{"title":"Optical and scintillation properties of Tm-doped Ca3TaGa3Si2O14 single crystals","authors":"Ryosei Takahashi, Kai Okazaki, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida","doi":"10.1007/s10854-024-13907-4","DOIUrl":"10.1007/s10854-024-13907-4","url":null,"abstract":"<div><p>Undoped and Tm-doped Ca<sub>3</sub>TaGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub> (CTGS) single crystals were synthesized by the floating-zone method, and their photoluminescence (PL) and scintillation properties were investigated. The Tm-doped samples showed PL and scintillation due to 4<i>f</i>–4<i>f</i> transitions of Tm<sup>3+</sup>. The PL quantum yields of the 0.1, 0.5, 1, and 2% Tm-doped CTGS samples were, respectively, 4.2, 28.2, 27.6, and 8.3% when excited at 360 nm. The afterglow levels at 20 ms after X-ray irradiation of all the samples were 10–83 ppm. The 0.1, 0.5, and 1% Tm-doped CTGS samples, respectively, showed the light yields of 1300, 1800, and 1500 photons/MeV under γ-ray irradiation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142694805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Ait Bouzid, N. Elhamouchi, M. Sajieddine, O. Aitmellal, V. Kuncser, A. C. Galca, N. Iacob, M. Enculescu, A. Essoumhi
{"title":"Magnetocaloric properties of La0.9K0.1MnO3 and La0.8K0.1Pb0.1MnO3 bulk perovskite manganites","authors":"S. Ait Bouzid, N. Elhamouchi, M. Sajieddine, O. Aitmellal, V. Kuncser, A. C. Galca, N. Iacob, M. Enculescu, A. Essoumhi","doi":"10.1007/s10854-024-13873-x","DOIUrl":"10.1007/s10854-024-13873-x","url":null,"abstract":"<div><p>In the present work, we report the synthesis and investigations of La<sub>0.9</sub>K<sub>0.1</sub>MnO<sub>3</sub> and La<sub>0.8</sub>K<sub>0.1</sub>Pb<sub>0.1</sub>MnO<sub>3</sub> bulk samples which could be potential magnetocaloric materials for magnetic refrigeration close to room temperature. A flash combustion reaction and sintering at 1200 °C for 10 h are used to prepare the bulk materials. Both compounds crystallized into a rhombohedral structure with R<span>(overline{3 })</span>c space group confirmed by X-ray powder diffraction results. Scanning electron microscopy analysis, combined with XRD peak profiles is performed to estimate the particle/crystallite size of the samples. Moreover, the Curie temperature, T<sub>C</sub>, is found to be higher in lead-rich sample due to the enhancement of the grain size and the Mn<sup>3+</sup>–O–Mn<sup>4+</sup> double exchange (DE) interaction. Therefore, the bulk sample La<sub>0.8</sub>K<sub>0.1</sub>Pb<sub>0.1</sub>MnO<sub>3</sub> shows a room temperature phase transition of 289 K as well as a higher saturation magnetization. The La<sub>0.8</sub>K<sub>0.1</sub>Pb<sub>0.1</sub>MnO<sub>3</sub> bulk compound exhibits a high and sharp peak in magnetic entropy change up to 5.5 Jkg<sup>−1</sup> K<sup>−1</sup> under 5 T at the magnetic transition temperature T<sub>C</sub>. To compare the magnetocaloric performances of the studied compounds, relative cooling power (RCP) was employed. The obtained experimental results revealed that the increase in particle size influences severely the magnetocaloric properties.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142694819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-performance AZO transparent electrodes with enhanced mechanical flexibility and conductivity through imbedding of Ag NWs","authors":"Jinke Bai, Chongdu Yu, Kangchun Tan, Shuai Shi, Lijun Song, Shihui Yu","doi":"10.1007/s10854-024-13920-7","DOIUrl":"10.1007/s10854-024-13920-7","url":null,"abstract":"<div><p>The mechanical flexibility and conductivity of Al-doped ZnO thin films on flexible substrates are improved effectively via imbedding of silver nanowires (Ag NWs). The corresponding optical and electrical properties (before imbedding Ag NWs: 47.9 Ω/sq. at 85.1%, after imbedding Ag NWs: 14.7 Ω/sq. at 84.9%) indicate that the imbedding of Ag NW enables the preservation of high transparency and improvement of conductivity of AZO thin films. The resistance of AZO-Ag NW composites remains nearly constant after 2000 bending cycles at curvature radius of 8.0 mm, while the resistance of AZO thin films is increased significantly, which indicates the mechanical flexibility is enhanced by the Ag NWs. In addition, the resistance of the AZO-Ag NW composites is almost unchanged after experiencing strong oxidation and high corrosion tests. These results indicate that embedding of Ag NWs is a promising solution to solve critical problems of high resistance and brittle AZO thin films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. A. Majeed Khan, Poonam Nain, Sushil Kumar, Anees A. Ansari, Maqusood Ahamed, Mohammed Shahabuddin
{"title":"Improved photocatalytic and electrochemical activities of (Nd3+, Yb3+) co-doped TiO2 nanoparticles synthesized by hydrothermal protocol","authors":"M. A. Majeed Khan, Poonam Nain, Sushil Kumar, Anees A. Ansari, Maqusood Ahamed, Mohammed Shahabuddin","doi":"10.1007/s10854-024-13904-7","DOIUrl":"10.1007/s10854-024-13904-7","url":null,"abstract":"<div><p>Pure TiO<sub>2</sub>, (Nd 5%) doped TiO<sub>2</sub>, and (Nd 5%, Yb 3%) co-doped TiO<sub>2</sub> nanoparticles were prepared independently through a hydrothermal route and well characterized them with complimentary analytical techniques e.g. XRD, SEM, EDS, XPS, UV–Vis, photocatalytic and PL. The polycrystalline anatase phase and the integration of dopant ions into TiO<sub>2</sub> matrix was confirmed by X-ray diffraction. The crystallite size increased from 25 to 28 nm with the dual doping of Nd and Yb ions, as determined by Scherrer formula. The optical absorption edge of (Nd 5%, Yb 3%) co-doped TiO<sub>2</sub> shifted towards a longer wavelength, and hence band gap decreased from 3.38 to 3.03 eV, attributed to the enhanced absorption of visible light. The reduction in PL intensity indicated that electron–hole pair recombination rate decreased with the incorporation of Nd and/or Yb ions in TiO<sub>2</sub> matrix. The photodecomposition of methylene blue dye under visible light irradiation was remarkably improved, from 62.6 to 93.2%, when (Nd 5%, Yb 3%) co-doped TiO<sub>2</sub> used as photocatalyst compared to pure TiO<sub>2</sub> nanoparticles. The enhanced rate constant, from 0.00907 to 0.02849 min<sup>−1</sup>, predicted that (Nd 5%, Yb 3%) co-doped TiO<sub>2</sub> photocatalyst could effectively degrade MB dye when driven by visible light. Electrochemical (CV, GCD, EIS) analysis was conducted to evaluate the electrochemical properties of (Nd 5%, Yb 3%) co-doped TiO<sub>2</sub>, (Nd 5%) doped TiO<sub>2</sub>, and pure TiO<sub>2</sub> nanoparticles. The results demonstrated that (Nd 5%, Yb 3%) co-doped TiO<sub>2</sub> electrode material exhibited excellent electrochemical performance for employing in supercapacitors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hewei Ding, Yulong Qiao, Mengyang Wang, Jin Li, Xinyu Tan
{"title":"Synthesis and characterization of (sm, Al) co-doped SrTiO3 with giant dielectric constant and low dielectric loss through defect engineering design","authors":"Hewei Ding, Yulong Qiao, Mengyang Wang, Jin Li, Xinyu Tan","doi":"10.1007/s10854-024-13917-2","DOIUrl":"10.1007/s10854-024-13917-2","url":null,"abstract":"<div><p>Sr<sub>0.975</sub>Sm<sub>0.025</sub>Ti<sub>1−x</sub>Al<sub>x</sub>O<sub>3</sub> (x = 0, 0.005, 0.01, 0.015, 0.02, 0.025) ceramics were synthesized via solid-state reaction. The sample with an x = 0.005 doping concentration exhibited the optimal dielectric properties, with an electric constant of 8832 and a dielectric loss of tanδ = 0.019, measured at 1 kHz and room temperature. This sample also exhibited excellent frequency stability (ranging from 100 Hz to 1 MHz) and temperature stability (from room temperature to 200 °C). The activation energy calculation for the dielectric modulus relaxation peak, coupled with XPS results, indicates that in the sample with x = 0.005, there is a significant presence of oxygen vacancies and Ti<sup>3+</sup> ions, which form defect complexes (Ti<sup>3+ </sup>−<span>(V_O^{..})</span>−Ti<sup>3+</sup>). These complexes restrict the delocalization of electrons, leading to electron pinning. Consequently, the sample demonstrates a high electric constant and low dielectric loss. In addition to the defect complexes, high grain boundary resistance reduces dielectric loss and enhances temperature stability. The findings of this study offer crucial conceptual insights for the defect engineering of complex perovskite materials, facilitating the development of doped strontium titanate ceramics with colossal permittivity.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jinhua Lao, Jianwen Chen, Dengyan Hu, Wenbo Zhu, Si Liu, Xiucai Wang, Shaopeng Zhou, Peng Xiao, Xinmei Yu, Zhongbin Pan
{"title":"Enhancing the heterointerface stability of Al2O3/Ba0.5Sr0.5TiO3/Al2O3 composite thin films by adaptive anodizing method under high electric field","authors":"Jinhua Lao, Jianwen Chen, Dengyan Hu, Wenbo Zhu, Si Liu, Xiucai Wang, Shaopeng Zhou, Peng Xiao, Xinmei Yu, Zhongbin Pan","doi":"10.1007/s10854-024-13922-5","DOIUrl":"10.1007/s10854-024-13922-5","url":null,"abstract":"<div><p>The utilization of multiple dielectric materials is an effective way to improve the energy storage performance of dielectric thin films. However, the heterointerfaces are the underbelly of multilayer dielectric thin films, which often causes defect-induced breakdown. The adaptive anodizing method was proposed to optimize dielectric heterointerface. The single anodization Al<sub>2</sub>O<sub>3</sub>/Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> (SAB) thin films were fabricated by anodizing Al/Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub>/Al thin films under the high electric field. The Al<sub>2</sub>O<sub>3</sub>/Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> abrupt interfaces had been optimized to become more compact, forming stable transition heterointerfaces. The SAB thin films exhibit excellent electric properties, including a breakdown strength of 580 MV m<sup>−1</sup>, an energy storage density of 16.4 J cm<sup>−3</sup>, and a leakage current density < 10<sup>–6</sup> A cm<sup>−2</sup> from 0 to 225 MV m<sup>−1</sup>. The finite element simulation was constructed to demonstrate the defect self-repair process under high electric field. This work offers a promising strategy to fabricate multilayer dielectric thin films with high breakdown strength and energy storage density.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142694790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yifei Zhang, Duo Qi, Yitan Wang, Tianyu Wang, Yiran Tian, Bo Zhang, Na Wang
{"title":"Rhus typhina wood-based biochar electrodes for high effective potassium storage capacity","authors":"Yifei Zhang, Duo Qi, Yitan Wang, Tianyu Wang, Yiran Tian, Bo Zhang, Na Wang","doi":"10.1007/s10854-024-13890-w","DOIUrl":"10.1007/s10854-024-13890-w","url":null,"abstract":"<div><p>With the growing demand for secondary energy storage, potassium-ion batteries have garnered significant attention. However, the radius of potassium ions is too large, and the intercalation and detachment during charging and discharging will cause damage to the material structure. Therefore, the design and preparation of anode materials with high capacity and stability is the key to the development of potassium-ion batteries. Biomaterial has a significant place in energy storage for its utilization of renewable and cost-effective advantages. In this work, biomass branches are applied to serve as an inexpensive carbon precursor to fabricate porous carbon microstructure via hydrothermal treatment and a two-step activation method. The pore structure characteristics of the carbon were tuned by adjusting the activator ratio. This results in a porous structure with high conductivity, which is suitable for the rapid diffusion of potassium ions. The activated CK-1:4 successfully constructed a large number of mesoporous and microporous structures on the surface of the biochar by SEM and TEM tests, providing more active sites for the storage of potassium ions. When used as a PIB anode, CK-1:4 has a high reversible capacity of 108.4 mAh g<sup>−1</sup> at 0.2 C and stable cycling performance (at a high current density of 0.2 C, it still exhibits an ultra-long cycling stability with a discharge capacity of 62.4 mAh g<sup>−1</sup> after 1000 cycles). The in-depth electrochemical potassium storage mechanism is elaborated, which mainly relies on the capacitance-controlled contribution, further revealing the rapid reaction kinetics. In summary, the application of activated porous biochar materials to potassium-ion batteries can significantly improve the cycling performance of potassium-ion batteries. The results provide a new efficient and low-cost route for the development of anode materials for potassium-ion batteries.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142692027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development of highly sensitive UV photodetector based on chevronic TiO2 thin film using simple oblique angle deposition technique","authors":"Pinky Khundrakpam, Biraj Shougaijam, Ashish Ranjan","doi":"10.1007/s10854-024-13913-6","DOIUrl":"10.1007/s10854-024-13913-6","url":null,"abstract":"<div><p>Chevronic TiO<sub>2</sub> thin film (CTTF)-based ultraviolet (UV) photodetector was fabricated on <i>p</i>-type silicon (Si) substrate using oblique angle deposition (OAD) technique inside an electron beam evaporation chamber. A conventional TiO<sub>2</sub> thin film (TTF) was also fabricated to compare the performances of the UV photodetectors. The field emission scanning electron microscopy (FE-SEM) image verified the porous nature of the successfully fabricated chevronic TiO<sub>2</sub> nanostructures (~ 236 nm), while the X-ray diffraction (XRD) analysis confirmed the amorphous nature of both the CTTF and TTF samples. Optical absorption of CTTF showed enhancement of absorption intensity between ~ 380 nm and 800 nm wavelength than the conventional TTF. An energy bandgap of ~ 3.31 eV was observed from the Tauc plot of the CTTF. The CTTF- and TTF-based photodetector devices were analyzed under UV illumination (~ 390 nm) at a biasing of − 2 V. Superior performances of the CTTF-based photodetector in terms of photosensitivity (~ 7.65), responsivity (~ 1.79 A/W), detectivity (~ 1.40 × 10<sup>12</sup> Jonnes), noise equivalent power (~ 2.01 × 10<sup>–12</sup>) and external quantum efficiency (5.69) were achieved compared to the conventional TTF and other previously reported photodetectors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Q. S. Fu, B. Meng, X. H. Chen, H. X. Yin, S. L. Yuan
{"title":"Dielectric response, electrical conductivity and scaling behavior of LuFe0.5Cr0.5O3 perovskite","authors":"Q. S. Fu, B. Meng, X. H. Chen, H. X. Yin, S. L. Yuan","doi":"10.1007/s10854-024-13866-w","DOIUrl":"10.1007/s10854-024-13866-w","url":null,"abstract":"<div><p>Polycrystalline LuFe<sub>0.5</sub>Cr<sub>0.5</sub>O<sub>3</sub> perovskite ceramic was synthesized via the solid-state reaction method. Analysis of the electrical modulus reveals a relaxation behavior that does not follow the Debye model. The impedance plots suggest that both grains and grain boundaries contribute to the electric response of the sample. At higher temperatures, an increase in conductivity is observed for both grains and grain boundaries, as demonstrated by Nyquist analysis. The comparable activation energy values of DC conduction and relaxation suggest that similar factors are accountable for both phenomena. Moreover, based on the value of the activation energy of DC conduction, it can be considered that the dominant mechanism for conduction involves thermal stimulation of the electrons from the secondary ionization of oxygen vacancies to the conduction band. Scaling behaviors of electrical modulus, impedance spectra, and electrical conductivity confirm that the relaxation behavior is independent of temperature. Furthermore, the separation of the peak frequencies in electrical modulus and impedance curves confirms the occurrence of migrating carriers at both short and long ranges. It is also evident that there is an increase in carriers with short-range mobility at elevated temperatures. In summary, oxygen vacancies assume a pivotal role in governing both electrical conduction and dielectric relaxation behaviors of the ceramic sample.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hua Man, Xi Wang, Banglun Wang, Mengyang Shi, Ming Jiang, Dong Xu
{"title":"Effects of In2O3 and Ta2O5 co-doping on microstructure and electrical properties of ZnO low-voltage varistor","authors":"Hua Man, Xi Wang, Banglun Wang, Mengyang Shi, Ming Jiang, Dong Xu","doi":"10.1007/s10854-024-13924-3","DOIUrl":"10.1007/s10854-024-13924-3","url":null,"abstract":"<div><p>In this work, ZnO–Bi<sub>2</sub>O<sub>3</sub> based low-voltage varistors were prepared by co-doping of In<sub>2</sub>O<sub>3</sub> and Ta<sub>2</sub>O<sub>5</sub>, which achieved a high nonlinear coefficient with a low breakdown voltage. By exploring the microstructure and electrical performance of the samples, it was found that the samples co-doped with In<sub>2</sub>O<sub>3</sub> and Ta<sub>2</sub>O<sub>5</sub> have uniform microstructure, and the threshold voltage decreased slightly while the leakage current decreased. The best performance of the varistor was obtained at 0.15 mol% Ta<sub>2</sub>O<sub>5</sub> doping with a breakdown voltage of 184 V/mm, a nonlinear coefficient of 32.3 and a leakage current of 0.04 μA. The grain boundary resistance of the varistor increased after the co-doping of In<sub>2</sub>O<sub>3</sub> and Ta<sub>2</sub>O<sub>5</sub>, which was conducive to improving performance stability of the sample. All varistors could be aged, but the parameter change rate of doped varistors was significantly smaller.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}