Journal of Materials Science: Materials in Electronics最新文献

{"title":"Scalable growth and transfer of large-area MoS2 film on IDE structures for photo-detector application","authors":"Ajay Kumar,&nbsp;Prashant Kumar,&nbsp;Radhapiyari Laishram,&nbsp;Shivnath Kumar,&nbsp;J. S. Rawat,&nbsp;Amit Jain","doi":"10.1007/s10854-025-14697-z","DOIUrl":"10.1007/s10854-025-14697-z","url":null,"abstract":"<div><p>A large-area centimeter-scale (2 cm × 1 cm) high-quality continuous MoS₂ film was grown on a SiO₂/Si substrate via the Chemical Vapor Deposition (CVD) technique to ensure the scalability and uniformity of the MoS₂ film across a large area, rendering it suitable for wafer-scale applications. We further establish the transfer of MoS₂ film from the grown substrate (SiO₂/Si) to Interdigitated Electrodes (IDE) structures fabricated on GaAs substrate via a wet etching process utilizing Hydrogen Fluoride (HF) solution, effectively removing the MoS₂ layer from SiO₂/Si substrate within 2–3 min, while preserving the structural integrity and quality of the MoS₂ film. Characterization studies involving Raman analysis, Photoluminescence (PL) mapping, SEM imaging, and optoelectronics measurements confirm the high quality and integrity of the transferred MoS₂ film onto IDE structures fabricated on GaAs substrate for photodetection application. Optoelectronic measurements revealed a significant responsivity enhancement from 2.13 to 26.4 mA/W at a 20 V bias under 780 nm laser illuminations (5 mW), due to the incorporation of gold nanoparticles between the IDE fingers by employing RF sputtering. Thus, integrating nanoparticles in the active region of optoelectronic devices can markedly enhance the optical efficiency of 2D material-based optoelectronic systems. Overall, this CVD technique presents a viable approach for the scalable production of large-area MoS₂ films and their transfer onto fabricated structures, opening avenues for the integration of MoS₂ films into advanced technological devices and systems, particularly in micro and Nano-electromechanical systems.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation on electrochemical sensing behavior of hydrogen peroxide using tin dioxide (SnO2) nanoparticles","authors":"S. S. Beenaben,&nbsp;Radha Sankararajan,&nbsp;Mythili Kumaresan","doi":"10.1007/s10854-025-14754-7","DOIUrl":"10.1007/s10854-025-14754-7","url":null,"abstract":"<div><p>Hydrogen peroxide (H₂O₂) plays a vital role in various aspects of daily life, such as food, health, and the environment. Foods containing excessive quantities of H₂O₂ residue may have harmful impacts on human health. In this work, tin dioxide nanoparticles (SnO₂NPs) were synthesized by a hydrothermal method and subsequently characterized using an X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Field emission scanning electron microscope (FESEM), and Energy-dispersive X-ray analysis (EDAX). An electrochemical sensor for analyzing hydrogen peroxide (H₂O₂) was developed by immobilizing tin dioxide nanoparticles onto a graphite electrode (SnO₂/GE). The electrocatalytic behavior of the developed electrochemical sensor was studied using cyclic voltammetry (CV) and differential pulse voltammetry (DPV). The results indicated that the SnO₂/GE exhibits notable electrocatalytic oxidation and reduction capabilities for detecting and quantifying H₂O₂. The DPV technique determined parameters included linear range of 1–5 μM, a detection limit is 0.196 μM, and a qualification limit is 2.38 μM for the reduction peak with correlation coefficient <i>R</i>² is 0.98. The stability of the sensor is measured for five days and has 98.7% of stability. The highest current is measured at pH 7. The developed sensor was successfully used to detect trace levels of H₂O₂.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Anand-type constitutive model to predict the deformation behavior of Sn3.0Ag0.5Cu under different temperature and strain rates","authors":"Xuexia Yang,&nbsp;Yijie Du,&nbsp;Zhaoyun Liu,&nbsp;Shuai Shi,&nbsp;Chao Chang","doi":"10.1007/s10854-025-14762-7","DOIUrl":"10.1007/s10854-025-14762-7","url":null,"abstract":"<div><p>This study investigates the compressive mechanical behavior of Sn3.0Ag0.5Cu (SAC305) lead-free solder under varying temperature and strain rate conditions. Compression tests were performed using an electronic universal testing machine across four distinct temperatures (20 °C, 60 °C, 100 °C, and 140 °C) and five different strain rates(<span>(1times {10}^{-3}{s}^{-1})</span>,<span>(5times {10}^{-4}{s}^{-1})</span>, <span>(2times {10}^{-4}{s}^{-1})</span>,<span>(8times {10}^{-5}{s}^{-1})</span>, <span>(5times {10}^{-5}{s}^{-1})</span>) Stress–strain curve of SAC305 obtained by constant temperature compression test. The Anand viscoplastic model was applied to fit the experimental data, analyzing temperature and strain rate effects on the mechanical properties of material. The results demonstrate that SAC305 exhibits strong dependence on both temperature and strain rate. Specifically, yield stress decreases with an increase in temperature, while it increases with higher strain rates. Notably, the temperature effect is more pronounced than the strain rate effect. Moreover, the Anand viscoplastic model, when fitted to the experimental data, shows excellent agreement with the observed stress–strain behavior, confirming its suitability for predicting the mechanical response of SAC305 solder under diverse thermal and strain rate conditions. These findings provide a theoretical foundation for subsequent simulation studies on the thermal-vibration coupling performance of SAC305 lead-free solder joints.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Luminescence improvement of Ce3+-doped Lu2CaMg2Si3O12 orange phosphor for WLED based on Ca vacancy","authors":"Yingkai Fu,&nbsp;Yubo Feng,&nbsp;Kaiyang Li,&nbsp;Yuhan Yan,&nbsp;Runtao Chen,&nbsp;Yuwen Peng,&nbsp;Weijie Li,&nbsp;Yang Zheng,&nbsp;Xu Qian,&nbsp;Jianying Ding,&nbsp;Quan Liu","doi":"10.1007/s10854-025-14758-3","DOIUrl":"10.1007/s10854-025-14758-3","url":null,"abstract":"<div><p>Phosphors for white light emitting diode (WLED) have kept catching the researchers’ attention. Herein, Ce³⁺-activated garnet Lu₂CaMg₂Si₃O₁₂ orange phosphor was synthesized and Ca content was decreased to create Ca vacancy into the lattice to further improve the luminescence properties. XRD patterns and Rietveld refinement were executed to investigate the effect of Ca vacancy on the lattice structure. The synthesized phosphors exhibited broad excitation band in blue region and broad emission band ranging from 530 to 750 nm. Via creating Ca vacancy into the lattice both the emission and the thermal stability of Ce³⁺-doped Lu₂CaMg₂Si₃O₁₂ were improved. Quantum efficiency of the optimized sample Lu₂Ce_0.06Ca_0.95Mg₂Si₃O₁₂ reaches 84.7%. Optimized Lu_1.94Ce_0.06Ca_0.95Mg₂Si₃O₁₂ was mixed with the cyan phosphor Ca₃Sc₂Si₃O₁₂:Ce³⁺ and spread on the blue chip to fabricate WLED device, showing high color rendering index 86.6 and correlated color temperature 4404 K. This work provides a simple strategy to improve the luminescence property of Lu₂CaMg₂Si₃O₁₂:Ce³⁺ and a thermally stable orange phosphor for WLED.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A microrod-based photoconductivity enhancement in copper antimony selenide PIN photodetector","authors":"M. Irshad Ahamed,&nbsp;M. Suganthi Priya,&nbsp;Salahaldeen Duraibi,&nbsp;Saahira Banu Ahamed","doi":"10.1007/s10854-025-14772-5","DOIUrl":"10.1007/s10854-025-14772-5","url":null,"abstract":"<div><p>A P-type semiconductor namely CuSbSe₂ developed in the recent times has acquired a lot of attention because of its low cost promising optoelectronic features and widely abundant precursor elements. This study explores CuSbSe₂ photodetector based on a microrod designed with the help of simple separation approach from crystals which have 150–300 μm thickness. In comparison to thin film-based device (D1), microrod-based device (D2) performs more efficiently as it is more responsive and operates in a self-bias manner. D2 displayed an enhanced responsivity with a value of 0.27 A/W with 31% of EQE (External Quantum Efficiency) at 1064 nm wavelength and 15 mW/cm² power density. Moreover 532 nm, 0.038 A/W responsivity with 9% EQE was achieved by D2 under 32 mW/cm². The time taken by D2 to respond or recover at 1064 nm was 68.7 and 35.1 ms and at 532 nm was 15.7 and 41.2 ms. This operation is self-powered and is implemented at 0.02 V which is a lower value of bias. The findings of this research will be reveal that microrods of CuSbSe₂ offer significantly enhanced performance and responds at a faster pace with higher sensitivity. The above properties find them apt for low cost, self-powered optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic field oriented nanocellullose-based composite for human motion monitoring","authors":"Arsenii Naidonov,&nbsp;Viktoriia Koval,&nbsp;Valerii Barbash,&nbsp;Mykhailo Dusheiko","doi":"10.1007/s10854-025-14752-9","DOIUrl":"10.1007/s10854-025-14752-9","url":null,"abstract":"<div><p>Conductive composites based on nanocellulose, polyvinyl alcohol, and iron, oriented by a magnetic field (Fe-NC-PVA), were fabricated. The study examined the surface morphology, chemical composition, mechanical, and electrical properties of the composites depending on the iron content. It was found that in terms of mechanical strength and electrical resistance, the recommended iron content in the composite varies from 0.13 to 0.25 g. Biodegradable planar bending sensors were made from this material that are characterized by the following parameters: gauge factor – 2–3, reversibility – 98–99%, time drift – 0.01–0.02%/min, complete biodegradation time of sensitive element in soil – 5 months. The obtained sensors were successfully used to study human motor activity (movements of the upper and lower limbs, finger touch, squatting, walking, etc.).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure and optical properties of CdTe thin films obtained via discrete vacuum thermal evaporation","authors":"M. S. Tivanov,&nbsp;V. A. Gevorgyan,&nbsp;A. A. Zgliui,&nbsp;K. P. Haroyan,&nbsp;V. F. Gremenok,&nbsp;D. V. Zhyhulin,&nbsp;M. Dong,&nbsp;M. Khalid Hossain,&nbsp;M. I. Sayyed,&nbsp;T. I. Zubar,&nbsp;D. I. Tishkevich,&nbsp;A. V. Trukhanov","doi":"10.1007/s10854-025-14769-0","DOIUrl":"10.1007/s10854-025-14769-0","url":null,"abstract":"<div><p>CdTe films were obtained via discrete vacuum thermal evaporation (DVTE) with CdCl₂ treatment and annealing in an air atmosphere. The CdTe samples were investigated using several techniques: energy-dispersive X-ray spectroscopy, scanning electron microscopy, atomic-force microscopy, grazing incidence X-ray diffraction, and Raman analysis. It has been observed that the samples of CdTe films have a cubic structure with predominant orientation (111), a smooth surface without pores or cracks, and the stoichiometric Cd/Te ratio approaches 1. The band gap width is 1.51 eV, and the Urbach energy is in the range of 13–25 meV, increasing for CdTe thin films synthesized with CdCl₂. It has been shown that films based on CdTe fabricated via DVTE with CdCl₂ treatment and annealing in an air atmosphere at 400 °C predominantly crystallize in the cubic structure of CdTe, have good structural and topographic parameters, are low defectless, have an optimal band gap value, and can be applied as a perspective material for high-efficiency solar cell creation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved densification, cubic phase stability and ionic conductivity of Ga/Mo co-doped Li7La3Zr2O12 electrolytes suppressed abnormal grain growth","authors":"Rui Mei,&nbsp;Feng Yan,&nbsp;Sizheng Hu,&nbsp;Zonggui Gong,&nbsp;Haoxuan Guo,&nbsp;Qijing Wang,&nbsp;Xinghua Zheng","doi":"10.1007/s10854-025-14749-4","DOIUrl":"10.1007/s10854-025-14749-4","url":null,"abstract":"<div><p>With the increasingly urgent safety requirement of lithium-ion batteries, more and more attention has been paid to Li₇La₃Zr₂O₁₂ (LLZO)-based solid electrolytes with high ion conductivity and excellent electrochemical performance. Unfortunately, owing to the serious “Li-loss” and the abnormal grain growth (AGG) during the long-time high-temperature sintering process, it is difficult to achieve the high-quality LLZO electrolyte with uniform and fine grains, high density and excellent electrochemical performance. In this work, Ga/Mo co-doped LLZO solid-state electrolytes have been prepared by traditional sintering (TS) and two-step sintering (TSS). And the sintering mechanism, phase stability, microstructure evolution, and electrochemical performance have been systematically investigated. A small amount of Ga/Mo doping not only promotes the formation of the cubic garnet LLZO phase, but also enhances the stability of cubic phase. High density of 92.3% and uniform microstructure without AGG have been achieved via a small amount of Ga doping and TSS. Li_6.3Ga_0.1La₃Zr_1.8Mo_0.2O₁₂ electrolytes, prepared by TSS of 1200 °C/15 min-1100 °C/8 h, exhibits high ion conductivity of 2.59 × 10^–4 S·cm⁻¹ and critical current density (CCD) value of 0.5 mA·cm⁻², low electric conductivities of 4.77 × 10^–9 S·cm⁻¹, which suggests it is a potential electrolyte to apply in all-solid-state batteries.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-melting and thermal-conducting Sn-Bi-Ag solder enhanced with SnO2 nanoparticles for reliable mini-LED microsystems","authors":"Jiwan Kang,&nbsp;Ashutosh Sharma,&nbsp;Jae Pil Jung","doi":"10.1007/s10854-025-14658-6","DOIUrl":"10.1007/s10854-025-14658-6","url":null,"abstract":"<div><p>In this work, low-temperature Sn-57.6wt%Bi-0.4wt%Ag (Sn-Bi-Ag) solder alloy was enhanced with SnO₂ nanoparticles (NPs, 0 to 0.7wt%) using low energy milling and melting process. The developed solders were reflowed to join Cu/Ni pad of 1608 mini-light emitting diode (LED) chips at 238 °C. The morphology, melting temperature, thermal conductivity, and electrical properties of the developed alloys were evaluated. The findings revealed a depression in melting point of Sn-Bi-Ag/SnO₂ solder by 1.1 °C compared to the pristine Sn-Bi-Ag alloy. Microstructural analysis indicated a refinement in the β-Sn and Bi-rich phase in Sn-Bi-Ag alloy after the addition of SnO₂ NPs (≈0.5wt%), accompanied by a decrease in β-Sn area fraction (0.49) with a mild increase in Bi-rich area (0.46). Additionally, the thermal diffusivity and conductivity were significantly enhanced, with the values of 13.2 mm²/s and 14.2 J/K/g all of which outperformed the Sn -Bi -Ag alloy. The electrical resistivity of the developed samples was in the range of 5.0 × 10^–7 to 3 × 10^–7 Ω.cm. To further assess solder joint reliability, the SnO₂ NPs-modified solder was applied to a 1608 mini-LED chip and bonded onto the Cu/Ni pad of a fiber glass reinforced printed circuit board (FR4-PCB). The solder joint characteristics was evaluated by shear strength tests by examining the post fractured joint morphology of the specimens. The shear tests showed an increasing trend with the fraction of SnO₂ NPs in the Sn-Bi-Ag matrix. The shear strength was improved by ≈10–11%, respectively, over Sn-Bi-Ag alloy. The fracture morphology revealed a mixed ductile and brittle fracture at 0.5wt.%SnO₂ NPs in the matrix while brittle fracture dominates at a higher fraction of SnO₂ NPs (0.7wt.%) is added to the matrix alloy. It is inferred from this investigation that an optimum amount of 0.5wt.% is desired for realizing high thermal conductivity, low-melting, and reliable solder joints in future microelectronics mini-LED packaging.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of dextrose monohydrate capping agent on the magnetic properties of nickel-zinc antimony nanoferrite","authors":"L. W. El Khatib,&nbsp;A. M. Abdallah,&nbsp;M. Noun,&nbsp;Nour El Ghouch,&nbsp;G. O. Younes,&nbsp;R. Awad","doi":"10.1007/s10854-025-14763-6","DOIUrl":"10.1007/s10854-025-14763-6","url":null,"abstract":"<div><p> Ni_0.6Zn_0.2Sb_0.2Fe₂O₄ capped with different concentrations of dextrose monohydrate (0–0.35 M) was synthesized using the co-precipitation method. The structural properties and the purity of Ni_0.6Zn_0.2Sb_0.2Fe₂O₄ were determined using X-ray powder diffraction. Two phases were obtained, a major phase assuring the formation of Ni_0.6Zn_0.2Sb_0.2Fe₂O₄ and a minor phase indicating the formation of hematite (α-Fe₂O₃). The addition of a capping agent caused an increase in the major phase percentage and a decrease in the minor phase percentage with the D35 sample (0.35 M) having the highest Ni_0.6Zn_0.2Sb_0.2Fe₂O₄ percentage (99.48%) and the lowest hematite percentage (0.52%). The transmission electron microscopy analysis showed that Ni_0.6Zn_0.2Sb_0.2Fe₂O₄ has a spherical shape and a particle size between 15.258 and 16.773 nm. The selected area electron diffraction confirmed the polycrystalline nature of Ni_0.6Zn_0.2Sb_0.2Fe₂O₄ in concentric rings. Energy-dispersive X-ray analysis proved the purity of Ni_0.6Zn_0.2Sb_0.2Fe₂O₄ and the atomic percentage obtained was compatible with the theoretical one. X-ray photoelectron spectroscopy tested the oxidation state (Ni²⁺, Zn²⁺, Sb³⁺, Fe³⁺, and O²⁻) and the elemental composition of the synthesized nanoparticles. Fourier transform infrared spectroscopy confirmed the formation of the spinel structure through the presence of tetrahedral and octahedral metal–oxygen bonds. Raman spectroscopic analysis investigated the presence of two A_1g and two F_2g modes. The increase in particle size accompanied a rise in ferromagnetic phase contribution and a decrease in superparamagnetic phase contribution as investigated by the vibrating sample magnetometer. Moreover, the D20 sample (0.2 M) registered the highest saturation magnetization value of 40.813 emu.g⁻¹.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}