{"title":"Preparation and optical/electrical properties of vanadium pentoxide films on fluorine-doped SnO2 (FTO) substrates through sol–gel route","authors":"Bao-jia Li, Fan Wang, Yu Shi, Hui-min Zhang, Jia-jun Ruan, Li-jing Huang","doi":"10.1007/s10854-025-14802-2","DOIUrl":null,"url":null,"abstract":"<div><p>V<sub>2</sub>O<sub>5</sub> films were formed via sol–gel spin coating and thermal annealing with fluorine-doped SnO<sub>2</sub> (FTO) glass as substrates. The impacts of annealing temperature, time and spin-coating number on surface morphology, structure and optical/electrical properties of V<sub>2</sub>O<sub>5</sub>/FTO composite films were mainly studied. The results demonstrated that increasing annealing temperature, time and spin-coating number could contribute to increases in the film compactness, grain size and crystallinity, but too high temperatures or too long times would degrade the film compactness, and too large spin-coating numbers would cause grain/particle agglomeration and cracking phenomena. The film transmittance and sheet resistance depended on the combined effect of these factors. It was determined that a uniform and compact V<sub>2</sub>O<sub>5</sub> film could be formed on the FTO substrate under spin-coating four times and annealing at 400 °C for 60 min. The as-obtained composite film exhibited ideal optical/electrical properties, with an average transmittance (600–1100 nm) of 73.83%, a sheet resistance of 25.42 kΩ/sq, an optical band gap energy of 2.751 eV and an average transmittance (1250–1600 nm) change amplitude of 14.2% before and after phase transition that accompanied by a reversible thermotropic color change from yellow to orange. This work offers useful insights for preparing V<sub>2</sub>O<sub>5</sub>-based composite films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14802-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
V2O5 films were formed via sol–gel spin coating and thermal annealing with fluorine-doped SnO2 (FTO) glass as substrates. The impacts of annealing temperature, time and spin-coating number on surface morphology, structure and optical/electrical properties of V2O5/FTO composite films were mainly studied. The results demonstrated that increasing annealing temperature, time and spin-coating number could contribute to increases in the film compactness, grain size and crystallinity, but too high temperatures or too long times would degrade the film compactness, and too large spin-coating numbers would cause grain/particle agglomeration and cracking phenomena. The film transmittance and sheet resistance depended on the combined effect of these factors. It was determined that a uniform and compact V2O5 film could be formed on the FTO substrate under spin-coating four times and annealing at 400 °C for 60 min. The as-obtained composite film exhibited ideal optical/electrical properties, with an average transmittance (600–1100 nm) of 73.83%, a sheet resistance of 25.42 kΩ/sq, an optical band gap energy of 2.751 eV and an average transmittance (1250–1600 nm) change amplitude of 14.2% before and after phase transition that accompanied by a reversible thermotropic color change from yellow to orange. This work offers useful insights for preparing V2O5-based composite films.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.