Structural insights, dielectric behavior, and third-order nonlinear optical properties of a supramolecular cocrystal of [(3-acetyl-1-methylpyridinium)2 (18-crown-6)] diiodide

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-20 DOI:10.1007/s10854-025-15821-9

Samandarov Elyorbek Shonazar ugli, Ibragimov Aziz Bakhtiyarovich, Loganathan Guganathan, Ayyar Manikandan, Ikram Iskandarovich Abdullaev, Yakubov Yuldosh Yusupboevich, Chellakarungu Balakrishnan

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引用次数: 0

Abstract

A supramolecular cocrystal of [(3-acetyl-1-methylpyridinium)₂(18-crown-6)] diiodide (3AP18C6) was synthesized via slow evaporation and characterized for its structural, dielectric, and third-order nonlinear optical (NLO) properties. FT-IR spectroscopy confirmed the functional groups, while UV–Vis and photoluminescence studies revealed a 2.87 eV band gap and green emission at 528 nm. SEM/EDS analysis verified elemental composition and morphology. Dielectric studies indicated frequency- and temperature-dependent relaxation behavior, with a notable phase transition near 100 °C. AC conductivity followed the power law model, highlighting thermally activated hopping transport. Z-scan analysis demonstrated negative nonlinearity and reverse saturable absorption, confirming third-order NLO activity. These findings establish 3AP18C6 as a promising multifunctional material for optoelectronic and photonic applications.

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[（3-乙酰-1-甲基吡啶）2(18-冠-6)]二碘化物超分子共晶的结构、介电行为和三阶非线性光学性质

采用慢蒸发法制备了[（3-乙酰-1-甲基吡啶）2(18-冠-6)]二碘化物（3AP18C6）超分子共晶，并对其结构、介电和三阶非线性光学（NLO）性质进行了表征。FT-IR光谱证实了官能团的存在，而UV-Vis和光致发光研究显示其带隙为2.87 eV，在528 nm处有绿色发射。SEM/EDS分析验证了元素组成和形貌。电介质研究表明了频率和温度相关的弛豫行为，在100°C附近有明显的相变。交流电导率遵循幂律模型，突出热激活跳跃输运。z扫描分析显示出负非线性和反向饱和吸收，证实了三阶NLO活性。这些发现表明3AP18C6是一种很有前途的光电和光子多功能材料。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.