Journal of Materials Science: Materials in Electronics最新文献

{"title":"Type‑I heterostructure based on ReSe2/PtS2 for self-powered and broadband UV–NIR photodetectors","authors":"Wei Chen,&nbsp;Qinggang Qin,&nbsp;Kunxuan Liu,&nbsp;Xiaofei Ma,&nbsp;Xue Liu,&nbsp;Zhengyu Xu,&nbsp;Lin Wu,&nbsp;Zhifan Qiu,&nbsp;Xiaodi Luo,&nbsp;Jiahao Li,&nbsp;Yuen Hong Tsang,&nbsp;Liang Li","doi":"10.1007/s10854-025-15838-0","DOIUrl":"10.1007/s10854-025-15838-0","url":null,"abstract":"<div><p>Immense potential has been demonstrated by photodetectors based on two-dimensional (2D) van der Waals heterostructures (vdWHs), positioning them as a transformative technology for numerous applications in modern nanotechnology. However, 2D vdWHs photodetectors based on photoconductive effects require an external power input and are often accompanied by a large dark current, which hinders the development of miniaturization and portability of devices and greatly limits the application of devices in complex environments. In this paper, a type-Ι self-powered polarization-sensitive photodetector based on ReSe₂/PtS₂ van der Waals heterojunction is constructed, which has excellent photovoltaic characteristics. The type-I band alignment facilitates the collection of photogenerated holes from the ReSe₂ layer by the PtS₂ layer, thereby inhibiting carrier recombination. Enabled by the strong built-in electric field, a self-powered photoresponse with a wide spectrum from 365 to 1064 nm is realized. At zero bias voltage, the device achieves a high detectivity of 1.96 × 10¹¹ Jones and a high light on/off ratio of over 10⁴ under the irradiation of 685 nm light. It also has a fast response speed of 4/4 ms and the photocurrent anisotropy ratio reaches 1.2 at 638 nm light. In addition, we verified the device’s polarization imaging capability. This work paves the way for the development of high-performance type-Ι photodetectors with self-powered polarization-sensitive light detection and polarization imaging capabilities.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance optimization of solution-based Cu₂SnS₃ thin-film solar cells via sulfurization process","authors":"Guldone Toplu,&nbsp;Done Ozbek,&nbsp;Meryem Cam,&nbsp;Ali Altuntepe,&nbsp;Kasim Ocakoglu,&nbsp;Sakir Aydogan,&nbsp;Yavuz Atasoy,&nbsp;M. Ali Olgar,&nbsp;Recep Zan","doi":"10.1007/s10854-025-15864-y","DOIUrl":"10.1007/s10854-025-15864-y","url":null,"abstract":"<div><p>Thin-film solar cells, particularly those which are earth-abundant and non-toxic, present a promising solution to the growing global energy demand by offering sustainable, cost-effective, and environmentally friendly alternatives to conventional silicon-based photovoltaic technologies. In this study, we focus on Cu₂SnS₃ (CTS) thin films, fabricated using the sol–gel technique, to address efficiency challenges by exploring the impact of varying sulfurization times and annealing temperatures on film quality and device performance. Glass substrates were prepared and spin-coated with a precursor solution, followed by drying and sulfurization using Rapid Thermal Processing (RTP) at temperatures of 500 °C, 525 °C, and 550 °C for 1 min. Then, sulfurization time (1, 3, 5 min.) was investigated at 525 °C sulfurization temperature. Comprehensive characterization, including XRD, Raman spectroscopy, and SEM, was conducted to analyze the structural, morphological, and optical properties of the films. Results indicated that a sulfurization temperature of 525 °C for 3 min yielded the most desirable crystal size, strain values, and a homogeneous monoclinic structure. The best-performing CTS solar cells achieved a conversion efficiency of 2.1% under these optimal conditions. The photovoltaic performance of the fabricated CTS solar cells, assessed through conversion efficiencies under varying sulfurization conditions, underscores the critical role of sulfurization time and temperature in optimizing CTS thin films, ultimately aiming to narrow the gap between experimental and theoretical efficiency limits.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in fabrication techniques for porous GaN: a review of methods and applications","authors":"Yuganesini Naidu Siva Kumar,&nbsp;Rahil Izzati Mohd Asri,&nbsp;Muhammad Ramzan,&nbsp;Sabah M. Mohammad,&nbsp;Dian Alwani Zainuri,&nbsp;Mundzir Abdullah","doi":"10.1007/s10854-025-15728-5","DOIUrl":"10.1007/s10854-025-15728-5","url":null,"abstract":"<div><p>Gallium nitride (GaN) is recognized for its exceptional material properties that support the design of both high-efficiency optoelectronic and high-performance power devices. Yet, its widespread application still faces bottlenecks, including poor light extraction due to total internal reflection, strain accumulation from lattice and thermal mismatches, and defect-induced performance degradation. The porosity structures within GaN can tackle these challenges by enhancing light out-coupling, accommodating strain relaxation during epitaxial growth, and providing quantum confinement and improved thermal management. This review discusses the advances in wet etching methods, particularly electrochemical (EC), metal-assisted chemical etching (MacEtch), and photoelectrochemical (PEC) etching for tailoring porous GaN morphologies. The intricate interplay between doping levels, applied bias, electrolyte concentration, and illumination conditions is analyzed to clarify their effects on pore size distribution, uniformity, and resultant optical behavior. A significant contribution of this work is the proposal of a systematic, morphology-specific framework that optimizes PEC etching parameters for achieving targeted porous structures, addressing the lack of standardized protocols across studies. In addition, this paper highlights unresolved challenges such as unintended porosity, surface oxidation, and post-etch contamination, and summarizes mitigation strategies reported to date. By positioning these insights within the broader context of emerging applications, including advanced light emitters, sensors, energy devices, and biointerfaces, this review underscores the versatile potential of porous GaN when fabricated under controlled, well-optimized conditions. Ultimately, this work intends to guide future efforts toward more reliable, scalable, and application-specific porous GaN technologies that can better leverage the unique advantages of this material platform for next-generation photonic and nanoelectronics systems.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-15728-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adapting of the linear/nonlinear optical and dielectric features of PVA/CMC/x wt% ZnAl2O4/ZnO blended polymers for optoelectronic and capacitive energy storage uses","authors":"A. M. El-naggar,&nbsp;A. M. Kamal,&nbsp;A. A. Albassam","doi":"10.1007/s10854-025-15874-w","DOIUrl":"10.1007/s10854-025-15874-w","url":null,"abstract":"<div><p>In current work, blended polymer films have been prepared from ZnAl₂O₄/ZnO nanocomposite loaded polyvinyl alcohol (PVA)/carboxymethyl cellulose (CMC) blended polymer to exploit the uses of the formed materials in diverse optoelectronic and capacitive energy storage uses. The structure crystallite size and morphology of the filler sample were explored. The influence of filler amount on the crystallinity of the host PVA/CMC blended polymer was detected. The optical absorbance improvement or decline was contingent upon the wavelength range and/or the quantity of filler. The sample doped with 8 wt% ZnAl₂O₄/ZnO nanocomposite has the greatest absorbance in the visible region. The direct and indirect optical band gap energy values increased as the ZnAl₂O₄/ZnO nanocomposite concentration reached 2 wt% and they subsequently decreased as the amount of ZnAl₂O₄/ZnO nanocomposite in the polymer matrix grew. Doping the host blend with 8 wt% ZnAl₂O₄/ZnO nanocomposite only enhanced its refractive index (1.72). The <i>k</i> values of the loaded composite polymers were either greater than or less than that of the undoped sample, relying on the dopant level and/or the wavelength range. The influence of doping amount and the wavelength range on the linear/nonlinear optical parameters were examined. The dielectric constant (16 at 1 kHz) and AC conductivity attained their uppermost value at 2 wt% filler content, subsequently declining with more doping. The sample with 2 wt% ZnAl₂O₄/ZnO nanocomposite has a greater capacitive nature. The insertion of ZnAl₂O₄/ZnO nanocomposite filler into the PVA/CMC polymer affected the Nyquist plot.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reduced graphene oxide/polyaniline hydrogel-based piezo pressure sensor for biomedical applications","authors":"Saranya Lakshmanan,&nbsp;Sreeja Balakrishnapillai Suseela,&nbsp;Radha Sankararajan","doi":"10.1007/s10854-025-15819-3","DOIUrl":"10.1007/s10854-025-15819-3","url":null,"abstract":"<div><p>Flexible piezo-actuated pressure sensors play a crucial role in enhancing healthcare diagnostics, particularly for monitoring muscle activity and detecting abnormalities. This work reports on reduced graphene oxide and polyaniline composite (rGO-PANI) hydrogel-based pressure sensor offering high sensitivity, flexibility, and durability. A simple solvent casting method along with hydrothermal process was employed to fabricate a unique combination of rGO-PANI with reliable polymers of PVA and PVP that achieves piezoelectric and piezoresistive nature of a soft, highly stable, stretchable piezo-sensitive pressure sensor. SEM, XRD, FTIR, RAMAN, TGA–DSC patterns of rGO-PANI hydrogel pressure sensor help to investigate the material characteristics of piezo conductive nature of reduced graphene oxide and polyaniline. Sensor’s performance is experimentally calculated and observed with promising sensitivity value, pressure sensing range with good linearity response that proves piezo property of the pressure sensor. This hybrid-composite conductive hydrogel pressure sensor can be easily placed on skin detecting a range of voluntary and involuntary muscle movements and pressures of a human body that facilitates the advancement of sustainable wearables.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145169641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-temperature electronic packaging for power modules: advances in sintering and transient liquid phase bonding technologies","authors":"Kai Cao,&nbsp;Jianhao Wang,&nbsp;Zehou Li,&nbsp;Jing Zhang,&nbsp;Yang Liu","doi":"10.1007/s10854-025-15806-8","DOIUrl":"10.1007/s10854-025-15806-8","url":null,"abstract":"<div><p>The increasing demand for enhanced thermal stability and power density in electric vehicle (EV) power modules presents challenges for conventional packaging technologies, including inadequate thermal conductivity, limited high-temperature reliability, and suboptimal environmental compatibility. This review systematically summarizes recent advances in two pivotal high-temperature electronic packaging technologies: sintering and transient liquid phase (TLP) bonding. It examines microstructural regulation mechanisms in silver (Ag), copper (Cu), and nickel (Ni)-based sintering materials for power module applications. The analysis covers the effects of particle size, morphology, and solvent selection on sintering density, electrical and thermal conductivity, and mechanical strength. A comparative assessment of advanced processes such as pressure sintering, pressureless sintering, and laser-assisted sintering is presented, focusing on their mechanisms for reducing porosity, mitigating oxidation, and enhancing interface bonding strength. Additionally, TLP bonding characteristics are explored, emphasizing its advantages in low-temperature connections and high-temperature performance via high-melting point intermetallic compounds. The findings show that sintering technology provides a robust solution for high-temperature packaging with superior thermal conductivity and mechanical strength, while TLP enhances high-temperature stability. Future research should optimize multimodal particle design, develop cost-effective, sustainable materials, and integrate processes like ultrasound and induction heating to expand these technologies' application in wide-bandgap semiconductor devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145170188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conductivity and dielectric relaxation of cross-linked polyvinyl alcohol reinforced by low amount of zinc oxide","authors":"Mourad Mbarek,&nbsp;Jihen Soli,&nbsp;Mahdi Hdidar,&nbsp;Arbi Fattoum,&nbsp;Mourad Arous,&nbsp;Elimame Elaloui","doi":"10.1007/s10854-025-15851-3","DOIUrl":"10.1007/s10854-025-15851-3","url":null,"abstract":"<div><p>This study reports the fabrication of cross-linked Poly(vinyl alcohol)/zinc oxide (XLPVA/ZnO) nanocomposite films with improved thermal and dielectric properties for potential use in flexible electronics and energy storage devices. The motivation lies in developing low-cost, flexible, and thermally stable dielectric materials by combining chemical cross-linking and nanoparticle reinforcement. ZnO nanoparticles were synthesized via a modified sol–gel method and incorporated into the PVA matrix at different weight percentages (<i>x</i> = 0, 1, 2, 4, and 6 wt%), following cross-linking with oxalic acid at a 20% degree. Structural analysis by XRD revealed increase in both crystallinity and crystallite size with increasing ZnO content from 16 to 27 nm. FTIR spectra confirmed successful ZnO incorporation, as evidenced by additional Zn–O vibrational bands at 475, 553, 578–579, and 670 cm⁻¹. Thermogravimetric analysis (TGA) showed improved thermal stability, with residual mass increasing from ~ 10% (<i>x</i> = 0 Wt%) to ~ 16% (<i>x</i> = 6 wt%). Dynamic mechanical analysis (DMA) revealed significant shifts in the <i>α</i>-relaxation peaks, observed at 40 °C/65 °C and 46 °C/71 °C for 4% and 6% ZnO, respectively, indicating reduced chain mobility due to polymer-filler interactions. Dielectric measurements (40 Hz–1 MHz) confirmed the disordered nature of the system, with AC conductivity following Jonscher’s power law. Activation energy values extracted from Arrhenius plots remained below 1 eV, consistent with ionic conduction. Modulus formalism further identified a thermally activated relaxation process, confirming localized charge carrier dynamics. These results highlight the dual role of cross-linking and nanoparticle addition in tuning the dielectric and thermal response of PVA-based composites. The materials developed here present promising features for scalable integration into future flexible, low-cost dielectric components, and embedded sensor technologies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145170190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A study on the enhancement of structural behavior and ionic conductivity of divalent-doped Li1.3Al0.3Ti1.7 (PO4)3 solid electrolytes for lithium-ion batteries","authors":"S. Selvakumar,&nbsp;S. C. Vella Durai,&nbsp;Indira Sundaram,&nbsp;S. Sudharthini","doi":"10.1007/s10854-025-15852-2","DOIUrl":"10.1007/s10854-025-15852-2","url":null,"abstract":"<div><p>Solid-state electrolytes (SSEs) represent a promising future power solution for electric vehicles (EVs) and electronic devices, owing to their improved safety characteristics, high energy density, and non-flammable properties. The NASICON-based Li_1.3Al_0.3Ti_1.7 (PO₄)₃—LATP structure is leading the way among oxide-based electrolytes, showcasing excellent Li-ion conductivity and stability in air. However, the development of high-performing oxide-based electrolytes poses challenges owing to their naturally rigid and fragile characteristics, which hinder the formation of an ideal interface between the cathode and anode. The M1–M2 voids situated between the TiO₆ octahedra and PO₄ tetrahedra in a LATP-based solid electrolyte serve as a primary pathway for lithium-ion transport, which can be enhanced for increased conductivity through doping. This study investigates the introduction of divalent ions into the Li_1.3Al_0.3Ti_1.7 (PO₄)₃-based electrolyte, widening the ion-conduction pathway thereby boosting ion conductivity. Creating doped Li_1.3Al_0.3Ti_1.7 (PO₄)₃ samples is performed via quenching method with melting before transforming into glass, followed by grinding, uniaxial compression molding, and sintering, after which they undergo analysis through scanning electron microscopy (SEM), X-ray diffraction (XRD), as well as impedance resistance measurements. The electrochemical evaluation indicated that the divalent incorporated LATP electrolytes displayed better structural behavior and consistent high ionic conductivity performance at low operating temperatures ranging 373–773 K when compared to LATP. This groundbreaking research underscores the potential of hybrid solid electrolytes that integrate Mg-doped LATP as a promising candidate for practical solid-state lithium batteries. The thermal treatment leads to the formation of LiTi₂(PO₄)₃, crystallizing to produce an electrolyte whose lattice parameter values are influenced by the type and amount of dopant ion, with each divalent ion inducing different distortions in the lattice and M1–M2 bottleneck structure. Notably, doping resulted in a structural change that boosted Li-ion conductivity to 3.41 × 10⁻³ S/cm at a 3 mol% magnesium ion concentration, with the threefold increase in conductivity compared to LATP (1.83 × 10⁻⁵ S/cm) attributable to the widening of the ion-conduction path. In summary, doping an LATP-based solid electrolyte with an appropriate divalent cation presents a promising method for enhancing performance, with numerous potential applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145170189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic properties of Bi-substituted M-type Barium hexaferrites in the region of single-phase state","authors":"A. V. Trukhanov,&nbsp;V. A. Turchenko,&nbsp;V. G. Kostishin,&nbsp;S. V. Trukhanov,&nbsp;I. A. Hrekau","doi":"10.1007/s10854-025-15825-5","DOIUrl":"10.1007/s10854-025-15825-5","url":null,"abstract":"<div><p>Main idea of the paper is to find confirmation of the mechanism of chemical substitution by isovalent ions with a large-ion radius (in this case Bi ions) in the structure of M-type hexagonal ferrite. There are two hypotheses on the distribution pattern of large-radius substituent ions in the hexaferrite structure. According to one hypothesis, the substitution should occur in B positions (by substituting Fe³⁺ ions) of AFe₁₂O₁₉. This is reasonable due to the isovalence of the Bi and Fe ions and is supported by the stoichiometry. According to the second hypothesis, the substitution should occur in A positions (Bi³⁺ can substitute for a commensurate Ba²⁺ ion). This is reasonable due to the ionic size of the Ba and Bi ions and the tolerance factor principle. BaFe_12-xBi_xO₁₉ (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions were produced by solid-state reactions. There are a lot of techniques used to investigate prepared samples. It was determined that the single-phase region is 0.1 ≤ x ≤ 0.5. It was shown that samples with 0.1 ≤ x ≤ 0.5 contain only one phase that can be described in the frame of P6₃/mmc. For the sample with x = 0.6, impurity phases were observed: BiFeO₃ (3.45 vol.%) and BiO₂ (1.44 vol.%). It was shown that the increase of the Bi concentration from 0.1 to 0.6 leads to a decrease in the main magnetic parameters: saturation magnetization from 53.48 to 51.45 emu/g; remnant magnetization from 27.91 to 23.71 emu/g; and coercivity from 2.6 to 1.3 kOe. Based on concentration dependences of the main magnetic parameters, we suggest that B-site substitution is realized in BaFe_12-xBi_xO₁₉ (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145170191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase tuning and optoelectronic properties of solution-processed Ba-doped Sb2S3 chalcogenide thin films","authors":"Ali AK. Bakly,&nbsp;Xiang Li Zhong,&nbsp;Salih Abbas Habeeb","doi":"10.1007/s10854-025-15849-x","DOIUrl":"10.1007/s10854-025-15849-x","url":null,"abstract":"<div><p>Antimony ethyl xanthate (<b>1</b>) and barium isopropyl xanthate (<b>2</b>) were synthesised and used as single-source precursors (SSPs) to prepare solution-processed Ba-doped Sb₂S₃ films. Ternary Sb_2-xBa_xS₃ films (0 ≤ x ≤ 100) mol% Ba and (BaS) film were synthesised by spin-coating the solution on glass substrates and annealing at 550 °C for 1.5 h, and (Sb₂S₃) films were annealed at 250 °C for 1 h. Compositional, structural, morphological, optical, and electrical properties were characterised by p-XRD, EDX, ICP, Raman spectroscopy, SEM, TEM, and resistivity measurements (ρ). (p-XRD) reveals that the (Sb₂S₃) film has an orthorhombic structure with a dominant (210) orientation. Ba incorporation induced a progressive phase transition; the (103) orientation was promoted at intermediate doping, and it was modified into a cubic (111) BaS phase at higher doping levels. SEM shows lamellar morphology at 50 mol% Ba. The existence of Sb, Ba, and S was verified using (EDX) and (ICP), confirming intact decomposition and phase purity, consistent with the X-ray diffraction (XRD) and Raman results. The optical bandgap (E_g), estimated from Tauc plots, ranged from 1.7 eV (Sb₂S₃) to 3.85 eV (BaS), indicating tunable optoelectronic properties. Resistivity increased with Ba content. (BaS) exhibited a raised resistivity (18.4 Ω cm), showing reduced conductivity compared to (Sb₂S₃).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}