Electrical properties of low-temperature sintered PIN-PSN-PT ceramics with BiFeO3 addition

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-22 DOI:10.1007/s10854-025-15817-5

Menghao Wang, Xiaoshuai Zuo, Pinyang Fang, Yujie Jia, Shuyuan Wang, Wei Long, Zengzhe Xi

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引用次数: 0

Abstract

Ternary ceramics 0.105PIN-0.465PSN-0.43PT (PIN-PSN-PT) with BiFeO₃ addition were prepared using the two-step sintering method. Effect of BiFeO₃ addition on the electrical properties and temperature stability of PIN-PSN-PT ceramics was investigated. The sintering temperatures could be reduced significantly from 1250 °C for PIN-PSN-PT ceramic to 900 °C for PIN-PSN-PT ceramics with BiFeO₃ addition. For the PIN-PSN-PT ceramics with BiFeO₃ ceramics, the densified microstructure could be obtained at the low temperature of 900 °C. A small amount of BiFeO₃ addition could improve the phase transition temperature and piezoelectric properties. The best comprehensive electrical performances were obtained in PIN-PSN-PT-0.1wt%BiFeO₃ ceramics with Curie temperature (T_c ~ 290 °C), piezoelectric constant (d₃₃ ~ 465 pC/N), coercivity field (E_c ~ 11.41 kV/cm), plane electromechanical coupling coefficient (k_p ~ 0.549) and mechanical quality factor (Q_m ~ 125). Perfect temperature stability of piezoelectric and electromechanical properties was also remained below Curie temperature.

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添加BiFeO3低温烧结PIN-PSN-PT陶瓷的电学性能

采用两步烧结法制备了添加BiFeO3的0.105PIN-0.465PSN-0.43PT （PIN-PSN-PT）三元陶瓷。研究了BiFeO3对PIN-PSN-PT陶瓷电学性能和温度稳定性的影响。添加BiFeO3后，PIN-PSN-PT陶瓷的烧结温度从1250℃显著降低到900℃。采用BiFeO3陶瓷制备的PIN-PSN-PT陶瓷在900℃低温下可获得致密的微观结构。少量BiFeO3的加入可以提高相变温度和压电性能。在居里温度（Tc ~ 290℃）、压电常数（d33 ~ 465 pC/N）、矫顽力场（Ec ~ 11.41 kV/cm）、平面机电耦合系数（kp ~ 0.549）和机械品质因子（Qm ~ 125）的情况下，PIN-PSN-PT-0.1wt%BiFeO3陶瓷获得了最佳的综合电学性能。在居里温度下，压电和机电性能也保持良好的温度稳定性。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.