0 to ~ 23.3%.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143655297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal treatment modification of copper–silicon alloy anode material with carbon coating on the surface","authors":"Chuanbin Tu,&nbsp;Guojun Xu,&nbsp;Jun Chen,&nbsp;Chenxin Jin,&nbsp;Haojun Gong,&nbsp;Ji Liu,&nbsp;Fugen Sun,&nbsp;Yong Li,&nbsp;Lang Zhou,&nbsp;Zhihao Yue","doi":"10.1007/s10854-025-14593-6","DOIUrl":"10.1007/s10854-025-14593-6","url":null,"abstract":"<div><p>In this paper, copper (Cu) nanoparticles is deposited on the surface of silicon (Si) particles by electroless deposition. Then the electrode is prepared by mixing the modified Si/C particles with conductive agents and adhesives. Finally, rapid thermal process (RTP) is used to treat the electrode, so that interfacial Cu–Si alloyed and uniform carbon-coated Si anode materials (Si/Cu₃Si/Cu@C) are obtained by one step. The reversible specific capacity remains 1362 mAh g⁻¹ after 100 cycles at 0.2 C (1 C = 4.2 A g⁻¹), which is 997 mAh g⁻¹ higher than that of Si electrode. Through the multiplier test, the specific capacity of Si/Cu₃Si/Cu@C holds on 604 mAh g⁻¹ at 2 C. The excellent electrochemical performance of Si/Cu₃Si/Cu@C composite materials is mainly attributed to the dual buffering media of nano-copper particles and carbon layers. Firstly, the presence of copper particles on the silicon surface can improve the overall conductivity and the volume expansion coefficient of silicon, thereby overcoming the rapid capacity decay of the electrode caused by excessive resistance. Secondly, the surface carbon layer can further alleviate the mechanical stress during the lithium intercalation and deintercalation process, effectively isolate the active material from the current collector, and ensure good electrical contact of the active particles and the stability of the surface SEI film.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The influence of Zr/Ti variation and defect dipoles on the piezoelectric properties of PMS-PZT ceramics","authors":"Rong Li,&nbsp;Zhaoyu Zhou,&nbsp;Zhen Shen,&nbsp;Yi Li,&nbsp;Xiang Xia,&nbsp;Xiumei Shi,&nbsp;Huimin Hao","doi":"10.1007/s10854-025-14577-6","DOIUrl":"10.1007/s10854-025-14577-6","url":null,"abstract":"<div><p>The piezoelectric properties of Pb(Mn_1/3Sb_2/3)_0.05Zr_xTi_yO₃(PMS-PZT) ceramics were systematically investigated by varying the Zr/Ti ratio and analyzing the role of defect dipoles in the microstructure and electrical properties. Experimental results reveal that adjusting the Zr/Ti ratio affects the grain size, oxygen vacancy concentration, and ferroelectric domain structure of the ceramics, thereby modulating the piezoelectric constant (<i>d</i>_<i>33</i>), mechanical quality factor (<i>Q</i>_<i>m</i>), and dielectric loss (<i>tanδ</i>) of the material. Significantly, the PMS-PZT ceramics with Zr/Ti of 47.5/47.5 show excellent temperature stability: the PMS-PZT ceramics retain more than 86% of their maximum piezoelectric constants at temperatures around 270 °C, and have loss tangent (<i>tanδ</i>) of less than 0.3% Furthermore, a weakening of the defect dipole pinning effect was observed, leading to a significant increase in the remanent polarization of the material. The variation of the current-electric field profile and Polarization–Electric field hysteresis loop with temperature is illustrated from the point of view of the ferroelectric domain switching.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring two-photon absorption and optical limiting properties of melt-grown 2,4-dinitroaniline (DNAN) single crystal under nanosecond pulsed laser excitation","authors":"Mohamad Asikali Abdul Hakkim,&nbsp;Rajesh Paulraj,&nbsp;T. C. Sabari Girisun","doi":"10.1007/s10854-025-14560-1","DOIUrl":"10.1007/s10854-025-14560-1","url":null,"abstract":"<div><p>An organic nonlinear optical single crystal of 2,4-dinitroaniline (DNAN) was successfully grown using the vertical Bridgman method for the first time. Differential thermal analysis revealed that DNAN has a melting point of 180 °C and a freezing point of 170 °C, indicating its thermal phase transition behavior. Single crystal X-ray diffraction analysis confirmed that the title compound crystallizes in the monoclinic system with space group P2_1/c. FT-Raman spectroscopy confirmed the retention of DNAN’s functional groups during the melt-to-crystal transformation. TG-DTA revealed that DNAN is thermally stable up to 190 °C and decomposition occurring at 300 °C. Vickers microhardness testing revealed good mechanical stability of DNAN exhibiting a reverse size indentation effect and classifying it as a soft material based on Mayer’s plot. Photoconductivity studies demonstrated that DNAN exhibits negative photoconductivity with ohmic behavior. UV-visible analysis revealed 60% transmittance in the 500-1000 nm range, with a cut-off wavelength at 486 nm. The optical band gap was determined to be 2.52 eV using Tauc’s plot. Photoluminescence analysis showed fluorescence emission at 513 nm under 350 nm excitation. Z-scan analysis using a 9 ns pulsed Nd:YAG laser at 532 nm revealed reverse saturation absorption. The material exhibited a nonlinear absorption coefficient of 1.38 × 10^–10 m/W and an optical limiting threshold of 2.24 GW/m², confirming its potential for optical limiting applications. Hirshfeld surface mapping highlighted intermolecular interactions contributing to nonlinearity and crystal stability. The 2D fingerprint plots revealed that O-H interactions (41.3%) are the most significant contributors to crystal packing.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143655267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement of magnetocaloric properties around Néel temperature in a polycrystalline system of Dy-substituted YMn2O5","authors":"H. Chouaibi,&nbsp;S. Mansouri,&nbsp;M. Balli,&nbsp;O. Chdil,&nbsp;M. Abbassi Eskandari,&nbsp;S. H. Bukhari,&nbsp;P. Fournier,&nbsp;E. Dhahri","doi":"10.1007/s10854-025-14518-3","DOIUrl":"10.1007/s10854-025-14518-3","url":null,"abstract":"<div><p>This paper deals with the magnetic and magnetocaloric characteristics of Dy-substituted YMn₂O₅ (Y_1−<i>x</i>Dy_<i>x</i>Mn₂O₅) with <i>x</i> values between 0.6 and 1, which were prepared through sol–gel method. X-ray diffraction and Raman measurements attest well the high quality of our polycrystalline samples, which crystallize in an orthorhombic structure. The vibrational properties of all detected modes at room temperature were identified by measuring and comparing the Raman phonon frequencies to the lattice dynamics calculations. As expected, magnetic study reveals that magnetization was enhanced by the substitution of Y³⁺ by Dy³⁺. The Dy-substituted YMn₂O₅ sets the Néel transition [T_N(Mn)] in the temperature range from 40 to 45K favoring the emergence of a transition at a very low temperature due to the long-range ordering of the Dy³⁺ magnetic moments below 13K [T_N(Dy)]. Dual peaks in the magnetic entropy change curve are observed being in good agreement with magnetization data, which enlarges the range of application of these materials. On the other hand, a large magnetocaloric effect is observed close to 13K which is mainly due to the ordering of Dy³⁺ magnetic moments. Also, the incommensurate antiferromagnetic transition of Mn magnetic moment taking place around 40K affects slightly the entropy change. Our investigation revealed that the refrigerant capacity (RC) of polycrystalline samples is greater compared to the average RC values for a, b, and c axes of single-crystal samples such as HoMn₂O₅ and TbMn₂O₅.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143655265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Probing structural and electrical properties of Ca2SnO4 with sintering temperature","authors":"Mohit Upadhyay,&nbsp;Shail Upadhyay","doi":"10.1007/s10854-025-14532-5","DOIUrl":"10.1007/s10854-025-14532-5","url":null,"abstract":"<div><p>This study used the solid-state reaction method to prepare a series of Ca₂SnO₄ ceramics of the CaO–SnO₂ system in the 1300–1500 °C temperature range. The effect of sintering temperature on the phase composition, unit cell, pore densification, thermal stability, dielectric properties, and DC conductivity has been studied. Further, we have studied dielectric and electrical properties in the radio frequency range (1 KHz–2 MHz) as a function of temperature (100–600 °C). It was observed that the dielectric constant has a maximum contribution of interfacial polarization. The variation in the dielectric constant value (14.26–34.88) is small as compared to the dielectric loss/dissipation factor (0.04–10.97) at 1 kHz frequency as a function of sintering temperature. The activation energy for DC conduction for the sample sintered at 1300 °C was found to be 0.88 eV, whereas for the sample sintered at 1400 °C, it was found to be 0.74 eV. The measured activation energy lies within the expected range for the movement of oxygen ion vacancies in ceramic oxides. Therefore, the decrease in activation energy observed at elevated sintering temperatures is linked to the higher concentration of oxygen vacancies. Negligible thermal expansion up to 1500 °C makes Ca₂SnO₄ a potential candidate for low-cost substrate applications. The oxide can also be useful for thermally stable capacitors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143655266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room temperature current conduction mechanisms in Ba0.5Sr0.5TiO3 and Ba0.5Sr0.5TiO3/TiO2 multilayer memristor structures","authors":"Ozlem Akin,&nbsp;Hasan Efeoglu","doi":"10.1007/s10854-025-14536-1","DOIUrl":"10.1007/s10854-025-14536-1","url":null,"abstract":"<div><p>In this study, pure BaSrTiO₃ (BST) thin films and layered BST/TiO₂ thin films were fabricated on Cr/SiO₂/Si substrates for a possible fourth passive device in electronics called a memristor. Radio frequency- and high-power impulse magnetron sputtering-based reactive sputtering was used for the deposition of films. While analyzing the memristor behavior by IV-t measurement at room temperature, optical, structural, surface morphology, thermal annealing effect, and current conduction mechanisms were investigated. The structures gained memristive behavior due to the oxygen vacancies displaced by the effect of annealing. As bipolar switching was observed in all memristor structures, the switching mechanism was identified as the valance change mechanism, in which conductivity is mostly provided by Poole–Frenkel and Schottky emission conduction mechanisms.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14536-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A study on the correlation between the precursor concentration and the structural, optical, electrical, and photoconductive properties of zinc oxide thin films","authors":"Jenu Santhosh Jayanth,&nbsp;E. Ashlyn Kirupa","doi":"10.1007/s10854-025-14530-7","DOIUrl":"10.1007/s10854-025-14530-7","url":null,"abstract":"<div><p>ZnO thin films were deposited on glass substrates using spray pyrolysis technique with zinc acetate as the precursor salt. A systematic investigation was conducted by preparing three distinct ZnO thin film samples, wherein the molar concentration of the precursor solution was varied from 0.15 M to 0.25 M. The thickness of the thin films is in the range of a few micrometers. It is observed from X-ray diffraction studies that the deposited films exhibit a hexagonal structure with a preferred orientation along the (002) plane. The optical band gap energy of the thin films was calculated using the tauc plot and the obtained values lie within the range of 3.14 to 3.2 eV. Urbach energy was calculated from the band tail plot, and it was found that the sample fabricated with 0.2 M precursor concentration has the lowest urbach energy at 0.11 eV. The activation energy of the samples determined using the Arrhenius plot lies within the range of 0.76 eV – 1.37 eV. I-V characterization done on the samples under dark conditions and under illumination revealed that the sample prepared with 0.25 M precursor concentration has the highest dark and photocurrent at 1 V, while the 0.2 M sample has the highest sensitivity to photons. From transient photoconductive studies, it was observed that when illuminated with a UV lamp (365 nm) the 0.2 M sample exhibits the highest photocurrent value of 10 µA surpassing the photocurrent of the other two samples by a factor of approximately three. The correlation between the crystallinity, morphology, urbach energy, and photoconductive parameters of the samples was discussed.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}