锰对MnxIn2S3+x(0≤x≤1.0)纳米粒子结构、形态和光学性能的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
C. Neela Mohan, T. Kasilingam, A. Dinesh,  E.Priyadharshini, Manikandan Ayyar, Lalitha Gnanasekaran, M. Santhamoorthy, Rajendra P. Patil, Munawar Iqbal
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引用次数: 0

摘要

控制纳米粒子的形貌和光学性质对于推进各种基于纳米材料的功能器件的发展至关重要,如光电、生物医学和储能器件。本文研究了热注射法制备的MnxIn2S3+x(0≤x≤1.0)纳米颗粒(NPs)的结构、形态和光学性质。油酸和十八烯分别作为封盖剂和非配位溶剂。从颜色由黄色(In2S3)变为深棕色(MnIn2S4)可以明显看出Mn2+离子的掺入。利用XRD、HR-TEM、XPS、UV-DRS和PL分析等多种光谱技术对纳米材料的结构、形态和光学性质进行了表征。XRD分析证实形成了立方In2S3和MnIn2S4晶体结构。XPS分析证实了MnIn2S4 NPs中元素的电子氧化态。纳米颗粒In2S3 (x = 0)和MnIn2S4 (x = 1.0)表现为球形和片状形貌,通过HR-TEM图像证实了这一点。UV-vis DRS显示随着“x”浓度从0到1.0的增加,蓝移。通过Kubelka- Munk图发现MnxIn2S3+x(0≤x≤1.0)的光学带隙(Eg)范围在2.18和2.82 eV之间。此外,在575 nm、490 nm和475 nm处,PL发射显示出与浓度相关的强宽PL波段。最后,合成的MnIn2S4纳米材料的发光特性对研究其在光电、生物成像和储能器件中的潜在应用具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploration of manganese on structural, morphological and optical properties of MnxIn2S3+x (0 ≤ x ≤ 1.0) nanoparticles

Controlling the morphology and optical properties of nanoparticles is crucial for advancing the development of various nanomaterials based functional devices, such as optoelectronic, biomedical and energy storage devices. The current work investigates structural, morphological and optical properties of MnxIn2S3+x (0 ≤ x ≤ 1.0) nanoparticles (NPs) synthesized by hot-injection method. Oleic acid and octadecene served as capping agents and non-coordinating solvents. The incorporation of Mn2+ ions was evident from the color change from yellow (In2S3) to dark brown (MnIn2S4). The structural, morphological and optical properties of nanomaterials were characterized using various spectroscopic techniques, like XRD, HR-TEM, XPS, UV-DRS and PL analysis. XRD analysis confirms the formation of cubic In2S3 and MnIn2S4 crystal structures. XPS analysis verified the electronic oxidation states of elements, which are present in MnIn2S4 NPs. In2S3 (x = 0), and MnIn2S4 (x = 1.0) nanoparticles exhibits spherical, and flake-like morphologies, which are confirmed by HR-TEM images. UV–vis DRS revealed a blue-shifts with increasing ‘x’ concentration from 0 to 1.0. The optical band gap (Eg) range of MnxIn2S3+x (0 ≤ x ≤ 1.0) was found in the range 2.18 and 2.82 eV by Kubelka- Munk plot. In addition, PL emissions shows concentration-dependent emissions with strong broad PL bands centered at 575, 490, and 475 nm. Finally, the luminescent properties of synthesized MnIn2S4 nanomaterial holds significant importance for investigating the potential applications for optoelectronic, bioimaging and energy storage devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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