Ni杂质对BiVO4结构相的影响,用于增强无粘结剂伏安香兰素传感、光催化和潜在指纹研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
T. L. Soundarya, B. T. Jyothi Prasad, J. Sanjay, B. Nirmala, Mohd Shkir, G. Nagaraju, R. Harini
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引用次数: 0

摘要

在现代技术研究领域,为解决环境监测和法医调查以及食品质量评估方面的当代挑战而创造先进材料是非常重要的。因此,对具有创新设计的多功能材料的需求很高。在这项研究中,采用一种简单的技术,以葡萄糖作为还原剂合成了ni掺杂BiVO4 (NBV)纳米颗粒(NPs)。通过在BiVO4 (BV)中加入2%、4%、8%和10%的掺杂,并利用XRD、UV-vis、FT-IR、SEM、PEIS和PL等表征技术比较BV的特征性质,研究掺杂对BiVO4 (BV)结构转变的影响。随着掺杂剂Ni的加入,BiVO4发生相变,保留了原来的单斜相,同时引入了另一种相,如四方相。这导致了双相系统的稳定,从而改变了电化学和光学性质。所合成的NPs的带隙在1.50 ~ 4.0 eV之间,其中掺4% ni的BiVO4 (4 NBV)的带隙很低,为1.57 eV。4 NBV修饰的GCE对香兰素的检测具有很高的灵敏度,检测限为99 nM,灵敏度为81.21 a /M,具有广泛的分析应用价值。NPs在488nm处的光致发光特性突出了其光电子器件的绿蓝色发射光学特性,以及通过开发可见的,定义明确的潜在指纹进行先进的法医研究。NBV具有优异的光催化性能,在降解亚甲基蓝等有机污染物方面表现出100%的效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The influence of Ni impurities on the structural phase of BiVO4 for enhanced binder-free voltammetric vanillin sensing, photocatalysis, and latent fingerprint studies

The creation of advanced materials for addressing contemporary challenges in environmental monitoring and forensic investigations, as well as in food quality assessment, is very important in the modern technology research field. Hence, there is a high demand for multifunctional materials with innovative designs. In this study, a facile technique is used to synthesize Ni-doped BiVO4 (NBV) nanoparticles (NPs) using glucose as a reducing agent. The effect of doping and the structural transformation was studied by introducing different dopant percentages, such as 2%, 4%, 8%, and 10% Ni, into BiVO4 (BV) and comparing the characteristic properties of BV using characterization techniques such as XRD, UV–vis, FT-IR, SEM, PEIS, and PL. With the addition of dopant Ni, a phase transformation of BiVO4 occurs, retaining its original monoclinic phase while introducing another phase, such as tetragonal. This leads to the stabilization of a dual-phase system that alters the electrochemical and optical properties. The band gaps of the synthesized NPs are found to be in the range of 1.50–4.0 eV, with 4% Ni-doped BiVO4 (4 NBV) showing a very low band gap of 1.57 eV. 4 NBV modified GCE shows a highly sensitive response for the detection of vanillin, with a detection limit of 99 nM and a sensitivity of 81.21 A/M, highlighting its versatility in analytical applications. The photoluminescence property of NPs at 488 nm highlights their optical properties with greenish-blue emission for optoelectronic devices as well as advanced forensic studies through the development of visible, well-defined latent fingerprints. 4 NBV exhibits excellent photocatalytic properties, demonstrating 100% efficiency in degrading organic contaminants such as methylene blue.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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