CuO和Ag纳米复合粒子的低压压敏电阻值及结构分析

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mehar J. Panesar, Pragati Kumar, Hamnesh Mahajan, Ajeet Kumar Srivastava
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引用次数: 0

摘要

采用溶胶-凝胶自燃烧法制备了氧化铜纳米粉体,采用自上而下法制备了银纳米粉体。采用CA1 [CuO, 1:0]、CA2 [CuO + Ag, 1:1]、CA3 [CuO + Ag, 1:2]和CA4 [Ag, 0:1] 4种不同的纳米结构成分进行了各种结构研究(XRD, FTIR)、热研究(TGA)、分子研究(Raman)和形态学研究(FESEM, EDX, PSA)。TGA表征表明,CuO的煅烧温度为600℃,与理论数据一致。XRD和FTIR分析通过特征结构峰的识别证实了所需纳米晶结构的形成。拉曼光谱显示,CuO和Ag纳米结构的空间基团分别为\({\text{C}}_{2\text{h}}^{6}\text{ C}2/\text{c}\)和\({\text{O}}_{\text{h}}^{5}\text{Fm}3\text{m}\)。复合材料的非线性系数(α)增大,表明欧姆定律区域增大。压敏电阻器的电流和电压变化较小,这使得低压值领域成为其可能的应用领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Low voltage varistor values and structural analysis for CuO and Ag nano–composite particles

Low voltage varistor values and structural analysis for CuO and Ag nano–composite particles

Low voltage varistor values and structural analysis for CuO and Ag nano–composite particles

Sol – Gel auto combustion method was used to synthesis Copper oxide nano powders whereas, Top—Down method was used to obtain Ag nano – powders, respectively. Various structural studies (XRD, FTIR), thermal studies (TGA), molecular studies (Raman) and morphological studies (FESEM, EDX, PSA) were studied using 4 varying nano structured compositions: CA1 [CuO, 1:0], CA2 [CuO + Ag, 1:1], CA3 [CuO + Ag, 1:2] and CA4 [Ag, 0:1]. TGA characterisation revealed 600 °C as calcination temperature for CuO which was in accordance with the theoretical data. XRD and FTIR analyses confirmed the formation of the desired nano-crystalline structures through the identification of characteristic structural peaks. Raman spectroscopy displayed \({\text{C}}_{2\text{h}}^{6}\text{ C}2/\text{c}\) and \({\text{O}}_{\text{h}}^{5}\text{Fm}3\text{m}\) as space groups for CuO and Ag nano – structures, respectively. An increase in the values for non – linear coefficient (α) was obtained for the composite mixtures, which meant an increase in the Ohm’s Law region was observed. The current (IN) and voltage (VN) values for varistor studies exhibited smaller value changes which made low – voltage valued sectors as their possible applicational field.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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