Influence of growth temperature on secondary phases in CZTS thin films prepared via spray pyrolysis

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-19 DOI:10.1007/s10854-025-15771-2

Khaled Majed Alsubaie, Ahmed Obaid M. Alzahrani, Merfat M. Alsabban, Maya Abu Alqumboz, Kuo‐Wei Huang, M. S. Aida

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Abstract

In this work, copper zinc tin sulfide (CZTS) thin films were deposited using the spray pyrolysis method. The main objective of this study is to investigate the influence of the deposition temperature on the formation of secondary phases. This effect is analyzed by the study of the structural, optical, and electrical behavior of the samples. The samples were deposited under four different temperatures ranging from 300 °^ͦC to 500 °C and were characterized using XRD, Raman, UV–visible spectroscopy, scanning electron microscope, energy-dispersive spectroscopy, and four-point probe. Overall, the CZTS main phase and CuS secondary phase were noticed in all films. However, the formation of these phases showed a high dependence on the deposition temperature. As confirmed by the XRD patterns and Raman spectra, the intensity of the CuS secondary phases decreased with increasing temperature. Additionally, according to the optical and electrical results, the films behaved closer to pure CZTS with increasing temperature.

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生长温度对喷雾热解法制备CZTS薄膜中二次相的影响

采用喷雾热解法制备了硫化铜锌锡（CZTS）薄膜。本研究的主要目的是研究沉积温度对二次相形成的影响。这种效应是通过研究样品的结构、光学和电学行为来分析的。样品在300°°C ~ 500°C 4种不同温度下沉积，并使用XRD、拉曼光谱、紫外可见光谱、扫描电镜、能量色散光谱和四点探针进行表征。总的来说，在所有的膜中都发现了CZTS主相和cu次相。然而，这些相的形成对沉积温度有高度的依赖性。XRD图谱和拉曼光谱证实，cu二次相强度随温度升高而降低。此外，根据光学和电学结果，随着温度的升高，膜的性能更接近纯CZTS。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.