Preparation and optical/electrical properties of vanadium pentoxide films on fluorine-doped SnO2 (FTO) substrates through sol–gel route

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Bao-jia Li, Fan Wang, Yu Shi, Hui-min Zhang, Jia-jun Ruan, Li-jing Huang
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Abstract

V2O5 films were formed via sol–gel spin coating and thermal annealing with fluorine-doped SnO2 (FTO) glass as substrates. The impacts of annealing temperature, time and spin-coating number on surface morphology, structure and optical/electrical properties of V2O5/FTO composite films were mainly studied. The results demonstrated that increasing annealing temperature, time and spin-coating number could contribute to increases in the film compactness, grain size and crystallinity, but too high temperatures or too long times would degrade the film compactness, and too large spin-coating numbers would cause grain/particle agglomeration and cracking phenomena. The film transmittance and sheet resistance depended on the combined effect of these factors. It was determined that a uniform and compact V2O5 film could be formed on the FTO substrate under spin-coating four times and annealing at 400 °C for 60 min. The as-obtained composite film exhibited ideal optical/electrical properties, with an average transmittance (600–1100 nm) of 73.83%, a sheet resistance of 25.42 kΩ/sq, an optical band gap energy of 2.751 eV and an average transmittance (1250–1600 nm) change amplitude of 14.2% before and after phase transition that accompanied by a reversible thermotropic color change from yellow to orange. This work offers useful insights for preparing V2O5-based composite films.

溶胶-凝胶法制备掺氟SnO2 (FTO)衬底五氧化二钒薄膜及其光电性能
以掺氟SnO2 (FTO)玻璃为衬底,采用溶胶-凝胶自旋镀膜和热退火法制备了V2O5薄膜。主要研究了退火温度、时间和旋涂次数对V2O5/FTO复合薄膜表面形貌、结构和光电性能的影响。结果表明:增加退火温度、时间和旋涂次数可以提高薄膜的致密性、晶粒尺寸和结晶度,但温度过高或时间过长会降低薄膜的致密性,而旋涂次数过大则会导致晶粒/颗粒团聚和开裂现象。薄膜透光率和片材电阻取决于这些因素的综合作用。结果表明,在FTO衬底上经过4次旋转镀膜和400℃60 min退火,可以形成均匀致密的V2O5薄膜。所制备的复合薄膜具有理想的光学/电学性能,平均透过率(600 ~ 1100 nm)为73.83%,片电阻为25.42 kΩ/sq。光带隙能量为2.751 eV,平均透过率(1250 ~ 1600 nm)在相变前后变化幅度为14.2%,并伴有由黄色到橙色的可逆热致变色。这项工作为制备v2o5基复合薄膜提供了有用的见解。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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