{"title":"Boosting the structure, thermal, and physical characteristics of polyvinyl alcohol-polyacrylic acid blend with BaO/V2O5: Nanocomposites for optoelectronics and energy-related devices","authors":"Awatif Alshamari","doi":"10.1007/s10854-026-18838-w","DOIUrl":"10.1007/s10854-026-18838-w","url":null,"abstract":"<div><p>This study examines the reinforcing effects of V<sub>2</sub>O<sub>5</sub> and BaO nanoparticles (NPs) on the structural, optical, thermal, and dielectric properties of poly(vinyl alcohol-acrylic acid) (P(VA-AA)). The NPs and nanocomposite films were fabricated by facile sol–gel and solution casting techniques. TEM, FE-SEM, XRD, and ATR-FTIR revealed the NP-like morphology, even distribution of fillers on the film’s surface, and the complexation between NPs and matrix functional groups. The films are semi-transparent, and their band gaps (direct/indirect) were reduced from (5.1/4.8 eV) to (4.7/3.1 eV) at a filler content of 10 wt% BaO/V<sub>2</sub>O<sub>5</sub> NPs. The Urbach width increased from 0.133 to 0.96 eV. TGA thermograms indicated that the nanocomposites retain about 98–96% of their original weight until 150 °C. The dielectric measurements were carried out in the frequency and temperature ranges of <i>f</i> = 100 Hz–8.0 MHz and 298–418 K, respectively. The dielectric permittivity increased from 15.6–21.45 to 20–30 at 5.0 wt% BaO/V<sub>2</sub>O<sub>5</sub> before declining at higher filler content. The maximum AC conductivity increased from 5.74 × 10⁻<sup>4</sup> to 9.52 × 10⁻<sup>4</sup> S · m⁻<sup>1</sup>. The impact of filler content on various optical constants, transition temperatures, and conduction mechanisms in the nanocomposite films is discussed. Interestingly, incorporation of 5.0 wt% BaO/V<sub>2</sub>O<sub>5</sub> resulted in a doubling the energy density compared to the pristine matrix. These compositions are particularly suitable for optoelectronic devices and supercapacitors due to their improved optical and dielectric properties, thermal stability, and minimal energy loss.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 33","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149375819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Magnetoelectric coupling, energy storage, and Maxwell–Wagner-driven magnetodielectric response in PVDF–Pb0.75Sm0.25TiO3–Ba0.7Sr0.3Fe12O19 multiferroic composites","authors":"Arshdeep Kaur, Sandip Gajanan Kakade, Indu Sharma, Nayeem Ahmad Pandit, Sajan Masih, Shiffali Middha, Vishal Arora, Harmanjit Singh Dosanjh, Satvir Singh, Nitin Tandon, Chirag Garg, Parambir Singh Malhi, Neeraj Bansal, Anupinder Singh, Jahangeer Ahmed","doi":"10.1007/s10854-026-18862-w","DOIUrl":"10.1007/s10854-026-18862-w","url":null,"abstract":"<div><p>Flexible multiferroic polymer composites with magnetoelectric coupling, energy storage, and triboelectric capabilities are promising for multifunctional electronic applications. In this study, flexible PVDF–(1-<i>x</i>)Pb<sub>0.75</sub>Sm<sub>0.25</sub>TiO<sub>3</sub>–<i>x</i>Ba<sub>0.7</sub>Sr<sub>0.3</sub>Fe<sub>12</sub>O<sub>19</sub> composites, where <i>x</i> = 0.10, 0.20, 0.30, 0.40, and 0.50, were prepared by varying the relative fractions of PSTO and BSFO while maintaining a constant total ceramic loading in the PVDF matrix. The structural, morphological, dielectric, ferroelectric, magnetic, magnetodielectric, magnetoelectric, energy storage, and triboelectric properties were studied as a function of the composition of the ceramics. The coexistence of electroactive β-phase PVDF, tetragonal PSTO and hexagonal BSFO phases without any identifiable secondary phases was confirmed by X-ray diffraction and FTIR analyses. The composition with <i>x</i> = 0.10 displayed the maximum polarization of 1.198 µC/cm<sup>2</sup> at 600 kV/cm, while the composition with <i>x</i> = 0.50 showed the highest saturation magnetization of 1.57 emu/g due to the increased BSFO fraction. The low-frequency magnetodielectric response was consistent with a contribution from Maxwell–Wagner interfacial polarization. The <i>x</i> = 0.50 composite exhibited a %MDC of 27.45% at 1.2 T and 100 Hz. The energy-storage characteristics were analyzed using the P–E loops, and the <i>x</i> = 0.10 composition exhibited the maximum recovered energy density of 637.92 mJ/cm<sup>3</sup> and an energy-storage efficiency of 78.54% at 600 kV/cm. The composite with <i>x</i> = 0.10 also exhibited the maximum value of the magnetoelectric coupling coefficient of 15.09 mV cm<sup>−1</sup> Oe<sup>−1</sup> at the bias magnetic field of 100 Oe. This response may be associated with strain-mediated coupling between the magnetostrictive BSFO and piezoelectric constituents. Furthermore, the <i>x</i> = 0.10 composition exhibited the greatest peak-to-peak triboelectric output voltage of 7.50 V under repetitive contact separation cycles.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 33","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149375826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Dayanidhi, N. Archana, V. J. Abarna, S. Parthiban, T. C. Sabari Girisun
{"title":"Halide-driven modulation of nonlinear absorption in organic–inorganic hexahalostannate hybrid crystals","authors":"K. Dayanidhi, N. Archana, V. J. Abarna, S. Parthiban, T. C. Sabari Girisun","doi":"10.1007/s10854-026-18884-4","DOIUrl":"10.1007/s10854-026-18884-4","url":null,"abstract":"<div><p>Organic–inorganic hybrid crystals, bis(2-amino-6-methylpyridinium)hexachlorostannate(IV) (AMPSC) and bis(2-amino-6-methylpyridinium)hexabromostannate(IV) (AMPSB), were synthesised to investigate the influence of chloride-to-bromide substitution on their structural features and nonlinear absorption characteristics. Single-crystal X-ray diffraction confirmed monoclinic centrosymmetric structures in the <i>P</i>2<sub>1</sub>/<i>n</i> and <i>P</i>2<sub>1</sub>/<i>c</i> space groups for AMPSC and AMPSB, respectively, with octahedral [SnCl<sub>6</sub>]<sup>2−</sup> and [SnBr<sub>6</sub>]<sup>2−</sup> anions. Despite their centrosymmetric crystal structures, the nonlinear absorption behaviour of these hybrid crystals can be influenced by differences in their local coordination environments and intermolecular interactions. The chloride-to-bromide substitution provides a comparative approach to understanding how the Sn-X coordination environment and associated electronic characteristics relate to nonlinear absorption in closely related Sn(IV) hybrid halides. Hirshfeld surface analysis revealed dominant H ··· Cl and H ··· Br contacts, contributing 66.1% and 64.8% to the corresponding fingerprint distributions, respectively. Density functional theory calculations at the B3LYP/LANL2DZ level showed a reduction in the HOMO–LUMO gap from 3.49 eV for AMPSC to 2.63 eV for AMPSB, accompanied by increases in dipole moment and polarizability. These calculated electronic characteristics were consistent with the optical band gaps obtained from UV–Vis diffuse reflectance measurements, which decreased from 3.52 to 2.81 eV. Open-aperture Z-scan measurements at 532 nm revealed distinct nonlinear absorption regimes: AMPSC exhibited reverse saturable absorption with a positive nonlinear absorption coefficient and an optical-limiting threshold of 6.16 × 10<sup>12</sup> W/m<sup>2</sup>, whereas AMPSB displayed saturable absorption with a negative nonlinear absorption coefficient of − 0.15 × 10<sup>−10</sup> m/W. These results demonstrate a change in nonlinear absorption from reverse saturable absorption to saturable absorption upon chloride-to-bromide substitution within closely related Sn(IV) hybrid frameworks. FT–IR, photoluminescence, TG–DSC and SEM–EDS analyses further supported their vibrational, optical, thermal and compositional characteristics. Overall, the findings establish a comparative relationship between halide-dependent structural and electronic characteristics and nonlinear absorption behaviour in these Sn(IV) hybrid halides.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 33","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149375818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structural, spectroscopic, and nonlinear optical studies of 2-aminopyrimidine: 2,4-dihydroxybonzoic acid cocrystal","authors":"Parameswaran K, Saravanabhavan Munusamy, Sanjeeva Reddy Gorla, Rajkumar Madhu","doi":"10.1007/s10854-026-18775-8","DOIUrl":"10.1007/s10854-026-18775-8","url":null,"abstract":"<div><p>The organic cocrystal, 2-aminopyrimidine:2,4-dihydroxybenzoic acid (APDHB) was synthesized using a solvent-assisted grinding method, followed by the growth of high-quality single crystals from methanol through slow solvent evaporation process. Cocrystal formation was initially analyzed through UV–Visible and FT-IR spectroscopic techniques. Crystal structure determination was conducted using single-crystal XRD, and the results revealed that APDHB crystallized into orthorhombic system with noncentrosymmetric space group P2<sub>1</sub>2<sub>1</sub>2<sub>1</sub>. The molecular framework is organized by the strong network of O<sup>−</sup>H<sup><b>…</b></sup>N and N<sup>−</sup>H<sup><b>…</b></sup>O hydrogen bonds. These interactions facilitate a supramolecular assembly characterized by <span>({R}_{2}^{2}(8))</span> motifs. Furthermore, intermolecular interactions quantified by Hirshfeld surface analysis and the specific contributions of O<sup>−</sup>H<sup><b>…</b></sup>N, C<sup>−</sup>H<sup><b>…</b></sup>O, and O<sup>−</sup>H<sup><b>…</b></sup>O interactions stabilized the crystal structure. Computational calculations were performed by DFT method using the B3LYP/6–311 + G (d,p) basis set in Gaussian 09. These simulations provided insights into optimized molecular geometry, molecular electrostatic potentials (MEP), frontier molecular orbital (FMO) energies, and Mulliken charge distribution. Thermal analysis (TGA/DTA) demonstrated that the APDHB cocrystal maintains stability up to 179.2 °C, making it suitable for various optoelectronic applications. The second-harmonic generation (SHG) efficiency was evaluated using the Kurtz and Perry powder technique. The results indicate that APDHB possesses an SHG efficiency 3.45 times better efficiency than that of KDP. Additionally, laser damage threshold studies recorded a value of 1.95 GW/cm<sup>2</sup>, exhibiting the robustness for high-power laser applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 33","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149375824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Raz Muhammad, Asif Ali, Javier Camargo, Miriam S. Castro, Dawei Wang, Mohammad Rafe Hatshan, Mohammed Rafi Shaik
{"title":"Structural and functional properties of Ba1-xCaxTi1-xNbxO3 ceramics","authors":"Raz Muhammad, Asif Ali, Javier Camargo, Miriam S. Castro, Dawei Wang, Mohammad Rafe Hatshan, Mohammed Rafi Shaik","doi":"10.1007/s10854-026-18882-6","DOIUrl":"10.1007/s10854-026-18882-6","url":null,"abstract":"<div><p>Ba<sub>1-<i>x</i></sub>Ca<sub><i>x</i></sub>Ti<sub>1-<i>x</i></sub>Nb<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0.005, 0.01, 0.03, and 0.05) ceramics were prepared by solid-state reaction to examine the influence of Ca and Nb substitution on the structural, microstructural, dielectric, and ferroelectric properties of BaTiO<sub>3</sub>. X-ray diffraction confirmed a perovskite structure and showed a gradual reduction in average tetragonal distortion with increasing substitution. Raman spectroscopy showed the persistence of characteristic BaTiO<sub>3</sub>-related vibrational features, suggesting that distorted octahedral environments remain detectable despite changes in the average structure. Microstructural analysis revealed substantial grain refinement, with the reported mean grain size decreasing from approximately 5.2 to 1.33 μm, although the highest-substitution composition exhibited a less uniform grain morphology. Dielectric measurements showed strong low-frequency dispersion and loss for <i>x</i> = 0.005, pointing to a marked extrinsic contribution. Room-temperature polarization–electric field (P-E) measurements showed progressively slimmer hysteresis loops over the measured compositions. Diffuse-reflectance analysis yielded apparent optical band gaps between 2.61 and 2.72 eV, with a small non-monotonic compositional variation. The results establish correlated changes in average structural distortion, microstructure, and electrical response with Ca/Nb substitution.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 33","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149375825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of thiourea/metal ratio on the properties of MOE-based Cu2ZnSn(S,Se)4 thin films and solar cells","authors":"Yingxuan Cui, Yajie Shen, Yang Liu, Yanxin Huo, Cong Song, Wei Yu, Chao Gao","doi":"10.1007/s10854-026-18721-8","DOIUrl":"10.1007/s10854-026-18721-8","url":null,"abstract":"<div><p>The morphology of precursor thin films exerts a significant influence on the fabrication of CZTSSe thin films. In this work, CZTSSe thin films were fabricated using 2-methoxyethanol (MOE) as the solvent. The morphology of the precursor films was regulated by varying the thiourea-to-metal (Tu/M) ratio in the precursor solution, and the crystallization evolution of the precursor films with distinct morphologies as well as the resulting performance of the CZTSSe solar cells was systematically investigated. Experimental results reveal that an optimized Tu/M ratio in the precursor solution effectively tailors the film porosity, which accelerates the inward transport of Se into the film interior during selenization, thereby significantly improving the vertical crystallization uniformity of the absorber. In addition, the tailored film porosity promotes the earlier formation of ZnSe-related intermediates, while improved Se transport and altered phase-evolution pathways jointly enhance the early-stage crystallization of the films. The enhanced crystallization of the CZTSSe films is accompanied by a shallower dominant electrically active response, a lower extracted defect density, suppressed interface-related recombination, and a reduced back-contact barrier height. Consequently, the power conversion efficiency (PCE) of the solar cell is substantially boosted from 8.1 to 12.1% (without cation doping and anti-reflection coating).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 33","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149375827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structural, microstructural and temperature-dependent dielectric investigations of A-site Sn-substituted Ba1-xSnxTiO3 ceramics for high-temperature capacitor applications","authors":"Priyanka Kumari, Pankaj Kumar Modi","doi":"10.1007/s10854-026-18810-8","DOIUrl":"10.1007/s10854-026-18810-8","url":null,"abstract":"<div><p>Ba<sub>1-x</sub>Sn<sub>x</sub>TiO<sub>3</sub> (<i>x</i> = 0.01, 0.025, 0.05, 0.075) piezoelectric ceramics were synthesized by the conventional solid-state reaction method to study how A-site Sn substitution affects phase transitions, microstructure, dielectric behavior, and electrical transport in BaTiO<sub>3</sub>. X-ray diffraction confirmed a single-phase perovskite structure with no detectable secondary phases, indicating successful incorporation of Sn into the Ba site. FESEM micrographs showed dense polycrystalline microstructures with well-defined grains, and grain homogeneity improved at intermediate Sn concentrations. Temperature- and frequency-dependent measurements of dielectric constant, impedance, and dielectric loss (RT: 400 °C) showed a broad ferroelectric-to-paraelectric transition with pronounced frequency dispersion. Increasing Sn-content converted the sharp dielectric anomaly typical of BaTiO<sub>3</sub> into a diffuse transition and improved dielectric stability over a wide temperature range. Dielectric loss stayed low at higher frequencies but rose at elevated temperatures, consistent with thermally activated charge carriers and interfacial polarization. Impedance analysis presented a negative temperature coefficient of resistance (NTCR) behavior, confirming thermally activated conduction and a drop in grain-boundary resistance with increasing temperature. These results show that A-site Sn substitution changes the phase-transition behavior and dielectric response of BaTiO<sub>3</sub> in ways relevant to high-temperature capacitor and energy-storage applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qi Zeng, Binkai Hu, Shihua Yang, Shengyu Wu, Xinlei Wang, Bin Li, An-Quan Xie, Chunjin Hang
{"title":"Synergistic thermal conduction and electromagnetic shielding in nickel foam-based composite via boron nitride and high-entropy oxide@Ag","authors":"Qi Zeng, Binkai Hu, Shihua Yang, Shengyu Wu, Xinlei Wang, Bin Li, An-Quan Xie, Chunjin Hang","doi":"10.1007/s10854-026-18860-y","DOIUrl":"10.1007/s10854-026-18860-y","url":null,"abstract":"<div><p>A multifunctional composite was strategically designed to simultaneously address thermal management and electromagnetic interference (EMI) shielding challenges in next-generation high-performance electronics. The composite was fabricated by filling a three-dimensional nickel foam with a waterborne polyurethane (WPU) matrix containing BN nanosheets and core–shell (FeCoNiMgMn)<sub>3</sub>O<sub>4</sub>@Ag fillers. Microstructural characterization confirmed uniform dispersion of BN nanosheets and successful Ag immobilization onto the high-entropy oxide surface. The optimized Ni/WPU-BN composite achieved a thermal conductivity of 0.91 W/m · K, nearly threefold enhancement over pristine WPU. It was found that the high-entropy oxide could improve impedance matching, facilitating greater electromagnetic wave penetration into the material for dissipative absorption. Concurrently, the Ni/WPU-BN-(FeCoNiMgMn)<sub>3</sub>O<sub>4</sub>@Ag composite exhibited an excellent EMI shielding effectiveness of 67.2 dB with absorption as the dominant mechanism. And finite element simulations further validated the experimental shielding trends. This work presents a promising dual-network strategy for advanced electronic packaging materials with integrated thermal and electromagnetic functionalities.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chen Li, Zheng-Nan Li, Chen-Feng Li, Fang Tang, Zhao-Cai Wang, Yong Fang, Mao Ye, Ren-Kui Zheng
{"title":"Electronic transport and magnetic properties of boron-rich EuB6+δ thin films prepared by magnetron sputtering","authors":"Chen Li, Zheng-Nan Li, Chen-Feng Li, Fang Tang, Zhao-Cai Wang, Yong Fang, Mao Ye, Ren-Kui Zheng","doi":"10.1007/s10854-026-18781-w","DOIUrl":"10.1007/s10854-026-18781-w","url":null,"abstract":"<div><p>Boron-rich EuB<sub>6+<i>δ</i></sub> thin films were grown on Al<sub>2</sub>O<sub>3</sub> (0001) single-crystal substrates via magnetron sputtering. X-ray diffraction and energy-dispersive X-ray spectroscopy analyses confirmed that the EuB<sub>6+<i>δ</i></sub> films comprise amorphous boron and polycrystalline EuB<sub>6</sub> with preferred orientation along the [100] crystallographic direction. The presence of excessive amorphous boron significantly modifies the magnetotransport and magnetic properties. Notably, temperature-dependent resistance measurements demonstrated semiconductor-like electronic transport characteristics, with a pronounced resistance increase during cooling from 25 to 1.8 K. Furthermore, the films exhibited negative magnetoresistance whose magnitude progressively enhanced with decreasing temperature in the same temperature range (25–1.8 K). These transport phenomena present a striking contrast to those observed in bulk EuB<sub>6</sub> single crystals and are primarily attributed to the presence of semiconducting amorphous boron that spatially separates ferromagnetic conducting EuB<sub>6</sub> grains and thus contribute to additional resistance and tunneling magnetoresistance effect at grain boundaries. Magnetic characterization revealed unsaturated ferromagnetic hysteresis loops at low temperatures (≤ 10 K), which are attributed to the superposition of paramagnetic contributions from amorphous boron and intrinsic ferromagnetic ordering within the polycrystalline EuB<sub>6</sub> phase.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lichun Shi, Hongjun Ye, Liju Chen, Chunfeng Dong, Junshan Hu
{"title":"Red-enhanced upconversion luminescence of ZnWO4:Yb3+/Er3+ phosphor for optical temperature sensing","authors":"Lichun Shi, Hongjun Ye, Liju Chen, Chunfeng Dong, Junshan Hu","doi":"10.1007/s10854-026-18788-3","DOIUrl":"10.1007/s10854-026-18788-3","url":null,"abstract":"<div><p>A Yb<sup>3+</sup>/Er<sup>3+</sup> co-doped ZnWO<sub>4</sub> phosphor was successfully synthesized via the high-temperature solid-state method. Upon 980 nm near-infrared excitation, the sample exhibits intense upconversion luminescence (UCL), including green emission bands centered at 523 nm and 545 nm as well as a strong red emission at 658 nm. The optimal doping concentrations of Yb<sup>3+</sup> and Er<sup>3+</sup> are confirmed to be 0.07 and 0.03, which yield the maximum luminescence intensity. Spectroscopic characterizations including UCL, excitation, and emission spectra demonstrate that the dominant upconversion energy transfer pathway follows: Yb<sup>3+</sup> (<sup>2</sup>F<sub>5/2</sub>) + Er<sup>3+</sup> (<sup>4</sup>I<sub>13/2</sub>) → Yb<sup>3+</sup> (<sup>2</sup>F<sub>7/2</sub>) + Er<sup>3+</sup> (<sup>4</sup>F<sub>9/2</sub>). Moreover, the ZnWO<sub>4</sub>: 0.07Yb<sup>3+</sup>/0.03Er<sup>3+</sup> phosphor exhibits reliable optical thermometric performance over a wide temperature range of 298–598 K. The ZnWO<sub>4</sub>: 0.07Yb<sup>3+</sup>/0.03Er<sup>3+</sup> phosphor yields maximum relative sensitivities of 2.74% K<sup>−1</sup> and 0.81% K<sup>−1</sup> at 298 K for thermally coupled (I<sub>523</sub>/I<sub>545</sub>) and non-thermally coupled (I<sub>545</sub>/I<sub>658</sub>) level pairs, respectively.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 32","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149338566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}