Journal of Materials Science: Materials in Electronics最新文献_第5页

Harnessing single phase Cu2ZnSnS4 nanomaterial for photocatalytic degradation of malachite green dye

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-23 DOI: 10.1007/s10854-025-14649-7

Roomul Mushtaq, Shahbaz Ahmad, Towseef Ahmad, Mohd Zubair Ansari

{"title":"Harnessing single phase Cu2ZnSnS4 nanomaterial for photocatalytic degradation of malachite green dye","authors":"Roomul Mushtaq, Shahbaz Ahmad, Towseef Ahmad, Mohd Zubair Ansari","doi":"10.1007/s10854-025-14649-7","DOIUrl":"10.1007/s10854-025-14649-7","url":null,"abstract":"<div>This study explores the cost-effective solvothermal synthesis of Cu2ZnSnS4 (CZTS) nanomaterials by optimizing solvothermal temperature parameters. The optical absorption spectrum of CZTS nanomaterials demonstrates absorption within the visible spectrum, with the optical band gap of the synthesised sample series measured in the range (1.46–1.59) eV, indicating its potential suitability for photocatalytic degradation when exposed to visible light irradiation. The crystallinity and phase purity were confirmed through X-Ray Diffraction (XRD), revealing that the crystallite size increases with an increase in solvothermal temperature. Raman spectroscopy was conducted to complement the findings of X-ray diffraction. The purity of the CZTS nanomaterial is evidenced by the absence of any other elemental traces in the EDS pattern. XPS studies indicate the oxidation states and the atomic percentage ratio of Cu:Zn:Sn:S is approximately 2:1:1:4 with significant accuracy.. Cu2ZnSnS4 (CZTS), composed of elements that are both abundant and environmentally friendly namely copper, zinc, tin, and sulphur. CZTS presents a promising candidate for applications in environmental remediation, particularly in the degradation of dyes, in addition to its potential in photovoltaic technologies. The photocatalytic activity of CZTS has been examined via the photodegradation of Malachite green dye, resulting in a rate constant (k) of 0.0095 min⁻1.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of the maximum furnace temperature on the crystallization quality and photoelectric properties of GaInSb crystals grown with the traveling heater method

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-23 DOI: 10.1007/s10854-025-14774-3

Jian Liu, Chong Wang, Bowen Wang, Shuoyan Zhai, Leran Zhao, Ming Liu, Weirong Xing, Lifang Nie, Juncheng Liu

{"title":"The effect of the maximum furnace temperature on the crystallization quality and photoelectric properties of GaInSb crystals grown with the traveling heater method","authors":"Jian Liu, Chong Wang, Bowen Wang, Shuoyan Zhai, Leran Zhao, Ming Liu, Weirong Xing, Lifang Nie, Juncheng Liu","doi":"10.1007/s10854-025-14774-3","DOIUrl":"10.1007/s10854-025-14774-3","url":null,"abstract":"<div>Ga1−xInxSb (0 < x < 1) single crystals can be used as the substrates to epitaxially grow a variety of components required for high-performance infrared detectors and lasers. Ga0.92In0.08Sb crystals (25 mm diameter, 120 mm length) were prepared with both the vertical Bridgman (VB) and the traveling heater method (THM). The effects of the maximum furnace temperature on the structures and photoelectric properties of GaInSb crystal were investigated. Compared with the VB, the THM reduced the In element segregation and dislocation density of the GaInSb crystal, and improved its photoelectric properties. Moreover, the crystallization quality of GaInSb crystal improved with the decrease of the maximum furnace temperature of the THM. The axial segregation of In element in the GaInSb crystals decreased from 0.110 mol%/mm to 0.081 mol%/mm, while the radial segregation increased from 0.057 mol%/mm to 0.089 mol%/mm. And the dislocation density reduced from 3.295 × 103 cm−2 to 2.604 × 103 cm−2. The carrier concentration increased from 1.254 × 1018 cm−3 to 1.463 × 1018 cm−3, the carrier mobility increased from 1422 cm2/(V·s) to 1676 cm2/(V·s), and the resistivity reduced from 1.617 × 10–3 Ω cm to 1.393 × 10– Ω cm. And the infrared transmittance of GaInSb crystal improved from 43 to 47%.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the relaxation behavior and energy storage properties of (Bi0.88La0.12)ScO3-modified Bi0.5Na0.46Li0.04TiO3 ceramics (Bi0.88La0.12)ScO3改性Bi0.5Na0.46Li0.04TiO3陶瓷的弛豫行为和储能特性研究

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-22 DOI: 10.1007/s10854-025-14746-7

Zhongrui Du, Qiyi Yin, Hui Zhang, Hao Zu, Chen Chen, Fan Si, Fei Lin, Xiangyu Zhu, Yulin Zhang, Kunhong Hu, Lu Li, Fulin Zhang, Yunhui Meng

{"title":"Study on the relaxation behavior and energy storage properties of (Bi0.88La0.12)ScO3-modified Bi0.5Na0.46Li0.04TiO3 ceramics","authors":"Zhongrui Du, Qiyi Yin, Hui Zhang, Hao Zu, Chen Chen, Fan Si, Fei Lin, Xiangyu Zhu, Yulin Zhang, Kunhong Hu, Lu Li, Fulin Zhang, Yunhui Meng","doi":"10.1007/s10854-025-14746-7","DOIUrl":"10.1007/s10854-025-14746-7","url":null,"abstract":"<div>Excellent power density, quick charge/discharge rates, and great energy storage capacity of lead-free dielectric ceramic capacitors have drawn a lot of interest. In this work, doping with Bi0.88La0.12ScO3 (BLS) enhanced the relaxation behavior and energy storage characteristics of Bi0.5Na0.46Li0.04TiO3 (BNLT)-based ceramics. Grain size was greatly lowered from 3.4 to 1.79 μm and XRD and SEM studies revealed that the doped La3+ and Sc3+ ions were effectively integrated into the matrix lattice. The relaxable index of the ceramics reached 1.92 as the BLS doping content rose; likewise, the recovered energy density (Wrec) and energy efficiency (η) improved. Excellent energy storage properties (Wrec = 5.62 J/cm3, η = 81%) were shown by the BNLT-0.09BLS ceramic under a field strength of 350 kV/cm. In the temperature range of 30 to 200 °C and frequency range of 5 to 150 Hz, it also displayed good frequency stability and thermal stability. Moreover, charge/discharge experiments showed that the ceramic has an ultra-fast discharge rate (t0.9 = 0.18 μs). These outstanding comprehensive characteristics of BNLT-0.09BLS ceramics provide a valuable source of reference for the design of effective dielectric capacitors.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scalable growth and transfer of large-area MoS2 film on IDE structures for photo-detector application

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-22 DOI: 10.1007/s10854-025-14697-z

Ajay Kumar, Prashant Kumar, Radhapiyari Laishram, Shivnath Kumar, J. S. Rawat, Amit Jain

{"title":"Scalable growth and transfer of large-area MoS2 film on IDE structures for photo-detector application","authors":"Ajay Kumar, Prashant Kumar, Radhapiyari Laishram, Shivnath Kumar, J. S. Rawat, Amit Jain","doi":"10.1007/s10854-025-14697-z","DOIUrl":"10.1007/s10854-025-14697-z","url":null,"abstract":"<div>A large-area centimeter-scale (2 cm × 1 cm) high-quality continuous MoS2 film was grown on a SiO2/Si substrate via the Chemical Vapor Deposition (CVD) technique to ensure the scalability and uniformity of the MoS2 film across a large area, rendering it suitable for wafer-scale applications. We further establish the transfer of MoS2 film from the grown substrate (SiO2/Si) to Interdigitated Electrodes (IDE) structures fabricated on GaAs substrate via a wet etching process utilizing Hydrogen Fluoride (HF) solution, effectively removing the MoS2 layer from SiO2/Si substrate within 2–3 min, while preserving the structural integrity and quality of the MoS2 film. Characterization studies involving Raman analysis, Photoluminescence (PL) mapping, SEM imaging, and optoelectronics measurements confirm the high quality and integrity of the transferred MoS2 film onto IDE structures fabricated on GaAs substrate for photodetection application. Optoelectronic measurements revealed a significant responsivity enhancement from 2.13 to 26.4 mA/W at a 20 V bias under 780 nm laser illuminations (5 mW), due to the incorporation of gold nanoparticles between the IDE fingers by employing RF sputtering. Thus, integrating nanoparticles in the active region of optoelectronic devices can markedly enhance the optical efficiency of 2D material-based optoelectronic systems. Overall, this CVD technique presents a viable approach for the scalable production of large-area MoS2 films and their transfer onto fabricated structures, opening avenues for the integration of MoS2 films into advanced technological devices and systems, particularly in micro and Nano-electromechanical systems.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation on electrochemical sensing behavior of hydrogen peroxide using tin dioxide (SnO2) nanoparticles

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-22 DOI: 10.1007/s10854-025-14754-7

S. S. Beenaben, Radha Sankararajan, Mythili Kumaresan

{"title":"Investigation on electrochemical sensing behavior of hydrogen peroxide using tin dioxide (SnO2) nanoparticles","authors":"S. S. Beenaben, Radha Sankararajan, Mythili Kumaresan","doi":"10.1007/s10854-025-14754-7","DOIUrl":"10.1007/s10854-025-14754-7","url":null,"abstract":"<div>Hydrogen peroxide (H2O2) plays a vital role in various aspects of daily life, such as food, health, and the environment. Foods containing excessive quantities of H2O2 residue may have harmful impacts on human health. In this work, tin dioxide nanoparticles (SnO2NPs) were synthesized by a hydrothermal method and subsequently characterized using an X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Field emission scanning electron microscope (FESEM), and Energy-dispersive X-ray analysis (EDAX). An electrochemical sensor for analyzing hydrogen peroxide (H2O2) was developed by immobilizing tin dioxide nanoparticles onto a graphite electrode (SnO2/GE). The electrocatalytic behavior of the developed electrochemical sensor was studied using cyclic voltammetry (CV) and differential pulse voltammetry (DPV). The results indicated that the SnO2/GE exhibits notable electrocatalytic oxidation and reduction capabilities for detecting and quantifying H2O2. The DPV technique determined parameters included linear range of 1–5 μM, a detection limit is 0.196 μM, and a qualification limit is 2.38 μM for the reduction peak with correlation coefficient R2 is 0.98. The stability of the sensor is measured for five days and has 98.7% of stability. The highest current is measured at pH 7. The developed sensor was successfully used to detect trace levels of H2O2.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Anand-type constitutive model to predict the deformation behavior of Sn3.0Ag0.5Cu under different temperature and strain rates

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-22 DOI: 10.1007/s10854-025-14762-7

Xuexia Yang, Yijie Du, Zhaoyun Liu, Shuai Shi, Chao Chang

{"title":"An Anand-type constitutive model to predict the deformation behavior of Sn3.0Ag0.5Cu under different temperature and strain rates","authors":"Xuexia Yang, Yijie Du, Zhaoyun Liu, Shuai Shi, Chao Chang","doi":"10.1007/s10854-025-14762-7","DOIUrl":"10.1007/s10854-025-14762-7","url":null,"abstract":"<div>This study investigates the compressive mechanical behavior of Sn3.0Ag0.5Cu (SAC305) lead-free solder under varying temperature and strain rate conditions. Compression tests were performed using an electronic universal testing machine across four distinct temperatures (20 °C, 60 °C, 100 °C, and 140 °C) and five different strain rates((1times {10}^{-3}{s}^{-1}),(5times {10}^{-4}{s}^{-1}), (2times {10}^{-4}{s}^{-1}),(8times {10}^{-5}{s}^{-1}), (5times {10}^{-5}{s}^{-1})) Stress–strain curve of SAC305 obtained by constant temperature compression test. The Anand viscoplastic model was applied to fit the experimental data, analyzing temperature and strain rate effects on the mechanical properties of material. The results demonstrate that SAC305 exhibits strong dependence on both temperature and strain rate. Specifically, yield stress decreases with an increase in temperature, while it increases with higher strain rates. Notably, the temperature effect is more pronounced than the strain rate effect. Moreover, the Anand viscoplastic model, when fitted to the experimental data, shows excellent agreement with the observed stress–strain behavior, confirming its suitability for predicting the mechanical response of SAC305 solder under diverse thermal and strain rate conditions. These findings provide a theoretical foundation for subsequent simulation studies on the thermal-vibration coupling performance of SAC305 lead-free solder joints.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Luminescence improvement of Ce3+-doped Lu2CaMg2Si3O12 orange phosphor for WLED based on Ca vacancy 基于 Ca 空位改善用于 WLED 的掺有 Ce3+ 的 Lu2CaMg2Si3O12 橙荧光粉的发光性能

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-22 DOI: 10.1007/s10854-025-14758-3

Yingkai Fu, Yubo Feng, Kaiyang Li, Yuhan Yan, Runtao Chen, Yuwen Peng, Weijie Li, Yang Zheng, Xu Qian, Jianying Ding, Quan Liu

{"title":"Luminescence improvement of Ce3+-doped Lu2CaMg2Si3O12 orange phosphor for WLED based on Ca vacancy","authors":"Yingkai Fu, Yubo Feng, Kaiyang Li, Yuhan Yan, Runtao Chen, Yuwen Peng, Weijie Li, Yang Zheng, Xu Qian, Jianying Ding, Quan Liu","doi":"10.1007/s10854-025-14758-3","DOIUrl":"10.1007/s10854-025-14758-3","url":null,"abstract":"<div>Phosphors for white light emitting diode (WLED) have kept catching the researchers’ attention. Herein, Ce3+-activated garnet Lu2CaMg2Si3O12 orange phosphor was synthesized and Ca content was decreased to create Ca vacancy into the lattice to further improve the luminescence properties. XRD patterns and Rietveld refinement were executed to investigate the effect of Ca vacancy on the lattice structure. The synthesized phosphors exhibited broad excitation band in blue region and broad emission band ranging from 530 to 750 nm. Via creating Ca vacancy into the lattice both the emission and the thermal stability of Ce3+-doped Lu2CaMg2Si3O12 were improved. Quantum efficiency of the optimized sample Lu2Ce0.06Ca0.95Mg2Si3O12 reaches 84.7%. Optimized Lu1.94Ce0.06Ca0.95Mg2Si3O12 was mixed with the cyan phosphor Ca3Sc2Si3O12:Ce3+ and spread on the blue chip to fabricate WLED device, showing high color rendering index 86.6 and correlated color temperature 4404 K. This work provides a simple strategy to improve the luminescence property of Lu2CaMg2Si3O12:Ce3+ and a thermally stable orange phosphor for WLED.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A microrod-based photoconductivity enhancement in copper antimony selenide PIN photodetector

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-21 DOI: 10.1007/s10854-025-14772-5

M. Irshad Ahamed, M. Suganthi Priya, Salahaldeen Duraibi, Saahira Banu Ahamed

{"title":"A microrod-based photoconductivity enhancement in copper antimony selenide PIN photodetector","authors":"M. Irshad Ahamed, M. Suganthi Priya, Salahaldeen Duraibi, Saahira Banu Ahamed","doi":"10.1007/s10854-025-14772-5","DOIUrl":"10.1007/s10854-025-14772-5","url":null,"abstract":"<div>A P-type semiconductor namely CuSbSe2 developed in the recent times has acquired a lot of attention because of its low cost promising optoelectronic features and widely abundant precursor elements. This study explores CuSbSe2 photodetector based on a microrod designed with the help of simple separation approach from crystals which have 150–300 μm thickness. In comparison to thin film-based device (D1), microrod-based device (D2) performs more efficiently as it is more responsive and operates in a self-bias manner. D2 displayed an enhanced responsivity with a value of 0.27 A/W with 31% of EQE (External Quantum Efficiency) at 1064 nm wavelength and 15 mW/cm2 power density. Moreover 532 nm, 0.038 A/W responsivity with 9% EQE was achieved by D2 under 32 mW/cm2. The time taken by D2 to respond or recover at 1064 nm was 68.7 and 35.1 ms and at 532 nm was 15.7 and 41.2 ms. This operation is self-powered and is implemented at 0.02 V which is a lower value of bias. The findings of this research will be reveal that microrods of CuSbSe2 offer significantly enhanced performance and responds at a faster pace with higher sensitivity. The above properties find them apt for low cost, self-powered optoelectronic applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved densification, cubic phase stability and ionic conductivity of Ga/Mo co-doped Li7La3Zr2O12 electrolytes suppressed abnormal grain growth

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-21 DOI: 10.1007/s10854-025-14749-4

Rui Mei, Feng Yan, Sizheng Hu, Zonggui Gong, Haoxuan Guo, Qijing Wang, Xinghua Zheng

{"title":"Improved densification, cubic phase stability and ionic conductivity of Ga/Mo co-doped Li7La3Zr2O12 electrolytes suppressed abnormal grain growth","authors":"Rui Mei, Feng Yan, Sizheng Hu, Zonggui Gong, Haoxuan Guo, Qijing Wang, Xinghua Zheng","doi":"10.1007/s10854-025-14749-4","DOIUrl":"10.1007/s10854-025-14749-4","url":null,"abstract":"<div>With the increasingly urgent safety requirement of lithium-ion batteries, more and more attention has been paid to Li7La3Zr2O12 (LLZO)-based solid electrolytes with high ion conductivity and excellent electrochemical performance. Unfortunately, owing to the serious “Li-loss” and the abnormal grain growth (AGG) during the long-time high-temperature sintering process, it is difficult to achieve the high-quality LLZO electrolyte with uniform and fine grains, high density and excellent electrochemical performance. In this work, Ga/Mo co-doped LLZO solid-state electrolytes have been prepared by traditional sintering (TS) and two-step sintering (TSS). And the sintering mechanism, phase stability, microstructure evolution, and electrochemical performance have been systematically investigated. A small amount of Ga/Mo doping not only promotes the formation of the cubic garnet LLZO phase, but also enhances the stability of cubic phase. High density of 92.3% and uniform microstructure without AGG have been achieved via a small amount of Ga doping and TSS. Li6.3Ga0.1La3Zr1.8Mo0.2O12 electrolytes, prepared by TSS of 1200 °C/15 min-1100 °C/8 h, exhibits high ion conductivity of 2.59 × 10–4 S·cm−1 and critical current density (CCD) value of 0.5 mA·cm−2, low electric conductivities of 4.77 × 10–9 S·cm−1, which suggests it is a potential electrolyte to apply in all-solid-state batteries.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic field oriented nanocellullose-based composite for human motion monitoring

IF 2.8 4区工程技术

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-21 DOI: 10.1007/s10854-025-14752-9

Arsenii Naidonov, Viktoriia Koval, Valerii Barbash, Mykhailo Dusheiko

引用次数: 0