水热合成Nd2O3/g-CN杂化电极材料杂化超级电容器的应用

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mukhtiar Hussain, Salma Aman, Muhammad Aslam, Khursheed Ahmad, Ahmed M. Fallatah, Mohamed M. Ibrahim, Abdulraheem SA Almalki, Zeinhom M. El-Bahy
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引用次数: 0

摘要

化石燃料的枯竭及其对人类健康的有害影响要求开发替代能源,如超级电容器(SCs),作为具有高功率传输的能量存储的有用资源。本研究报道了一种简单的水热合成Nd2O3、(石墨碳氮化)g-CN和Nd2O3/g-CN杂化材料的方法。通过x射线衍射分析证实了Nd2O3纳米颗粒所观察到的六边形结构相。通过扫描电镜(SEM)观察了Nd2O3/g-CN杂化物的形貌特征,结果表明,在Nd2O3纳米颗粒中加入g-CN消除了纳米颗粒的团聚,g-CN的纳米片形貌增加了比表面积。制备的Nd2O3/g- cn杂化结构在1 A/g时的比电容(Csp)为960 F/g,循环5000次后仍保持稳定。结果证实了Nd2O3/g-CN复合材料优异的电化学性能,并表明其在储能技术中的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hydrothermal synthesis of Nd2O3/g-CN hybrid electrode material hybrid supercapacitor applications

The exhaustion of fossil fuels and its harmful effects on human health demand the development of alternate sources for energy generation such as supercapacitors (SCs) as useful resources for energy storage with high-power delivery. This study reports a straightforward hydrothermal route for the synthesis of Nd2O3, (graphitic carbon nitride) g-CN, and Nd2O3/g-CN hybrid materials. The Nd2O3 nanoparticles observed hexagonal structure phase was confirmed through X-ray diffraction analysis. The morphological characteristics of Nd2O3/g-CN hybrid are observed through scanning electron microscopy (SEM) which showed that the addition of g-CN in Nd2O3 nanoparticle removed the agglomeration of nanoparticles, and the nanosheets morphology of g-CN enhanced the surface area. Nd2O3/g-CN hybrid demonstrated specific capacitance (Csp) of 960 F/g at 1 A/g ( for the prepared nanohybrid structure, which showed stability even after 5000 cycles. The results confirm the exceptional electrochemical properties of Nd2O3/g-CN hybrid and show their suitability for use in energy storage technologies.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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