Journal of Materials Science: Materials in Electronics最新文献_第8页

Effects of shell thickness and gate voltage on the photoresponse of InAs/InP core/shell nanowires 壳层厚度和栅电压对InAs/InP芯/壳纳米线光响应的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-22 DOI: 10.1007/s10854-025-15774-z

Min Bai, Zhe Liu, Hui Huang, Shufeng Xia

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Effect of hydrothermal time on Zn2+ transport channel in manganese dioxide 热液时间对二氧化锰中Zn2+输运通道的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-22 DOI: 10.1007/s10854-025-15765-0

Yao Xu, Zu-Tao Pan, Zhi-Cai Wang, Jing-Feng Hou, Ling-Bin Kong

{"title":"Effect of hydrothermal time on Zn2+ transport channel in manganese dioxide","authors":"Yao Xu, Zu-Tao Pan, Zhi-Cai Wang, Jing-Feng Hou, Ling-Bin Kong","doi":"10.1007/s10854-025-15765-0","DOIUrl":"10.1007/s10854-025-15765-0","url":null,"abstract":"<div>Manganese dioxide is an environmentally friendly, low-cost zinc-based energy storage electrode material. However, its practical application is easily hindered by slow diffusion kinetics and low specific capacity. During the preparation of manganese dioxide by hydrothermal method, we observed that the hydrothermal time had a significant effect on the zinc-ion transport channels in MnO2, which was manifested as a shift from 1 × 1 tunnel structure (MnO2-24h, hydrothermal for 24h) to 2 × 2 tunnel structure (MnO2-8h, hydrothermal for 8h). MnO2-8h sample achieves a faster Zn2+ migration rate due to the widening of ion channels and the microporous structure formed by the aggregation of nanowire morphology. At the same time, the sample demonstrated excellent specific capacity and stability. At a current density of 0.2 A g−1, the specific capacity is as high as 256.9 mA h g−1, which is much higher than that of the MnO2-24h sample. It also has excellent durability of 71.7% after 1000 cycles at 1 A g−1. In addition, the dynamic behavior shows that capacitive control is dominant, with the pseudo-capacitance of the MnO2-8h sample contributing up to 79% at 0.4 mV s−1.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Correction: Investigating the impact of heat treatment on the structural, optical, and electrical characteristics of Zn20Se80 thin films 修正：研究热处理对Zn20Se80薄膜结构、光学和电学特性的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-22 DOI: 10.1007/s10854-025-15844-2

Ali Alnakhlani, Abduelwhab B. Alwany, Belqees Hassan, M. A. Ahlam, Adnan Alnehia

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Electrical properties of low-temperature sintered PIN-PSN-PT ceramics with BiFeO3 addition 添加BiFeO3低温烧结PIN-PSN-PT陶瓷的电学性能

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-22 DOI: 10.1007/s10854-025-15817-5

Menghao Wang, Xiaoshuai Zuo, Pinyang Fang, Yujie Jia, Shuyuan Wang, Wei Long, Zengzhe Xi

{"title":"Electrical properties of low-temperature sintered PIN-PSN-PT ceramics with BiFeO3 addition","authors":"Menghao Wang, Xiaoshuai Zuo, Pinyang Fang, Yujie Jia, Shuyuan Wang, Wei Long, Zengzhe Xi","doi":"10.1007/s10854-025-15817-5","DOIUrl":"10.1007/s10854-025-15817-5","url":null,"abstract":"<div>Ternary ceramics 0.105PIN-0.465PSN-0.43PT (PIN-PSN-PT) with BiFeO3 addition were prepared using the two-step sintering method. Effect of BiFeO3 addition on the electrical properties and temperature stability of PIN-PSN-PT ceramics was investigated. The sintering temperatures could be reduced significantly from 1250 °C for PIN-PSN-PT ceramic to 900 °C for PIN-PSN-PT ceramics with BiFeO3 addition. For the PIN-PSN-PT ceramics with BiFeO3 ceramics, the densified microstructure could be obtained at the low temperature of 900 °C. A small amount of BiFeO3 addition could improve the phase transition temperature and piezoelectric properties. The best comprehensive electrical performances were obtained in PIN-PSN-PT-0.1wt%BiFeO3 ceramics with Curie temperature (Tc ~ 290 °C), piezoelectric constant (d33 ~ 465 pC/N), coercivity field (Ec ~ 11.41 kV/cm), plane electromechanical coupling coefficient (kp ~ 0.549) and mechanical quality factor (Qm ~ 125). Perfect temperature stability of piezoelectric and electromechanical properties was also remained below Curie temperature.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Hydrothermal synthesis and dual functional performance of NaDy(MoO₄)₂:Tb3⁺, NaDy(WO₄)₂:Tb3⁺, and Na₃Dy(VO₄)₂:Tb3⁺ nanomaterials for nitrofurantoin sensing and photocatalytic degradation NaDy（MoO₄）2:Tb3 +、NaDy（WO₄）2:Tb3 +和Na₃Dy（VO₄）2:Tb3 +纳米材料的水热合成及双功能性能对呋喃醌传感和光催化降解的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-21 DOI: 10.1007/s10854-025-15803-x

Nidhi Bhagat, Niharika, Swaita Devi, Richa Singhaal, Charanjeet Sen, Haq Nawaz Sheikh

{"title":"Hydrothermal synthesis and dual functional performance of NaDy(MoO₄)₂:Tb3⁺, NaDy(WO₄)₂:Tb3⁺, and Na₃Dy(VO₄)₂:Tb3⁺ nanomaterials for nitrofurantoin sensing and photocatalytic degradation","authors":"Nidhi Bhagat,  Niharika, Swaita Devi, Richa Singhaal, Charanjeet Sen, Haq Nawaz Sheikh","doi":"10.1007/s10854-025-15803-x","DOIUrl":"10.1007/s10854-025-15803-x","url":null,"abstract":"<div>The increasing prevalence of antibiotic residues in water sources poses a significant threat to environmental and public health. In this study, a series of lanthanide-doped nanomaterials—NaDy(MoO₄)₂:Tb3⁺, NaDy(WO₄)₂:Tb3⁺, and Na₃Dy(VO₄)₂:Tb3⁺—were synthesized via a hydrothermal method and systematically characterized. These nanomaterials were evaluated for their dual functionality in photoluminescent sensing and photocatalytic degradation of nitrofurantoin (NFT), a persistent and toxic antibiotic contaminant. Among them, Na₃Dy(VO₄)₂:Tb3⁺ exhibited the highest sensitivity for NFT detection, with a detection limit of 0.38 ppm and a Stern–Volmer constant (K_sv) of 5.05 × 104 M⁻1. The fluorescence quenching mechanism was attributed to luminescence resonance energy transfer (LRET), supported by a significant reduction in lifetime upon NFT exposure. NaDy(WO₄)₂:Tb3⁺ demonstrated outstanding photocatalytic performance, achieving 96% degradation of NFT under UV light within 60 min, enabled by a low bandgap (2.98 eV), high molar absorptivity, and enhanced generation of reactive species. These results highlight the potential of rare-earth-doped molybdate, tungstate, and vanadate nanomaterials as multifunctional platforms for environmental sensing and remediation.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Synthesis of Fe-doped ZnSxSe1−x thin films at low temperature: Impact of doping concentration on its crystallinity, morphology, optical, and electrical properties fe掺杂ZnSxSe1−x薄膜的低温合成：掺杂浓度对其结晶度、形貌、光学和电学性能的影响

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-21 DOI: 10.1007/s10854-025-15783-y

Mridusmita Boruah, Prasanta Kumar Saikia

{"title":"Synthesis of Fe-doped ZnSxSe1−x thin films at low temperature: Impact of doping concentration on its crystallinity, morphology, optical, and electrical properties","authors":"Mridusmita Boruah, Prasanta Kumar Saikia","doi":"10.1007/s10854-025-15783-y","DOIUrl":"10.1007/s10854-025-15783-y","url":null,"abstract":"<div>Fe-doped ZnSxSe1−x thin films at different concentrations of Fe (0.42, 0.88, 2.05, and 3.99 at%) have been synthesized using a simple, cost-effective solution-based technique. X-ray diffraction studies and high-resolution transmission electron microscope micrographs revealed that the films were polycrystalline and had a cubic zinc blende structure. The crystallite size decreased from 5 to 3 nm with increasing Fe concentration. The lattice strain calculated through the Williamson-Hall plot increases with the increase of Fe concentration. Field emission scanning electron microscope images revealed homogeneous and compact surface morphology at lower doping concentrations. The presence of spherical-shaped grains at higher doping concentration was confirmed by transmission electron microscope images. The optical band gap decreases from 3.39 to 3.27 eV with increased Fe concentration. An improvement in the electrical conductivity values with Fe doping concentration was observed for the films. Thus, Fe doping has shown some significant impact on various properties of ZnSSe films used in various optoelectronic applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Low-temperature one-pot synthesis of nickel and iodine-doped photosensitive thin films of lead(II) sulfide 低温一锅法合成镍碘掺杂硫化铅光敏薄膜

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-20 DOI: 10.1007/s10854-025-15816-6

L. N. Maskaeva, A. V. Pozdin, E. V. Mostovshchikova, V. F. Markov, O. S. Eltsov, V. I. Voronin, I. V. Baklanova, P. N. Mushnikov

{"title":"Low-temperature one-pot synthesis of nickel and iodine-doped photosensitive thin films of lead(II) sulfide","authors":"L. N. Maskaeva, A. V. Pozdin, E. V. Mostovshchikova, V. F. Markov, O. S. Eltsov, V. I. Voronin, I. V. Baklanova, P. N. Mushnikov","doi":"10.1007/s10854-025-15816-6","DOIUrl":"10.1007/s10854-025-15816-6","url":null,"abstract":"<div>The efficiency of combined donor–acceptor doping of thin lead sulfide films with nickel and iodine ions using the one-pot approach for obtaining photosensitive lead sulfide layers PbS(I, Ni) was shown. Chemical bath deposition of the lead sulfide films from an ammonia-citrate reaction mixture with a combined additive of NH4I and NiCl2 was carried. The conditions for the films deposition were preliminarily determined by analyzing ionic equilibria in an ammonia-citrate reaction mixture. Composition, morphology and structure of the synthesized layers were studied using scanning electron microscopy, energy-dispersive elemental analysis and X-ray diffraction. Non-monotonic changes of the content of the main elements Pb, S, I, and Ni in the lead sulfide films, lattice parameter, crystallographic orientation of grains, microstresses and coherent scattering regions, as well as band gap depending on the concentration of NiCl2 in the reaction bath with extreme values near 1–2 mM NiCl2 were revealed. The analysis of Raman and Fourier-transform infrared transmission spectra showed the formation of diiodine pentoxide I2O5, iodate ion IO3−, and nickel oxide NiO in the PbS(I, Ni) films in addition to the PbI2 phase. A 1.8-fold increase in voltage sensitivity and a 7.5-fold increase in detectivity of the PbS(I, Ni) film deposited in the presence of 0.15 M NH4I and 2 mM NiCl2 compared to the film deposited in the presence of only 0.15 M NH4I were found. A significant increase in voltage sensitivity and detectivity of the PbS(I, Ni) films is caused by a synergistic effect of the doping additives with the formation of photoactive phases of lead iodide and iodine and nickel oxides.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 26","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Construction of a nanoflower BiOCl/ZnWO4 heterojunction structure and its photocatalytic performance 纳米花BiOCl/ZnWO4异质结结构的构建及其光催化性能

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-20 DOI: 10.1007/s10854-025-15810-y

Fan Dong, Zhipeng Zhang, Chenglong Liu, Daolin Zhou, Haohao Wan, Mingxin Jin, Min Shao, Yushan Wan

{"title":"Construction of a nanoflower BiOCl/ZnWO4 heterojunction structure and its photocatalytic performance","authors":"Fan Dong, Zhipeng Zhang, Chenglong Liu, Daolin Zhou, Haohao Wan, Mingxin Jin, Min Shao, Yushan Wan","doi":"10.1007/s10854-025-15810-y","DOIUrl":"10.1007/s10854-025-15810-y","url":null,"abstract":"<div>A type II BiOCl/ZnWO4 heterojunction system was studied for the degradation of Tetracycline (TC). 1D ZnWO4 and 2D BiOCl were recombined into a petal-like structure, which successfully broadened the light response range and greatly improved the BET-specific surface area. The BiOCl/ZnWO4 heterojunction is characterized by XRD, TEM, SEM, XPS, and electrochemical tests. The photocatalytic degradation of TC was studied by considering the effects of catalyst dosage, TC concentration, pH value, and different water bodies. The improved BiOCl/ZnWO4 system exhibited increased TC degrading activity; the degradation rate of TC by BCl/ZW-13 within 100 min is 82.06%. Compared to pure BiOCl and ZnWO4, the rate was 1.6 and 7.9 times greater, respectively. In the combined pollution of TC and RhB, the BiOCl/ZnWO4 system showed a more stable degradation ability for TC. Furthermore, photoluminescence and electrochemical impedance spectroscopy results further supported the idea that the constructed nanoflower heterostructure effectively separated carriers and improved catalytic performance. The role of h+ in the degradation of TC was elucidated through free radical capture experiments and ESR technology. A potential mechanism of improved photocatalytic degradation by the BiOCl/ZnWO4 heterojunction was offered.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 26","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Low voltage varistor values and structural analysis for CuO and Ag nano–composite particles CuO和Ag纳米复合粒子的低压压敏电阻值及结构分析

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-20 DOI: 10.1007/s10854-025-15792-x

Mehar J. Panesar, Pragati Kumar, Hamnesh Mahajan, Ajeet Kumar Srivastava

{"title":"Low voltage varistor values and structural analysis for CuO and Ag nano–composite particles","authors":"Mehar J. Panesar, Pragati Kumar, Hamnesh Mahajan, Ajeet Kumar Srivastava","doi":"10.1007/s10854-025-15792-x","DOIUrl":"10.1007/s10854-025-15792-x","url":null,"abstract":"<div>Sol – Gel auto combustion method was used to synthesis Copper oxide nano powders whereas, Top—Down method was used to obtain Ag nano – powders, respectively. Various structural studies (XRD, FTIR), thermal studies (TGA), molecular studies (Raman) and morphological studies (FESEM, EDX, PSA) were studied using 4 varying nano structured compositions: CA1 [CuO, 1:0], CA2 [CuO + Ag, 1:1], CA3 [CuO + Ag, 1:2] and CA4 [Ag, 0:1]. TGA characterisation revealed 600 °C as calcination temperature for CuO which was in accordance with the theoretical data. XRD and FTIR analyses confirmed the formation of the desired nano-crystalline structures through the identification of characteristic structural peaks. Raman spectroscopy displayed ({text{C}}_{2text{h}}^{6}text{ C}2/text{c}) and ({text{O}}_{text{h}}^{5}text{Fm}3text{m}) as space groups for CuO and Ag nano – structures, respectively. An increase in the values for non – linear coefficient (α) was obtained for the composite mixtures, which meant an increase in the Ohm’s Law region was observed. The current (IN) and voltage (VN) values for varistor studies exhibited smaller value changes which made low – voltage valued sectors as their possible applicational field.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 26","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Interfacial mechanical and electrical reinforcement of flexible graphene microfiber stripes and their applications in flexible sensing and electromagnetic shielding 柔性石墨烯微纤维条纹的界面机电增强及其在柔性传感和电磁屏蔽中的应用

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-20 DOI: 10.1007/s10854-025-15812-w

Mengqi Duan, Haotian Zheng, Yongjie Yan, Jiaxiao Sun, Qi Ni, Qingqing Ni

{"title":"Interfacial mechanical and electrical reinforcement of flexible graphene microfiber stripes and their applications in flexible sensing and electromagnetic shielding","authors":"Mengqi Duan, Haotian Zheng, Yongjie Yan, Jiaxiao Sun, Qi Ni, Qingqing Ni","doi":"10.1007/s10854-025-15812-w","DOIUrl":"10.1007/s10854-025-15812-w","url":null,"abstract":"<div>Graphene membrane have insufficient mechanical and electrical properties due to their weak interlayer bonding and unstable interfacial structure. This constrains their applications in flexible sensors and functional electronic devices. To address the problem, a flexible graphene oxide membrane (GOM) were prepared using a solvent-evaporation method for reinforced interfacial mechanical and electrical properties. Their intrinsic interfacial structure was subsequently optimized through a combination of hydriodic acid thermal reduction and densification processing. The findings reveal that the reduced graphene oxide films, which were subjected to hydriodic acid reduction at 60 °C (rGOM@60) and subsequent moderate densification, exhibited markedly enhanced mechanical strength and electrical conductivity. Remarkably, the tensile strength reached 23.6 MPa, while the electrical conductivity increased to 149 S/cm. The optimized membrane demonstrated excellent long-term electrical stability in the simulated physiological conditions. The membrane showed the resistivity fluctuations less than 8% after continuous powering in saline for 96 h, minor resistivity fluctuations after 13 bending cycles, and minimal fragmentation after ball-milling. What is more, the membrane exhibited favorable biocompatibility, which was evidenced by a contact angle of 79.4° and cell viability comparable to the control group. The flexible graphene films hold promising applications, such as in the fields of biosensors and functional electronic devices.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 26","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0