Journal of Materials Science: Materials in Electronics最新文献

{"title":"Exploring thermoelectric properties of hydrothermally synthesized Ag-doped SnS material","authors":"Sanju Choudhari,&nbsp;Dinesh Kumar Kedia,&nbsp;Manisha Yadav,&nbsp;Pradeep kumar,&nbsp;Pura Ram","doi":"10.1007/s10854-025-15761-4","DOIUrl":"10.1007/s10854-025-15761-4","url":null,"abstract":"<div><p>In recent years, tin sulfide (SnS), a layered chalcogenide material, has attracted considerable interest for its low toxicity, earth abundance, and promising thermoelectric (TE) properties. In this study, polycrystalline SnS samples—both undoped and Ag (2 at% and 4 at%)-doped were synthesized via a cost-effective and time-efficient hydrothermal method aimed at enhancing TE performance via nanostructuring and grain boundary scattering. X-ray diffraction (XRD) confirmed the phase purity, while Field Emission Scanning Electron Microscopy (FESEM) revealed sheet-like morphologies, and Energy-Dispersive X-ray (EDX) spectroscopy confirmed the elemental composition of the sample. UV–Vis spectroscopy indicated a reduced band gap of 1.28 eV for the 4 at% Ag-doped SnS, suggesting enhanced electronic properties. Fourier Transform Infrared (FTIR) spectroscopy identified the chemical bonds and functional groups present, and Thermogravimetric analysis (TGA) confirmed thermal stability up to 600 °C. Notably, undoped SnS exhibited the lowest thermal conductivity (0.18 W·m⁻¹·K⁻1 at 620 K), while Ag-doped samples showed slightly higher values due to increased carrier concentration (n) from hole doping. Electrical conductivity significantly improved after Ag doping, reaching 45.34 S/m at 620 K. However, the Seebeck coefficient values decreased for Ag-doped samples in comparison to undoped SnS due to the increase in n. To the best of our knowledge, the measured thermal conductivities are the lowest reported for doped SnS at this temperature. Our study presents that the hydrothermal method for synthesis is an effective and scalable approach for synthesizing SnS-based thermoelectric materials with ultralow thermal conductivity, making it a viable alternative to more expensive and complex fabrication techniques.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancing solar cell efficiency: insights from cesium lead halide perovskite analysis","authors":"M. El-Mrabet,&nbsp;A. Bouich,&nbsp;A. Tarbi,&nbsp;T. Chtouki,&nbsp;H. Erguig,&nbsp;A. Zawadzka,&nbsp;A. Marjanowska,&nbsp;A. Migalska-zalas,&nbsp;A. Kityk,&nbsp;A. Andrushchak,&nbsp;G. Myronchuk,&nbsp;B. Sahraoui","doi":"10.1007/s10854-025-15827-3","DOIUrl":"10.1007/s10854-025-15827-3","url":null,"abstract":"<div><p>In this study, we investigated the performance of cesium lead halide perovskite solar cells through numerical simulations using a Solar Cell Capacitance Simulator (SCAPS). Three cell configurations are proposed: Yb/ZnO/CsPbI₃/CuI/Au, Sm/TiO₂/CsPbBr₃/CuO₂/Au, and Yb/TiO₂/CsPbCl₃/CuO₂/Au. The solar cell was optimized by adjusting parameters such as the active layer thickness, hole transport layer (HTL), electron transport layer (ETL), metal work function (WF), defects, doping levels, series resistance (R_S), and shunt resistance (R_Sh). These studies indicate that photovoltaic performance is strongly influenced by critical factors, including the quality of the ETL and HTL layers, metal work function, series and shunt resistances, defect density, as well as the thickness and doping concentration of the absorber layers. The efficiencies of CsPbX₃ (X = I, Br, and Cl)-based perovskite solar cells were 26.68%, 16.76%, and 14.97%, respectively. The cells based on CsPbCl₃ and CsPbBr₃ exhibited superior stability, while the external quantum efficiency (EQE) measurements revealed that the CsPbI₃ cell responded across the entire visible and near-infrared spectrum, indicating its higher potential for photovoltaic applications compared to CsPbBr₃ and CsPbCl₃. In conclusion, we found that for diffusion lengths (L) greater than ~ 600 nm, the reduction in the internal electric field in CsPbBr₃ and CsPbCl₃ cells promotes electron–hole recombination within the core layers.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication and structural analysis of amorphous GeTe4, Sb2Te3 and Ge20SbxTe80-x thin films prepared by thermal evaporation","authors":"S. N. Garibova,&nbsp;A. I. Isayev,&nbsp;I. A. Mamedova,&nbsp;M. E. Aliyev,&nbsp;F. Sarcan","doi":"10.1007/s10854-025-15776-x","DOIUrl":"10.1007/s10854-025-15776-x","url":null,"abstract":"<div><p>Amorphous Ge₂₀Te₈₀, Sb₄₀Te₆₀, and Ge₂₀Sb_xTe_80-x (x = 1, 2, 5, 10) compounds were synthesized and deposited as thin films (40–80 nm) on glass substrates via thermal evaporation under high vacuum (10^–5 Torr). Their structural characteristics were examined using X-ray diffraction, scanning electron microscopy, and atomic-force microscopy. Applying the void–cluster model, the quasi-period of density fluctuations (r), correlation length (L), and packing fraction (L/r) were estimated from the first sharp diffraction peak in the XRD patterns. Partial substitution of Te by Sb in Ge₂₀Te₈₀ led to a reduction in L and L/r, indicating increase in structural disorder. Raman spectroscopy revealed vibrational modes associated with short-range ordering in Ge₂₀Te₈₀ and Sb₄₀Te₆₀, aiding interpretation of Ge₂₀SbₓTe₈₀₋ₓ films. In Ge₂₀Te₈₀, dominant Raman peaks at 121.5 and 139 cm⁻¹ were assigned to GeTe₄₋_nGe_n (<i>n</i> = 0, 1) tetrahedra, while bands at 154–159 cm⁻¹ and 174–177 cm⁻¹ corresponded to Te chains and defective octahedral units. For Sb₄₀Te₆₀ films, peaks at 124.5 and 142 cm⁻¹ were attributed to Sb–Te vibrations in pyramidal SbTe₃ units and distorted octahedral Sb coordination. Additional peaks at 97 and 152 cm⁻¹ were associated with Te–Te bonds, while the band at 113.5 cm⁻¹ corresponds to Sb–Te stretching modes. The Raman intensity at 121.5, 139 and 157 cm⁻¹ in Ge₂₀Sb_xTe_80-x exhibits a non-monotonic dependence on Sb concentration, reaching a maximum at x = 2. A low- frequency boson peak (&lt; 100 cm⁻¹) observed in Sb₄₀Te₆₀ suggests a high density of low-energy vibrational states, characteristic of disordered structure.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quinoline based dual fluorescence chemosensor for the detection of Zn2+ and Cd2+ ions","authors":"Pitchai Marimuthu,&nbsp;Thamilselvan Annadurai,&nbsp;Akhil Pradiprao Khedulkar,&nbsp;Rushikesh G. Bobade,&nbsp;Moon Il Kim,&nbsp;Revanappa C. Ambare,&nbsp;Andy Ramu","doi":"10.1007/s10854-025-15793-w","DOIUrl":"10.1007/s10854-025-15793-w","url":null,"abstract":"<div><p>A fluorescent chemosensor, employing quinoline (8-HQC-2PA), has been devised for the dual-channel detection of biologically significant metal ions (Zn²⁺ and Cd²⁺) in aqueous environments. The sensing of Zn²⁺ is accomplished through a fluorogenic \"turn-on\" mechanism, while selective binding with Cd²⁺ ions induces a noticeable red-shift in the probe’s intensity. Density functional theory (DFT) analysis affirms that the molecular energy levels and electron transitions of 8-HQC-2PA are significantly affected by the introduction of metal ions, resulting in spectral changes that facilitate the differentiation of Zn²⁺ and Cd²⁺. Moreover, 8-HQC-2PA exhibits high selectivity for Zn²⁺ and Cd²⁺ over other coexisting metal ions, achieving limits of detection (LOD) of 3.8 × 10^–8 M and 3.7 × 10⁻⁹ M, respectively. These findings offer a facile and efficient method for selectively discerning trace amounts of Zn²⁺ and Cd²⁺ ions in biological studies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermally activated conduction and dielectric relaxation in the quasi-one-dimensional hybrid perovskite NH2(CH3)2CuCl3","authors":"A. Jebnouni,&nbsp;K. Karoui,&nbsp;A. F. Alshammari,&nbsp;A. S. Aljaloud,&nbsp;M. A. Alshammari,&nbsp;M. Bouzidi,&nbsp;A. Ben Rhaiem,&nbsp;M. Ben bechir","doi":"10.1007/s10854-025-15833-5","DOIUrl":"10.1007/s10854-025-15833-5","url":null,"abstract":"<div><p>Organic–inorganic hybrid perovskite materials have attracted significant attention due to their unique structural versatility and promising optoelectronic properties. In this work, we present a detailed investigation of the structural, thermal, optical, and electrical characteristics of NH₂(CH₃)₂CuCl₃. Powder X-ray diffraction confirms the formation of a well-ordered monoclinic phase featuring one-dimensional <span>({left[{Cu}_{2}{Cl}_{6}right]}^{4-})</span> dimer chains linked by organic cations, which give rise to pronounced anisotropy. Thermal analysis reveals a sharp triclinic-to-monoclinic phase transition near 287 K and thermal stability up to ~ 475 K (based on a 5% weight loss criterion). Optical absorption measurements identify a direct bandgap of 2.26 eV and a significant Urbach energy of 0.829 eV, reflecting lattice disorder and strong exciton–phonon coupling<b>.</b> Impedance spectroscopy and dielectric studies highlight thermally activated charge transport with non-Debye relaxation behavior, strongly influenced by the structural phase transition. AC conductivity analysis shows anomalous frequency exponents, pointing to complex conduction mechanisms that include dielectric relaxation, polaron hopping, and interfacial polarization. These results demonstrate the crucial interplay between structure and dynamics in NH₂(CH₃)₂CuCl₃, underlining its potential for advanced optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dependence of optoelectronic properties of IGZO thin films deposited by RF magnetron sputtering on initial vacuum pressure","authors":"Shuai Yuan,&nbsp;Wei Zhang,&nbsp;Shumin Yang","doi":"10.1007/s10854-025-15780-1","DOIUrl":"10.1007/s10854-025-15780-1","url":null,"abstract":"<div><p>The structures and characteristics of Indium-Gallium-Zinc-Oxide(IGZO) transparent semiconducting films prepared by magnetron sputtering can be influenced by various factors. However, the role of the initial vacuum pressure is seldom investigated, especially on the photoelectric properties of amorphous IGZO films (α-IGZO films). Herein, high-quality, transparent conductive α-IGZO films were deposited by radio frequency (RF) magnetron sputtering at 200 ℃ under various initial vacuum pressures ranging from 1 × 10^–6 to 10 × 10^–6 Torr. The results revealed that increasing the initial vacuum pressure gradually enhanced the root-mean-square roughness of the films and the formation of columnar structures. At lower vacuum pressures, the carrier mobility and concentration increased due to the enhanced number of oxygen vacancies, resulting in reduced film resistivity. The lowest resistivity of 1.6 × 10^–3 Ω·cm was obtained at an initial vacuum pressure of 1 × 10^–6 Torr, with an average transmittance of 92.11%. Further decrease in the initial vacuum pressure improved the quality factor of α-IGZO films, with all prepared films showing transmittance values exceeding 90% in the visible range. Overall, vacuum pressure significantly affects the structures and photoelectric properties of α-IGZO films, deserving further exploration for the advanced preparation of α-IGZO films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of Sc2O3/SiO2/SiC MOS capacitors: role of annealing temperature on microstructural and electrical properties","authors":"D. Nziengui,&nbsp;Ş. Kaya,&nbsp;R. Terzioğlu,&nbsp;C. Terzioğlu","doi":"10.1007/s10854-025-15837-1","DOIUrl":"10.1007/s10854-025-15837-1","url":null,"abstract":"<div><p>This study investigates the structural and electrical properties of Al/(Sc₂O₃/SiO₂/4H-SiC)/Ag MOS capacitors, focusing on the effects of the annealing temperature on the performance metrics. Sc₂O₃ films were deposited via electron beam deposition, while SiO₂ was grown through dry oxidation. The optimal annealing temperature was determined, alongside an analysis of the SiO₂ interfacial layer’s effect on the capacitors’ characteristics. Key findings reveal that increased annealing temperatures enhance the capacitance–voltage (C-V) and conductance-voltage (G-V) measurements. Specifically, capacitance (C_c) and conductance (G_c) significantly improved for the S-800 sample, reflecting enhanced interface quality and effective oxide state density (N_eff), which increased with temperature, peaking at 800 °C. Crystallite sizes varied from 249 Å to 309 Å, with lattice parameters and dislocation density exhibiting trends reflective of temperature increases, although anomalies were observed at 1000 °C. While series resistance (R_s) displayed no clear trend, the interface density of states (D_it) decreased, and parameters such as donor concentration (N_D), breakdown electric field maximum (E_m), and barrier height (φᵦ) diminished with higher annealing temperatures. Overall, the findings underscore annealing as a critical factor for optimizing MOS capacitor functionality, highlighting a balance between structural improvements and electrical performance metrics.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carbon dots synthesized from citric acid, urea, and N-Methyl-2-pyrrolidone system for feasible applications in photoluminescence and electroluminescence","authors":"Bingyu Wang,&nbsp;Jiaqing Liu,&nbsp;Zhenchang Tang,&nbsp;Yi Wang,&nbsp;Jia Yuan,&nbsp;Yingling Xiao,&nbsp;Junfeng Liang,&nbsp;Honghang Wang,&nbsp;Liming Liu,&nbsp;Xiaowen Zhang","doi":"10.1007/s10854-025-15834-4","DOIUrl":"10.1007/s10854-025-15834-4","url":null,"abstract":"<div><p>Fantastic carbon dots (CDs) with solution-processing, eco-friendliness, and scalable manufacturing receive giant attention in luminescence. Herein, we demonstrate solution-processed CDs synthesized from citric acid, urea, and N-Methyl-2-pyrrolidone system with a microwave-assisted method. It offers rapid synthesis (&lt; 10 min), good dispersibility, acceptable quantum yield (27.8%), graphitic carbon core, and uniform particle size. With CDs-doped polyvinylpyrrolidone as a composite fluorescent layer, the 365-, 395-, 410-, and 460-nm excitation gives strong photoluminescence and large full width at half maximum (~ 150 nm). The 460-nm excited LED gives 480,812 cd m⁻² luminance and 43.0 lm W⁻¹ power efficiency, which are superior to the counterparts. With CDs-doped poly(N-vinyl carbazole) (PVK) as an emitter, the electroluminescent LED achieves a maximum luminance of 866 cd m⁻² and voltage-dependent color tunability from violet emission of PVK at low voltages to near white emission of CDs, PVK, and the PVK/CDs interface at high voltages. This work highlights potential CDs synthesis with efficient and wide emission, opening up novel approaches for assembling high-performance photoluminescent and electroluminescent LEDs.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145169027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quadruple-layer antireflection coating for high-efficiency IMM3J solar cells by GLAD","authors":"Jiwen Li,&nbsp;He Wang,&nbsp;Shuyi Mo,&nbsp;Fei Long","doi":"10.1007/s10854-025-15820-w","DOIUrl":"10.1007/s10854-025-15820-w","url":null,"abstract":"<div><p>A quasi-gradient refractive index quadruple-layer antireflection coating (QLARC) nano-MgF₂/ZnS/MgF₂/ZnS was designed for inverted metamorphic triple junction (IMM3J) solar cells, with optimization and simulation using the Essential Macleod. The top layer nanoporous MgF₂ (nano-MgF₂) film was fabricated utilizing the glancing angle deposition (GLAD) technique, achieving tailored refractive indices from 1.39 to 1.20 through controlling deposition angle (<i>θ</i>_<i>α</i> = 24°-89°). The photovoltaic performance of quasi-gradient QLARC was compared with that of a conventional double-layer antireflection coating (DLARC). Both DLARC and QLARC reduced the solar spectrum-weighted average reflectance (SSWAR) of IMM3J solar cells by 23.46% and 25.45%, respectively, in the wavelength range of 300–1300 nm. By reducing optical loss, both DLARC and QLARC enhanced the external quantum efficiency (EQE) of IMM3J solar cells, thus increasing the short-circuit current (J_sc) by 29.4% and 32.9%, respectively, compared to uncoated solar cells (AM0, 1-sun). The IMM3J solar cell with QLARC achieves a power conversion efficiency (PCE) of 31.8%, which is higher than that of the cells without ARC (23.7%) and with DLARC (30.6%). In comparison with DLARC, the nano-MgF₂/ZnS/MgF₂/ZnS demonstrated better broadband antireflection properties and enhanced electrical performance in IMM3J solar cells, as confirmed by simulation and experiment.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145169028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the interface interaction between the chip backside metallization and solder alloys of power semiconductor modules","authors":"Shilin Zhao,&nbsp;Erxian Yao,&nbsp;Chunbiao Wang,&nbsp;Yan Tong","doi":"10.1007/s10854-025-15818-4","DOIUrl":"10.1007/s10854-025-15818-4","url":null,"abstract":"<div><p>Power semiconductor modules are the core device of the electrical power conversion system, whose chip-solder interface is one of the weak points that can cause module failure, requiring an in-depth investigation. In this work, the effect of chip backside metallization (BSM), solder alloy, and solder condition on the interface reaction during reflow soldering was investigated. The interface bonding performance was further evaluated via accelerated aging tests like HTS (High temperature storage) and HTRB (High humidity, high temperature reverse biased). Results show that when the chip BSM of the Al–Ti–Ni–Ag reacted with Sn-based solders, it formed (Cu, Ni)₆Sn₅ intermetallic compound (IMC) with the SAC305 solder, whereas with SnSb5, it probably yielded (Cu, Ni)₆(Sn, Sb)₅. An overly thin initial Ni layer of chip BSM became depleted during the reaction, resulting in a discontinuous interface IMC layer and the dewetting between the Ti layer and IMCs. This discontinuity is more pronounced when SnSb5 solder is employed. A thicker Ni layer can ensure a continuous interface IMC layer and a higher interface bonding strength, though it leads to more interface Kirkendall voids. Increasing solder temperature and time can promote IMCs to dissolve into the solder melt, resulting in the IMC layer drifting into the solder interior. The HTS test can facilitate IMC growth and decrease interface strength, without accompanying IMC phase transformation. Delamination occurred at the interface employed the thin initial Ni layer during the HTRB test, evidencing that the inappropriate chip BSM-solder matching reduces interface reliability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145110461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}