Journal of Materials Science: Materials in Electronics最新文献

{"title":"Fabrication and enhanced electrical stability of Mn–Co–Fe–Zn–O NTC thin films by low temperature ion-beam-assisted deposition technology","authors":"Yibo He,&nbsp;Yuxian Song,&nbsp;Xinmiao Wang,&nbsp;Xijun Yan,&nbsp;Shusheng Pan,&nbsp;Wenwen Kong","doi":"10.1007/s10854-024-13760-5","DOIUrl":"10.1007/s10854-024-13760-5","url":null,"abstract":"<div><p>The Mn–Co–Fe–Zn–O negative temperature coefficient (NTC) thin films, vital for next-gen temperature sensors, face a pivotal hurdle in enhancing electrical stability. This study triumphantly crafted these films with ultra-high stability using ion-beam-assisted deposition (IBAD) at a relatively low temperature (240 °C). All films obtained under three different ion-beam types, Ar, O₂, and None, exhibit a dense, grain homogeneous morphology as well as a single spinel phase structure, and all show excellent NTC characteristics over the temperature range of 10–90 °C. The XRD peak shift and Raman signal attenuation indicate that ion-beam bombardment exerts control over the crystal structure. The application of Ar ion-beam assistance resulted in a significant reduction in film ageing drift, from 4.23% to 0.58%. This reduction was achieved by the Jahn–Teller distortions induced by the high concentration of Mn³⁺, and the low oxygen vacancy concentration. Further, the low processing temperature augments process compatibility with heat-sensitive substrates, safeguarding them from harm and hinting at vast potential in integrated circuits and innovative electronics manufacturing.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive analysis of structural, dielectric, and electrical properties of sol–gel synthesized Ba-doped bismuth ferric titanate perovskite nanoparticles","authors":"Ramzi Dhahri,&nbsp;Faouzia Tayari,&nbsp;Hasan B. Albargi,&nbsp;Elkenany Brens Elkenany,&nbsp;A. M. Al-Syadi,&nbsp;Navdeep Sharma,&nbsp;Madan Lal,&nbsp;Kais Iben Nassar","doi":"10.1007/s10854-024-13691-1","DOIUrl":"10.1007/s10854-024-13691-1","url":null,"abstract":"<div><p>This research aims to develop a perovskite ceramic with optimized electrical and dielectric properties for applications in energy storage, medical technologies, and electronic devices. A bismuth ferric titanate compound, Bi_0.9Ba_0.1Fe_0.8Ti_0.2O_₃, doped with barium at the A-site, was successfully synthesized using the sol–gel method. X-ray diffraction at room temperature confirmed a rhombohedral structure within the R3́C space group. Scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX) revealed an average grain size of 273 nm with uniform grain distribution and chemical composition. The study identified a clear correlation between temperature, frequency, and the material’s electrical characteristics. Impedance spectroscopy and electrical modulus analysis, conducted over a frequency range of 1 kHz to 1 MHz and temperatures between 260 and 340 K, indicated non-Debye relaxation behavior. Additionally, the material’s frequency-dependent electrical conductivity, analyzed through Jonscher’s law at various temperatures, showed that barium doping significantly enhanced conductivity and dielectric properties compared to undoped BiFeTiO₃. Consistent conduction and relaxation mechanisms were observed across the entire temperature range, highlighting the material's potential for use in capacitors and electric fields over a wide range of conditions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy","authors":"D. D. Meng,&nbsp;Y. R. Liu,&nbsp;D. Y. Su,&nbsp;X. Y. Ren,&nbsp;K. P. Su,&nbsp;H. O. Wang,&nbsp;L. Yang,&nbsp;S. Huang","doi":"10.1007/s10854-024-13706-x","DOIUrl":"10.1007/s10854-024-13706-x","url":null,"abstract":"<div><p>DO₁₉-ordered Mn₃Ga gained much attention recently due to their potential application in spintronic devices. However, there still remain several challenges to overcome before their practical application. We have studied the structural, magnetic, and transport properties of polycrystalline Mn₃Ga_0.8Ge_0.2. It was found that Ge-doped Mn₃Ga ingot undergoes a spin reorientation transition from a coplanar antiferromagnetic to a noncoplanar configuration of Mn moments at around 200 K, accompanied by the competition among magnetocrystalline anisotropy, ferromagnetic interaction, and antiferromagnetic coupling. Compared with other reports on polycrystalline Mn₃Ga, the Mn₃Ga_0.8Ge_0.2 alloy in our work has a higher spin reorientation transition temperature, which is related to the lattice distortion caused by Ge doping. The anomalous Hall effect can be observed from 10 to 350 K and the Hall resistivity at room temperature is 0.641 <i>μ</i>Ω cm. An apparent topological Hall effect (THE) was observed simultaneously in the hexagonal non-collinear polycrystalline Mn₃Ga_0.8Ge_0.2 ingots below 200 K. The origin of the present THE is attributed to the non-collinear triangular magnetic configuration with slight distortion. The maximum value of topological Hall resistivity can reach a value of about 0.242 <i>μ</i>Ω cm at 120 K. Our work provides an approach for topological spintronics applications using Mn₃X-based alloys.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaic performance in CIGS solar cells: effects of using Mg- and Al-doped ZnO thin-film layers as alternative TCO and front contact layer","authors":"Mehmet Fatih Gozukizil,&nbsp;Enes Nayman,&nbsp;Sinan Temel,&nbsp;Fatma Ozge Gokmen","doi":"10.1007/s10854-024-13717-8","DOIUrl":"10.1007/s10854-024-13717-8","url":null,"abstract":"<div><p>In this study, we aimed to improve the electrical, optical, and structural properties of ZnO-based layered CIGS solar cells by doping different ratios of Al and Mg. Al-doped ZnO and Mg-doped ZnO thin films were prepared using sol–gel spin-coating technique. The doping rates were 1%, 3%, and 5% for both materials. Structural, surface, and optical properties were analyzed using XRD, FESEM, AFM, and UV–Vis spectroscopy. The results revealed that Al doping increased surface roughness, while Mg doping decreased it. Al doping reduced the band gap to 3.05 eV, enhancing conductivity, whereas Mg doping increased the band gap to 3.52 eV, improving optical transparency. The ideal combination of AZ5/MZ1 layers achieved a significant efficiency increase of 26.46% in CIGS solar cells, compared to 23.24% with undoped ZnO layers. Additionally, the surface roughness values were found to be 224.3 nm for AZ5 and 69.7 nm for MZ5. This study demonstrates the potential of Al and Mg-co-doped ZnO thin films to improve the performance of solar cells and other optoelectronic devices, offering promising developments in renewable energy technologies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13717-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modified process engineering at morphotropic phase boundary for enhanced grain size and piezoelectric response in lead free BZT-BCT","authors":"Rajat Syal,&nbsp;Priyanka Sharma,&nbsp;Rahul Goel,&nbsp;Arun Kumar Singh,&nbsp;O. P. Thakur,&nbsp;K. K. Sharma,&nbsp;Sanjeev Kumar","doi":"10.1007/s10854-024-13735-6","DOIUrl":"10.1007/s10854-024-13735-6","url":null,"abstract":"<div><p>We perform systematic investigation on (1-x)Ba(Zr_0.20Ti_0.80)O₃-x(Ba_0.70Ca_0.30)TiO₃ ceramics prepared by solid state reaction technique. We thoroughly investigate the effect of synthesis procedure on crystal structure, microstructure, dielectric, ferroelectric, and piezoelectric properties. Room temperature X-Ray diffraction (XRD) patterns reveal that the as synthesized samples crystallize with desired perovskite phase. Scanning electron microscopy depicts that the grain size shows significant enhancement in size. Large grains having size ~ 36 μm were observed in 50(BZT-BCT) composition prepared using modified synthesis route. Dielectric analysis depicts that the Curie temperature ‘T_c’ and diffusive coefficient ‘γ’ are considerably affected by the synthesis process. Ferroelectric studies show the well saturated loops at 30 kV/cm, and observed maximum values of remnant polarization (P_r), saturation polarization (P_s) and low values of coercive field (E_c) ~ 12.39 μC/cm², 22.67 μC/cm² and 3.05 kV/cm, respectively for 50(BZT-BCT) composition. Excellent piezoelectric properties (d₃₃ ~ 520 pC/N and k_p ~ 57.5%) were observed in 50(BZT-BCT) ceramic. The present manuscript highlights the various parameters affected the synthesis process. The results show that the modified synthesis route enhanced the properties of the ceramic and are promising candidates for lead-free piezoelectric applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental investigation of a mixed metal oxide (MMO)-based sensor for the detection of adulterants (urea and melamine) in milk at room temperature","authors":"V. Shyamala,&nbsp;S. Radha,&nbsp;R. Kiruthika,&nbsp;K. R. Acchutharaman","doi":"10.1007/s10854-024-13730-x","DOIUrl":"10.1007/s10854-024-13730-x","url":null,"abstract":"<div><p> Milk has high biological and nutritional value and is an essential component of a healthy diet for both children and adults. Despite the serious health risks, milk contamination with substances such as urea, melamine remains a widespread problem today. The consumption of adulterated milk causes severe health effects. The Mixed Metal Oxide (MMO)-based sensor, composed of Zinc Oxide (ZnO) and Nickel Oxide (NiO), was developed using the low-temperature hydrothermal method. The synthesized MMO nanostructure was coated over the surface of the Glassy Carbon Electrode (GCE). The fabricated MMO sensor material was characterized using XRD, FESEM, and EDX analysis to check its structural integrity, morphological features, and elemental composition. The developed MMO sensor is experimentally analysed for melamine and urea detection using a Cyclic Voltammetry (CV) setup at room temperature. The developed MMO sensor exhibited a maximum current of 0.010 µA, a high sensitivity of 0.1069 µAmM⁻¹ cm⁻² in which the melamine in milk is 10.6 times higher than urea and melamine, and a short response of 2 s when using melamine milk samples. The fabricated MMO sensor is capable of detecting adulterants in milk samples as evidenced by its linearity, response time, Limit of Detection (LOD) and quantification (LOQ), stability, and reproducibility.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nano-TiO2 coating for improved electrical properties of outdoor high-voltage porcelain insulators","authors":"Khaled Belhouchet,&nbsp;Abderrahim Zemmit,&nbsp;Hocine Belhouchet,&nbsp;Abdelhafid Bayadi,&nbsp;Maximina Romero","doi":"10.1007/s10854-024-13756-1","DOIUrl":"10.1007/s10854-024-13756-1","url":null,"abstract":"<div><p>This study delves into the development of porcelain using local raw materials, focusing on insulator contamination as a crucial factor contributing to flashover and security issues in high-voltage power systems. To alleviate this problem, the introduction of nano-TiO₂ coating is proposed as a means to enhance the properties of porcelain insulators. This porcelain composition was formulated using a blend of kaolin, quartz, feldspar, and recycled waste glass. The resulting specimens underwent characterization through X-ray diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR) analyses. The research aims to evaluate the relationship between an insulator’s electrical performance and critical flashover voltage in the presence of nano-TiO₂ coating, based on experimental results. An artificial contamination test was conducted, and characterization techniques such as Atomic Force Microscopy (AFM) were employed to analyze surface, morphology, and thickness. Raman spectroscopy was utilized to analyze the TiO₂-coated surface. Electrical tests were performed on both coated and uncoated samples to assess the impact of the titanium dioxide film on electrical properties. The TiO₂ coating significantly enhances the reliability of porcelain insulators by increasing flashover voltage, reducing leakage current, and improving both dielectric strength and insulation resistance. Furthermore, the Finite Element Method (FEM) was applied to analyze the effects of coating on the porcelain insulator’s electrical performance. The results underscored the improvement in electrical properties of the studied porcelain, which can be attributed to the isolating properties of the nanoparticles. The combination of experimental and simulation results provides valuable insights into the influence of TiO₂ thin film and its role in enhancing the electrical properties of porcelain.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of partially embedded bimetallic gold-silver nanostructures for sucrose sensing applications","authors":"Ksh. Devarani Devi,&nbsp;Aditya Sharma,&nbsp;Sunil Ojha,&nbsp;Jai Parkash,&nbsp;Fouran Singh","doi":"10.1007/s10854-024-13718-7","DOIUrl":"10.1007/s10854-024-13718-7","url":null,"abstract":"<div><p>30 keV Ag⁻ ion implantation on Au thin film, 5 nm, deposited on glass substrates produces partially embedded bimetallic AuAg alloy nanostructures. Low energy Ag⁻ ion implantation is utilized to simultaneously achieve two objectives: first, it irradiates the Au thin layer, and second, it incorporates Ag atoms into the glass substrates. The investigations using Atomic Force Microscopy (AFM) reveal that the Ag^- ion implantation caused nanostructuring of the partially embedded irregularly shaped and spherical shaped nanostructures on glass substrates. The particle mean size is (37.5 ± 6.8) nm and the height profiles vary from 0 to 12 nm. The average separation distance between the particles is 131 nm, which indicates good separation. Measurements with Rutherford Backscattering Spectrometry (RBS) show mixing of Au atoms with Ag atoms in the host substrate, indicating alloy formation. Further, the results of UV–Vis (Surface Plasmon Resonance) absorption studies show only one SPR absorbance peak in the absorption spectra, that also support the synthesis of bimetallic AuAg alloy nanoparticles (NPs) in glass substrates. The mechanisms of production of partially embedded alloy nanostructure on the glass surface are explained by crater formation, sputtering; inter particle diffusion and mixing due to thermal spike caused by low energy Ag⁻ ion implantation. Sucrose sensing has been explored on these glass thin films comprising partially embedded bimetallic AuAg alloy nanostructures. Without the need for a probe, the SPRs of bimetallic AuAg alloy nanostructures are effective in detecting sucrose solutions, showing a noticeable blue shift (~ 11 nm) to 1 nM sucrose solution. However, there is no change in SPR position with further increase in concentration of sucrose solution. The result indicates complete coverage of NPs with 1 nM sucrose solution and detection limit is significantly lower than that of a 1 nM sucrose solution. The findings show that the sensing responses have potential applications in sensing of biomolecules.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of annealing treatment on oxalic acid-assisted electrodeposited CdS thin films for enhanced solar cell performance","authors":"Abla Kamilia Madkour,&nbsp;Fatiha Rogti,&nbsp;Linda Aissani,&nbsp;Ahmed Hamdi,&nbsp;Ahlam Belgroune,&nbsp;Abdelhalim Zoukel","doi":"10.1007/s10854-024-13751-6","DOIUrl":"10.1007/s10854-024-13751-6","url":null,"abstract":"<div><p>CdS thin films have been successfully electrodeposited by introducing oxalic acid in the electrolytic solution as a novel complexing agent to prevent sulfide precipitation. The CdS films were grown on an FTO/glass substrate at − 0.890 V for 10 min and then annealed at 120 °C and 400 °C, respectively, in air. X-ray diffraction revealed that the CdS films have mixed hexagonal and cubic phases with (311) cubic-CdS preferred orientation. Scanning electron microscopy (SEM) results illustrated a transition from compact grains with more spherical precipitations on the surface at 120 °C to denser and homogeneous structure with a large crystallite size at 400 °C. The energy dispersive spectroscopy (EDS) revealed a decrease in the S content and an under-stoichiometric composition of CdS film at 400 °C. The band gap value decreased from 2.47 to 2.24 eV as the annealing temperature increased, while optimum transmittance was obtained at 120 °C. Mott–Schottky analysis revealed n-type conductivity for both samples where the flat band potential and donor density vary with the annealing temperature from − 0.99 to − 1.02 V and from 3.9 × 10²⁰ to 1.1 × 10²¹ cm⁻³, respectively. The electrochemical impedance studies affirmed that the electrochemical process is under kinetic control and demonstrated lower <i>R</i>_CT at 400 °C. PEC measurements showed enhancement in the <i>V</i>_OC and <i>J</i>_SC at 400 °C, indicating improved sensitivity and efficiency for photodetection. The slow decay of dark and photocurrent was attributed to defects and local potential fluctuations within the films. These findings highlight the effectiveness of using oxalic acid in the deposition process of CdS thin films making them suitable for solar cell applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13751-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lifetime prediction and fracture behavior of shear cycled Cu/Sn–3.0Ag–0.5Cu/Cu joints under current stressing","authors":"Wangyun Li,&nbsp;Longgen Liu,&nbsp;Feng Chen,&nbsp;Yiqin Xu,&nbsp;Hongbo Qin,&nbsp;Yubing Gong","doi":"10.1007/s10854-024-13692-0","DOIUrl":"10.1007/s10854-024-13692-0","url":null,"abstract":"<div><p>Influences of shear amplitude and joint height on fatigue lifetime and fracture behavior of Cu/Sn–3.0Ag–0.5Cu/Cu joints with increasing current density were investigated. The results show that fatigue lifetime was shortened with increasing shear amplitude and current density but presented no joint height-dependency. A fatigue lifetime prediction model considering electric current stressing was proposed, and the predicted values were close to the experiment results. Additionally, when the current density increased, the fracture initially occurred in the solder matrix with a ductile mode, then shifted to partial at the solder/IMC layer interface with a ductile–brittle mixed mode, and finally migrated to complete at the solder/IMC layer interface with a brittle mode, showing a prominent ductile-to-brittle transition. These changes were mainly due to the sharply aggravated strain mismatch at the interface.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142519062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}