Investigation of structure, morphology, dielectric, electrical, and electrochemical properties of Sr-doped BCZT perovskites

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ritesh Verma, Garima Rana, Syed Kashif Ali, Ahmed Hussain Jawhari, Ankush Chauhan
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引用次数: 0

Abstract

In this study, we synthesised (Barium Calcium Zirconate Titanate) BCZT and Sr-doped BCZT (Strontium doped Barium Calcium Zirconate Titanate) perovskites using the hydrothermal technique. The samples sintered at 600, 700, and 800 °C to analyse the effect of temperature on their structure, dielectric, electric, and electrochemical properties. The crystallite size obtained thorough XRD analysis is 23 ± 0.5 nm and FESEM micrographs revealed the formation of spherical grains which further corroborated by TEM micrographs. The dielectric loss ranges between 0.05 and 0.42 for all the samples which indicates the satisfactory contact formation. Nyquist plots show that a clear semi-circular arc is not formed in any of the samples, which is because of their highly resistive nature. DC resistivity results showed that with an increase in sintering temperature, the PTCR behaviour is observed to improve which suggests an increase in insulating or dielectric properties of the materials. For undoped BCZT, at around 50 °C the resistivity decreased with an increase in sintering temperature. The AC conductivity findings indicate the existence of space charge polarisation at low frequencies and mobile ionic species at high frequencies. The DC resistivity findings indicated that B1 and Bs1 exhibited the maximum conductivity at room temperature, whereas resistivity rose with increasing temperature, indicating PTCR behaviour for all samples. The CV analysis indicated that the greatest values of Cs, E, Qs, and q are recorded for Bs1, measuring 0.541 F/g, 0.59 Wh/kg, 0.000759 mAh/g, and 1.517 C, respectively, at a scan rate of 0.09 mV/s, while the second highest values are noted for Bs1, followed by B1. The results suggested that by regulating the processing temperature, the cation and anion vacancies may be effectively managed, leading to the targeted application of pristine and Sr-doped BCZT. This also indicates the versatile characteristics of BCZT-related materials, including applications from temperature sensors to electrochemical sensors. Thus, by utilising the obtained results, a multifunctional perovskite material could be developed using low-temperature synthesis method.

掺锶BCZT钙钛矿的结构、形貌、介电、电学和电化学性能研究
本研究采用水热法合成了锆钛酸钡钙(BCZT)和锶掺杂锆钛酸钡钙(BCZT)钙钛矿。样品在600、700和800℃下烧结,分析温度对其结构、介电、电学和电化学性能的影响。XRD分析得到的晶粒尺寸为23±0.5 nm, FESEM显微图显示为球形晶粒,TEM显微图进一步证实了这一点。所有样品的介电损耗在0.05 ~ 0.42之间,表明接触形成令人满意。奈奎斯特图显示,在任何样品中都没有形成清晰的半圆弧,这是由于它们的高电阻性。直流电阻率结果表明,随着烧结温度的升高,PTCR的行为有所改善,这表明材料的绝缘或介电性能有所提高。对于未掺杂的BCZT,在50℃左右,电阻率随烧结温度的升高而降低。交流电导率的研究结果表明,低频存在空间电荷极化,高频存在可移动离子。直流电阻率结果表明,B1和Bs1在室温下具有最大的电导率,而电阻率随温度升高而升高,表明所有样品都具有PTCR行为。CV分析表明,在扫描速率为0.09 mV/s时,Bs1的Cs、E、Qs和q值分别为0.541 F/g、0.59 Wh/kg、0.000759 mAh/g和1.517 C, Bs1的Cs、E、Qs和q值次之,B1次之。结果表明,通过调节加工温度,可以有效地控制阳离子和阴离子空位,从而有针对性地应用原始和掺杂sr的BCZT。这也表明了bczt相关材料的多用途特性,包括从温度传感器到电化学传感器的应用。因此,利用所获得的结果,可以使用低温合成方法开发多功能钙钛矿材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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