Energy storage properties and enhanced breakdown strength of calcium-doped barium zirconate titanate thin films prepared by the sol–gel method

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xing Zhang, Chen Zhang, Haoliang Li, Zhipeng Ma, Jingwang Lu, Ke Zhang
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引用次数: 0

Abstract

Calcium (Ca2+)-doped BZT thin films, Ba1-xCax Zr0.2Ti0.8O3 (x = 0, 0.05, 0.1, 0.15 and 0.2), were synthesized on the Pt/Ti/SiO2/Si substrates via sol–gel spin-coating techniques for pulse capacitor applications. The microstructures, ferroelectric properties and energy storage performance of Ba1-xCaxZr0.2Ti0.8O3 thin films were characterized while adjusting the Ca2+ concentration. It is found that the Ca2+-doped BZT thin films exhibit single-phase perovskite structure. On increasing the Ca2+ concentration, the cell volume and tolerance factor declined due to the replacement of Ca2+ ions for the A-site ions in the BZT lattice. The average grain size and root-mean-square (RMS) roughness of Ba1-xCax Zr0.2Ti0.8O3 thin films with dense and uniform microstructure is refined to 44 nm and 1.55nm, respectively, with Ca2+ increasing up to x = 0.15. While lowering the leakage current density after Ca2+ modification, the breakdown field strength of Ca2+-doped BZT thin films is improved significantly approaching 4210 kV/cm at x = 0.15. Because of the enlarged polarization difference (PmPr), the nano grain Ba0.85Ca0.15 Zr0.2Ti0.8O3 thin film possesses an elevated energy storage density of 33.1 J/cm3 and an acceptable energy storage efficiency of 62.1% at the ultrahigh breakdown field. The Ca-doped BZT films also have remarkable cycle reliability showing a significant potential for capacitor applications.

溶胶-凝胶法制备掺钙锆钛酸钡薄膜的储能性能和增强击穿强度
采用溶胶-凝胶自旋镀膜技术,在Pt/Ti/SiO2/Si衬底上合成了钙(Ca2+)掺杂BZT薄膜Ba1-xCax Zr0.2Ti0.8O3 (x = 0、0.05、0.1、0.15和0.2),用于脉冲电容器。通过调节Ca2+浓度,对Ba1-xCaxZr0.2Ti0.8O3薄膜的微观结构、铁电性能和储能性能进行了表征。发现Ca2+掺杂的BZT薄膜表现为单相钙钛矿结构。当Ca2+浓度增加时,细胞体积和耐受性因子下降,这是由于Ca2+离子取代了BZT晶格中的a位离子。当Ca2+浓度增加到x = 0.15时,Ba1-xCax Zr0.2Ti0.8O3薄膜的平均晶粒尺寸和均方根粗糙度分别细化到44 nm和1.55nm。在降低Ca2+修饰后的漏电流密度的同时,在x = 0.15时,Ca2+掺杂的BZT薄膜击穿场强明显提高,接近4210 kV/cm。由于极化差(Pm-Pr)的增大,纳米晶粒Ba0.85Ca0.15 Zr0.2Ti0.8O3薄膜在超高击穿场下的储能密度提高到33.1 J/cm3,储能效率为62.1%。掺钙BZT薄膜也具有显著的循环可靠性,显示出电容器应用的巨大潜力。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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