{"title":"掺la BZT陶瓷的结构和介电特性研究","authors":"Ajay Kumawat, Sanjay Dhanka, Ankur Kumar, Abhinav Sharma, Shubhpreet Kaur, Nitin Kumar, Abhjit Bhowmik, Ajay Kumar, Ruby Pant, Harvinder Singh","doi":"10.1007/s10854-025-15841-5","DOIUrl":null,"url":null,"abstract":"<div><p>Barium zirconium titanate (BZT) has garnered considerable interest due to its tunable dielectric and ferroelectric properties, making it suitable for memory devices and multilayer capacitors. This study investigates the impact of lanthanum (La) doping (2%, 4%, and 5%) on the structural, dielectric, and electrical properties of BZT ceramics synthesized via the sol–gel method. X-ray diffraction (XRD) confirmed a single-phase tetragonal perovskite structure (P4mm), with lattice contraction (c/a ratio decreasing from 1.0095 to 1.0092) due to La<sup>3+</sup> substitution at the Ba<sup>2+</sup> site. A secondary phase (La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>) emerged at higher doping levels, reducing tetragonality and grain size (from 497 nm for pure BZT to 238 nm for 5% La-doped BZT), as evidenced by FESEM. Dielectric studies revealed frequency dispersion, with ε′ decreasing from 74,600 (BZT) to 55,067 (5% La-doped BZT) at 100 Hz due to suppressed interfacial polarization. The permittivity stabilized to ~ 1,200–1,500 at 1 MHz across all compositions, reflecting dominant electronic polarization at higher frequencies. La doping reduced dielectric losses (tanδ) by 20–30% above 10 kHz, indicating improved high-frequency stability and a shift in Curie temperature (T<sub>e</sub>) from 110 °C (BZT) to 120–121 °C (La-doped samples), attributed to altered ionic mobility. Impedance spectroscopy indicated a correlated barrier hopping (CBH) conduction mechanism, with activation energy decreasing from 0.052 eV (BZT) to 0.011–0.019 eV (La-doped samples), suggesting facilitated charge transport. Nyquist plots confirmed non-Debye relaxation, emphasizing the role of grain boundaries in conduction. This work demonstrates that La doping effectively tailors BZT’s functional properties, offering a pathway to optimize performance for high-frequency capacitive and energy storage applications. The findings provide new insights into defect-mediated property modulation in doped perovskites, distinguishing this study from prior literature through systematic quantification of La’s effects on lattice dynamics and conduction mechanisms.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of structural and dielectric characteristics of La-doped BZT ceramics\",\"authors\":\"Ajay Kumawat, Sanjay Dhanka, Ankur Kumar, Abhinav Sharma, Shubhpreet Kaur, Nitin Kumar, Abhjit Bhowmik, Ajay Kumar, Ruby Pant, Harvinder Singh\",\"doi\":\"10.1007/s10854-025-15841-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Barium zirconium titanate (BZT) has garnered considerable interest due to its tunable dielectric and ferroelectric properties, making it suitable for memory devices and multilayer capacitors. This study investigates the impact of lanthanum (La) doping (2%, 4%, and 5%) on the structural, dielectric, and electrical properties of BZT ceramics synthesized via the sol–gel method. X-ray diffraction (XRD) confirmed a single-phase tetragonal perovskite structure (P4mm), with lattice contraction (c/a ratio decreasing from 1.0095 to 1.0092) due to La<sup>3+</sup> substitution at the Ba<sup>2+</sup> site. A secondary phase (La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>) emerged at higher doping levels, reducing tetragonality and grain size (from 497 nm for pure BZT to 238 nm for 5% La-doped BZT), as evidenced by FESEM. Dielectric studies revealed frequency dispersion, with ε′ decreasing from 74,600 (BZT) to 55,067 (5% La-doped BZT) at 100 Hz due to suppressed interfacial polarization. The permittivity stabilized to ~ 1,200–1,500 at 1 MHz across all compositions, reflecting dominant electronic polarization at higher frequencies. La doping reduced dielectric losses (tanδ) by 20–30% above 10 kHz, indicating improved high-frequency stability and a shift in Curie temperature (T<sub>e</sub>) from 110 °C (BZT) to 120–121 °C (La-doped samples), attributed to altered ionic mobility. Impedance spectroscopy indicated a correlated barrier hopping (CBH) conduction mechanism, with activation energy decreasing from 0.052 eV (BZT) to 0.011–0.019 eV (La-doped samples), suggesting facilitated charge transport. Nyquist plots confirmed non-Debye relaxation, emphasizing the role of grain boundaries in conduction. This work demonstrates that La doping effectively tailors BZT’s functional properties, offering a pathway to optimize performance for high-frequency capacitive and energy storage applications. The findings provide new insights into defect-mediated property modulation in doped perovskites, distinguishing this study from prior literature through systematic quantification of La’s effects on lattice dynamics and conduction mechanisms.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 28\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15841-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15841-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
钛酸锆钡(BZT)由于其可调谐的介电和铁电特性而获得了相当大的兴趣,使其适用于存储器件和多层电容器。本研究考察了2%、4%和5%镧(La)掺杂对溶胶-凝胶法制备BZT陶瓷结构、介电性能和电学性能的影响。x射线衍射(XRD)证实了其为单相四方钙钛矿结构(P4mm),由于Ba2+位置上La3+的取代导致晶格收缩(c/a比从1.0095降至1.0092)。FESEM证实,在高掺杂水平下,出现了一种二次相(La2Ti2O7),降低了四方性和晶粒尺寸(从纯BZT的497nm到5% la掺杂BZT的238nm)。电介质研究显示了频率色散,在100 Hz时,由于抑制了界面极化,ε′从74,600 (BZT)下降到55,067 (5% la掺杂的BZT)。在1 MHz时,所有成分的介电常数稳定在~ 1200 - 1500,反映了高频下的优势电子极化。在10 kHz以上,La掺杂降低了20-30%的介电损耗(tanδ),表明高频稳定性得到改善,居里温度(Te)从110°C (BZT)上升到120-121°C (La掺杂样品),这是由于离子迁移率的改变。阻抗谱分析显示了一种相关的垒跳(CBH)传导机制,激活能从0.052 eV (BZT)降低到0.011-0.019 eV (la掺杂样品),表明电荷输运更容易。奈奎斯特图证实了非德拜弛豫,强调了晶界在传导中的作用。这项工作表明,La掺杂有效地调整了BZT的功能特性,为优化高频电容和储能应用的性能提供了一条途径。这些发现为掺杂钙钛矿中缺陷介导的性质调制提供了新的见解,通过系统量化La对晶格动力学和传导机制的影响,将本研究与先前的文献区分开来。
Investigation of structural and dielectric characteristics of La-doped BZT ceramics
Barium zirconium titanate (BZT) has garnered considerable interest due to its tunable dielectric and ferroelectric properties, making it suitable for memory devices and multilayer capacitors. This study investigates the impact of lanthanum (La) doping (2%, 4%, and 5%) on the structural, dielectric, and electrical properties of BZT ceramics synthesized via the sol–gel method. X-ray diffraction (XRD) confirmed a single-phase tetragonal perovskite structure (P4mm), with lattice contraction (c/a ratio decreasing from 1.0095 to 1.0092) due to La3+ substitution at the Ba2+ site. A secondary phase (La2Ti2O7) emerged at higher doping levels, reducing tetragonality and grain size (from 497 nm for pure BZT to 238 nm for 5% La-doped BZT), as evidenced by FESEM. Dielectric studies revealed frequency dispersion, with ε′ decreasing from 74,600 (BZT) to 55,067 (5% La-doped BZT) at 100 Hz due to suppressed interfacial polarization. The permittivity stabilized to ~ 1,200–1,500 at 1 MHz across all compositions, reflecting dominant electronic polarization at higher frequencies. La doping reduced dielectric losses (tanδ) by 20–30% above 10 kHz, indicating improved high-frequency stability and a shift in Curie temperature (Te) from 110 °C (BZT) to 120–121 °C (La-doped samples), attributed to altered ionic mobility. Impedance spectroscopy indicated a correlated barrier hopping (CBH) conduction mechanism, with activation energy decreasing from 0.052 eV (BZT) to 0.011–0.019 eV (La-doped samples), suggesting facilitated charge transport. Nyquist plots confirmed non-Debye relaxation, emphasizing the role of grain boundaries in conduction. This work demonstrates that La doping effectively tailors BZT’s functional properties, offering a pathway to optimize performance for high-frequency capacitive and energy storage applications. The findings provide new insights into defect-mediated property modulation in doped perovskites, distinguishing this study from prior literature through systematic quantification of La’s effects on lattice dynamics and conduction mechanisms.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.