Journal of Materials Science: Materials in Electronics最新文献

{"title":"Dielectric and electrical enhancement of niobium pentoxide and vanadium pentoxide scattered in Poly-vinyl alcohol for electrical applications","authors":"Amani Saleh Almuslem","doi":"10.1007/s10854-025-14576-7","DOIUrl":"10.1007/s10854-025-14576-7","url":null,"abstract":"<div><p>The investigation focuses on polymeric nanocomposites based on PVA doped with niobium oxide (Nb₂O₅) and vanadium pentoxide (V₂O₅). The structure of the fabricated nanocomposites was examined via various methods. Morphological analysis revealed that the average particle size of Nb₂O₅ in PVA-Nb₂O₅ is approximately 110 nm, while in PVA-Nb₂O₅-3%V₂O₅, Nb₂O₅ reaches 103 nm, and V₂O₅ particles are dispersed with an average size of 35 nm. Thermal analysis via TGA demonstrated enhanced stability, with the total weight loss decreasing upon filler insertion. The residual mass increased due to the presence of inorganic oxides, with a final residue of 4.9% for pure PVA and increasing with Nb₂O₅ and V₂O₅ doping. Furthermore, optical studies showed an x-axis shifting absorption edge for PVA, which starts at 3.8 eV and lowers to 2.5 eV for PVA-Nb₂O₅-7%V₂O₅ nanocomposite. The indirect band gap decreases for all nanocomposites, reaching 2.85 eV in PVA-Nb₂O₅-7%V₂O₅ nanocomposite, compared to 5.5 eV in PVA. In contrast, the refractive index registers 1.687 in PVA and increases to 2.075 in PVA-Nb₂O₅-7%V₂O₅ nanocomposite. Moreover, dielectric measurements revealed that the dielectric constant rose to 43 in PVA-Nb₂O₅ nanocomposite but fell from approximately 30 for PVA to less than 20 following doping with V₂O₅. The high relative permittivity of Nb2O5 (100) and V₂O₅ (25) suggests their suitability for advanced dielectric applications. AC resistivity measurements showed an increasing trend with frequency, reaching their highest value at PVA-Nb₂O₅-7%V₂O₅. The optical and dielectric analysis of PVA-Nb₂O₅-V₂O₅ nanocomposites obtained unique behavior in line with earlier studies. Thus, the examined nanocomposites present a potentially useful nano-composite for optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of stable and efficient pluronic based gel polymer electrolyte for indoor application of dye sensitized solar cell","authors":"A. Y. Madkhli","doi":"10.1007/s10854-025-14600-w","DOIUrl":"10.1007/s10854-025-14600-w","url":null,"abstract":"<div><p>To address the critical shortcomings of liquid electrolyte based dye sensitized solar cells (DSSC), quasi-solid and gel polymer electrolytes (GPE) have been investigated as a solution to improve the long-term device stability. Pluronic’s have been scarcely explored for application as electrolyte in DSSC. In the current work, a polymer blend of Pluronic F68 and polyethylene glycol (PEG-400) has been explored for preparation of GPE with iodine redox couple. An effortless combination of the F68 and PEG400 polymer blend resulted in a high conductivity of 12.85 mS·cm⁻¹ with a perfect redox activity of the GPE. The resultant GPE based DSSC gave a photon conversion efficiency (PCE) of 3.9% with a current density of over 5.0 mA·cm⁻² under 50 mW·cm⁻² illumination. Under continuous illumination of 1000 min, the device showed stable potential and current response. In comparison to liquid electrolyte based DSSC, the device was able to retain approximately 90% of its initial PCE after 1000 h of fabrication. Further exploitation of such GPE systems could potentially lead to commercial application of DSSC for indoor applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in polymeric white light-emitting OLEDS for high-efficiency lighting applications","authors":"Ludmila da Silva Candido,&nbsp;Elisa Barbosa de Brito,&nbsp;Daniela Corrêa Santos,&nbsp;Maria de Fátima Vieira Marques","doi":"10.1007/s10854-025-14630-4","DOIUrl":"10.1007/s10854-025-14630-4","url":null,"abstract":"<div><p>White organic light-emitting diodes (WOLEDs) have emerged as a promising alternative to conventional lighting and display technologies, offering advantages such as low power consumption, flexible design, and broad-spectrum emission that closely mimics natural daylight. However, achieving high luminance (≥ 100 lm/W), extended operational lifetimes (≥ 100,000 h), and cost-effective large-scale manufacturing remains a significant challenge. This review examines recent advancements in polymer-based WOLEDs, with a particular focus on semiconductor polymers as next-generation materials for achieving efficient white light emissions. Unlike traditional small-molecule WOLEDs, polymer-based systems offer solution-processable fabrication techniques, such as roll-to-roll printing and inkjet deposition, enabling scalable and cost-effective production. Key innovations discussed include thermally activated delayed fluorescence (TADF) and aggregation-induced emission (AIE) polymers, which enhance efficiency while maintaining spectral stability. Comparative analyses highlight how polymeric architectures can address color instability in multi-emitter systems and synthetic complexity in single-component emitters, positioning them as a more practical alternative for large-area applications. Furthermore, this review bridges the gap between laboratory-scale research and industrial commercialization, outlining strategies to improve charge transport, molecular stability, and device lifetime. Future research directions emphasize scalability, environmentally sustainable fabrication, and integration into next-generation lighting solutions. By evaluating the latest developments and identifying key challenges, this review provides a structured roadmap for advancing WOLED technology from experimental research to real-world applications. The insights presented herein hold global relevance for the advancement of sustainable energy solutions, aligning with international efforts to reduce carbon emissions and transition toward eco-friendly optoelectronic materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Colloidal synthesis of high-quality Cu2MnSnS4 nanocrystals: structural, morphological, and optoelectronic investigation for applications in thin-film solar cells","authors":"Swapnali Walake,&nbsp;Sachin Rondiya,&nbsp;Sandesh Jadkar,&nbsp;Yogesh A. Jadhav","doi":"10.1007/s10854-025-14566-9","DOIUrl":"10.1007/s10854-025-14566-9","url":null,"abstract":"<div><p>Colloidal semiconductor nanocrystal solar cells have been extensively developed in recent years and achieved a power conversion efficiency of ~ 15%. However, cost, toxic constituent elements, and pure-phase materials synthesis are major concerns for large-scale commercialization. Here in this report, we have successfully synthesized pure-phase crystalline Cu₂MnSnS₄ nanocrystals using the hot injection method which is further carefully characterized by various state-of-the-art techniques to investigate its structural, morphological, and optoelectronic properties. The high optical absorption and optimal band gap of 1.1 eV are observed, which is highly suited for solar cell applications. Furthermore, we pioneered the idea of fabricating the Cu₂MnSnS₄ nanocrystal-sensitized solar cell. We achieved a notable power conversion efficiency of 1.1% (~ fourfold higher) with n-CdS buffer layer than w/o n-CdS, 0.3%. The enhanced efficiency is directly attributed to the improved charge transfer and retard charge recombination across the p-Cu₂MnSnS₄/n-CdS interface. So far, to the best of our knowledge, we report the highest power conversion efficiency of 1.1% for Cu₂MnSnS₄ nanocrystals sensitized solar cell and energy band diagram for understanding the mechanism. The results were validated using an energy band diagram constructed using the cyclic voltammetry technique.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14566-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dielectric and microwave absorption properties of Cu@Graphite filled epoxy resin composite coatings","authors":"Xuan Wang,&nbsp;Liang Zhou,&nbsp;Panting He,&nbsp;Hongbo Wang,&nbsp;Mingze Ma,&nbsp;Yihan Liu","doi":"10.1007/s10854-025-14607-3","DOIUrl":"10.1007/s10854-025-14607-3","url":null,"abstract":"<div><p>With the rapid development of communication technology, concerns regarding electromagnetic radiation pollution have significantly increased. In this study, copper nanoparticles were deposited onto graphite via an electroless plating process to prepare Cu@Graphite/epoxy resin composite coatings with the volume fraction of Cu@Graphite varying from 30 to 60%. The impact of Cu@Graphite content on phase composition, microstructure, and electromagnetic properties was systematically studied. The microwave-absorbing properties of the composite coatings were evaluated, revealing that the composite coating with 50 vol% Cu@Graphite content exhibited optimal performance. Specifically, the composite coating achieved a minimum reflection loss of − 46.39 dB and an effective absorption bandwidth of 2.19 GHz (with a reflection loss below − 10 dB) at a thickness of only 1.7 mm. The results indicate that the investigated Cu@Graphite filled epoxy resin composite coatings exhibit high potential for application as microwave absorbers in the X-band (8.2–12.4 GHz).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143717020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In situ iodine-doped sensitization for enhanced mid-infrared detection in PbSe thin films","authors":"Zhicheng Ye,&nbsp;Quanjiang Lv,&nbsp;Mingyang Yu,&nbsp;Huang Xu,&nbsp;Guiwu Liu,&nbsp;Guanjun Qiao,&nbsp;Junlin Liu","doi":"10.1007/s10854-025-14568-7","DOIUrl":"10.1007/s10854-025-14568-7","url":null,"abstract":"<div><p>Conventional sensitization methods for lead selenide (PbSe) films typically involve annealing in an atmosphere containing iodine, oxygen, and nitrogen, where iodine plays a pivotal role. However, these approaches face limitations in achieving uniform and precise iodine incorporation. In this study, we propose an in situ iodine-doped sensitization process based on chemical bath deposition, offering a streamlined alternative. This one-step synthesis of iodine-doped PbSe films enables efficient sensitization, allowing for comprehensive control over dopant concentration. Systematic investigations reveal that iodine doping reduces the bandgap (from 0.317 eV to 0.303 eV), suppresses electron–hole recombination, and extends carrier lifetimes. At an optimal potassium iodide (KI) concentration of 1.8 × 10^–3 mol/L, the sensitized PbSe films exhibit a detectivity of 1.81 × 10⁹ Jones and a rapid response time of 1.97 ms under 1550 nm infrared illumination. Combined with X-ray photoelectron spectroscopy (XPS) and energy-dispersive spectroscopy (EDS) analyses, we demonstrate that iodine migration promotes lattice oxygen incorporation at grain boundaries, forming sensitization centers critical for enhanced photoconductivity. This work not only simplifies the sensitization process but also provides mechanistic insights into PbSe-based infrared photodetectors, highlighting its potential for scalable and cost-effective fabrication.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14568-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room temperature NO2 sensing performance of ZnO nanorods modified VO2(B) nanosheets interlaced self-assembly nanoflowers","authors":"Jiran Liang,&nbsp;Wanwan Tai,&nbsp;Penghui Ge,&nbsp;Xiaoping Gao,&nbsp;Hairun Zhang,&nbsp;Hao Chen,&nbsp;Yu Han","doi":"10.1007/s10854-025-14621-5","DOIUrl":"10.1007/s10854-025-14621-5","url":null,"abstract":"<div><p>In this work, VO₂(B) nanoflower–ZnO nanorod composite structures were proposed to enhance the sensing performance of VO₂(B) nanosheets to NO₂ at room temperature. VO₂(B) nanoflower composed of nanosheets and ZnO nanorods composite structures with uniform size were synthesized by a combination method of hydrothermal and water bath. The effects of hydrothermal time on the morphology and gas-sensitive performance of VO₂(B) nanoflowers, and the effect of ZnO content on the room temperature NO₂ sensing performance of VO₂(B) nanoflowers–ZnO nanorods composite structures were investigated. The VO₂(B) nanoflower–ZnO nanorod composite structure shows a response of 4.96 to 5 ppm NO₂, with an enhancement of up to 212% compared to VO₂(B) nanoflower. The improvement in NO₂ sensing performance can be attributed to an increase in the specific surface area of VO₂(B) nanoflowers, an increase in the number of homojunctions in VO₂(B) nanoflowers, and a synergistic effect of n–n heterojunction sensitization. Therefore, the activation of VO₂(B) with ZnO may be a promising approach for the design and fabrication of high-performance room temperature gas sensors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of CeO2 on electrical properties, mechanical and thermal performance of 0.76Bi1/2Na1/2TiO3–0.24SrTiO3 lead-free piezoelectric ceramics","authors":"Zong-Zheng Du,&nbsp;Guo-Zheng Zhang,&nbsp;Yu-Ting Yang,&nbsp;Xing-Ye Tong,&nbsp;Hong Liu","doi":"10.1007/s10854-025-14597-2","DOIUrl":"10.1007/s10854-025-14597-2","url":null,"abstract":"<div><p>Thermal and mechanical properties are important parameters for high-precision piezoelectric actuators. In this work, 0.76Bi_1/2Na_1/2TiO₃–0.24SrTiO₃-<i>x</i>wt% CeO₂ (abbreviated as BNST24-<i>x</i>Ce) lead-free ceramics are found to have a large electrostrain of 0.176%, and a normalized strain (<i>S</i>_max/<i>E</i>_max) of 880 pm/V under an ultra-low driving field of 2 kV/mm. The BNST24-0.05Ce lead-free ceramics showed the representative parameters of Young’s modulus <i>E</i> ~ 142.1 GPa, Vickers indentation hardness <i>H</i>_<i>v</i> ~ 4.25 GPa, fracture toughness <i>K</i>_IC ~ 1.36 MPa·m^1/2, thermal conductivity <i>λ</i> ~ 1.392 W m⁻¹ k⁻¹, and coefficient of thermal expansion values <i>CTE</i> ~ 9.20 × 10⁻⁶ K⁻¹. These results indicate that these lead-free BNT-ST-based ceramics have excellent strain, thermal, and mechanical properties that meet the requirements for practical applications as piezoelectric actuators.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evolution of crystalline phases in glass matrix and their effect on optical and photoluminescent properties of silicate glasses derived from agro-food wastes","authors":"Shivani Punj,&nbsp;Navneet Kaur Mattu,&nbsp;Kulvir Singh","doi":"10.1007/s10854-025-14616-2","DOIUrl":"10.1007/s10854-025-14616-2","url":null,"abstract":"<div><p>The glass was synthesized using sustainable agro-food waste such as corn husk (CHA), sugar cane leaves ash (SCLA), and eggshell powder (ESP). Further, the glass is doped with 0.5 and 1 wt% of Dy₂O₃ and heat treated at 800, 900, and 1000 °C to convert into glass ceramics. The heat-treated glass ceramics are characterized and tested by various techniques. The optical bandgap is decreased with crystalline phase formation. The photoluminescence studies reveal the strong emission peaks corresponding to Dy³⁺ transitions, the emission peaks at 483 nm (blue), 576 (yellow), 664, and 753 nm (red) corresponding to ⁴F_9/2 → ⁶H_15/2, ⁴F_9/2 → ⁶H_13/2, ⁴F_9/2 → ⁶H_11/2 and ⁴F_9/2 → ⁶ H_9/2 transitions and CIE coordinates approaching white light coordinates with the increase in higher temperatures and at high Dy³⁺ doping concentrations. The obtained results were compared with glass and crystalline counterparts of silicate-based glasses. The study highlights the potential of using agro-food waste-derived glass ceramics as host materials without hampering photoluminescence properties and can be used in energy-efficient solid-state lighting applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of stibnite thickness on the degradation of methylene blue in aqueous solutions under visible light","authors":"Adel Chihi","doi":"10.1007/s10854-025-14501-y","DOIUrl":"10.1007/s10854-025-14501-y","url":null,"abstract":"<div><p>In this work, we have investigated the physical, and photocatalytic properties of Sb₂S₃ thin films deposited on glass substrates by a dip-coating method as a function of their film thickness. The photocatalytic degradation of methylene blue (MB) dye under dark and visible light conditions for 60 min was used for the photocatalytic activity of Sb₂S₃ thin films. The champion photodegradation rate of 98.5% for MB under visible light conditions was obtained with a film thickness of 1200 nm. The surface morphology of stibnite films was studied by field emission scanning electron microscope (FESEM), demonstrating that the grain size increased as the film thickness increased. X-ray diffraction (XRD) analysis revealed the formation of a polycrystalline orthorhombic structure with a clear preferred orientation along the (221) plane. The formation of a single phase of stibnite thin films was corroborated by measuring Raman spectra, unveiling five major Raman peaks. The estimated optical band gap value decreases from 1.72 to 1.67 eV as the film thickness rises from 300 to 1500 nm, indicating the possibility of band gap tuning by changing the Sb₂S₃ film thickness. Electrochemical impedance spectroscopy (EIS) analysis has demonstrated the outstanding charge transfer properties of the stibnite thin films in the sample with a thickness of 1200 nm. These outcomes highlight the potential of film thickness for advanced photocatalytic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14501-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143707003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}