{"title":"Investigation of structural and dielectric characteristics of La-doped BZT ceramics","authors":"Ajay Kumawat, Sanjay Dhanka, Ankur Kumar, Abhinav Sharma, Shubhpreet Kaur, Nitin Kumar, Abhjit Bhowmik, Ajay Kumar, Ruby Pant, Harvinder Singh","doi":"10.1007/s10854-025-15841-5","DOIUrl":null,"url":null,"abstract":"<div><p>Barium zirconium titanate (BZT) has garnered considerable interest due to its tunable dielectric and ferroelectric properties, making it suitable for memory devices and multilayer capacitors. This study investigates the impact of lanthanum (La) doping (2%, 4%, and 5%) on the structural, dielectric, and electrical properties of BZT ceramics synthesized via the sol–gel method. X-ray diffraction (XRD) confirmed a single-phase tetragonal perovskite structure (P4mm), with lattice contraction (c/a ratio decreasing from 1.0095 to 1.0092) due to La<sup>3+</sup> substitution at the Ba<sup>2+</sup> site. A secondary phase (La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>) emerged at higher doping levels, reducing tetragonality and grain size (from 497 nm for pure BZT to 238 nm for 5% La-doped BZT), as evidenced by FESEM. Dielectric studies revealed frequency dispersion, with ε′ decreasing from 74,600 (BZT) to 55,067 (5% La-doped BZT) at 100 Hz due to suppressed interfacial polarization. The permittivity stabilized to ~ 1,200–1,500 at 1 MHz across all compositions, reflecting dominant electronic polarization at higher frequencies. La doping reduced dielectric losses (tanδ) by 20–30% above 10 kHz, indicating improved high-frequency stability and a shift in Curie temperature (T<sub>e</sub>) from 110 °C (BZT) to 120–121 °C (La-doped samples), attributed to altered ionic mobility. Impedance spectroscopy indicated a correlated barrier hopping (CBH) conduction mechanism, with activation energy decreasing from 0.052 eV (BZT) to 0.011–0.019 eV (La-doped samples), suggesting facilitated charge transport. Nyquist plots confirmed non-Debye relaxation, emphasizing the role of grain boundaries in conduction. This work demonstrates that La doping effectively tailors BZT’s functional properties, offering a pathway to optimize performance for high-frequency capacitive and energy storage applications. The findings provide new insights into defect-mediated property modulation in doped perovskites, distinguishing this study from prior literature through systematic quantification of La’s effects on lattice dynamics and conduction mechanisms.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15841-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Barium zirconium titanate (BZT) has garnered considerable interest due to its tunable dielectric and ferroelectric properties, making it suitable for memory devices and multilayer capacitors. This study investigates the impact of lanthanum (La) doping (2%, 4%, and 5%) on the structural, dielectric, and electrical properties of BZT ceramics synthesized via the sol–gel method. X-ray diffraction (XRD) confirmed a single-phase tetragonal perovskite structure (P4mm), with lattice contraction (c/a ratio decreasing from 1.0095 to 1.0092) due to La3+ substitution at the Ba2+ site. A secondary phase (La2Ti2O7) emerged at higher doping levels, reducing tetragonality and grain size (from 497 nm for pure BZT to 238 nm for 5% La-doped BZT), as evidenced by FESEM. Dielectric studies revealed frequency dispersion, with ε′ decreasing from 74,600 (BZT) to 55,067 (5% La-doped BZT) at 100 Hz due to suppressed interfacial polarization. The permittivity stabilized to ~ 1,200–1,500 at 1 MHz across all compositions, reflecting dominant electronic polarization at higher frequencies. La doping reduced dielectric losses (tanδ) by 20–30% above 10 kHz, indicating improved high-frequency stability and a shift in Curie temperature (Te) from 110 °C (BZT) to 120–121 °C (La-doped samples), attributed to altered ionic mobility. Impedance spectroscopy indicated a correlated barrier hopping (CBH) conduction mechanism, with activation energy decreasing from 0.052 eV (BZT) to 0.011–0.019 eV (La-doped samples), suggesting facilitated charge transport. Nyquist plots confirmed non-Debye relaxation, emphasizing the role of grain boundaries in conduction. This work demonstrates that La doping effectively tailors BZT’s functional properties, offering a pathway to optimize performance for high-frequency capacitive and energy storage applications. The findings provide new insights into defect-mediated property modulation in doped perovskites, distinguishing this study from prior literature through systematic quantification of La’s effects on lattice dynamics and conduction mechanisms.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.