T. L. Soundarya, B. T. Jyothi Prasad, J. Sanjay, B. Nirmala, Mohd Shkir, G. Nagaraju, R. Harini
{"title":"Ni杂质对BiVO4结构相的影响,用于增强无粘结剂伏安香兰素传感、光催化和潜在指纹研究","authors":"T. L. Soundarya, B. T. Jyothi Prasad, J. Sanjay, B. Nirmala, Mohd Shkir, G. Nagaraju, R. Harini","doi":"10.1007/s10854-025-14876-y","DOIUrl":null,"url":null,"abstract":"<div><p>The creation of advanced materials for addressing contemporary challenges in environmental monitoring and forensic investigations, as well as in food quality assessment, is very important in the modern technology research field. Hence, there is a high demand for multifunctional materials with innovative designs. In this study, a facile technique is used to synthesize Ni-doped BiVO<sub>4</sub> (NBV) nanoparticles (NPs) using glucose as a reducing agent. The effect of doping and the structural transformation was studied by introducing different dopant percentages, such as 2%, 4%, 8%, and 10% Ni, into BiVO<sub>4</sub> (BV) and comparing the characteristic properties of BV using characterization techniques such as XRD, UV–vis, FT-IR, SEM, PEIS, and PL. With the addition of dopant Ni, a phase transformation of BiVO<sub>4</sub> occurs, retaining its original monoclinic phase while introducing another phase, such as tetragonal. This leads to the stabilization of a dual-phase system that alters the electrochemical and optical properties. The band gaps of the synthesized NPs are found to be in the range of 1.50–4.0 eV, with 4% Ni-doped BiVO<sub>4</sub> (4 NBV) showing a very low band gap of 1.57 eV. 4 NBV modified GCE shows a highly sensitive response for the detection of vanillin, with a detection limit of 99 nM and a sensitivity of 81.21 A/M, highlighting its versatility in analytical applications. The photoluminescence property of NPs at 488 nm highlights their optical properties with greenish-blue emission for optoelectronic devices as well as advanced forensic studies through the development of visible, well-defined latent fingerprints. 4 NBV exhibits excellent photocatalytic properties, demonstrating 100% efficiency in degrading organic contaminants such as methylene blue.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14876-y.pdf","citationCount":"0","resultStr":"{\"title\":\"The influence of Ni impurities on the structural phase of BiVO4 for enhanced binder-free voltammetric vanillin sensing, photocatalysis, and latent fingerprint studies\",\"authors\":\"T. L. Soundarya, B. T. Jyothi Prasad, J. Sanjay, B. Nirmala, Mohd Shkir, G. Nagaraju, R. Harini\",\"doi\":\"10.1007/s10854-025-14876-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The creation of advanced materials for addressing contemporary challenges in environmental monitoring and forensic investigations, as well as in food quality assessment, is very important in the modern technology research field. Hence, there is a high demand for multifunctional materials with innovative designs. In this study, a facile technique is used to synthesize Ni-doped BiVO<sub>4</sub> (NBV) nanoparticles (NPs) using glucose as a reducing agent. The effect of doping and the structural transformation was studied by introducing different dopant percentages, such as 2%, 4%, 8%, and 10% Ni, into BiVO<sub>4</sub> (BV) and comparing the characteristic properties of BV using characterization techniques such as XRD, UV–vis, FT-IR, SEM, PEIS, and PL. With the addition of dopant Ni, a phase transformation of BiVO<sub>4</sub> occurs, retaining its original monoclinic phase while introducing another phase, such as tetragonal. This leads to the stabilization of a dual-phase system that alters the electrochemical and optical properties. The band gaps of the synthesized NPs are found to be in the range of 1.50–4.0 eV, with 4% Ni-doped BiVO<sub>4</sub> (4 NBV) showing a very low band gap of 1.57 eV. 4 NBV modified GCE shows a highly sensitive response for the detection of vanillin, with a detection limit of 99 nM and a sensitivity of 81.21 A/M, highlighting its versatility in analytical applications. The photoluminescence property of NPs at 488 nm highlights their optical properties with greenish-blue emission for optoelectronic devices as well as advanced forensic studies through the development of visible, well-defined latent fingerprints. 4 NBV exhibits excellent photocatalytic properties, demonstrating 100% efficiency in degrading organic contaminants such as methylene blue.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 14\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s10854-025-14876-y.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14876-y\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14876-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The influence of Ni impurities on the structural phase of BiVO4 for enhanced binder-free voltammetric vanillin sensing, photocatalysis, and latent fingerprint studies
The creation of advanced materials for addressing contemporary challenges in environmental monitoring and forensic investigations, as well as in food quality assessment, is very important in the modern technology research field. Hence, there is a high demand for multifunctional materials with innovative designs. In this study, a facile technique is used to synthesize Ni-doped BiVO4 (NBV) nanoparticles (NPs) using glucose as a reducing agent. The effect of doping and the structural transformation was studied by introducing different dopant percentages, such as 2%, 4%, 8%, and 10% Ni, into BiVO4 (BV) and comparing the characteristic properties of BV using characterization techniques such as XRD, UV–vis, FT-IR, SEM, PEIS, and PL. With the addition of dopant Ni, a phase transformation of BiVO4 occurs, retaining its original monoclinic phase while introducing another phase, such as tetragonal. This leads to the stabilization of a dual-phase system that alters the electrochemical and optical properties. The band gaps of the synthesized NPs are found to be in the range of 1.50–4.0 eV, with 4% Ni-doped BiVO4 (4 NBV) showing a very low band gap of 1.57 eV. 4 NBV modified GCE shows a highly sensitive response for the detection of vanillin, with a detection limit of 99 nM and a sensitivity of 81.21 A/M, highlighting its versatility in analytical applications. The photoluminescence property of NPs at 488 nm highlights their optical properties with greenish-blue emission for optoelectronic devices as well as advanced forensic studies through the development of visible, well-defined latent fingerprints. 4 NBV exhibits excellent photocatalytic properties, demonstrating 100% efficiency in degrading organic contaminants such as methylene blue.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.