Journal of Materials Science: Materials in Electronics最新文献

{"title":"Coupled regulation by sintering and post-sintering heat treatment for improved current-carrying stability of ZnO varistor ceramics","authors":"Zhiyao Fu,&nbsp;Jiazheng Lu,&nbsp;Haocheng Liu,&nbsp;Zhuang Tang,&nbsp;Kai Ning","doi":"10.1007/s10854-026-18606-w","DOIUrl":"10.1007/s10854-026-18606-w","url":null,"abstract":"<div><p>A processing window that simultaneously preserves nonlinear electrical properties and high-current stability is required for conventional ZnO varistor ceramics. Here, six sintering temperatures (1050–1200 °C) were evaluated using phase composition, microstructure, <i>E</i>–<i>J</i> characteristics, 2 ms square-wave loading, and 4/10 μs and repeated 8/20 μs impulse tests. The sample sintered at 1150 °C was selected by a multi-criterion assessment that prioritized impulse endurance and energy absorption while maintaining acceptable voltage gradient, leakage-current density, nonlinear coefficient, and relative density. Post-sintering treatment was then mapped independently over 425–725 °C and cooling rates of 5–90 °C/h. Treatment at 525 °C for 2 h followed by cooling at 15 °C/h produced the smallest measured E_1mA variation (4.43%) after two 100 kA, 4/10 μs impulses. XRD, SEM, temperature-dependent conductivity, and dielectric-relaxation analyses show that changes in the bismuth-rich grain-boundary phase state are accompanied by systematic variations in the apparent grain-boundary barrier, relaxation response, and impulse stability. The resulting processing-stability map provides a practical basis for optimizing conventionally sintered ZnO varistors for high-current service.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrazine-mediated growth of interconnected Co3O4 nanosheet networks for enhanced pseudocapacitive kinetics","authors":"Avinash K. Ladgaonkar,&nbsp;Bhagyasree A. Sutar,&nbsp;Avdhut S. Sutar,&nbsp;Sushant B. Patil,&nbsp;Sachin J. Pawar,&nbsp;Sang Yeol Lee,&nbsp;Bhushan B. Dhale","doi":"10.1007/s10854-026-18551-8","DOIUrl":"10.1007/s10854-026-18551-8","url":null,"abstract":"<div><p>Controlling the growth environment during transition-metal oxide synthesis offers an effective way to tailor their structure and electrochemical properties. In this study, hydrazine-assisted electroless deposition is used to explore its effects on the growth, nanosheet structure, and charge-storage performance of Co₃O₄ thin films. Systematic variations in hydrazine concentration influence the nucleation-growth process, lead to significant changes in the morphology, and improve the electrochemical performance of the Co₃O₄ nanosheet structures. As a result, the enhanced Co₃O₄ electrode achieves an areal capacitance of 324.2 mF/cm² at 10 mV/s and maintains 80% of its original capacitance after 5000 cycles. Electrochemical kinetics and impedance tests also suggest excellent charge-transfer and ion-transport properties due to the optimized interconnected nanosheet structure. Based on the concentration-dependent morphological evolution, we propose a growth mechanism that correlates the hydrazine-regulated chemical environment with nanosheet development and electrochemical accessibility. These findings establish a growth environment-structure-electrochemistry relationship for electrolessly deposited Co₃O₄ and provide insights into the rational design of nanostructured pseudocapacitive electrodes.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Porous spinel oxide composites supported by self-generated carbon from ZIF-modified chitosan aerogels for high energy supercapacitor electrodes","authors":"Intisar Abbas Hamad,&nbsp;Anwar Ali Baqer,&nbsp;Mohammed Nadhim Abbas","doi":"10.1007/s10854-026-18519-8","DOIUrl":"10.1007/s10854-026-18519-8","url":null,"abstract":"<div><p>In this work, porous spinel–spinel composite electrode materials based on aerogel frameworks derived from chitosan and architectures derived from ZIF-67 compounds were constructed using a systematic design approach. The chitosan aerogel template serves as both a precursor for self-generated conductive carbon and a three-dimensional porous scaffold, and was used to create porous Cu-based spinel oxides (CuMn₂O₄ and CuCo₂O₄). Then, the spinel surface was covered with a layer of ZIF-67 (a cobalt-based metal–organic framework), which was thermally transformed into porous spinel (Co₃O₄) to fabricate a hierarchical composite with synergistic effects and superior electrochemical properties. The structural, morphological, and compositional properties confirmed the successful formation of the prepared aerogel-derived materials. The electrochemical performance was evaluated using a three-electrode setup. The Co₃O₄/CuMn₂O₄ composite exhibited high specific capacitance of 3158 F g⁻¹ at 1 A g⁻¹ and stability of more than 80% after 4000 cycles. These results show that the simple, economical, and effective method for creating supercapacitor electrodes makes this type of aerogel-based structure a promising candidate for next-generation energy storage applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering Al2O3/ZrO2/MgF2 multilayer thin films via electron-beam evaporation for multifunctional optical and dielectric applications","authors":"Inamullah,&nbsp;Kakul Husain,&nbsp;Asad Ali,&nbsp;S. G. Asadullayeva,&nbsp;N. Ismailova,&nbsp;Vineet Tirth,&nbsp;Salah Knani,&nbsp;Abid Zaman","doi":"10.1007/s10854-026-18586-x","DOIUrl":"10.1007/s10854-026-18586-x","url":null,"abstract":"<div><p>The multilayer thin film, Al₂O₃/ZrO₂/MgF₂, has been deposited by the electron-beam evaporation on the BK7 glass substrates under the base vacuum of 5.0×10⁻⁵ mbar with the total thickness of 261.2 nm. The thicknesses of each layer were 62.8 nm (Al₂O₃), 100.6 nm (ZrO₂), and 97.8 nm (MgF₂), and the layers were post-deposition annealed at 400 ℃ for 2 h in air. Systematic studies of the effect of annealing on the structural, morphological, optical, electrical, and dielectric properties were carried out. The results of the X-ray diffraction showed that the as-deposited film and the annealed film were still mainly amorphous and the film annealed had a higher short-range atomic order without crystallization occurring to a significant extent. The multilayer surfaces were determined to be dense, homogeneous without cracks by scanning electron microscopy and it was confirmed that the distribution of Al, Zr, Mg, F, and O was uniformly distributed throughout the coating structure by energy-dispersive X-ray spectroscopy after annealing. The characteristic bands associated with Al-O, Zr-O, and metal-fluoride bonding was also observed using Fourier transform infrared (FTIR) spectroscopy, and after the annealing process, the bands associated with metal-O bonding increased and hydroxyl-related bands decreased improving the densification of the film. The UV–Vis measurements revealed a pronounced near-UV absorption edge around 310 nm, corresponding to an optical energy of approximately 4.0 eV, together with relatively low absorbance in the visible region (400–800 nm). The dielectric constant at low frequency was high and decreased with the rise in frequency in the presence of Maxwell–Wagner interfacial polarization, while the dielectric loss was low with the increase in conductivity in the AC region, which implies a charge transport by hopping. The results demonstrated that the Al₂O₃/ZrO₂/MgF₂ multilayer thin films exhibited good structural integrity, optical transparency, and dielectric stability, thus holding great potential for use as optical coatings, dielectric coatings, microelectronic devices, and protective coatings, energy storage systems, and high-tech optical electronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical nonlinear properties of gadolinium-doped In2S3 thin films prepared by nebulizer-aided spray pyrolysis method","authors":"S. Udhayan,&nbsp;G. Sudha,&nbsp;A. M. S. Arulanantham,&nbsp;P. Mohanraj,&nbsp;K. Dinesh Babu,&nbsp;N. Muthurathinam,&nbsp;C. Rangasami,&nbsp;F. Regan Maria Sundar Raj","doi":"10.1007/s10854-026-18610-0","DOIUrl":"10.1007/s10854-026-18610-0","url":null,"abstract":"<div><p>Nonlinear optical properties are of increasing importance in the development of optoelectronic devices. In the current study, undoped and gadolinium-doped In₂S₃ thin films have been deposited by nebulizer spray pyrolysis within a Gd doping range of 0–5 wt%. The focus of the investigation is on how the presence of rare-earth element affects the optical properties gadolinium has been chosen to be used as the dopant since the ionic radius of gadolinium is nearly equal to that of In³⁺, which would make it possible for gadolinium to occupy the same position as the In³⁺ ion without causing crystal structure distortion. Different analytical methods have been employed to investigate the physical properties of the prepared samples. It is noteworthy that the 3 wt% Gd sample exhibits the strongest overall nonlinear optical response among the studied samples, with the nonlinear absorption coefficient, nonlinear refractive index, and third-order susceptibility all peaking at this composition, alongside a direct bandgap of 2.49 eV identifying it as a promising candidate absorber layer, while the smallest crystallite size among the crystalline samples was instead observed at 4 wt% Gd (see Tables 1 and 3). The surface of the films had a tight nano-grain structure, forming dots throughout the film. Visible-to-NIR absorbance spectra (400–1000 nm) showed a progressive increase in absorbance with Gd doping up to 3 wt%, followed by a decrease at higher concentrations. The optical bandgap decreased from 2.76 eV (undoped) to a minimum of 2.49 eV at 3 wt% Gd, before increasing again at higher doping levels. Values ranging from 2.49 to 2.76 eV were obtained using the Tauc equation. Z-scan method was used to evaluate the values of nonlinear absorption coefficient, nonlinear refractive index, and third-order susceptibility in both undoped and doped thin films. The nonlinear absorption coefficient <i>β</i>, nonlinear refractive index <i>n</i>₂, and third-order susceptibility |χ⁽³⁾| all peaked at 3 wt% Gd, with <i>β</i> ranging from −3.98 × 10⁻² m/W (undoped) to −7.40 × 10⁻² m/W, <i>n</i>₂ ranging from −4.41 × 10⁻⁹ to −12.09 × 10⁻⁹ m²/W, and |χ⁽³⁾| ranging from 491.4 × 10⁻¹³ to 2149.5 × 10⁻¹³ m²/V². Results have shown that NLO properties make these thin films good candidates for optical switches and sensors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sm+3-substituted Ni–ZnO nanomaterials: structural, spectroscopic, and electrochemical properties for high-performance symmetric supercapacitors","authors":"Yousma Awan,&nbsp;Safia Anjum,&nbsp;Rabia Khurram,&nbsp;Aqsa Nadeem,&nbsp;Muhammad Hammad Shabbir,&nbsp;Fatima Ahtasham,&nbsp;Javaria Gilani","doi":"10.1007/s10854-026-18541-w","DOIUrl":"10.1007/s10854-026-18541-w","url":null,"abstract":"<div><p>The current project deals with the tri-metallic Sm–Ni–ZnO nanomaterial with the general formula Sm_xNi_(0.1-x)Zn_0.9O, where (<i>x</i>=0.0 to 0.05), have been synthesized Using the hydrothermal route. The structural, refinement, morphology, compositional, spectroscopy, and electrochemical properties have been carried out using X-ray diffractometer (XRD), Xpert-High score, scanning electron microscope (SEM), X-ray photon spectroscopy (XPS), Fourier infra-red spectroscopy, Raman spectroscopy, and galvanostatic potentiometer, respectively. The XRD reveales a dominant hexagonal wurtzite ZnO structure. Its composition  is confirmed by XPS and EDS analysis and it has a smooth particle distribution. Electrochemically, the electrode exhibits a low charge transfer resistance of 1.4 Ω and a large electroactive surface area of 485 cm², indicating efficient charge transfer and optimal electrochemical activity. The specific capacitance derived at <i>x</i> = 0.05 is 1189 F g⁻¹ at the slowest scan rate with 88% retention even after 5000 repeated cycles of stability test. The specific capacitance using GCD at <i>x</i> = 0.05 reveals 1340 F g⁻¹, energy density 85.7WhK g⁻¹ and power density of 0.460 kWkg⁻¹for current density 1 Ag⁻¹ with 85% retention. The <i>x</i> = 0.05 Sm-based two-electrode device delivered 541.8 and 562 F g⁻¹ specific capacitances from CV and GCD analyses, respectively, with 44.96 WhKg⁻¹ energy density and 0.576 kWkg⁻¹ power density. Based on the findings, the rare-Earth samarium-substituted nickel–zinc oxides are recommended as excellent candidates for advanced supercapacitor applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of (Al1/2Ta1/2)4+ ionic doping on structure and microwave dielectric properties of novel low-firing Li4SrCaSi2O8 ceramics","authors":"Jingmei Zhao,&nbsp;Hairong Wang,&nbsp;Jun Yang,&nbsp;Jiefu Yu,&nbsp;Han Li,&nbsp;Hongyu Yang","doi":"10.1007/s10854-026-18623-9","DOIUrl":"10.1007/s10854-026-18623-9","url":null,"abstract":"<div><p>The development of low-temperature co-fired ceramics (LTCC) for high-frequency applications demands materials with low relative permittivity (<i>ε</i>_r), high quality factor (<i>Q</i>×<i>f</i>), and low sintering temperature. In this work, (Al_1/2Ta_1/2)⁴⁺ ions were introduced to synthesize Li₄SrCa[Si_1-<i>x</i>(Al_1/2Ta_1/2)_<i>x</i>]₂O₈. The structural evolution, bond characteristics, and correlations with microwave dielectric properties were investigated. Rietveld refinement and Raman spectroscopy reveal that the larger ionic radius of the substituent causes lattice expansion, which manifests as an increasing cell volume and a consistent decline in the lattice packing fraction. Simultaneously, normalized bond analysis and P–V–L theory calculations demonstrate a weakening of lattice energy and a slight increase in bond ionicity, indicating a deteriorating intrinsic dielectric loss due to enhanced anharmonic lattice vibrations. The measured <i>Q</i>×<i>f</i> value reaches a peak of 59,353 GHz at <i>x</i> = 0.02, when sintered at 900 °C. This study provides new insights into optimizing low-loss silicates via composite-ion substitution.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring radiation response through surface growth engineering in CdS thin films","authors":"Indu Gupta,&nbsp;Rahul Jain,&nbsp;Kaushlendra Pandey,&nbsp;Arunachalam Arulraj,&nbsp;Sourav Nayak","doi":"10.1007/s10854-026-18607-9","DOIUrl":"10.1007/s10854-026-18607-9","url":null,"abstract":"<div><p>In this study, the surface growth engineering and radiation response characteristics of cadmium sulfide (CdS) thin films deposited on glass substrates via ammonia-free chemical bath deposition (CBD) were systematically investigated using atomic force microscopy (AFM), one-dimensional power spectral density (1DPSD) analysis, and transient radiation response measurements. The evolution of surface morphology and scaling behavior was analyzed as a function of deposition time and bath temperature (50–90 °C). A power-law dependence of surface roughness on deposition time was observed, yielding temperature-dependent growth exponents (<i>β</i>). The films deposited at 90 °C exhibited an anomalously low growth exponent (<i>β</i> = 0.06 ± 0.01), indicating dominant surface diffusion, efficient grain coalescence, and suppressed roughening. In contrast, films grown at 50 °C and 70 °C showed two distinct growth regimes with higher exponents (<i>β</i>₂ ≈ 0.25–0.32), attributed to the combined effects of surface diffusion and shadowing-assisted coarsening. The emergence of an intermediate scaling regime in 1DPSD further confirms anomalous scaling behavior and the evolution of surface instability during film growth. The influence of growth-induced morphological variations on charge transport and radiation-sensing performance was investigated under UV, X-ray, and gamma-ray irradiation. Smooth and compact films deposited at higher bath temperatures exhibited enhanced carrier transport, faster response/recovery dynamics, and improved radiation sensitivity due to reduced trap density and minimized grain-boundary scattering. Conversely, rough and porous films deposited at lower temperatures showed slower transient response arising from increased defect-assisted carrier trapping and tortuous transport pathways. A direct correlation between surface growth dynamics, roughness evolution, trap-assisted transport, and radiation response is established. The study demonstrates that controlled surface growth engineering provides an effective route for optimizing the optoelectronic and radiation detection performance of CdS thin films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemical and structural investigation of bio-derived agar–agar/ZnCl2 electrolyte for energy storage devices","authors":"Johnsi Maria Singaraj,&nbsp;Manikandan Vinoth,&nbsp;Kavitha Nagarasampatti Palani,&nbsp;Balasubramanian Natesan,&nbsp;Lakshmi Ravi,&nbsp;Nor Hakimin Abdullah,&nbsp;Nurul Akmar Che Zaudin","doi":"10.1007/s10854-026-18398-z","DOIUrl":"10.1007/s10854-026-18398-z","url":null,"abstract":"<div><p>The present investigation focuses on the development of solid biopolymer electrolytes based on agar–agar/ZnCl₂ for potential energy storage applications. Biopolymer electrolytes with varying compositions were prepared using solution casting method and systematically analyzed. Among the prepared samples, 70 wt% agar–agar:30 wt% ZnCl₂ electrolyte exhibited the maximum ionic conductivity of 5.41 × 10⁻⁴ S cm⁻¹, as determined by electrochemical impedance spectroscopy (EIS), which was further supported by morphological studies showing a uniform distribution within the polymer electrolyte system. Dielectric and modulus studies confirmed non-Debye type relaxation behavior in all the synthesized electrolyte samples. XRD analysis confirmed the effective dissociation of ZnCl₂ within the polymer matrix and FTIR spectroscopy revealed ion–dipole interactions between Zn²⁺ ions and the oxygen-containing polar groups of agar–agar, facilitating enhanced ionic conductivity. The low glass transition temperature (Tg) of 47 °C indicated improved polymer chain mobility. Biopolymer electrolyte system 70 wt% agar–agar:30 wt% ZnCl₂ exhibited an electrochemical stability window of 2.3 V and cyclic voltammetry studies demonstrated good reversibility, with zinc plating (reduction) and stripping (oxidation) occurring at a scan rate of 10 mV s⁻¹. These results highlight the potential of Agar–agar/ZnCl₂ biopolymer electrolyte as an eco-friendly electrolyte for energy storage applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unlocking the potential of Zn-PBA as electrode material for supercapacitor and electrocatalytic applications","authors":"Javid Ullah,&nbsp;Said Karim Shah,&nbsp;Jamal Shah,&nbsp;Ibrar Ahmad,&nbsp;Zia Ur Rehman,&nbsp;Muhammad Rauf,&nbsp;Khizar Hayat,&nbsp;Roberto Gunnella","doi":"10.1007/s10854-026-18507-y","DOIUrl":"10.1007/s10854-026-18507-y","url":null,"abstract":"<div><p>Prussian blue analogs with three-dimensional framework synthesized via facile co-precipitation route for supercapacitors and water splitting applications. X-ray diffraction and scanning electron microscopy confirmed the rhombohedral crystal structure with polyhedral and cubical morphology. X-ray photoelectron spectroscopy explored the surface chemistry and oxidation state of PBA. Brunauer–Emmet–Teller analysis shows specific surface area of 453.1 m²/g of PBA. Cyclic voltammetry (CV) displayed a specific capacitance (<i>C</i>_s) of 284.6 F/g in a three-electrode system at 5 mV/s, while asymmetric device exhibited a <i>C</i>_s of 64.9 F/g from the galvanostatic charge–discharge, with energy density of 21.67 Wh/kg at 1 A/g and power density of 3867.1875 W/kg at 5 A/g. Zn-PBA demonstrated good electrocatalytic performance, achieving low Tafel slopes of 78.9 and 95 mV/dec in oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). At OER condition the overpotential value is consistent with the multi-step potentiometry analysis. The asymmetric supercapacitor shows long-term stability, 75% of its capacitance retention and 83% of coulombic efficiency after 10,000 cycles. The prototype device testing powered a hygrometer for 31 min, and the light-emitting diode (LED) remained ON for 7 min. These results highlight that Zn-PBA is an effective electrode for supercapacitors and electrocatalysis.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}