Journal of Materials Science: Materials in Electronics最新文献

{"title":"Effect of the ZnO addition on the sinterability and microwave dielectric properties of BPO4","authors":"H. J. Wang,&nbsp;J. M. Wang,&nbsp;J. J. Bian","doi":"10.1007/s10854-025-14925-6","DOIUrl":"10.1007/s10854-025-14925-6","url":null,"abstract":"<div><p>BPO₄ has low <i>ε</i>_<i>r</i> (&lt; 5) and an acceptable high <i>Q</i> × <i>f</i> value, while extremely poor sinterability. It showed that, in the present work, an appropriate addition of ZnO could simultaneously enhance the sinterability and microwave dielectric properties of BPO₄ ceramic. The addition of ZnO led to the formation of zinc-phosphates, a small amount of zinc borate, and B₂O₃ secondary phases, which increased with increasing the ZnO addition. A small amount of ZnO addition increased the dielectric permittivity, <i>Q</i> × <i>f</i> value, and more negative <i>τ</i>_<i>f</i> value. The 0.97BPO₄-0.07ZnOceramic exhibit good combined microwave dielectric properties with <i>ε</i>_<i>r</i> ~ 4.75, <i>Q</i> × <i>f</i> ~ 55,000 GHz, and <i>τ</i>_<i>f</i> ~ -42 ppm/^℃after sintering at 1150 °C/2 h.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The influence of Ni impurities on the structural phase of BiVO4 for enhanced binder-free voltammetric vanillin sensing, photocatalysis, and latent fingerprint studies","authors":"T. L. Soundarya,&nbsp;B. T. Jyothi Prasad,&nbsp;J. Sanjay,&nbsp;B. Nirmala,&nbsp;Mohd Shkir,&nbsp;G. Nagaraju,&nbsp;R. Harini","doi":"10.1007/s10854-025-14876-y","DOIUrl":"10.1007/s10854-025-14876-y","url":null,"abstract":"<div><p>The creation of advanced materials for addressing contemporary challenges in environmental monitoring and forensic investigations, as well as in food quality assessment, is very important in the modern technology research field. Hence, there is a high demand for multifunctional materials with innovative designs. In this study, a facile technique is used to synthesize Ni-doped BiVO₄ (NBV) nanoparticles (NPs) using glucose as a reducing agent. The effect of doping and the structural transformation was studied by introducing different dopant percentages, such as 2%, 4%, 8%, and 10% Ni, into BiVO₄ (BV) and comparing the characteristic properties of BV using characterization techniques such as XRD, UV–vis, FT-IR, SEM, PEIS, and PL. With the addition of dopant Ni, a phase transformation of BiVO₄ occurs, retaining its original monoclinic phase while introducing another phase, such as tetragonal. This leads to the stabilization of a dual-phase system that alters the electrochemical and optical properties. The band gaps of the synthesized NPs are found to be in the range of 1.50–4.0 eV, with 4% Ni-doped BiVO₄ (4 NBV) showing a very low band gap of 1.57 eV. 4 NBV modified GCE shows a highly sensitive response for the detection of vanillin, with a detection limit of 99 nM and a sensitivity of 81.21 A/M, highlighting its versatility in analytical applications. The photoluminescence property of NPs at 488 nm highlights their optical properties with greenish-blue emission for optoelectronic devices as well as advanced forensic studies through the development of visible, well-defined latent fingerprints. 4 NBV exhibits excellent photocatalytic properties, demonstrating 100% efficiency in degrading organic contaminants such as methylene blue.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14876-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of mechanochemical milling on the properties of Ag₂O self-reducing pastes for conductive layers in flexible electronics","authors":"Alena Pietrikova,&nbsp;Peter Provazek,&nbsp;Peter Lukacs,&nbsp;Daniel Dzivy,&nbsp;Karel Saksl,&nbsp;Beata Ballokova,&nbsp;Robert Dzunda,&nbsp;Peter Nemergut","doi":"10.1007/s10854-025-14893-x","DOIUrl":"10.1007/s10854-025-14893-x","url":null,"abstract":"<div><p>This work investigates the production of conductive silver layers at low temperatures by the mechanochemical processing of silver oxide (Ag₂O) particles. Using modified Ag₂O particles in a planetary ball mill, a cost-effective method for producing a self-reducing polymer paste is developed. Milling for 5, 10, or 15 h results in smaller particles and increased surface activity, which enables effective Ag₂O reduction at low temperatures. A paste containing 70% AgO particles milled for 5 h exhibits long-term stability and forms conductive silver layers in 25 min at 130 °C. Heat and reducing agents reduce Ag₂O to Ag, achieving a sheet resistance of 21.794 mΩ/□ with 2 printed layers. After two months, stability tests validate the paste’s rheological stability. These results demonstrate the possibility of creating flexible silver layers using a low-cost Ag₂O-based paste, offering a sustainable and efficient approach for low-cost electronics. The most appropriate milling time is 5 h, producing particles suitable for printing (0.252–6.325 <i>µ</i>m).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14893-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploration of manganese on structural, morphological and optical properties of MnxIn2S3+x (0 ≤ x ≤ 1.0) nanoparticles","authors":"C. Neela Mohan,&nbsp;T. Kasilingam,&nbsp;A. Dinesh,&nbsp; E.Priyadharshini,&nbsp;Manikandan Ayyar,&nbsp;Lalitha Gnanasekaran,&nbsp;M. Santhamoorthy,&nbsp;Rajendra P. Patil,&nbsp;Munawar Iqbal","doi":"10.1007/s10854-025-14944-3","DOIUrl":"10.1007/s10854-025-14944-3","url":null,"abstract":"<div><p>Controlling the morphology and optical properties of nanoparticles is crucial for advancing the development of various nanomaterials based functional devices, such as optoelectronic, biomedical and energy storage devices. The current work investigates structural, morphological and optical properties of Mn_xIn₂S_3+x (0 ≤ <i>x</i> ≤ 1.0) nanoparticles (NPs) synthesized by hot-injection method. Oleic acid and octadecene served as capping agents and non-coordinating solvents. The incorporation of Mn²⁺ ions was evident from the color change from yellow (In₂S₃) to dark brown (MnIn₂S₄). The structural, morphological and optical properties of nanomaterials were characterized using various spectroscopic techniques, like XRD, HR-TEM, XPS, UV-DRS and PL analysis. XRD analysis confirms the formation of cubic In₂S₃ and MnIn₂S₄ crystal structures. XPS analysis verified the electronic oxidation states of elements, which are present in MnIn₂S₄ NPs. In₂S₃ (<i>x</i> = 0), and MnIn₂S₄ (<i>x</i> = 1.0) nanoparticles exhibits spherical, and flake-like morphologies, which are confirmed by HR-TEM images. UV–vis DRS revealed a blue-shifts with increasing ‘<i>x</i>’ concentration from 0 to 1.0. The optical band gap (E_g) range of Mn_xIn₂S_3+x (0 ≤ <i>x</i> ≤ 1.0) was found in the range 2.18 and 2.82 eV by Kubelka- Munk plot. In addition, PL emissions shows concentration-dependent emissions with strong broad PL bands centered at 575, 490, and 475 nm. Finally, the luminescent properties of synthesized MnIn₂S₄ nanomaterial holds significant importance for investigating the potential applications for optoelectronic, bioimaging and energy storage devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144108626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the wettability, intermetallic compound growth, voids formation and mechanical properties of Cu/Sn joints with changes in substrate roughness for electronic packaging","authors":"Yibo Hu,&nbsp;Jieshi Chen,&nbsp;Yi Zhen,&nbsp;YuZhu Han,&nbsp;Chun Yu,&nbsp;Kai Xiong,&nbsp;Shuye Zhang","doi":"10.1007/s10854-025-14931-8","DOIUrl":"10.1007/s10854-025-14931-8","url":null,"abstract":"<div><p>The study investigates the effects of roughness changes on the wettability, intermetallic compound growth, voids formation, and shear mechanics of Cu/Sn joints by preparing microtextures with different intervals on the Cu surface using femtosecond laser. The study found that the roughness of the substrate increased from 0.03 μm to 0.09 μm ~ 0.16 μm after laser treatment, and the corresponding wetting angle decreased from 49.75° to 30° ~ 40° due to the formation of periodic grooves after ultrafast laser processing, which created energy barriers that reduced the spreading ability and wettability of liquid metal. During the variation of surface roughness, the thickness of the intermetallic compounds (IMCs) is the greatest at the maximum roughness level both before and after thermal ageing. After 168 h of thermal treatment, a significant number of voids are generated at the joint with the maximum roughness. The joint with a roughness of 0.16 μm exhibits the fastest growth rate of IMCs thickness, while the joint with the maximum roughness shows the lowest shear strength. Additionally, as the roughness decreases, the fracture mode transitions from ductile fracture to brittle fracture. The reasons for the aforementioned phenomena are that the changes in roughness lead to variations in nucleation at the interface during the liquid-state process, which in turn affect the diffusion channels at the interface and ultimately cause unbalanced diffusion of copper and tin.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A detailed analysis of electrical parameters and energy dependence of interface Traps in Au-(Co:PVA)-nSi-Al structure via impedance measurements","authors":"Ç. Ş. Güçlü,&nbsp;S. A. Hameed,&nbsp;A. Khalkhali,&nbsp;İ. Taşçıoğlu,&nbsp;Ş. Altındal","doi":"10.1007/s10854-025-14895-9","DOIUrl":"10.1007/s10854-025-14895-9","url":null,"abstract":"<div><p>In this study, impedance measurements of the Au-(Co:PVA)-nSi-Al structure were conducted across a frequency range of 1–1000 kHz and a voltage range of − 3.5 V to + 2 V. Following this, the voltage and frequency dependence of key electrical parameters including the density of donor atoms (<i>N</i>_D), built-in voltage (<i>qV</i>_bi), barrier height (<i>Φ</i>_B), depletion layer width (<i>W</i>_D), and maximum electric field (<i>E</i>_m) were derived from the linear region of the 1/<i>C</i>² versus <i>V</i> plots. The voltage-dependent density of interface traps (<i>N</i>_it) was determined using three distinct methods: high-low frequency capacitance, the Hill-Coleman, and parallel conductance methods. Additionally, the voltage-dependent series resistance (<i>R</i>_s) was extracted from the Nicollian-Brews model for each frequency. The experimental results revealed that nearly all fundamental electronic parameters exhibit significant variations with both frequency and voltage, particularly at low and intermediate frequencies. These variations are attributed to the specific distribution of <i>N</i>_it at the interlayer-semiconductor interface, their relaxation times (<i>τ</i>), the (Co:PVA) interlayer, and the <i>R</i>_s. To mitigate the influence of <i>R</i>_s on the high-frequency <i>C</i>/<i>V</i> and <i>G</i>/<i>ω</i>-<i>V</i> curves, corrections were applied at 1 MHz. It was observed that while <i>N</i>_it predominantly influences the inversion and depletion regimes at lower frequencies, the <i>R</i>_s becomes the dominant factor in the accumulation regime at higher frequencies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14895-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile fabrication of carbon quantum dot-based CdS and Co-doped CdS nanocomposites as effective sensitizers for solar cell applications: a hydrothermal synthesis approach","authors":"Orhan Baytar,&nbsp;Sabit Horoz,&nbsp;Ömer Şahin,&nbsp;Sinan Kutluay","doi":"10.1007/s10854-025-14914-9","DOIUrl":"10.1007/s10854-025-14914-9","url":null,"abstract":"<div><p>The development of efficient and sustainable materials for solar energy conversion remains a key challenge in renewable energy research. Cadmium sulfide (CdS) nanoparticles are widely used as sensitizers in solar cells due to their favourable optoelectronic properties. However, their efficiency is often limited by charge recombination and poor electron transport. To overcome these limitations, this study explores the incorporation of carbon quantum dots (CQDs) and cobalt (Co) doping into CdS nanocomposites (NCs) to enhance their photovoltaic performance. CQDs, synthesized from mulberry molasses via a hydrothermal method, were incorporated into CdS to improve charge separation, while Co doping was employed to reduce recombination losses. The structural and electronic properties of the synthesized CdS/CQD and Co-doped CdS/CQD NCs were thoroughly characterized using Fourier transform infrared spectroscopy (FT–IR), Brunauer–Emmett–Teller (BET), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), transmission electron microscopy (TEM) and ultraviolet–visible (UV–Vis) spectroscopy. The photovoltaic performance was evaluated by current–density-voltage (J–V) measurements, revealing that the Co-doped CdS/CQD NCs exhibited superior efficiency (2.21%) compared to CdS/CQD (2.17%). The observed improvement is attributed to enhanced electron injection and reduced recombination due to Co doping. These results highlight the potential of Co-doped CdS/CQD NCs as effective sensitizers in solar cells, offering a promising strategy for the advancement of sustainable photovoltaic technologies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14914-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface and dielectric properties of Al/p-Si diode by organic composite interlayer for MOS","authors":"S. Demirezen,&nbsp;A. Dere,&nbsp;H. G. Çetinkaya,&nbsp;Shehab A. Mansour,&nbsp;F. Yakuphanoglu","doi":"10.1007/s10854-025-14910-z","DOIUrl":"10.1007/s10854-025-14910-z","url":null,"abstract":"<div><p>Thin films with different ratios (0, 0.5, and 2 wt%) of GO-doped P3HT:PCBM were synthesized on p-Si wafers using the spin coating technique to create Al/GO:P3HT:PCBM/p-Si structures. In order to comprehensively investigate the effect of GO doping on P3HT:PCBM in terms of AC electrical conductivity (<i>σ</i>_ac), complex permittivity (<i>ε</i>*), complex electric modulus (M*), and complex impedance (Z*), we have performed capacitance/conductance-voltage (C/G-V) measurements on Al/GO:P3HT:PCBM/p-Si structures over a wide range of frequencies and voltages. Different ratios (0, 0.5, and 2 wt%) of GO in P3HT:PCBM layers were deposited on a p-type Si wafer as an interlayer. The values of the complex dielectric constant/loss (<i>ε</i>ʹ/<i>ε</i>″), the loss tangent (tan<i>δ</i>), the AC electrical conductivity (<i>σ</i>_ac), and the real/imaginary components of the complex electric modulus (Mʹ, M″) were determined from the C/G-V measurements as a function of frequency, ranging from 0.5 to 2.5 V with 100 mV steps. All parameters showed distinct frequency/voltage dependencies, surface/dipole polarizations, and interlayer effects, especially at low and intermediate frequencies. In particular, the elevated dielectric constants measured (approximately 52 for 0.5% GO concentration and 60 for 2% GO concentration) at frequencies as high as 10 kHz indicate that GO:P3HT thin films are a viable alternative to conventional SiO₂ dielectrics. The real component of the dielectric permittivity maintained at 10 kHz exceeds that of conventional SiO₂ insulators (3.8) by a factor of 16, demonstrating the superior charge storage capacity of these composite films and their potential to replace standard insulators in energy storage applications. Furthermore, the value of <i>σ</i>_ac increased with increasing doping rate of GO, indicating potential advantages of using high-dielectric organic thin films between metal and semiconductor instead of conventional metal/oxide/semiconductor (MOS) structures. The plot of ln(<i>σ</i>ₐₐ) as a function of ln(<i>f</i>) for the synthesized structures reveals two distinct linear regions, each characterized by varying slopes. This finding indicates the presence of two independent conduction mechanisms operating within the structures at ambient temperature. Moreover, the M″ exhibits a significant peak, the location of which advances toward higher frequencies as the applied voltage increases. This peak phenomenon can be ascribed to a diminution in polarization effects alongside contributions arising from interfacial or surface states.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14910-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosted redox reaction of polysulfides by nitrogen-doped carbon-encapsulated NiFe alloy nanoparticle-modified carbon nanotubes composite as multifunctional separators in Li–S batteries","authors":"Fenghua Wang,&nbsp;Zhibao Li,&nbsp;Junpeng Shang,&nbsp;Chao Ma,&nbsp;Zeyu Sun,&nbsp;Baoguo Shen,&nbsp;Yingying Zheng,&nbsp;Shuai Zhang,&nbsp;Shanshan Yao","doi":"10.1007/s10854-025-14929-2","DOIUrl":"10.1007/s10854-025-14929-2","url":null,"abstract":"<div><p>Lithium–sulfur (Li–S) batteries offer high specific energy at low cost but are hindered by the shuttle effect, which reduces capacity and cycled life due to sluggish sulfur redox kinetics. The efficient limitation of the shuttle effect of polysulfides from rational construction of electrocatalysts to accelerate the redox kinetics of polysulfides is extremely important. In this study, nitrogen doped carbon encapsulated NiFe alloy nanoparticles (NC@NiFe) modified carbon nanotubes hybrid materials (NC@NiFe/CNTs) are coated on a pristine polypropylene separator for capturing and boosting the conversion of polysulfides in lithium–sulfur batteries. The one-dimensional CNTs promote the lithium ions and electron pathways in redox kinetics, while the NC@NiFe nanoparticles ensure the full exposure of active sites and accelerate polysulfides redox kinetics through chemisorption and catalytic conversion. Considering of these advantages mentioned above, when applied as the lithium–sulfur batteries separator modifier, the cell assembled from the NC@NiFe/CNTs modified separator with 3.8 mg cm⁻² sulfur loading demonstrate high specific capacity (844.1 mAh g⁻¹ at 0.3 C), and excellent cycling performance, which can maintain the capacity of 653.7 mAh g⁻¹ after 200 cycles with low-capacity decay rate of 0.11% per cycle. Even under a high sulfur loading of 8.9 mg cm⁻², the cell can still present excellent cycling stability. This study paves the design alloy nanoparticles modified carbonaceous materials hybrid for the construction outstanding functional separator layer and feasible synergistic approach for the inhibition of shuttle effect in lithium–sulfur batteries.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Identification of defects and impurities in hydrothermally grown ZnO single crystals by ESR","authors":"T. Abe,&nbsp;H. Osada","doi":"10.1007/s10854-025-14951-4","DOIUrl":"10.1007/s10854-025-14951-4","url":null,"abstract":"<div><p>For the use of hydrothermally grown crystals in optoelectronic device applications, improved crystallinity and better control of resistivity are required. Resistivity depends on structural defects and impurities. Hydrothermal synthesis allows the mass production of ZnO single crystals at low cost. However, ZnO single crystals grown by this method still have impurities and defects. The green-yellow spectral emission observed in ZnO at room temperature is believed to be caused by defects and is attributed to the presence of oxygen vacancies or zinc interstitial atoms, but the cause is still unknown. We have cut a-plane, m-plane, and c-plane substrates from hydrothermally grown ZnO bulk single crystals and identified and studied the defects and impurities by electron spin resonance (ESR), luminescence lifetime, photoluminescence (PL), X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDS).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14951-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}