Journal of Materials Science: Materials in Electronics最新文献

Role of Cu in tailoring the structure and soft magnetic performance of Fe-based nanocrystalline alloys during two-step annealing

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14681-7

T. X. Huang, Z. B. Song, Aditya Jain, Y. G. Wang

{"title":"Role of Cu in tailoring the structure and soft magnetic performance of Fe-based nanocrystalline alloys during two-step annealing","authors":"T. X. Huang, Z. B. Song, Aditya Jain, Y. G. Wang","doi":"10.1007/s10854-025-14681-7","DOIUrl":"10.1007/s10854-025-14681-7","url":null,"abstract":"<div>The exceptional performance of Fe-based nanocrystalline alloys is well-recognized, however, the regulation of their microstructure remains a noteworthy concern. This study aims to maintain a fixed Fe content while optimizing the composition of the Fe80.5B9.5+xP8Cu1.5-xNb0.5 alloys (x = 0, 0.4, & 0.8 at%) by substituting Cu with extra B. The microstructural evolution of these alloys with varying Cu content during two-step annealing and its influence on magnetic properties have been systematically investigated using XRD, DSC, and Mössbauer spectroscopy techniques. The Mössbauer spectra results reveal that the microstructural evolution of alloys with varying Cu content is significantly impacted by relaxation. Additionally, a model is proposed to describe the evolution of nanostructures in alloys with varying Cu content during two-step annealing. Notably, the alloy with an optimized Cu addition (1.1 at.%) exhibits a refined nanostructure and enhanced soft magnetic properties (Bs = 1.82 T, Hc = 5.66 A/m) after two-step annealing.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hierarchically porous activated carbon electrodes synthesized from expired tablets for high-performance supercapacitor and photocatalysis application

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14654-w

Elumalai Dhandapani, Kavitha Kandiah, Gowdhaman Arumugam, Ranjith Rajendran, Navaneethan Duraisamy

{"title":"Hierarchically porous activated carbon electrodes synthesized from expired tablets for high-performance supercapacitor and photocatalysis application","authors":"Elumalai Dhandapani, Kavitha Kandiah, Gowdhaman Arumugam, Ranjith Rajendran, Navaneethan Duraisamy","doi":"10.1007/s10854-025-14654-w","DOIUrl":"10.1007/s10854-025-14654-w","url":null,"abstract":"<div>Hierarchically porous activated carbons (HACs) were derived from expired tablets through facile carbonization with the aid of H₃PO₄ activation. The enhanced specific surface area (SSA) and porous architecture of the derived ACs were confirmed using standard characterization techniques. The as-prepared HACs exhibited an improved specific capacitance (CS) of 141.8 F/g at 2 A/g, with a cyclability of 70% after 2,000 repeated charge–discharge cycles. The HACs//HACs symmetric supercapacitor (SC) device demonstrated a CS of 46.8 F/g at 2 A/g. Additionally, the HACs//HACs symmetric device exhibited the highest energy density of 12.7 Wh/kg and a power density of 4656.5 W/kg. The HACs//HACs device also displayed exceptional cyclability, maintaining 80.2% retention after 3,000 charge/discharge cycles at 20 A/g. Furthermore, the photocatalytic activity of both ACs and HACs was assessed under visible light through the photodegradation of Reactive Black 5 (RB5) dye in aqueous solution. The results indicated that the HACs exhibited excellent photocatalytic activity, with approximately 80% degradation after 120 min, compared to the ACs. These findings demonstrate that the HACs electrode is a cost-effective, eco-friendly, and promising candidate for high-performance energy storage applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Supercritical carbon dioxide mediated fortification of nanotungsten carbide into polyindole for enhanced electrochemical energy storage and corrosion protection of mild steel

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14643-z

Ila Joshi, Sameena Mehtab, Arun Bughani, Harish Mudila, M. G. H. Zaidi

{"title":"Supercritical carbon dioxide mediated fortification of nanotungsten carbide into polyindole for enhanced electrochemical energy storage and corrosion protection of mild steel","authors":"Ila Joshi, Sameena Mehtab, Arun Bughani, Harish Mudila, M. G. H. Zaidi","doi":"10.1007/s10854-025-14643-z","DOIUrl":"10.1007/s10854-025-14643-z","url":null,"abstract":"<div>This study presents the synthesis of tungsten carbide (WC) reinforced polyindole (PIN) nanohybrids (NHs) using supercritical carbon dioxide (sCO2) as a reaction medium, targeting advancements in electrochemical energy storage. NHs were developed through ferric chloride-assisted chemical oxidative polymerization of indole, with varying WC weight fractions, conducted at 2200 psi and 80 °C over 7 h. sCO2, known for its enhanced mass transfer and environmentally friendly nature, significantly aids in creating homogenous NHs with improved surface area and porosity, key factors for efficient charge storage. Mild steel current collectors were employed to fabricate 1 cm2 NHs-based working electrodes (WEs), which were then examined for their electrical and electrochemical properties. The NH derived WEs demonstrated an increase in electrical conductivity with applied voltage, with NH-III (WC 25%; w/w) exhibiting the highest direct current conductivity amongst the series. NH-III demonstrates a specific capacitance of 490 F/g, coupled with energy and power densities of 24.5 Wh/kg and 201.4 W/kg, respectively, showcasing potential for high-performance supercapacitor applications. Over 1500 cycles, NH-III retained 95% of its initial capacitance, indicating robust cyclic stability. Additionally, the potentiodynamic polarization technique revealed superior anti-corrosive behaviour for NH-III in 1.0 M KOH, highlighting its durability in alkaline environments for long-term application. The integration of WC within PIN matrices thus marks a promising approach to enhancing the electrochemical and structural stability of supercapacitor materials.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Uric acid sensing with non-enzymatic cadmium sulfide decorated with rGO

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI: 10.1007/s10854-025-14677-3

Ziyu Liu, Guangzhong Xie, Jing Li, Haozhen Li, Yuanjie Su

引用次数: 0

Investigating the sintering temperature and slurry tape formulation to prepare doped BaTi4O9 ceramic substrates with good dielectric properties

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14650-0

Yi Pu, Debin Lin, Daokuan Liang, Yongbao Feng, Peng Xu, Qiulong Li

{"title":"Investigating the sintering temperature and slurry tape formulation to prepare doped BaTi4O9 ceramic substrates with good dielectric properties","authors":"Yi Pu, Debin Lin, Daokuan Liang, Yongbao Feng, Peng Xu, Qiulong Li","doi":"10.1007/s10854-025-14650-0","DOIUrl":"10.1007/s10854-025-14650-0","url":null,"abstract":"<div>In microwave electronic applications, the advancement of resonators, filters, substrates, and waveguide circuits is significantly influenced by the dielectric ceramics. This research focuses on preparing Nb-doped BaTi4O9 (BT-N) dielectric ceramics, with a specific emphasis on the dielectric and mechanical properties of the BT-N tape-cast substrates. Herein, we adopted conventional solid-state sintering techniques to fabricate the BT-N ceramics and optimized the tape casting process. The slip composition was meticulously adjusted to ensure the green tapes with a smooth surface finish and robust mechanical properties, which shows high tensile strength of 0.81 MPa. The investigation results demonstrate that excessive sintering temperatures or soaking times lead to the emergence of the Ba2Ti9O20 secondary phase, thereby adversely impacting the material’s properties. The sintering kinetics of the BT-N substrates result demonstrates that the sintering temperature of 1260 °C for a duration of 2.5 h resulted in the most favorable combination of high density and superior dielectric characteristics. The sample using tape casting lamination process exhibits a high bulk density of 4.52 g/cm3, accompanied by a dielectric constant (εr) of 40.38 and dielectric loss (tanδ) of 8.99 × 10–4. Under the tape casting processing, the dielectric properties of the BT-N ceramic substrates are significantly optimized.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene reinforced Cu superfine wires: 100-m length with enhanced mechanical strength and electrical conductivity

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14612-6

Xinyu Zhu, Jiangli Xue, Tingting Zuo, Yadong Ru, Yuefan Xu, Bin Chen, Zhaoshun Gao, Yongsheng Liu

{"title":"Graphene reinforced Cu superfine wires: 100-m length with enhanced mechanical strength and electrical conductivity","authors":"Xinyu Zhu, Jiangli Xue, Tingting Zuo, Yadong Ru, Yuefan Xu, Bin Chen, Zhaoshun Gao, Yongsheng Liu","doi":"10.1007/s10854-025-14612-6","DOIUrl":"10.1007/s10854-025-14612-6","url":null,"abstract":"<div>100-m-long level of copper/graphene composite superfine wires (Cu/Gr wires) with a precise diameter of 100 µm were successfully prepared for the first time. This achievement was accomplished through a combination of hot-pressed sintering and cold drawing techniques, remarkably executed without the need for any intermediate annealing processes, showcasing a significant advancement in material fabrication. As a result, the Cu/Gr wires demonstrated exceptional mechanical strength, reaching 637 MPa, and simultaneously preserved superior electrical conductivity, achieving 95.7% of the International Annealed Copper Standard (IACS), marking a significant advancement in material performance. The enhanced performance is attributed to the in situ growth of high-quality graphene, which is uniformly dispersed throughout the Cu matrix, as well as the formation of nano-twins and dislocations induced by large deformation processing. The present work is poised to deliver premium electrical wires and cables, designed to meet the stringent demands of electric power systems, aerospace, and the transportation industry.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth process-driven modulation of electrical characteristics in MBE-grown few-layer MoTe2

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14546-z

Kamlesh Bhatt, Santanu Kandar, Ashok Kapoor, Rajendra Singh

{"title":"Growth process-driven modulation of electrical characteristics in MBE-grown few-layer MoTe2","authors":"Kamlesh Bhatt, Santanu Kandar, Ashok Kapoor, Rajendra Singh","doi":"10.1007/s10854-025-14546-z","DOIUrl":"10.1007/s10854-025-14546-z","url":null,"abstract":"<div>2D TMDC materials are potential materials for future energy-efficient electronic and optoelectronic devices due to their clean, dangling-bond-free interface and interesting material properties. Controlling carrier statistics and the electrical properties is a crucial aspect for their wide application in ultrathin semiconductor-based devices; however, such tuning mostly requires extrinsic doping and bias operations. Here, we present our study on controlling the electrical properties of few-layer MoTe2 films grown over a large area on sapphire using molecular beam epitaxy. The MBE growth parameters, such as growth temperature and chalcogen-to-metal flux ratio, have been optimized to control the stoichiometry of few-layer MoTe2 films precisely. These stoichiometric changes, in turn, influence the electrical properties of the grown films. Raman spectroscopy and AFM were utilized to confirm the phase purity and uniformity of these films. The detailed XPS investigations show the effect of chalcogen deficiency (i.e., the presence of Te vacancies) and excess tellurium atoms on the semiconducting nature of the grown films. The significant shift in the fermi level towards the valence band confirms that the film becomes more p-type due to the presence of extra Te atoms in the lattice. Similarly, the presence of Te vacancies is found to shift the fermi level in the other direction. Our work provides a convenient approach for controlling MoTe2's electrical characteristics uniformly without introducing any foreign impurity. This effective control over the electrical nature of the grown films by modulating the growth parameters can be advantageous for utilizing the ambipolar nature (i.e., both n and p type nature) of 2D MoTe2 for applications requiring transitions between electron and hole conduction.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

One-step preparation P-doped sisal fiber hard carbon: a high electrochemical performance anode material for sodium ion batteries

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14638-w

Yujie Wang, Yuan Luo, Xuenuan Li, Shilong Lin, Yingxi Qin, Kailong Guo, Lei Liao, Weifang Wang, Kaiyou Zhang, Aimiao Qin

{"title":"One-step preparation P-doped sisal fiber hard carbon: a high electrochemical performance anode material for sodium ion batteries","authors":"Yujie Wang, Yuan Luo, Xuenuan Li, Shilong Lin, Yingxi Qin, Kailong Guo, Lei Liao, Weifang Wang, Kaiyou Zhang, Aimiao Qin","doi":"10.1007/s10854-025-14638-w","DOIUrl":"10.1007/s10854-025-14638-w","url":null,"abstract":"<div>Biomass hard carbon materials are considered as one of the most promising anode materials for sodium ion batteries due to their cost-effectiveness and low-voltage plateau capability. In this work, phosphorus-doped sisal fiber carbon (PSFC) anode material for sodium ion batteries with rich mesopores and micropores and high capacity retention was prepared by a one-step method using sisal fiber (SF) as the raw material. The P doping greatly improved the microstructure and the electrochemical performance of SFC. The specific capacity of PSFC was as high as 335.575 mAh g−1 for the first turn charge at a current density of 0.05 A g−1, and still maintained at 292.55 mAh g−1 after 500 cycles, with capacity retention rate as high as 87.1%. The first cycle efficiency is even improved from 19.65 to 45.55% for SFC. This work provides a simple and rapid strategy for improving the electrochemical performance of biomass hard carbon anode materials, with great potential for application.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14662-w

Fa Wu, Hao Li, Wei Cui, Guangyin Liu, Lun Zhang, Yang Feng, Saiyu Yang, Qin Tang, Pan Wang, Jun Shen, Zhaohuan Tang

引用次数: 0

Microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects fabricated by current driven bonding method with Sn-5Cu-5Ni composite solder

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI: 10.1007/s10854-025-14635-z

P. Liu, J. Ren, M. L. Huang

{"title":"Microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects fabricated by current driven bonding method with Sn-5Cu-5Ni composite solder","authors":"P. Liu, J. Ren, M. L. Huang","doi":"10.1007/s10854-025-14635-z","DOIUrl":"10.1007/s10854-025-14635-z","url":null,"abstract":"<div>Full intermetallic compound (IMC) interconnects have emerged as a promising die-attach solution for third-generation semiconductor power devices that operate at higher temperatures. This study aims to fabricate Cu/(Cu,Ni)6Sn5/Cu full IMC interconnects by the current driven bonding (CDB) method with Sn-5Cu-5Ni composite solder to achieve higher reliability. The use of Sn-5Cu-5Ni composite solder reduced the processing time by approximately 1/3 to only 10 min, and significantly refined (Cu,Ni)6Sn5 grains from 39.59 to 2.36 μm, compared to common pure Sn solder. Even after current stressing (150 °C, 1.0 × 104 A/cm2) for 500 h, the interfacial (Cu,Ni)3Sn in full (Cu,Ni)6Sn5 IMC interconnect increased by only 0.34 µm in thickness, in comparison to 2.92 μm for Cu3Sn in full Cu6Sn5 IMC interconnect. First-principles calculations indicated that doping Ni increased the diffusion activation energy (({text{Q}}_{text{a}})) for Cu atoms diffusing in Cu6Sn5 and Cu3Sn, from 1.60 and 1.56 eV/atom to 2.08 and 1.68 eV/atom, respectively, thereby inhibiting the growth of interfacial (Cu,Ni)3Sn. The average shear strength of full (Cu,Ni)6Sn5 IMC interconnects in as-fabricated state was 64.1 MPa and remained to be 62.8 MPa even after current stressing for 500 h, showing an excellent EM resistance. These findings suggest that the CDB method utilizing the composite solder is expected to realize full IMC interconnects with high strength and high EM reliability.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143749146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0