{"title":"Energy storage properties and enhanced breakdown strength of calcium-doped barium zirconate titanate thin films prepared by the sol–gel method","authors":"Xing Zhang, Chen Zhang, Haoliang Li, Zhipeng Ma, Jingwang Lu, Ke Zhang","doi":"10.1007/s10854-025-14810-2","DOIUrl":null,"url":null,"abstract":"<div><p>Calcium (Ca<sup>2+</sup>)-doped BZT thin films, Ba<sub>1-x</sub>Ca<sub>x</sub> Zr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15 and 0.2), were synthesized on the Pt/Ti/SiO<sub>2</sub>/Si substrates via sol–gel spin-coating techniques for pulse capacitor applications. The microstructures, ferroelectric properties and energy storage performance of Ba<sub>1-x</sub>Ca<sub>x</sub>Zr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> thin films were characterized while adjusting the Ca<sup>2+</sup> concentration. It is found that the Ca<sup>2+</sup>-doped BZT thin films exhibit single-phase perovskite structure. On increasing the Ca<sup>2+</sup> concentration, the cell volume and tolerance factor declined due to the replacement of Ca<sup>2+</sup> ions for the A-site ions in the BZT lattice. The average grain size and root-mean-square (RMS) roughness of Ba<sub>1-x</sub>Ca<sub>x</sub> Zr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> thin films with dense and uniform microstructure is refined to 44 nm and 1.55nm, respectively, with Ca<sup>2+</sup> increasing up to <i>x</i> = 0.15. While lowering the leakage current density after Ca<sup>2+</sup> modification, the breakdown field strength of Ca<sup>2+</sup>-doped BZT thin films is improved significantly approaching 4210 kV/cm at <i>x</i> = 0.15. Because of the enlarged polarization difference (<i>P</i><sub>m</sub>–<i>P</i><sub>r</sub>), the nano grain Ba<sub>0.85</sub>Ca<sub>0.15</sub> Zr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> thin film possesses an elevated energy storage density of 33.1 J/cm<sup>3</sup> and an acceptable energy storage efficiency of 62.1% at the ultrahigh breakdown field. The Ca-doped BZT films also have remarkable cycle reliability showing a significant potential for capacitor applications. </p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14810-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Calcium (Ca2+)-doped BZT thin films, Ba1-xCax Zr0.2Ti0.8O3 (x = 0, 0.05, 0.1, 0.15 and 0.2), were synthesized on the Pt/Ti/SiO2/Si substrates via sol–gel spin-coating techniques for pulse capacitor applications. The microstructures, ferroelectric properties and energy storage performance of Ba1-xCaxZr0.2Ti0.8O3 thin films were characterized while adjusting the Ca2+ concentration. It is found that the Ca2+-doped BZT thin films exhibit single-phase perovskite structure. On increasing the Ca2+ concentration, the cell volume and tolerance factor declined due to the replacement of Ca2+ ions for the A-site ions in the BZT lattice. The average grain size and root-mean-square (RMS) roughness of Ba1-xCax Zr0.2Ti0.8O3 thin films with dense and uniform microstructure is refined to 44 nm and 1.55nm, respectively, with Ca2+ increasing up to x = 0.15. While lowering the leakage current density after Ca2+ modification, the breakdown field strength of Ca2+-doped BZT thin films is improved significantly approaching 4210 kV/cm at x = 0.15. Because of the enlarged polarization difference (Pm–Pr), the nano grain Ba0.85Ca0.15 Zr0.2Ti0.8O3 thin film possesses an elevated energy storage density of 33.1 J/cm3 and an acceptable energy storage efficiency of 62.1% at the ultrahigh breakdown field. The Ca-doped BZT films also have remarkable cycle reliability showing a significant potential for capacitor applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.