Journal of Materials Science: Materials in Electronics最新文献

{"title":"Transport and mechanical properties of in-situ MgB2/Fe wires produced by initial boriding process","authors":"Firat Karaboga,&nbsp;Dogan Avci,&nbsp;Hakan Yetis,&nbsp;Ibrahim Belenli","doi":"10.1007/s10854-025-14598-1","DOIUrl":"10.1007/s10854-025-14598-1","url":null,"abstract":"<div><p>This study examines the impact of a pre-boron diffusion process (boriding) on the mechanical properties of unreacted Mg + 2B/Fe wires. Boriding was performed by filling iron tubes with amorphous boron powder and heat-treating them at 850 °C and 950 °C. The primary goal was to reduce the need for intermediate heat treatment during cold drawing and increase the core density of in-situ MgB₂/Fe wires by forming hard iron boride phases in advance. Tensile strength, microhardness, and scanning electron microscopy were employed to assess the mechanical properties of the wires. Additionally, the structural and transport properties of reacted in-situ MgB₂/Fe mono-core superconducting wires were investigated for various sintering temperatures and times. The results are interpreted in terms of the formation of iron boride (FeB/Fe₂B) phases at the core/iron sheath interface region and the diffusion of boron within the superconducting core.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14598-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143698550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pressureless Cu@Ag sintering process with formic acid reducing agent for improved bonding of power semiconductors","authors":"Myeonghyeon Jeon,&nbsp;Dajung Kim,&nbsp;Chulmin Oh","doi":"10.1007/s10854-025-14584-7","DOIUrl":"10.1007/s10854-025-14584-7","url":null,"abstract":"<div><p>Ag and Cu are widely used sintering materials as alternatives to traditional soldering. In particular, Cu@Ag (Ag-coated Cu) has gained increasing attention as a cost-effective option. However, oxidation during the sintering of Cu@Ag and Cu DBC substrates can decrease joint strength and reliability. The addition of formic acid during the sintering process has been explored to mitigate oxidation and promote necking growth. In this study, pressureless sintering was performed using Cu@Ag to examine the effects of formic acid during the sintering process. Upon printing Cu@Ag paste on a Cu DBC substrate, an Si chip was placed on it, and sintering was performed at 300 °C in a nitrogen atmosphere. The process was tested under three conditions: introducing formic acid during pre-heating, introducing formic acid during sintering, and a control group without formic acid. The shear strength of the samples was measured post sintering. Scanning electron microscopy was used to analyze the microstructure of the sintered joints, including surface, cross-sections, and fracture surfaces after shearing. The shear strength of the sample in which formic acid was introduced during pre-heating was 1.3 times higher, measuring 21.54 MPa, compared to the condition without formic acid. This finding aligns with microstructural analysis, which showed enhanced necking formation between Cu@Ag particles. This study presents optimized pressureless sintering conditions for Cu@Ag paste, which is expected to be applicable to high-performance power module packages.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and optical properties of PVB/ZnS nanocomposite films","authors":"Nasser Almutlaq,&nbsp;A. Ibrahim,&nbsp;M. M. Abdelhamied,&nbsp;A. M. A. Henaish","doi":"10.1007/s10854-025-14618-0","DOIUrl":"10.1007/s10854-025-14618-0","url":null,"abstract":"<div><p>Herein, three nanocomposite films based on polyvinyl butyral (PVB) and zinc sulfide (ZnS) have been synthesized via the solution-casting technique. This study, for the first time, investigated the effect of ZnS nanoparticles (NPs) with different percentages (0, 1, 2, and 3 wt.%) on the structural, linear/non-linear optical, and dispersion properties of PVB/ZnS nanocomposite films. XRD study confirms the successful synthesis of ZnS NPs and ZnS-reinforced PVB nanocomposite films. The bandgap for ZnS-reinforced PVB nanocomposite decreases from 5.54 eV to 4.95, 4.85, and 4.78 eV with increasing the ZnS percentage. Conversely, The band tail increased from 0.73 eV of the pure PVB to 0.83, 0.82, and 0.91 eV with increasing the ZnS percentage. The optical conductivity increased from 0.8 × 10¹¹ s/cm² to 2.45 × 10¹² s/cm². Also, the <i>N</i>/<i>m</i>* value increases from 0.23 × 10³⁹ kg⁻¹ m⁻³ to 0.28 × 10³⁹ kg⁻¹ m⁻³ with increasing ZnS contents. The optical mobility also increased from 0.067 × 10¹³ s⁻¹ for PVB to 0.081 × 10¹³ s⁻¹ for PVB/ZnS-III film. The values of <i>χ</i>⁽¹⁾ and <i>χ</i>⁽³⁾ increase as the influence of incorporating ZnS concentration increases. These results confirm that the ZnS-reinforced PVB nanocomposite films are candidates for non-linear optical applications and are more valuable for optoelectronic devices than pure PVB.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143698547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Physical insight in thermophysical features of gamma-irradiated PVA/Al2O3 films","authors":"A. M. Abd El-Lateef,&nbsp;M. F. Zaki,&nbsp;Sh. I. Elkalashy","doi":"10.1007/s10854-025-14508-5","DOIUrl":"10.1007/s10854-025-14508-5","url":null,"abstract":"<div><p>Herein, the synthesis and characteristics of polyvinyl alcohol (PVA) membrane reinforced with different alumina (Al₂O₃) nanoparticle concentrations before and after 100 kGy gamma irradiation for optoelectronic applications are described. FTIR spectra display the samples underwent discernible changes in their spectral structure because of the doping with Al₂O₃ followed by gamma exposure. This is due to the interaction between Al₂O₃ nanoparticles and the polymer matrix, which leads to the emergence of new absorption bands and a rise in the intensity of existing ones. SEM micrographs revealed that a dispersed collection of Al₂O₃ nanoparticles by homogeneity is present in the PVA matrix. Due to gamma exposure, the shape of the PVA/Al₂O₃ nanocomposite varies due to defects. Thermogravimetric analysis was used to evaluate thermal stability. Optical evaluations were carried out in the wavelength (200–1100 nm). It was shown that higher concentrations of Al₂O₃ followed by 100 kGy gamma-ray lead to the reduction in transmittance and higher absorbance levels in the PVA/Al₂O₃ membrane, especially in the UV-band. As the Al₂O₃ concentration grew, the direct and indirect bandgaps close from 5.40 to 5.30 eV and from 4.90 to 4.62 eV, respectively. After 100 kGy gamma-ray exposure the direct and indirect bandgaps dropped from 4.88 to 4.67 eV and from 4.02 to 3.63 eV, respectively. The improved optical parameters, specifically in terms of absorbance and bandgap manipulation, highlight the versatility of these nanostructures in various optoelectronic applications. It is noteworthy that there is an influence on the surface roughness parameters of the PVA membrane by Al₂O₃ nanoparticles and gamma exposure. As a result, the nanoparticles are nearly dispersed in the layer nearest the film surface, causing morphological changes as chemically active clusters and defects form on the membrane surface.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modulation on dielectric properties of epoxy laminates by hyperbranched cyanate ester","authors":"Yuhang Wu,&nbsp;Xiaorui Zhang,&nbsp;Hang Xu,&nbsp;Jiahao Shi,&nbsp;Ling Weng,&nbsp;Chenghao Zhao,&nbsp;Liqiu Hao,&nbsp;Hengyan Lu","doi":"10.1007/s10854-025-14615-3","DOIUrl":"10.1007/s10854-025-14615-3","url":null,"abstract":"<div><p>In response to the demands of the current era characterized by high-speed communication, achieving superior signal integrity in high-frequency and high-speed circuits necessitates imposing stringent requirements on various properties of electronic devices, including a low dielectric constant, minimal loss at high frequencies, and superior mechanical properties. In this study, trimethylolpropane (TMP) was utilized as the core, and bisphenol A cyanate ester (CE) was employed as the grafting monomer. A hyperbranched cyanate ester (HBCE) was synthesized by integrating the –OCN groups of TMP and CE with –OH. Subsequently, a novel laminated board was fabricated by modifying epoxy resin (EP) with the synthesized hyperbranched cyanate ester. The hyperbranched structure of HBCE was comprehensively characterized using nuclear magnetic resonance and Fourier-transform infrared spectroscopy. Dielectric performance evaluations revealed that HBCE effectively reduces both the dielectric constant and the dielectric loss of the laminate. At 10⁶ Hz, the dielectric constant of the EP-HBCE-15wt% laminate is 3.108, with a dielectric loss of 0.00615. The reduction in dielectric constant is attributed to an increase in the free volume fraction within the system and a decrease in the content of polarized functional groups. The bending strength of EP-HBCE-15wt% laminate reaches 503 MPa, and the bending modulus reaches 14.5 GPa. The insulation and mechanical tests results indicate that the laminated board exhibits excellent performance characteristics, meeting the stringent standards required for electronic-grade copper-clad laminates.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143698549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface hydroxylation of polymer-derived SiCN ceramics to improve the dielectric performance of the SiCN/PVDF composites","authors":"Weiye Zhang,&nbsp;Dandan Sun,&nbsp;Jiahe Shen,&nbsp;Weiliang Liu,&nbsp;Jiale Yang","doi":"10.1007/s10854-025-14531-6","DOIUrl":"10.1007/s10854-025-14531-6","url":null,"abstract":"<div><p>Dielectric capacitors have attracted considerable attention in recent years due to their safety, environmental friendliness, high power density, and long service life. However, constrained by the limitations of dielectric materials, the energy storage density of the dielectric capacitors remains suboptimal. Therefore, the development of novel high-performance dielectric materials is imperative. In this work, surface-hydroxylated SiCN ceramics (H-SiCN) were employed as fillers, and H-SiCN/PVDF composites displaying superior dielectric attributes and considerable energy storage density were attained via a hot-pressing technique. After the surface hydroxylation of SiCN, the permittivity of the H-SiCN/PVDF composites increases slightly, the dielectric loss decreases, and the breakdown strength enhances significantly. When the volume fraction of H-SiCN is 20 vol%, the H-SiCN/PVDF composite film achieves the maximum energy storage of 12.23 J cm⁻³, which is increased by 101.2% compared to that of the SiCN/PVDF composite film. Robust hydrogen bonds are formed between the F atoms of PVDF and the hydroxyl groups on the surface of SiCN, which strengthens the interfacial combination between them and promotes polarization intensity. This work may provide reference significance for the design of high-performance dielectric materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation on structural, optical, vibrational, and ferroelectric properties of lead-free (1-x)Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 ceramics","authors":"Sasmita Otta,&nbsp;Rajat Kumar Das,&nbsp;Laxman Kand,&nbsp;Santosh Kumar Parida,&nbsp;Kamal Lochan Mohanta,&nbsp;Binod Kumar Roul,&nbsp;Bhagaban Kisan","doi":"10.1007/s10854-025-14553-0","DOIUrl":"10.1007/s10854-025-14553-0","url":null,"abstract":"<div><p>The single-phase ceramic sample (1-<i>x</i>)Ba(Ti_0.8Zr_0.2)O₃-<i>x</i>(Ba_0.7Ca_0.3)TiO₃ (<i>x</i> = 0.4 and 0.6) was prepared using a solid-state reaction method. The prepared sample shows mixed phase of the tetragonal and rhombohedral crystal structure from XRD. The phase transition from tetragonal to rhombohedral is caused by the red shifting of the vibration B₁/E(TO₃)/E(LO₂) mode at low temperatures Raman study. Further, the permittivity and electrical conductivity values show the presence of a three-phase transition between Rhombohedral-orthorhombic around ~ 50 °C orthorhombic-tetragonal at around ~ 250 °C and tetragonal-cubic at about ~ 350 °C. The dielectrcic value <i>ε</i>_r = 600 for <i>x</i> = 0.6 and high <i>ε</i>_r = 980 for <i>x</i> = 0.4 at 500 °C at low-frequency region and obtained co-exsistence of phases for <i>x</i> = 0.4. The PL spectra showed indications of rhombohedral structure in the sample. So this material could be applicable for the microelectronic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, optical and electrical properties of Al-doped TiO2 and NiO thin films synthesized via chemical bath deposition","authors":"Dibya Mohan Badamali,&nbsp;Kalash Kumari,&nbsp;Sahana Nagappa Moger,&nbsp;P. Puneeth Kumar,&nbsp;P. Praveen Prakash Dsouza,&nbsp;V. K. Ashith","doi":"10.1007/s10854-025-14604-6","DOIUrl":"10.1007/s10854-025-14604-6","url":null,"abstract":"<div><p>The pure and aluminium (Al) doped titanium oxide (TiO₂) and nickel oxide (NiO) thin films were prepared by chemical bath deposition. The films were prepared for different aluminium concentrations, i.e., 2%, 4%, 6% and 8%, respectively. The XRD patterns of the Al-doped TiO₂ and NiO films showed hexagonal and cubic phases with polycrystalline. The crystallite size of the films was varied with Al doping. The absorbance of the films was improved with aluminium doping for TiO2 and NiO films. The bandgap of the films ranged m 3.1 to 2.8 eV for TiO₂ and 3.7 eV to 3.3 eV for NiO with aluminium doping. In both films, the electrical resistivity and carrier concentration varied with the aluminium doping concentration.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and wave-absorbing properties of OPCS@CoFe2O4 core–shell structured wave-absorbing materials with multiple loss mechanisms","authors":"Jiahao Cui,&nbsp;Dong Zhao,&nbsp;Fengcao Zhang,&nbsp;Qianyi Feng,&nbsp;Xinyu Zhu,&nbsp;Junyan Zhou,&nbsp;Zhongqing Liu","doi":"10.1007/s10854-025-14563-y","DOIUrl":"10.1007/s10854-025-14563-y","url":null,"abstract":"<div><p>Great concerns have arisen in wave-absorbing materials due to the increasing number of electromagnetic wave pollution. Porous carbon microspheres (PCS) are considered an excellent wave-absorbing material due to their unique hollow porous structure, but their loss mechanism is relatively single. The aim of present study was to investigate how to enrich the loss mechanism of PCS as well as to expand its absorption bandwidth. In this work, we prepared oxidized porous carbon microspheres (OPCS) with multiple loss mechanisms by chemical etching of PCS using potassium permanganate, on this basis, OPCS@CoFe₂O₄ magnetic composites with core–shell structure and magnetic-dielectric dual-loss mechanism were prepared by one-step hydrothermal method. With the minimum reflection loss (RL_min) of -45.42 dB at the matched thickness of 2.3 mm, and the effective absorption bandwidth (EAB) of 6.3 GHz at the matched thickness of 2.5 mm. Therefore, the present study provides ideas and references for the preparation of wave-absorbing materials with multiple loss mechanisms to realize broadband absorption.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of potassium doping on the structural, optical, and optoelectrical properties of ZnS thin films for photovoltaic applications","authors":"Reim A. Almotiri","doi":"10.1007/s10854-025-14605-5","DOIUrl":"10.1007/s10854-025-14605-5","url":null,"abstract":"<div><p>Zinc sulfide (ZnS) is an important n-type semiconductor exhibiting remarkable electrical and optical properties. The present study used the nebulizer spray pyrolysis technique to produce undoped and potassium-doped ZnS thin films using an economical spray pyrolysis method at different potassium concentrations (2.5, 5, and 7.5 wt%). The XRD results indicate a hexagonal structure for ZnS and potassium-doped ZnS thin films. Examining the structural characteristics reveals that the crystallite size (<i>D</i>) of the ZnS and potassium-doped ZnS films was expanded as the potassium content was elevated from 2.5 to 7.5 wt%. The strain and dislocation density of the examined potassium-doped ZnS layers were diminished by augmenting the potassium concentration in the ZnS films. The linear optical parameters of the examined potassium-doped ZnS films were estimated by recording the reflectance and transmittance spectra in the wavelength 200–2500 nm. The refractive index values of the potassium-doped ZnS layers were enhanced by raising the potassium concentration in the studied samples. Moreover, the energy gap (<i>E</i>_<i>g</i>) calculations refer to the ZnS and potassium-doped ZnS films having direct optical transition, and the <i>E</i>_<i>g</i> values were reduced from 3.64 to 2.97 eV by the increase in the potassium concentration. The Wemple and DiDomenico model study shows that the dispersion energy and oscillator strength of the examined potassium-doped ZnS layers were boosted by raising the potassium concentration while the oscillator energy was dropped. The optoelectrical indices analysis displays the enhancement of the plasma frequency, optical mobility, optical carrier concentration, electrical conductivity, and optical dielectric constants while enlarging the potassium concentration. Meanwhile, the boost in potassium contents enhances the nonlinear absorption coefficient and nonlinear refractive index of the ZnS and potassium-doped ZnS films. The hot probe procedure refers to these samples as n-type semiconductors. The results indicated that these samples could be used as a new window layer for solar cells.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143676259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}