Journal of Materials Science: Materials in Electronics最新文献

筛选
英文 中文
A novel environmentally friendly linear thermistor in the xAl2O3-(1-x)ZnO composite xAl2O3-(1-x)ZnO 复合材料中的新型环保线性热敏电阻器
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-31 DOI: 10.1007/s10854-024-13699-7
Xiao Zhang, Yun Chen, Siyi Li, Jianyun Hu, Hongfang Shen, Jionghua Wu, Sen Liang, Youjun Lu
{"title":"A novel environmentally friendly linear thermistor in the xAl2O3-(1-x)ZnO composite","authors":"Xiao Zhang,&nbsp;Yun Chen,&nbsp;Siyi Li,&nbsp;Jianyun Hu,&nbsp;Hongfang Shen,&nbsp;Jionghua Wu,&nbsp;Sen Liang,&nbsp;Youjun Lu","doi":"10.1007/s10854-024-13699-7","DOIUrl":"10.1007/s10854-024-13699-7","url":null,"abstract":"<div><p>The negative temperature coefficient (NTC) thermistor, known for its high sensitivity and rapid response, plays a crucial role in various sectors such as the national economy, military, and aerospace. Linear NTC thermistors can simplify circuit design, but most linear NTC thermistors used today use expensive, heavy, and harmful metals. As such, researching environmentally friendly NTC thermistors with linear temperature resistance characteristics is crucial for environmental protection and advancement of high-performance electronic ceramics. This paper discusses the synthesis of environmentally friendly linear thermistor materials in the <i>x</i>Al<sub>2</sub>O<sub>3</sub>-(1-<i>x</i>)ZnO composite using the solid-phase reaction method. By introducing the high-resistance phase Al<sub>2</sub>O<sub>3</sub>, a three-dimensional conductive composite of ZnAl<sub>2</sub>O<sub>4</sub> and ZnO was formed. This composite exhibited excellent linear negative temperature coefficient resistance–temperature characteristics spanning from 343 to 513 K. The highest linearity (<i>R</i><sup>2</sup> = 0.9984) was observed when <i>x</i> = 0.05.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on the damage characteristics of high-temperature superconducting cable insulation under air gap discharge 高温超导电缆绝缘在气隙放电下的损坏特性研究
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-31 DOI: 10.1007/s10854-024-13642-w
Xin Pan, Li Zhou, Gang Wang, Ahmed M. Fallatah, Miaoda Yuan, Xiangning Zhang, Daqing Tan, Juanna Ren, Abdulraheem S. A. Almalki, Mohamed M. Ibrahim, Mengyao Dong, Zhanhu Guo
{"title":"Study on the damage characteristics of high-temperature superconducting cable insulation under air gap discharge","authors":"Xin Pan,&nbsp;Li Zhou,&nbsp;Gang Wang,&nbsp;Ahmed M. Fallatah,&nbsp;Miaoda Yuan,&nbsp;Xiangning Zhang,&nbsp;Daqing Tan,&nbsp;Juanna Ren,&nbsp;Abdulraheem S. A. Almalki,&nbsp;Mohamed M. Ibrahim,&nbsp;Mengyao Dong,&nbsp;Zhanhu Guo","doi":"10.1007/s10854-024-13642-w","DOIUrl":"10.1007/s10854-024-13642-w","url":null,"abstract":"<div><p>This study explores the impact of small air gaps in high-temperature superconducting cables on the insulating material polypropylene-laminated paper (PPLP), and the aging rules and mechanisms of the insulating material during practical uses. An air gap discharge test platform was built to simulate air gap fault defects of superconducting cables in the real operating environment. Hierarchical clustering method was used to divide the gap discharge process of defect model into four stages. Insulation damage assessment was conducted on the intermediate layer PP of the superconducting insulation material PPLP at different discharge stages, revealing surface changes and periodic alterations in dielectric properties. The morphological features, roughness, infrared spectra, dielectric loss, surface resistivity, and other phase characteristics of the superconducting insulation layer material were analyzed at different stages of air gap defects. Molecular group cracking in PP was attributed to the bond breakage on the main chain. These findings provide insights into high-temperature superconducting cable insulation under air gap discharge and provide a guideline for practical applications in semi-conductive industries.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13642-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of single-crystal VO2(M) by RF magnetron sputtering 射频磁控溅射法制备单晶 VO2(M) 的电学特性
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-31 DOI: 10.1007/s10854-024-13754-3
Jing Wang, Yunpeng Dai, Jiaming Yu, Ying Wang, Dongsheng Chen
{"title":"Electrical properties of single-crystal VO2(M) by RF magnetron sputtering","authors":"Jing Wang,&nbsp;Yunpeng Dai,&nbsp;Jiaming Yu,&nbsp;Ying Wang,&nbsp;Dongsheng Chen","doi":"10.1007/s10854-024-13754-3","DOIUrl":"10.1007/s10854-024-13754-3","url":null,"abstract":"<div><p>A metastable mixed thin film of VO<sub>2</sub>(A) and VO<sub>2</sub>(B) was prepared on a quartz glass substrate using radio frequency magnetron sputtering method and V as the target material. After annealing above 520 °C in a tube furnace, the mixed thin film transformed from VO<sub>2</sub>(A) and VO<sub>2</sub>(B) to VO<sub>2</sub>(M). We studied the effects of different annealing temperatures on the surface morphology, structure, electrical properties, and V valence state distribution of VO<sub>2</sub>(M). Using XRD patterns, the phase composition of VO<sub>2</sub> before and after annealing can be distinguished. Through EDX and XPS spectroscopic measurements, the elemental composition (V, O, Si) on the surface of VO<sub>2</sub>(M) can be identified, and the proportion of different valence state V elements (V<sup>3+</sup>, V<sup>4+</sup>, V<sup>5+</sup>) can be estimated. According to atomic force microscopy, the surface roughness of the annealed sample has been improved compared to before annealing. X-ray diffraction confirms that high-temperature annealing leads to the transformation of VO<sub>2</sub>(A) and VO<sub>2</sub>(B) into VO<sub>2</sub>(M). Scanning electron microscopy is used to observe the nanoscale characteristics of VO<sub>2</sub>, indicating significant differences in its structure before and after annealing, especially at high annealing temperatures. After annealing at 540 °C, the temperature resistivity measurement results showed that the difference in resistivity of the film before and after phase transition reached nearly 1000 times, demonstrating excellent electrical performance. When the annealing temperature is further increased to 550 °C, the difference in resistivity caused by phase transformation decreases. Compared with samples annealed at different temperatures, the VO<sub>2</sub>(M) thin film annealed at 540 °C showed the maximum change in electrical resistivity after phase transition.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploration of physical properties of DC magnetron sputtered titania thin films and performance evaluation of Au/titania-based ultraviolet photodetectors 直流磁控溅射二氧化钛薄膜的物理性质探索和基于金/二氧化钛的紫外线光电探测器的性能评估
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-31 DOI: 10.1007/s10854-024-13752-5
K. A. Jagadish, Dhananjaya Kekuda
{"title":"Exploration of physical properties of DC magnetron sputtered titania thin films and performance evaluation of Au/titania-based ultraviolet photodetectors","authors":"K. A. Jagadish,&nbsp;Dhananjaya Kekuda","doi":"10.1007/s10854-024-13752-5","DOIUrl":"10.1007/s10854-024-13752-5","url":null,"abstract":"<div><p>The present work demonstrates the impact of oxygen flow rates on various properties of TiO<sub>2</sub> thin films grown using DC magnetron sputtering. The XRD studies verified the materials' polycrystalline nature. Surface roughness variation with oxygen flow rate was noticed using AFM analysis. The optical energy bandgap was found to vary between 3.42 and 3.75 eV. The electrical and photo-sensing properties of the TiO<sub>2</sub> layer were thoroughly examined. The constructed Au/TiO<sub>2</sub> junction exhibited a Schottky barrier with a three-order rectification ratio recorded under dark mode. The sensor parameters such as responsivity, detectivity, response time, and linear dynamic range were carefully studied. Under UV (395 nm, 0.5 mW/cm<sup>2</sup>) irradiation, the diode fabricated at 18% of oxygen flow rate (Au/TiO<sub>2</sub>-18/ITO) had a photoresponsivity of 0.209 A/W and a steady photo detectivity of 4.03 × 10<sup>10</sup> Jones at room temperature. Remarkably, a response time of 520/133 ms was reported. Thus, our findings indicate that Au/TiO<sub>2</sub> Schottky diodes might be beneficial for visible, transparent UV photosensors in future optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction: Structural and shielding effectiveness properties of (NiFe2O4/chopped strands) composites for 6.5–18 GHz applications 更正:用于 6.5-18 千兆赫应用的(NiFe2O4/切股)复合材料的结构和屏蔽效能特性
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-30 DOI: 10.1007/s10854-024-13719-6
Ethem İlhan Sahin, Jamal-Eldin F. M. Ibrahim, Mehriban Emek, Bahaddin Sinsoysal, Alina Amanzholova
{"title":"Correction: Structural and shielding effectiveness properties of (NiFe2O4/chopped strands) composites for 6.5–18 GHz applications","authors":"Ethem İlhan Sahin,&nbsp;Jamal-Eldin F. M. Ibrahim,&nbsp;Mehriban Emek,&nbsp;Bahaddin Sinsoysal,&nbsp;Alina Amanzholova","doi":"10.1007/s10854-024-13719-6","DOIUrl":"10.1007/s10854-024-13719-6","url":null,"abstract":"","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13719-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of tartrazine sensor using zinc oxide/graphitic carbon nitride modified glassy carbon electrode 使用氧化锌/石墨化氮化碳修饰的玻璃碳电极制造酒石酸传感器
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-30 DOI: 10.1007/s10854-024-13725-8
Khursheed Ahmad, Mohd Quasim Khan, Rais Ahmad Khan, Iti Dhakad
{"title":"Fabrication of tartrazine sensor using zinc oxide/graphitic carbon nitride modified glassy carbon electrode","authors":"Khursheed Ahmad,&nbsp;Mohd Quasim Khan,&nbsp;Rais Ahmad Khan,&nbsp;Iti Dhakad","doi":"10.1007/s10854-024-13725-8","DOIUrl":"10.1007/s10854-024-13725-8","url":null,"abstract":"<div><p>Tartrazine (Tz) is well-known synthetic dye and widely used in food industry. Despite its potential applications, Tz has some negative impacts on human beings due to the presence of toxicity and pathogenicity. Thus, it becomes essential to determine and keep an eye on the precise quantification of Tz. Electrochemical method-based sensors have received enormous attention because of their fast processing and response. In this work, we have synthesized ZnO rods under a simple synthesis approach. Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) was synthesized using melamine precursor whereas the composite of ZnO@g-C<sub>3</sub>N<sub>4</sub> was obtained by a simple room temperature stirring of ZnO and g-C<sub>3</sub>N<sub>4</sub>. The as fabricated ZnO, g-C<sub>3</sub>N<sub>4</sub>, and composite of ZnO@g-C<sub>3</sub>N<sub>4</sub> were carefully identified by various sophisticated instrumentation techniques viz., powder X-ray diffraction (PXRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. These synthesized g-C<sub>3</sub>N<sub>4</sub>, ZnO, and ZnO@g-C<sub>3</sub>N<sub>4</sub> composite have been used for the modification of glassy carbon electrode (GCE) and designated as MGE-2, MGE-3, and MGE-4, respectively, whereas bare GC electrode has been designated as MGE-1. For evaluating the electrochemical sensing performance of the modified electrodes MGE-2, MGE-3, and MGE-4, differential pulse voltammetry (DPV) method has been used. The MGE-4 exhibited the reasonably good detection limit of 0.03 µM and sensitivity of 1.57 µA µM<sup>−1</sup> cm<sup>−2</sup>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synergistic effects in PPS/PVA/Fe3O4/Ag NPs nanocomposites for enhanced photocatalytic degradation of methylene blue 增强亚甲基蓝光催化降解的 PPS/PVA/Fe3O4/Ag NPs 纳米复合材料的协同效应
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-30 DOI: 10.1007/s10854-024-13727-6
Akram Afshari Kaveh, Alireza Mohadesi, Mohammad Ali Karimi, Sheida Ahmadi
{"title":"Synergistic effects in PPS/PVA/Fe3O4/Ag NPs nanocomposites for enhanced photocatalytic degradation of methylene blue","authors":"Akram Afshari Kaveh,&nbsp;Alireza Mohadesi,&nbsp;Mohammad Ali Karimi,&nbsp;Sheida Ahmadi","doi":"10.1007/s10854-024-13727-6","DOIUrl":"10.1007/s10854-024-13727-6","url":null,"abstract":"<div><p>This study investigates the synthesis and application of PPS/PVA/Fe<sub>3</sub>O<sub>4</sub>/AgNPs nanocomposites for the photocatalytic degradation of methylene blue (MB) under visible light. The nanocomposite was synthesized through a co-precipitation method combining polyphenylene sulfide (PPS), polyvinyl alcohol (PVA), iron oxide (Fe<sub>3</sub>O<sub>4</sub>), and silver nanoparticles (AgNPs). Structural analysis confirmed the successful formation of the nanocomposite with enhanced surface area, porosity, and stability. The photocatalytic performance was evaluated by monitoring the degradation of MB, showing that the PPS/PVA/Fe<sub>3</sub>O<sub>4</sub>/AgNPs nanocomposite achieved an 83% degradation rate within 120 min of visible light exposure. Kinetic studies indicated that the degradation followed a pseudo-first-order model, with the highest apparent rate constant (90 × 10⁻<sup>4</sup> min⁻<sup>1</sup>) observed for the nanocomposite. Additionally, the total organic carbon (TOC) analysis demonstrated substantial mineralization of MB, with the concentration decreasing from 10 to 1.9 mg/L. The enhanced photocatalytic activity is attributed to the synergistic effects of the nanocomposite, including improved light absorption, reduced electron-hole recombination, and increased active sites for redox reactions. Reusability tests confirmed the durability of the nanocomposite, with only a slight decrease in efficiency (5%) after four cycles. This study highlights the potential of PPS/PVA/Fe<sub>3</sub>O<sub>4</sub>/AgNPs nanocomposites as effective photocatalysts for environmental remediation, particularly in the treatment of dye-contaminated water.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparative study between PANI, PANI/PbS and PANI/PbS/ZnO core/shell quantum dots as chemiresistive sensor for the detection of formaldehyde gas 将 PANI、PANI/PbS 和 PANI/PbS/ZnO 核/壳量子点作为化学电阻式传感器检测甲醛气体的比较研究
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-30 DOI: 10.1007/s10854-024-13715-w
Sultana Rijuwana Haque, Pallabi Boro, Pratyush Phukan, Suparna Bhattacharjee
{"title":"A comparative study between PANI, PANI/PbS and PANI/PbS/ZnO core/shell quantum dots as chemiresistive sensor for the detection of formaldehyde gas","authors":"Sultana Rijuwana Haque,&nbsp;Pallabi Boro,&nbsp;Pratyush Phukan,&nbsp;Suparna Bhattacharjee","doi":"10.1007/s10854-024-13715-w","DOIUrl":"10.1007/s10854-024-13715-w","url":null,"abstract":"<div><p>PANI, PANI/PbS and PANI/PbS/ZnO quantum dots have been prepared using a chemical synthesis technique. The prepared products were characterized by characterization techniques like—UV–vis spectroscopy, PL spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-rays (EDAX), transmission electron microscopy (TEM) and thermo-gravimetric analysis (TGA). After analysing the samples, a comparative study has been done among pure PANI, the selected PANI/PbS core and one PANI/PbS/ZnO core/shell composite sample for application in the field of gas sensing. The room-temperature gas response towards gases like acetone, ammonia, methanol, formaldehyde and ethanol is investigated and found that the sensor is more selective towards formaldehyde gas/vapour. The maximum gas response is found to be ~ 36.59% for pure PANI, ~ 528% for PANI/PbS and ~ 36.47% for PANI/PbS/ZnO core/shell nanocomposite sample as sensing agent upon exposure of 100 ppm of formaldehyde gas at room temperature. The variation of response and recovery times of all the sensing materials has also been studied. Among the three synthesized samples, the best sensing agent for the detection of formaldehyde gas has been selected on the basis of multiple factors which are discussed in the conclusion section.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the impact of gadolinium substitution on the impedance and conduction mechanism of barium zirconium titanate ceramics 了解钆替代对锆钛酸钡陶瓷阻抗和传导机制的影响
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-29 DOI: 10.1007/s10854-024-13741-8
G. Nag Bhargavi, T. Badapanda, M. Shahid Anwar, Mehdi Tlija, H. Joardar, Satya N. Tripathy
{"title":"Understanding the impact of gadolinium substitution on the impedance and conduction mechanism of barium zirconium titanate ceramics","authors":"G. Nag Bhargavi,&nbsp;T. Badapanda,&nbsp;M. Shahid Anwar,&nbsp;Mehdi Tlija,&nbsp;H. Joardar,&nbsp;Satya N. Tripathy","doi":"10.1007/s10854-024-13741-8","DOIUrl":"10.1007/s10854-024-13741-8","url":null,"abstract":"<div><p>In the present paper, we investigate the structural and electrical properties of gadolinium (Gd)-modified barium zirconate titanate (BZT) ceramics, i.e., Ba<sub>1-x</sub>Gd<sub>2x/3</sub>Zr<sub>0.05</sub>Ti<sub>0.95</sub>O<sub>3</sub> (BGZT; <i>x</i> = 0.01–0.05). The high-temperature solid-state reaction method has been used to synthesize the ceramics. The X-ray diffraction and Rietveld refinement analysis show the existence of dual-phase tetragonal (P4mm) and orthogonal (Amm2) in all the compositions. In the XRD data, the peak shifts to a lower angle up to <i>x </i>= 0.03 and then toward the higher angle side indicating the doping at the A site for (<i>x</i> ≤ 0.03 and at the B site for higher concentration. The grain size is found to be reduced from around ~ 2 μm to ~ 0.5 μm with Gd doping. The real and imaginary impedance values increase to 0.8 MΩ for <i>x</i> = 0.03 and then reduce for higher concentrations. The complex impedance spectra indicate that the grain and the grain boundary resistance are decreasing with increasing concentrations of Gd until <i>x</i> = 0.03 with a minimum value of ~ 40kΩ (at 300 ℃) and then rising for higher concentrations. The excellent fitting of the Kohlrausch–Williams–Watts function to the dielectric modulus indicates the transition from long-range to short-range mobility of charge carriers. The temperature-dependent ac conductivity shows that the conductivity rises until <i>x</i> = 0.03 and then reduces due to the incorporation of Gd in the Ti site producing oxygen vacancies. The activation energy for both the conduction and relaxation processes was obtained using the Arrhenius plots. The activation energy for the relaxation process is less than ~ 0.5 eV and for the conduction process found to be more than ~ 0.5 eV indicating different hoping mechanisms are involved in the composition.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of energy storage performance of supercapacitors based on MoS2-g-C3N4 Nanocomposite electrodes 提高基于 MoS2-g-C3N4 纳米复合电极的超级电容器的储能性能
IF 2.8 4区 工程技术
Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-29 DOI: 10.1007/s10854-024-13744-5
M. Vidhya, T. M. Selvakumari, R. Marnadu, P. Rajapandi, M. Aslam Manthrammel, Mohd. Shkir
{"title":"Enhancement of energy storage performance of supercapacitors based on MoS2-g-C3N4 Nanocomposite electrodes","authors":"M. Vidhya,&nbsp;T. M. Selvakumari,&nbsp;R. Marnadu,&nbsp;P. Rajapandi,&nbsp;M. Aslam Manthrammel,&nbsp;Mohd. Shkir","doi":"10.1007/s10854-024-13744-5","DOIUrl":"10.1007/s10854-024-13744-5","url":null,"abstract":"<div><p>Two-dimensional materials are extremely beneficial for supercapacitors due to their unique morphological richness, larger area, and better conductivity. In addition, layered materials have more space between them, which allows for greater charge storage as well as ion transport and storage. In the present work, a facile approach is used to fabricate bare MoS<sub>2</sub> and MoS<sub>2</sub>-g-C<sub>3</sub>N<sub>4</sub>nanocomposites as an electrode material for high-performance supercapacitor electrodes. The synthesized samples were examined by XRD, HRTEM, FESEM, FTIR, and RAMAN Spectroscopy. From structural investigations, the sample was found to present both g-C<sub>3</sub>N<sub>4</sub> and MoS<sub>2</sub> in the same hexagonal phase. The typical porous morphology consisting of small nanorods and irregular shapes can be observed. The small peak appears at 467 cm<sup>−1</sup> which confirms the presence of a Mo–S bond. After the sample characterization of the nanocomposites, the electrochemical performance of the as-prepared MoS<sub>2</sub>-g-C<sub>3</sub>N<sub>4</sub> hybrid was evaluated by cyclic voltammetric study, Galvanostatic charge/ discharge, and electrochemical impedance techniques. During the optimized study in the three-electrode system, this attractive and MoS<sub>2</sub>-g-C<sub>3</sub>N<sub>4</sub> nanocomposite electrode exhibits the highest specific capacitance of 836 F g<sup>−1</sup> at a current density of 1 Ag<sup>−1</sup> and excellent cyclic stability with 94% of capacitance retention after 5000 repeated charge–discharge cycles. Further, this composite material sample has a very lesser value of R<sub>ct</sub> compared to other samples. We have assembled a two-electrode device using MoS<sub>2</sub>-g-C<sub>3</sub>N<sub>4</sub> which exhibits a specific capacitance of 198 F g<sup>−1</sup> with an energy density of 39.6 Wh kg<sup>−1</sup>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信