Identification of defects and impurities in hydrothermally grown ZnO single crystals by ESR

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
T. Abe, H. Osada
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引用次数: 0

Abstract

For the use of hydrothermally grown crystals in optoelectronic device applications, improved crystallinity and better control of resistivity are required. Resistivity depends on structural defects and impurities. Hydrothermal synthesis allows the mass production of ZnO single crystals at low cost. However, ZnO single crystals grown by this method still have impurities and defects. The green-yellow spectral emission observed in ZnO at room temperature is believed to be caused by defects and is attributed to the presence of oxygen vacancies or zinc interstitial atoms, but the cause is still unknown. We have cut a-plane, m-plane, and c-plane substrates from hydrothermally grown ZnO bulk single crystals and identified and studied the defects and impurities by electron spin resonance (ESR), luminescence lifetime, photoluminescence (PL), X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDS).

水热生长ZnO单晶中缺陷和杂质的ESR鉴定
为了在光电器件应用中使用水热生长晶体,需要提高结晶度和更好地控制电阻率。电阻率取决于结构缺陷和杂质。水热合成法可以低成本大批量生产ZnO单晶。然而,用这种方法生长的ZnO单晶仍然存在杂质和缺陷。在室温下ZnO中观察到的黄绿色光谱发射被认为是由缺陷引起的,归因于氧空位或锌间隙原子的存在,但原因尚不清楚。我们从水热生长的ZnO体单晶中切割出a面、m面和c面基底,并通过电子自旋共振(ESR)、发光寿命、光致发光(PL)、x射线衍射(XRD)和能量色散x射线能谱(EDS)对缺陷和杂质进行了鉴定和研究。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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