Journal of Materials Science: Materials in Electronics最新文献

{"title":"Enhanced high-temperature thermoelectric performance of the n-type WO2.72 Ceramics: reduced lattice thermal conductivity via microstructure engineering","authors":"Tram Anh Huynh Ngoc,&nbsp;Thanh Ngoc Bao Phan,&nbsp;Quy Nguyen Ngoc Le,&nbsp;Nhat Quang Minh Tran","doi":"10.1007/s10854-025-15762-3","DOIUrl":"10.1007/s10854-025-15762-3","url":null,"abstract":"<div><p>This study presents a strategy to improve thermoelectric properties of substoichiometric pentagonal−columnar WO_2.72 oxides through microstructure engineering via the incorporation of Ta₂O₅ inclusions as a secondary phase. A series of xTa₂O₅WO_2.72 oxides (x = 0–0.15) were synthesized via solid−state reaction in inert atmosphere. XRD and SEM analyses confirm the coexistence of Ta₂O₅ segregations within the WO_2.72 crystal lattice structure without chemical reaction and reveal a nanorod−like grain morphology in the material. These structural modifications introduce significant phonon−scattering sites, reducing total thermal conductivity by half. Simultaneously, the Seebeck coefficient magnitude increases by 43% compared to the pristine phase, sufficient to compensate for the elevation in the resistivity caused by the introduction of the secondary−phase inclusions, thereby maintaining competitive power factors above 1000 K. A peak <b><i>zT</i></b> of 0.13 at 1073 K is achieved for x = 0.15, nearly tripling the figure of pristine materials. The results highlight the effectiveness of microstructure−driven strategies for decoupling thermal and electronic transport in oxide thermoelectric.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Bi3+ amounts on the structural, emission, and photometric properties of Eu3+-doped NPZC glasses for reddish-orange light applications","authors":"Houssine Bourguiba,&nbsp;Ramachari Doddoji,&nbsp;Marwa Ennouri,&nbsp;Ifa Jlassi,&nbsp;Bernard Gelloz","doi":"10.1007/s10854-025-15880-y","DOIUrl":"10.1007/s10854-025-15880-y","url":null,"abstract":"<div><p>Sodium-phosphate (NPZC) glasses by co-doping of Eu³⁺ with different Bi³⁺ amounts were fabricated via the melt-quenching method. Physical properties like refractive indices, molar volumes, and densities of current co-doped glasses were obtained. No sharp crystalline peaks via XRD (X-ray diffraction) were observed, indicating the amorphous features of the prepared glasses. The FTIR (Fourier transform infrared) spectra of glasses were recorded in the infrared (400–4000 cm⁻¹) and visible (200–600 nm) regions. The cut-off edges (293- 312 nm) and band gap energies (4.23–3.97 eV) of glasses were estimated from the FTIR. Upon 327 nm excitation, co-doped glasses exhibit bluish-green (350–550 nm) of Bi³⁺(³P₁ → ¹S₀) and red 612 nm of Eu³⁺ (⁵D₀ → ⁷F₂). JO (Ω₂ /Ω₄) parameters and R/O ratios of current glasses are studied. The double-exponential formula is accorded to the decay curves of current glasses, and the decrease in lifetime (472˗378 ns) indicates the Bi³⁺ to Eu³⁺ energy transfer (ET). The maximum ET efficiency of co-doped glasses was found to be 45%. The dipole–dipole interaction causes for PL decay, which is proved by Dexter and Reisfeld’s ET formula. The higher emission cross-section (19.15 × 10^–22 cm²) and optical gain (7.45 × 10^–28 cm²s) values of glasses were obtained. Moreover, the reddish-orange emission of co-doped glasses demonstrates a CCT value below 2500 K and a CP value above 75%.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning the Microstructure and Thermoelectric Response of β-FeSi2 Thin Films via Cobalt Doping","authors":"Shoug M. Alghamdi,&nbsp;Ayesha Hanif,&nbsp;Rasmiah S. Almufarij,&nbsp;Elsammani Ali Shokralla,&nbsp;M. D. Alshahrani,&nbsp;Islam Ragab,&nbsp;Mohamed Abdelsabour Fahmy,&nbsp;Abdulaziz M. Alanazi,&nbsp;Adnan Ali,&nbsp;Arslan Ashfaq","doi":"10.1007/s10854-025-15897-3","DOIUrl":"10.1007/s10854-025-15897-3","url":null,"abstract":"<div><p>In this study, Co-doped β-FeSi₂ thin films were successfully synthesized using a simple thermal evaporation technique followed by post-annealing at 500 °C to explore their thermoelectric properties. The structural analysis confirmed the orthorhombic β-FeSi₂ phase with prominent diffraction peaks corresponding to the (220), (200), and (311) planes. The peak intensity increased with Co content up to x = 0.25, followed by a decline at x = 0.35, indicating improved crystallinity at moderate doping and structural disorder at higher concentrations. SEM images revealed a systematic microstructural evolution from nanoneedle-like morphology to granular agglomerates, consistent with XRD findings. Thermoelectric measurements showed that the Seebeck coefficient decreased with increasing the cobalt content due to higher carrier concentration, while electrical conductivity improved up to x = 0.25, owing to enhanced mobility and grain connectivity. The highest power factor of 11.39 µW/mK² at 550 K was achieved for the x = 0.25 sample, confirming the optimal doping level. This work highlights the significance of controlled cobalt doping in enhancing the thermoelectric performance of β-FeSi₂ thin films and provides insight into the interplay between microstructure and carrier transport.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gamma irradiation-induced trap behavior in AlGaN-based UV-C LEDs causing accelerated failure under electrical stress","authors":"Mengwei Su,&nbsp;Hongxia Liu,&nbsp;Hao Zhang,&nbsp;Chang Liu","doi":"10.1007/s10854-025-15853-1","DOIUrl":"10.1007/s10854-025-15853-1","url":null,"abstract":"<div><p>The effects of traps on the degradation of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) under gamma (<i>γ</i>) irradiation and/or constant current stress are investigated in this work. Radiation significantly accelerates the degradation rates of devices under electrical stress. Although <i>γ</i> irradiation can penetrate the entire chip, irradiation stress primarily affects the region near the interface between the <i>p</i>-type layer and the multi-quantum well, regardless of whether electrical stress is added at the same time. Compared with electrical stress, the number of defects with an activation energy of approximately 0.1 eV substantially increases under irradiation-electrical stress according to admittance spectroscopy. These defects are speculated to constitute a complex of Mg-related substitutive impurities and Ga vacancies within the electronic barrier layer, and they are considered to constitute the primary mechanism responsible for the accelerated failure of devices under irradiation-electrical stress. In this study, an in-depth analysis of the difference in defect behavior caused by irradiation and electrical stresses in UV-C LEDs is provided, and possible optimization directions for the fabrication of real high-radiation-hardness AlGaN-based devices under radiation and electrical stress are suggested.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancements in copper and silver sintering as interconnect materials in electronics applications: review","authors":"Mohammad Shan,&nbsp;Khairi Faiz Muhammad,&nbsp;Mohd Ridha Muhammad,&nbsp;Yew Hoong Wong,&nbsp;Makoto Yoshida","doi":"10.1007/s10854-025-15835-3","DOIUrl":"10.1007/s10854-025-15835-3","url":null,"abstract":"<div><p>As technology advances toward electric vehicles (EVs), copper and silver are receiving growing attention due to their exceptional mechanical, electrical, and thermal properties. These materials withstand high temperatures and offer cost advantages over traditional solders. This review uniquely consolidates recent findings (2010–2024) on sintered Cu and Ag joints, emphasizing not only conventional sintering parameters such as particle shape, size, pressure, time, temperature, and environment, but also emerging aspects that have been overlooked in prior reviews. It offers an in-depth analysis of oxidation effects and prevention strategies, highlights how porosity and density impact mechanical reliability, and examines thermal characteristics such as conductivity, resistivity, and expansion. Unlike earlier surveys, this study critically assesses long-term reliability under thermal cycling, shock, and aging, and investigates mechanical reinforcement using carbon allotropes and metallic dopants. A distinguishing feature is the comparative evaluation of in-house versus commercial sinter pastes, focusing on their composition, organic additives, and fabrication routes. Overall, this work identifies evolving trends and future directions for high-performance interconnects in EVs and power electronics.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation on the third-order nonlinear optical properties of a novel 2-methylimidazolium tetrachlorocadmate (2MITCC) single crystal for optical limiting applications","authors":"S. Surya,&nbsp;B. Gunasekaran,&nbsp;T. C. Sabari Girisun","doi":"10.1007/s10854-025-15898-2","DOIUrl":"10.1007/s10854-025-15898-2","url":null,"abstract":"<div><p>Nonlinear optical (NLO) single-crystalline materials are of significant interest due to their potential to meet the increasing demands for diverse practical applications, such as optical communication, optoelectronics, laser technology, optical modulation, data storage, electro-optical switching, and optical limiting. For the development of nonlinear optical (NLO) materials, compositions of 2-methylimidzole (2MI), cadmium chloride (CdCl₂) and hydrochloric acid (HCl) were used to synthesis with a dimension of 13 × 2 × 2 mm³ metal inorganic material of 2-methylimidazolium tetrachlorocadmate (2MITCC) and the crystals were grown using Slow Evaporation Solution Technology. The 2MITCC crystal belongs to monoclinic P2₁/c space group and the unit cell values (a = 9.0274(9) Å, b = 14.8945(14) Å, c = 7.4458(7) Å, β = 94.119(3)° and Z = 4). The structure of the 2MITCC crystal was depicted by the WinXMorph program. Powder XRD analysis was employed to examine the purity and crystalline structure of the crystalline planes. EDS analysis confirms the molecules of C, N, Cd and Cl in the 2MITCC crystal. The 2MITCC single crystal was recorded. UV-DRS transmittance analysis revealed exceptional transparency (&gt; 98%), along with a cut-off edge at 248 nm and an E_g value of 5 eV. The FTIR analyses were used to identify the vibrational groups. SEM studies reveal the surface morphology of the 2MITCC crystal. TG–DTA studies examined the thermal stability of the 2MITCC. The temperature-dependent dielectric constant and dielectric loss were measured over a frequency range of 1 Hz to 1 MHz. Third-order NLO property of 2MITCC was investigated by the Z-scan method using a Q-Switched Nd: YAG laser with 532 nm and it was revealed that the crystal has a reverse saturable absorption (RSA) effect. All these results demonstrate that the metal–organic crystal 2MITCC is promising for NLO applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High stability rGO@MnO2 heterostructure cathodes for shape memory fibrous zinc-ion batteries","authors":"Chaodong Yang,&nbsp;Lijuan Xiao,&nbsp;Qilong Chen,&nbsp;Feng Qin,&nbsp;Zhengchu Zhang,&nbsp;Lan Luo,&nbsp;Chao Yang","doi":"10.1007/s10854-025-15894-6","DOIUrl":"10.1007/s10854-025-15894-6","url":null,"abstract":"<div><p>Aqueous zinc-ion batteries (AZIBs) face critical challenges such as rapid cathode capacity fading and structural instability, which hinder their long-term applications. In this study, we address these issues by constructing a reduced graphene oxide (rGO)-coated MnO₂ heterostructure cathode integrated with NiTi shape memory alloy to realize a shape memory fibrous zinc-ion battery (SFZIB). Manganese oxide (MnO₂) is widely used in AZIBs because of its crystal structure, which is conducive to ion diffusion and storage. However, rapid capacity fading and materials dissolution limit its development as a positive electrode for AZIBs. Herein, (rGO layers are coated on MnO₂ to improve the performance as the cathode for AZIBs. Meanwhile, using NiTi memory alloy wire as the flexible substrate, the SFZIB with shape memory function is prepared. Coating rGO layers effectively inhibit the dissolution of MnO₂, while providing more ion adsorption sites and charge transfer channels, thereby enhancing ion transfer kinetics. After 1000 cycles charge and discharge, Zn//rGO@MnO₂-20 has a capacity retention rate of 83.8%. It is worth noting that when assembled into a quasi-solid-state SFZIB, it showed good flexibility and unique shape memory properties, with a 90.6% capacity retention rate after 200 bending shape recovery. We also demonstrate the application of SFZIB in road traffic. For instance, it can be used in combination with solar panels on highway sections. When there is sufficient ultraviolet light during the daytime, the solar panels power the warning lights, while at night, the warning lights are powered by SFZIB.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"W/Mg co-doped VO2 thin films with improved transition temperature, optical, and structural properties","authors":"H. F. Haji,&nbsp;M. E. Samiji,&nbsp;N. R. Mlyuka","doi":"10.1007/s10854-025-15832-6","DOIUrl":"10.1007/s10854-025-15832-6","url":null,"abstract":"<div><p>W/Mg co-doped VO₂ thin films were prepared by co-sputtering of magnesium, tungsten, and vanadium (V(99%)W(1%) alloy targets at a substrate temperature of 425 °C. The films were characterized by X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, the two-point probe, and UV/VIS/NIR Spectrometer. W/Mg co-doped VO₂ films with concentrations of~0.95 at.% and~3.1 at.% for W and Mg, respectively, showed relatively lower crystallite sizes and reduced hysteresis loop widths of 3.9 nm and~2 °C compared to 11.4 nm and 17.8 °C, respectively, for pristine VO₂. The integrated luminous transmittance of the co-doped samples was~47%, compared to 26% and 41% for the W-doped and pristine VO₂ films, respectively. A significant reduction in transition temperature to below 33 °C was realized for the co-doped films, compared to 64.8 °C and 44 °C for the undoped and W-doped VO₂-based thin films, respectively. This work shows that a controlled amount of Mg in the W-doped VO₂ films could potentially make VO₂ thin films useful for smart window applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of structure, morphology, dielectric, electrical, and electrochemical properties of Sr-doped BCZT perovskites","authors":"Ritesh Verma,&nbsp;Garima Rana,&nbsp;Syed Kashif Ali,&nbsp;Ahmed Hussain Jawhari,&nbsp;Ankush Chauhan","doi":"10.1007/s10854-025-15885-7","DOIUrl":"10.1007/s10854-025-15885-7","url":null,"abstract":"<div><p>In this study, we synthesised (Barium Calcium Zirconate Titanate) BCZT and Sr-doped BCZT (Strontium doped Barium Calcium Zirconate Titanate) perovskites using the hydrothermal technique. The samples sintered at 600, 700, and 800 °C to analyse the effect of temperature on their structure, dielectric, electric, and electrochemical properties. The crystallite size obtained thorough XRD analysis is 23 ± 0.5 nm and FESEM micrographs revealed the formation of spherical grains which further corroborated by TEM micrographs. The dielectric loss ranges between 0.05 and 0.42 for all the samples which indicates the satisfactory contact formation. Nyquist plots show that a clear semi-circular arc is not formed in any of the samples, which is because of their highly resistive nature. DC resistivity results showed that with an increase in sintering temperature, the PTCR behaviour is observed to improve which suggests an increase in insulating or dielectric properties of the materials. For undoped BCZT, at around 50 °C the resistivity decreased with an increase in sintering temperature. The AC conductivity findings indicate the existence of space charge polarisation at low frequencies and mobile ionic species at high frequencies. The DC resistivity findings indicated that B1 and Bs1 exhibited the maximum conductivity at room temperature, whereas resistivity rose with increasing temperature, indicating PTCR behaviour for all samples. The CV analysis indicated that the greatest values of Cs, E, Qs, and q are recorded for Bs1, measuring 0.541 F/g, 0.59 Wh/kg, 0.000759 mAh/g, and 1.517 C, respectively, at a scan rate of 0.09 mV/s, while the second highest values are noted for Bs1, followed by B1. The results suggested that by regulating the processing temperature, the cation and anion vacancies may be effectively managed, leading to the targeted application of pristine and Sr-doped BCZT. This also indicates the versatile characteristics of BCZT-related materials, including applications from temperature sensors to electrochemical sensors. Thus, by utilising the obtained results, a multifunctional perovskite material could be developed using low-temperature synthesis method.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of structural and dielectric characteristics of La-doped BZT ceramics","authors":"Ajay Kumawat,&nbsp;Sanjay Dhanka,&nbsp;Ankur Kumar,&nbsp;Abhinav Sharma,&nbsp;Shubhpreet Kaur,&nbsp;Nitin Kumar,&nbsp;Abhjit Bhowmik,&nbsp;Ajay Kumar,&nbsp;Ruby Pant,&nbsp;Harvinder Singh","doi":"10.1007/s10854-025-15841-5","DOIUrl":"10.1007/s10854-025-15841-5","url":null,"abstract":"<div><p>Barium zirconium titanate (BZT) has garnered considerable interest due to its tunable dielectric and ferroelectric properties, making it suitable for memory devices and multilayer capacitors. This study investigates the impact of lanthanum (La) doping (2%, 4%, and 5%) on the structural, dielectric, and electrical properties of BZT ceramics synthesized via the sol–gel method. X-ray diffraction (XRD) confirmed a single-phase tetragonal perovskite structure (P4mm), with lattice contraction (c/a ratio decreasing from 1.0095 to 1.0092) due to La³⁺ substitution at the Ba²⁺ site. A secondary phase (La₂Ti₂O₇) emerged at higher doping levels, reducing tetragonality and grain size (from 497 nm for pure BZT to 238 nm for 5% La-doped BZT), as evidenced by FESEM. Dielectric studies revealed frequency dispersion, with ε′ decreasing from 74,600 (BZT) to 55,067 (5% La-doped BZT) at 100 Hz due to suppressed interfacial polarization. The permittivity stabilized to ~ 1,200–1,500 at 1 MHz across all compositions, reflecting dominant electronic polarization at higher frequencies. La doping reduced dielectric losses (tanδ) by 20–30% above 10 kHz, indicating improved high-frequency stability and a shift in Curie temperature (T_e) from 110 °C (BZT) to 120–121 °C (La-doped samples), attributed to altered ionic mobility. Impedance spectroscopy indicated a correlated barrier hopping (CBH) conduction mechanism, with activation energy decreasing from 0.052 eV (BZT) to 0.011–0.019 eV (La-doped samples), suggesting facilitated charge transport. Nyquist plots confirmed non-Debye relaxation, emphasizing the role of grain boundaries in conduction. This work demonstrates that La doping effectively tailors BZT’s functional properties, offering a pathway to optimize performance for high-frequency capacitive and energy storage applications. The findings provide new insights into defect-mediated property modulation in doped perovskites, distinguishing this study from prior literature through systematic quantification of La’s effects on lattice dynamics and conduction mechanisms.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}