Journal of Materials Science: Materials in Electronics最新文献

{"title":"Morphotropic phase boundary modulation via Er3+/Yb3+ Co-substitution in lead-free NBT–BT ceramics for multifunctional dielectric, piezoelectric, and optical applications","authors":"N. Manohar Reddy,&nbsp;P. Sreenivasa Rao,&nbsp;Ch. Rajasekhar,&nbsp;T. Radha Rani,&nbsp;P. H. K. Charan,&nbsp;Ramu Boddepalli,&nbsp;Manjula Bharathi Nagulapati,&nbsp;C. Jayakumar,&nbsp;Kavuluri Pushpalatha,&nbsp;Nageswara Rao Medikondu,&nbsp;M. Ramanaiah","doi":"10.1007/s10854-026-17342-5","DOIUrl":"10.1007/s10854-026-17342-5","url":null,"abstract":"<div><p>Lead-free ferroelectric ceramics based on sodium bismuth titanate (Na_0.5Bi_0.5TiO₃, NBT) are promising candidates for environmentally benign multifunctional devices; however, their practical application is limited by high coercive fields and restricted electromechanical response. In this study, 0.94Na_0.5Bi_{0.5-<i>x-y</i>}Er_<i>x</i>Yb_<i>y</i>TiO₃–0.06BaTiO₃ (NBEY-BT) ceramics with (<i>x</i> = <i>y</i> = 0.0 &amp; 0.1) were synthesized via a conventional solid-state route to investigate the effect of Er³⁺/Yb³⁺ co-doping on the structural, microstructural, ferroelectric, and optical properties. X-ray diffraction combined with Rietveld refinement confirms a single-phase perovskite structure with coexisting rhombohedral (R3c) and tetragonal (P4mm) phases, characteristic of morphotropic phase boundary behavior. Er³⁺/Yb³⁺ co-substitution increases the tetragonal phase fraction and induces local lattice strain without forming secondary phases. Microstructural analysis reveals dense ceramics with uniform grain distribution and a reduced average grain size upon rare-earth doping. Ferroelectric measurements show well-saturated polarization–electric field hysteresis loops, with the co-doped composition exhibiting a reduced coercive field and enhanced domain switchability while maintaining high polarization. A pronounced improvement in piezoelectric performance is achieved in the doped composition, which exhibits higher d₃₃ values at lower electric fields due to facilitated non-180° domain switching and polarization rotation near the morphotropic phase boundary. Furthermore, efficient Yb³⁺-sensitized Er³⁺ upconversion photoluminescence under 980 nm excitation is observed, introducing multifunctional optical functionality absent in the undoped ceramic. Notably, only the Er³⁺/Yb³⁺-substituted ceramics display strong upconversion photoluminescence under 980 nm excitation, characterized by green (⁴S_3/2 → ⁴I_15/2) and red (⁴F_9/2 → ⁴I_15/2) emissions arising from efficient Yb³⁺ → Er³⁺ energy transfer. The coexistence of ferroelectric polarization and upconversion luminescence in NBEY-BT ceramics highlights their potential as multifunctional dipolar luminescent materials for advanced optoelectronic, sensing, and energy-harvesting applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147797169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mesoporous CuBi2O4 nanocuboids engineered for enhanced photocatalytic degradation of acid orange 7 dye","authors":"Ubaid Sidiqi,&nbsp;Dinesh Kumar","doi":"10.1007/s10854-026-17339-0","DOIUrl":"10.1007/s10854-026-17339-0","url":null,"abstract":"<div><p>CuBi₂O₄ has been widely explored for dye degradation owing to its favorable visible-light responsiveness; however, its photocatalytic efficiency is strongly influenced by morphology, thereby limiting its broader applicability. In this study, mesoporous CuBi₂O₄ (CBO) nanocuboid rods were successfully synthesized via a hydrothermal route to investigate morphology-driven enhancement in photocatalytic performance toward Acid Orange 7 (AO7) degradation. The well-defined nanocuboid rod architecture provided improved structural stability and accessible surface-active sites. The CBO nanocuboid rods exhibited a crystallite size of 21 nm, a specific surface area of 2.151 m²/g, and a mesoporous structure with a pore size of 3 nm and a pore volume of 0.0077747 cm³/g. Under visible light irradiation, 0.01 g/L of CBO nanocuboid rods achieved 99.5% degradation of 20 mg/L AO7 (200 mL) within 180 min, surpassing the degradation capabilities of other photocatalysts. The degradation kinetics followed a pseudo-first-order model with a rate constant of 0.02755 min^–1. Electron paramagnetic resonance (EPR) and radical scavenging experiments confirmed that both hydroxyl (•OH) and superoxide (O₂•⁻) radicals, along with photogenerated holes (h⁺), play dominant roles in the degradation process. The CBO nanocuboid rods demonstrated excellent reusability, maintaining 93.2% of their initial degradation efficiency after four consecutive regeneration cycles. These findings highlight the critical role of nanocuboid rod morphology in enhancing charge transfer dynamics and photocatalytic efficiency, providing insight into morphology-engineered CBO systems for sustainable wastewater treatment.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-026-17339-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fast response, narrow-band photodetector based on MAPbI3-MAPbBr3 single crystal heterojunctions","authors":"Chaofan Guo,&nbsp;Yiping Du,&nbsp;Haoyang Guan,&nbsp;Jinglong Zhu,&nbsp;Lin Ma,&nbsp;Zhengguang Yan,&nbsp;Jiawen Xiao","doi":"10.1007/s10854-026-17357-y","DOIUrl":"10.1007/s10854-026-17357-y","url":null,"abstract":"<div><p>Narrowband photodetectors exhibit considerable potential for high-resolution imaging and encrypted communication systems owing to their high spectral resolution capabilities. In this study, a composite perovskite single-crystal heterojunction (SCH) consisting of MAPbBr₃ and MAPbI₃ was fabricated by epitaxially growing MAPbI₃ on a MAPbBr₃ single crystal substrate. A carbon paste light-window electrode was applied to the MAPbI₃ surface following a spatially modulated electrode strategy. The resulting device demonstrates outstanding narrowband detection performance, featuring a full width at half maximum (<i>FWHM</i>) of 21 nm, a spectral rejection ratio (<i>SRR</i>) of 137, a specific detectivity of 1.24 × 10¹¹ Jones (cm Hz^1/2W⁻¹), a responsivity of 0.56 A W⁻¹, and a fast response time (34.86/42.81 μs). The exceptional narrowband detection capabilities of this single-crystal heterojunction device would broaden the application prospects of perovskite-based photodetectors in the field of optoelectronics.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147797214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of CuO/rGO nanocomposite back-contact layer for CdTe solar cells","authors":"V. Vishnu Narayanan,&nbsp;S. R. Vishnu Vijay,&nbsp;C. P. Aiswarya,&nbsp;Meghna Pavithran,&nbsp;K. S. Rajni,&nbsp;Udai P. Singh","doi":"10.1007/s10854-026-17330-9","DOIUrl":"10.1007/s10854-026-17330-9","url":null,"abstract":"<div><p>The present study explores the compatibility of p-type CuO/rGO nanocomposite back-contact layer for CdTe solar cells in superstrate geometry. Monoclinic CuO nanoparticles (38.74 nm avg. size) and defect-engineered rGO (<i>I</i>(D)/<i>I</i>(G) = 1.38) were synthesized via hydrothermal and modified Hummers’ methods, respectively. Three different CuO/rGO nanocomposites were developed by varying the CuS:rGO mass ratios (1:1, 0.6:1, and 0.3:1), and this is confirmed using the XRD analysis and is supported by the micro-Raman analysis. The oxidation states, chemical, and electronic properties of the nanocomposite with an equal CuO: rGO ratio were analyzed using the XPS and UPS analysis, respectively. All samples had a direct allowed bandgap in the range 1.1.2 to 1.8 eV. The prepared nanoparticles and nanocomposites were spin-coated on top of the deposited FTO/CdS/CdTe; finally, silver was used as the back metal contact. From the <i>J</i>–<i>V</i> characterization, the cell with rGO back contact produced a power conversion efficiency of 8.85% with open circuit voltage (<i>V</i>_oc), short circuit current density (<i>J</i>_sc), and fill factor (FF) values of 0.73 V, 21.38 mA/cm², and 57.15%, respectively. The results indicate that the prepared CuO/rGO nanocomposites did not perform as intended due to the formation of a potential barrier of approximately 0.55 eV at the CdTe//CuO/rGO interface.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147797107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancing sustainable optoelectronics: Bis (diisopropylammonium) molybdate (SR-IPAM) single crystal for high-efficiency SHG, optical limiting, and THz emission","authors":"M. Rekha","doi":"10.1007/s10854-026-17353-2","DOIUrl":"10.1007/s10854-026-17353-2","url":null,"abstract":"<div><p>In order to investigate its potential as a nonlinear optical (NLO) and terahertz (THz) generating material, a high-quality, bulk Bis (diisopropylammonium) molybdate (SR-IPAM) single crystal was successfully produced utilizing the Sankaranarayanan–Ramasamy (S–R) process. Single-crystal X-ray diffraction demonstrated that SR-IPAM crystallizes in the tetragonal, non-centrosymmetric space group P4₃2₁2, suited for second-order NLO processes. The crystal has a refractive index of 1.734, a sharp UV cutoff, mild birefringence, and good optical transparency. Excellent crystalline perfection with a small FWHM of 13.192 arcsec was found by high-resolution X-ray diffraction. Mechanical experiments indicated reverse indentation size effect behavior, suggesting strong structural stiffness. The SR-IPAM crystal demonstrated efficient optical limiting with a saturation threshold near 3.3 mW mm⁻², and a laser damage threshold of 0.645 GW cm⁻², showing strong photostability. SHG efficiency was measured to be 5.9 times higher than KDP, and Maker fringe analysis gave an effective nonlinear coefficient of 0.1339 pm V⁻¹. Furthermore, substantial nonlinear refractive behavior was seen in third-order nonlinear investigations, with χ(3) = 3.01 × 10⁻² esu. Most notably, SR-IPAM displayed unambiguous THz emission through optical rectification employing 140 fs, 800 nm pulses, validating its capacity as a prospective THz-generating crystal. These discoveries position SR-IPAM as a multipurpose NLO material suited for frequency conversion, THz photonics, and high-power optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional properties of Pr-substituted BaFe12O19 hexaferrites: structural, magnetic, optoelectronic, and ferroelectric investigation","authors":"Hemant Kumar,&nbsp;Mohd Aamir Mumtaz,&nbsp;Pammi Kumari,&nbsp;Sujit Kumar,&nbsp;Aniket Manash,&nbsp;Muhammad Imran Khan","doi":"10.1007/s10854-026-17294-w","DOIUrl":"10.1007/s10854-026-17294-w","url":null,"abstract":"<div><p>This work presents a comprehensive investigation of the structural, magnetic, optical, and dielectric properties of praseodymium-doped barium hexaferrite nanomaterials, BaPr_<i>x</i>Fe_{12−<i>x</i>}O₁₉ (<i>x</i> = 0.00 and 1), synthesized via a heat treatment method at 850 °C. Fourier transform infrared (FTIR) spectroscopy confirms the formation of the hexaferrite phase through characteristic metal–oxygen vibrational modes and enables the evaluation of force constants, bond lengths, and functional groups. X-ray diffraction (XRD) analysis reveals the formation of M-type hexaferrite with a hexagonal structure, accompanied by a minor BaFe₂O₄ secondary phase, while providing detailed crystallographic parameters influenced by Pr³⁺ substitution. Thermogravimetric analysis (TGA) demonstrates excellent thermal stability of the samples beyond 780 °C, indicating their suitability for high-temperature applications. Magnetic characterization using vibrating sample magnetometry (VSM) shows a notable enhancement in magnetic behavior with Pr incorporation, attributed to lattice distortion and modified superexchange interactions. Optical properties investigated via UV–Visible spectroscopy reveal a direct band gap, which increases systematically with Pr concentration, highlighting effective band gap tuning—one of the key novel outcomes of this study. Dielectric and ferroelectric measurements indicate that Pr³⁺ ion substitution suppresses electrical leakage by stabilizing the lattice and hindering charge carrier mobility, thereby enhancing remnant polarization and coercive polarization. Overall, the improved structural stability, enhanced magnetic performance, tunable optical band gap, and favorable dielectric characteristics establish Pr-doped BaFe₁₂O₁₉ nanomaterials as promising multifunctional candidates for advanced optical, magnetic, electronic, and potential biomedical applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial polarization in PMMA/SiC–NiO hybrid nanocomposites with enhanced dielectric and mechanical performance for flexible electronic applications","authors":"Kiran Thakur,&nbsp;Jitendra Prakash Chandra,&nbsp;Dinesh Uthra,&nbsp;Ahmed Hashim","doi":"10.1007/s10854-026-17288-8","DOIUrl":"10.1007/s10854-026-17288-8","url":null,"abstract":"<div><p>Hybrid polymer nanocomposites are increasingly explored as lightweight dielectric materials for flexible electronic systems, where simultaneous electrical performance and mechanical robustness are required. This study investigates interfacial polarization in hybrid polymethyl methacrylate (PMMA) nanocomposites reinforced with n-type silicon carbide (SiC) and p-type nickel oxide (NiO) nanoparticles. The nanocomposite films were synthesized via a solution-casting route to examine how p–n interfaces influence the electrical and mechanical properties simultaneously, which remains relatively unexplored in PMMA-based hybrid nanocomposites. Structural and morphological characterizations (XRD, FTIR, SEM) confirmed the amorphous nature of PMMA and the uniform dispersion of SiC and NiO, enabling the formation of stable polymer–ceramic interphases. The simultaneous incorporation of n-type and p-type fillers generated localized p–n interfacial polarization, which enhanced Maxwell–Wagner–Sillars interfacial polarization and space-charge accumulation. Consequently, the hybrid nanocomposites exhibited a substantial dielectric enhancement, achieving a dielectric constant of ε′ ≈ 392 at 5 wt% loading, accompanied by an increase in AC conductivity to 1.79 × 10⁻⁶ S/cm, governed predominantly by hopping and tunneling mechanisms. The mechanical testing conducted with the Universal Testing Machine further demonstrated notable reinforcement, with tensile strength increasing by 79% and Young’s modulus improving 5.5-fold (10.85 MPa) relative to pristine PMMA, attributed to restricted polymer chain mobility and effective load transfer at the interfaces. The findings indicate that SiC–NiO hybrid fillers offer a viable method for optimizing the dielectric and mechanical properties of PMMA-based nanocomposites for prospective applications in flexible electronic materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of sulfur vacancies on ITO/n-MoS2-x/p-Si/ p+-Si (Al)Ag heterojunction solar cell: a simulation and experimental study","authors":"Anterdipan Singh,&nbsp;Pratima Agarwal","doi":"10.1007/s10854-026-17322-9","DOIUrl":"10.1007/s10854-026-17322-9","url":null,"abstract":"<div><p>In this work, MoS_2-x thin films are deposited on silicon and Corning substrates. The film deposited on silicon substrate is used to fabricate ITO/MoS_2-x/c-Si(p)/p⁺-Si(Al)/Ag heterojunction solar cell. The fabricated device exhibits a maximum power conversion efficiency of 3.28%, with V_oc of 0.268 V, J_sc of 33.59 mA cm⁻², and FF of 0.364. Dark J–V characteristics are analyzed using the single-diode model. The presence of sulfur vacancies in the MoS_2-x thin film was confirmed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Photoluminescence (PL) spectroscopy was employed to estimate the electron concentration in the film, yielding a value of 4.33 <span>(times)</span> 10¹⁷ cm^−3., which is primarily attributed to shallow donor states. To predict the influence of sulfur vacancy variations on the illuminated J–V characteristics of the ITO/MoS_2-x/c-Si(p)/p⁺-Si(Al)/Ag device, a two-defect model consisting of shallow (<i>N</i>_{<i>shallow</i>}) and deep (<i>N</i>_<i>deep</i>) states was implemented in Sentaurus TCAD. A systematic variation of these defect densities, one at a time, was used to study their influence on the J–V curve of the device. The increase in <i>N</i>_{<i>shallow</i>} density is found to enhance the device performance while the increase in <i>N</i>_<i>deep</i> density degrades the efficiency of the device. Subsequently, by fitting the experimentally measured J–V curve (under illumination) of the fabricated device with the TCAD results, the sulfur vacancy densities were estimated to be approximately <i>4.5</i> × <i>10</i>^<i>17</i><i> cm</i>^<i>−3</i> and <i>1</i> × <i>10</i>^<i>18</i><i> cm</i>^<i>−3</i> for shallow defect (<i>N</i>_{<i>shallow</i>}) and deep defect (<i>N</i>_<i>deep</i>), respectively. The concentration of shallow defects is in good agreement with that assessed from the PL data.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147797108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid crystal growth and physical property characterization of double-mixed topological insulator BiSbTeSe2","authors":"Dinesh Kumar,&nbsp;Ganesh Gurjar,&nbsp;N. K. Karn,&nbsp;V. P. S. Awana,&nbsp; Sudesh","doi":"10.1007/s10854-026-17351-4","DOIUrl":"10.1007/s10854-026-17351-4","url":null,"abstract":"<div><p>This work reports the rapid synthesis and comprehensive physical characterization of single-crystalline double-mixed topological insulator BiSbTeSe₂ (BSTS). Single crystals were grown using a single step melt-growth method, enabling faster growth of the single crystals, with the growth direction along the c-axis as confirmed by single-crystal X-ray diffraction (XRD). Structural characterization via XRD and Raman spectroscopy revealed characteristic bonding and vibrational modes indicative of the mixed topological phase. The physical characterization of the grown crystals was performed using a physical property measurement system, where resistance measurements were performed down to 2 K and under a transverse magnetic field. The resistance vs. temperature <i>R</i>(T) measurement down to 2 K at 0 Tesla demonstrated a metallic to insulating transport characteristic with saturating plateaus below 10 K. Under a transverse magnetic field the magnetoresistance (MR) shows drastic deviations from its parent mixed TI counterpart BiSbTe₃. At low temperatures, the crystal exhibits negative MR that gradually diminishes as the temperature increases, which is interpreted in terms of defect-induced localized states and substitutional disorder at the Te/Se sites. These, along with the electron–electron interaction effects, likely contribute to weak anti-localization to weak localization crossovers.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147797212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Layer-dependent evolution in the physical properties of spin-coated cadmium oxide thin films and performance evaluation of p-Si/n-CdO/Al heterojunction diodes","authors":"Prathiksha,&nbsp;Dhananjaya Kekuda,&nbsp;Mohan Rao K","doi":"10.1007/s10854-026-17354-1","DOIUrl":"10.1007/s10854-026-17354-1","url":null,"abstract":"<div><p>This work provides a detailed investigation on the physical characteristics of spin-coated CdO thin films and the transport phenomena in p-Si/n-CdO/Al heterojunction diodes based on the number of layers. The GI-XRD studies clearly depicted the presence of the cubic CdO structure with (111) preferred orientation, signifying an improvement in crystallinity. FESEM and AFM observations disclosed that although the films were homogeneous at lower deposited layers, surface agglomeration and roughness were evident in higher deposited layers. Optical analysis depicted a marginal reduction in the band gap value up to 12 layers, followed by a slight increase, indicating modifications in the electronic structure. The XPS measurements indicated a variation in Cd²⁺ concentration, thereby indicating the presence of oxygen vacancies. The electrical analysis using the thermionic emission and Cheung models revealed that the barrier height values increased with an increased number of layers. A rectification ratio of three orders is obtained in the device at 10 layers. The results clearly signify that optimising the layers can significantly improve the performance of metal oxide-based heterojunction diodes in electronic and optoelectronic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-026-17354-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147797215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}