Journal of Materials Science: Materials in Electronics最新文献

{"title":"Ozone-sensing study of sprayed Al-doped ZnS–ZnO thin films","authors":"T. Laribi,&nbsp;R. Souissi,&nbsp;S. Bernardini,&nbsp;M. Bendahan,&nbsp;N. Bouguila","doi":"10.1007/s10854-026-18649-z","DOIUrl":"10.1007/s10854-026-18649-z","url":null,"abstract":"<div><p>Undoped and aluminum-doped ZnS thin films were grown at 300 °C using the spray pyrolysis technique on Si/SiO₂ substrates with interdigitated platinum electrodes. The samples were analyzed using various characterization techniques. X-ray diffraction investigation showed that undoped ZnS layers present an amorphous phase while the Al-doped ZnS layers have hexagonal wurtzite structure. Therefore, aluminum doping improves the crystallinity and leads to the formation of a ZnS–ZnO composite material. Furthermore, the transmittance and the optical bandgap of the films were found to depend on the Al content. In addition, ozone detection was performed by DC electrical characterization for several concentrations in the range 30–120 ppb. The ozone-sensing response of the films was enhanced by Al-doping and the ZnS–ZnO(2at.%)Al sensor revealed the best performances. The response to 30 ppb ozone at 260 °C is found to be about 6.3 and the response time and recovery time are 47 and 83 s, respectively.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From single-layer optimization to tandem architectures: SILAR-grown PbS quantum dot thin films with enhanced conductivity","authors":"Riya Antony,&nbsp;P. Vijay Joy,&nbsp;K. Sudheer Sebastian,&nbsp;Maya Mathew","doi":"10.1007/s10854-026-18632-8","DOIUrl":"10.1007/s10854-026-18632-8","url":null,"abstract":"<div><p>Lead sulfide (PbS) quantum dot thin films with an average crystallite size of 1.2 nm were synthesized and systematically optimized for use as sensitizers in quantum dot-sensitized solar cells (QDSSCs), with an objective of achieving high film conductivity. The number of SILAR (Successive Ionic Layer Adsorption and Reaction) cycles was optimized at 10, while the complexing agent concentration in the cationic precursor was fixed at 2 drops per 60 ml, as higher concentrations were found to degrade conductivity. Incorporation of polyethylene glycol (PEG) as a conductive surfactant in this optimized single-layer film yielded a resistance of the order of 10⁻² Ω. To further enhance conductivity, tandem bilayer and trilayer PbS QD architectures were designed by combining layers of varying molar concentrations and SILAR cycles. The bilayer structure (centimolar bottom layer, millimolar upper layer) achieved a lower resistance of 10⁻³ Ω, a value that remained stable upon varying bottom-layer thickness. The trilayer structure (decimolar, centimolar, and millimolar layers) exhibited a resistance of 10⁻² Ω, irrespective of PEG incorporation. Overall, the optimized single-layer film requires 10 SILAR cycles, 2 drops of triethanolamine, and PEG surfactant, whereas optimized tandem structures (bilayer or trilayer) achieve superior conductivity without PEG, establishing viable, high-conductivity PbS QD architectures for QDSSC sensitizer applications. Further, the PbS quantum dot-sensitized solar cell device was optimized using SCAPS-1D simulation software, achieving a power conversion efficiency of 8.17%, which is in good agreement with reported literature values, thereby validating the experimentally optimized architectures for practical QDSSC applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructural refinement and mechanical strengthening of SAC305 lead-free solder through cerium microalloying","authors":"Nasir Akbar,&nbsp;Muhammad Sadiq Khattak,&nbsp;Hamaad Jamal,&nbsp;Mohammad Younas,&nbsp;Syed Abu Huraira,&nbsp;Muhammad Owais khan","doi":"10.1007/s10854-026-18635-5","DOIUrl":"10.1007/s10854-026-18635-5","url":null,"abstract":"<div><p>The effect of cerium (Ce) microalloying on the microstructural evolution, thermal behavior, and mechanical properties of SAC305 lead-free solder was investigated to establish quantitative correlations between microstructure and mechanical performance. SAC305 alloys containing 0.2, 0.3, and 0.5 wt.% Ce were systematically investigated. The addition of 0.2 wt.% Ce produced the greatest microstructural refinement, reducing the β-Sn volume fraction from 35 ± 3% to 26 ± 2% and the average β-Sn grain size from 20 ± 2 μm to 10 ± 2 μm. This refinement resulted in the highest tensile strength (51.5 MPa), toughness (12.9 MJ m⁻³), and hardness (18.5 HV), corresponding to improvements of 22.6%, 30.3%, and 34%, respectively, compared with the base SAC305 alloy. Higher Ce additions diminished the refinement effect, leading to coarser β-Sn regions and reduced mechanical performance. DSC analysis revealed negligible changes in melting behavior, with peak melting temperatures remaining between 222.07 and 223.40 °C, indicating compatibility with conventional reflow soldering. Overall, 0.2 wt.% Ce provides the optimum balance of microstructural refinement, mechanical strengthening, and thermal stability in SAC305 solder under the present experimental conditions. The improved strength and toughness, together with the limited changes in melting characteristics, suggest that Ce-microalloyed SAC305 may be of interest for high-reliability electronic packaging applications, including automotive electronics, power modules, and advanced microelectronic interconnects, subject to further application-specific reliability validation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Mg substitution on the structural, morphological, and dielectric properties of SrZn2W-type hexaferrites with a spinel secondary phase for microwave antenna substrates","authors":"Dipti D. Parmar,&nbsp;Charmi D. Patel,&nbsp;Priti D. Chaudhari,&nbsp;Charanjeet Singh,&nbsp;Arpan Desai,&nbsp;Abhisek A. Gor,&nbsp;Rajshree B. Jotania","doi":"10.1007/s10854-026-18555-4","DOIUrl":"10.1007/s10854-026-18555-4","url":null,"abstract":"<div><p>This study investigates structural, surface morphology, and dielectric properties of Mg-substituted <span>({SrZn}_{2}{Mg}_{x}{Fe}_{16-x}{O}_{27} (0.0le xle 1.0)</span>) ferrites synthesized using the citrate–gel method in order to evaluate their potential as microwave antenna susbstrates applications. Structural, surface morphology, and dielectric measurements were carried out using X-ray diffraction, SEM with EDAX, an LCR meter, and a vector network analyzer (VNA) over the low frequency of 20 Hz–2 MHz and high frequency of 0.2–20 GHz, respectively. XRD analysis revealed formation of mixed phases of W and spinel. Surface morphology has been changed with Mg substitution. Mg substitution significantly modifies the dielectric response, with the <i>x</i> = 0.2 composition exhibiting the lowest dielectric constant, while the undoped composition shows the highest value. Among the investigated compositions, the <i>x</i> = 0.2 sample exhibited the most stable dielectric response, with an almost frequency-independent dielectric constant and a low loss tangent of 0.0046 over the 10–20 GHz range. Owing to these favorable dielectric characteristics, the <i>x</i> = 0.2 composition was selected for antenna design. An aperture-coupled patch antenna was designed and simulated using Ansys HFSS by integrating the Mg-substituted ferrite substrate (<i>ε</i>_r = 8.112, tan <i>δ</i> = 0.0046) with a Rogers 4003C substrate (<i>ε</i>_r = 3.38, tan <i>δ</i> = 0.0027). The designed antenna exhibits a resonance frequency of 10 GHz, a minimum <i>S</i>₁₁ of − 31 dB, and a gain of 1.8 dBi, indicating good impedance matching and promising performance for compact microwave communication applications. The results show that moderate Mg substitution, particularly at <i>x</i> = 0.2, provides a useful balance between dielectric constant and microwave loss, making the material suitable for low-loss substrate for compact high-frequency antenna applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and electromagnetic wave absorption performance of cauliflower-shaped Fe3O4@PANI composite materials","authors":"Meihua Li,&nbsp;Zijian Jing,&nbsp;Yuanfa Li,&nbsp;Yang Chen","doi":"10.1007/s10854-026-18621-x","DOIUrl":"10.1007/s10854-026-18621-x","url":null,"abstract":"<div><p>With the widespread use of modern electronic devices, the problem of electromagnetic pollution has become increasingly serious. Developing efficient electromagnetic wave absorbing materials has become an important topic in materials science. In this study, a cauliflower-shaped Fe₃O₄@PANI composite material was prepared by the hydrothermal method and in situ polymerization. The effects of hydrochloric acid concentration and the final sample loading on the performance of the composite material were discussed. The results showed that when the hydrochloric acid concentration was 1.5 mol/L, the Fe₃O₄ addition amount was 0.1 g, the loading was 30 wt%, and the performance of the Fe₃O₄@PANI composite material was the best. The minimum reflection loss reached − 41.7 dB, the maximum effective absorption bandwidth was 5.31 GHz, and the matching thickness was only 2.0 mm. The Fe₃O₄@PANI composite material exhibits excellent electromagnetic wave absorption potential because it simultaneously has magnetic loss and dielectric loss characteristics. The PANI coating enhances the interface polarization and conductive network of the material, and the synergistic effect of impedance matching and attenuation constant improves the absorption efficiency of electromagnetic waves.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural inheritance and transport response in MOCVD/PA-MBE regrowth of AlGaN/GaN heterostructures on GaN/sapphire and thin-buffer SiC/Si templates","authors":"P. V. Seredin,&nbsp;N. S. Buylov,&nbsp;D. L. Goloshchapov,&nbsp;A. M. Mizerov,&nbsp;Y. A. Peshkov,&nbsp;Sh. Sh. Sharofidinov,&nbsp;E. V. Nikitina,&nbsp;S. N. Timoshnev","doi":"10.1007/s10854-026-18616-8","DOIUrl":"10.1007/s10854-026-18616-8","url":null,"abstract":"<div><p>In this study, the process of forming a nanometer-scale active region via plasma-assisted molecular beam epitaxy (PA-MBE) with nitrogen plasma activation was applied to two distinctly different nitride template architectures. These templates were initially fabricated by the metal–organic chemical vapor deposition (MOCVD) method and served as controlled materials science probes to investigate the inheritance of the structural state of the original buffer during the subsequent regrowth of AlGaN/GaN heterostructures. A conventional GaN/c–Al₂O₃ template with an MOCVD-GaN buffer approximately 1.5 μm thick was compared to a significantly thinner Al_0.1Ga_0.9N/AlN/SiC/Si(111) template. On both templates, a nominally identical active sequence—AlN/GaN/AlN/AlGaN/GaN—was formed. The structures were characterized using Hall measurements, scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray diffraction/reciprocal space mapping (XRD/RSM), X-ray reflectivity (XRR), Raman spectroscopy, and photoluminescence. The results demonstrate a pronounced inheritance of the initial architecture. The reference GaN/sapphire template exhibited a more uniform morphology, narrower diffraction distributions, a higher XRD-estimated lateral coherence length (~ 130 versus ~ 41 nm), and a lower volume-averaged biaxial stress (~ 0.55 versus ~ 3–4 GPa). Cross-sectional TEM of the SiC/Si template directly revealed contrast from extended defects traced from the MOCVD-AlGaN layer through the MOCVD/PA-MBE interface into the PA-MBE-GaN layer, whereas the structure on GaN/sapphire showed a more uniform microstructure in the active region. Raman spectroscopy further indicated a structurally inhomogeneous conversion SiC interlayer with contributions characteristic of several SiC polytypes. At room temperature, Hall measurements showed effective sheet electron concentrations of approximately 3–4 × 10¹³ cm⁻² for both structures, with effective mobilities of about 510 and 690 cm²/(V·s) for the SiC/Si and GaN/sapphire templates, respectively. Since Hall data alone cannot exclude parallel conduction in GaN or at the regrowth interface, the measured sheet concentration is not interpreted as the definitive concentration of a single two-dimensional electron gas (2DEG) channel. Meanwhile, the thin-buffer SiC/Si template retains about 74% of the effective Hall mobility of the thick-buffer GaN/sapphire reference. Overall, the data indicate that the inherited inhomogeneity of the initial SiC/Si architecture significantly contributes to the observed structural limitations and suggests specific directions for further optimization.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-target DC magnetron sputtering and optimized sulfurization: achieving high crystallinity in Cu3SnS4 thin films for photovoltaics","authors":"Leikai Wei,&nbsp;Tao Shen,&nbsp;Shujie Yang,&nbsp;De-Quan Yang,&nbsp;Yan Zhu","doi":"10.1007/s10854-026-18637-3","DOIUrl":"10.1007/s10854-026-18637-3","url":null,"abstract":"<div><p>The fabrication of Cu₃SnS₄ thin films through DC magnetron sputtering presents significant challenges due to the material’s limited electrical conductivity, which can lead to charge accumulation and arcing during deposition. This study introduces a novel conductive-backed composite target design, integrating a copper backing plate with a ceramic Cu₃SnS₄ target, to address these issues effectively. Systematic optimization of the sputtering parameters, including substrate temperature and post-deposition sulfurization conditions, resulted in the successful formation of predominantly single-phase kuramite-type Cu₃SnS₄ films indexed on the tetragonal cell (JCPDS 33–0501) with substantial crystallinity and improved surface morphology. Key findings include a significant crystalline transition observed between temperatures of 160 °C and 240 °C, achieving a maximal as-deposited crystallite size of 17.1 nm at 320 °C. Subsequent sulfurization at 550 °C was identified as the optimal condition, yielding predominantly single-phase material, enhanced film quality, and improved electronic properties, with crystallite size further increasing to ~20 nm. X-ray photoelectron spectroscopy shows that sulfurization produces a marked chemical homogenization of the Cu environment rather than a resolved change of formal copper valence: the Cu 2p_3/2 line narrows from 4.1 ± 0.2 to 1.4 ± 0.1 eV and the sulfate fraction of the S 2p signal falls from 55 ± 6 to 9 ± 5%, with Cu 2p_3/2 centred at 931.8 eV, characteristic of Cu(I) in a sulfide environment. Finally, the optimized films exhibited remarkable optoelectronic characteristics, including a bandgap of 1.50 eV (with values ranging from 1.06 to 1.50 eV across the temperature series; the lowest values coincide with secondary-phase formation and morphological degradation and do not represent a usable tuning range), a carrier concentration of ~4.7 × 10¹⁷ cm⁻³, a ~13-fold enhancement in mobility (to 10.7 cm²·V⁻¹ s⁻¹), and a 138-fold reduction in resistivity, that is, more than two orders of magnitude (to 1.25 Ω cm). This composite target approach simplifies the sputtering process, enhances deposition efficiency, and offers a promising pathway for scalable production potentially suitable as an absorber layer for next-generation photovoltaic technologies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"S-scheme CdS/Ag/V2O5 heterostructure for efficient visible-light-driven hydrogen production","authors":"Guangling Zuo,&nbsp;Xianzhou Cao,&nbsp;Hongyong Ye,&nbsp;Jia Du,&nbsp;Xin Ding","doi":"10.1007/s10854-026-18658-y","DOIUrl":"10.1007/s10854-026-18658-y","url":null,"abstract":"<div><p>To address the limited activity and stability of V₂O₅ (VO) in photocatalytic H₂ evolution, an S-scheme heterojunction photocatalyst, denoted as CS/Ag/VO, was developed by loading CdS (CS) onto Ag-decorated VO (Ag/VO) through a two-step hydrothermal–solvothermal route. The structural and optical properties of the as-prepared catalysts were systematically characterized, and their photocatalytic H₂ evolution performance was evaluated using TEOA as a sacrificial electron donor and in situ-generated Pt⁰ as a cocatalyst. The results show that Ag is present as highly dispersed nanoparticles and that CS is uniformly immobilized on the Ag/VO surface, which establishes intimate interfacial contact among the three components. Remarkably, the optimal CS/Ag/VO composite delivered a superior H₂ yield of 9634 μmol·g⁻¹ under visible light—5.29, 3.82, and 1.82 times greater than that of individual VO, CS, and Ag/VO, respectively—while maintaining 86.3% of its initial activity over six cycles, exhibiting robust stability. X-ray photoelectron spectroscopy (XPS), Mott-Schottky (M-S), and electron spin resonance (ESR) analyses reveal that a built-in electric field (IEF) directed from CS to VO is formed at their interface. This IEF, along with band bending, facilitates the S-scheme charge migration pathway. In this mechanism, low-activity photogenerated electron–hole pairs (PEHP) recombine in the interfacial region, while the strongly reducing electrons (enriched in the conduction band (CB) of CS) and the strongly oxidizing holes (enriched in the valence band (VB) of VO) are preserved. These retained charges effectively drive proton reduction and sacrificial-agent oxidation, respectively, synergistically enhancing the photocatalytic H₂ evolution performance. Furthermore, the material maintained high H₂ evolution activity even in common water bodies such as tap water and river water under TEOA-assisted and Pt-cocatalyzed conditions, demonstrating its tolerance to real-water matrices and its potential for practical application in a sacrificial-agent-assisted system. This study provides a solid experimental basis and a valuable theoretical reference for designing high-efficiency, stable S-scheme heterojunction photocatalysts.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Large-scale tunable few- and multilayer WS2-based vertically asymmetric high-performance Schottky photodetectors fabricated via sulfurization of reactively sputtered WO3-x","authors":"Mücahit Yılmaz,&nbsp;Zeynep Mavili,&nbsp;Deniz Cihan Gündüz","doi":"10.1007/s10854-026-18592-z","DOIUrl":"10.1007/s10854-026-18592-z","url":null,"abstract":"<div><p>Semiconducting transition-metal dichalcogenides (STMDCs) are promising candidates for next-generation photodetector applications thanks to their excellent charge carrier mobility. Physics-informed development of STMDCs-based photodetectors while maintaining compatibility with mass production and preserving photodetector performance is still a challenge. Here, we report on the fabrication and optimization of large-scale, few- and multilayer WS₂-based vertically asymmetric Schottky photodetectors with high performance and tunability. A holistic approach was adopted to optimize the Schottky photodetectors through two main strategies. The first is the careful selection of fabrication processes and chemicals guided by sulfurization chemistry. The second is the design of Schottky photodetectors guided by the thermionic emission model. This includes Schottky barrier height engineering, asymmetric contact design, and surface morphology tuning by controlling WS₂ nanocrystallite formation. WS₂ thin films with controlled thicknesses were synthesized via chemical vapor deposition sulfurization of WO_3-<i>x</i> layers. These layers were prepared by reactive magnetron sputtering of tungsten, where deposition duration governs both film thickness and surface morphology evolution, including nanocrystallite formation. Comprehensive structural and optical characterization demonstrated the synthesis of high-quality WS₂ and confirmed few-layer formation for the sample deposited for 60 s. A correlation between the structural and optical properties and device performance was established.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailored morphologies: enhancing cobalt oxide thin films for superior supercapacitor performance","authors":"K. Dinesh,&nbsp;A. Suganya","doi":"10.1007/s10854-026-18612-y","DOIUrl":"10.1007/s10854-026-18612-y","url":null,"abstract":"<div><p>Whilst many electrode materials struggle to achieve high electrochemical performance and excellent stability, Co-MOF-derived Co₃O₄ thin films have been considered as a potential candidate for energy storage applications, owing to their excellent electrochemical properties. The main objective of this study was to investigate the role of polyvinylpyrrolidone (PVP), triethylamine (TEA), and hexamine (HTMA) surfactants in modulating the electrochemical behaviour of Co-MOF-derived Co₃O₄ thin films synthesised by chemical bath deposition followed by calcination at 400 °C in an Ar atmosphere. The electrochemical analysis showed that the PVP-modified thin film exhibited the highest specific capacitance (488.2 C/g at 1 A/g) and retained 91.4% of its initial value after 5000 cycles at 20 A/g. Asymmetric supercapacitors (ASC) that were constructed using reduced graphene oxide (rGO) as the cathode and MCo-PVP as the anode demonstrated exceptional performance of 73.7 C/g at 2 A/g, with a maximum energy density of 15.3 W h/kg and a power density of 681.8 W/kg whilst maintaining a capacity retention of 82%. These findings show the potential of Co₃O₄ thin films for high-performance supercapacitor applications and emphasise the significance of surfactant selection in enhancing the electrochemical characteristics of Co₃O₄ electrodes.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2,"publicationDate":"2026-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}