Effect of hydrothermal time on Zn2+ transport channel in manganese dioxide

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yao Xu, Zu-Tao Pan, Zhi-Cai Wang, Jing-Feng Hou, Ling-Bin Kong
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Abstract

Manganese dioxide is an environmentally friendly, low-cost zinc-based energy storage electrode material. However, its practical application is easily hindered by slow diffusion kinetics and low specific capacity. During the preparation of manganese dioxide by hydrothermal method, we observed that the hydrothermal time had a significant effect on the zinc-ion transport channels in MnO2, which was manifested as a shift from 1 × 1 tunnel structure (MnO2-24h, hydrothermal for 24h) to 2 × 2 tunnel structure (MnO2-8h, hydrothermal for 8h). MnO2-8h sample achieves a faster Zn2+ migration rate due to the widening of ion channels and the microporous structure formed by the aggregation of nanowire morphology. At the same time, the sample demonstrated excellent specific capacity and stability. At a current density of 0.2 A g−1, the specific capacity is as high as 256.9 mA h g−1, which is much higher than that of the MnO2-24h sample. It also has excellent durability of 71.7% after 1000 cycles at 1 A g−1. In addition, the dynamic behavior shows that capacitive control is dominant, with the pseudo-capacitance of the MnO2-8h sample contributing up to 79% at 0.4 mV s−1.

热液时间对二氧化锰中Zn2+输运通道的影响
二氧化锰是一种环保、低成本的锌基储能电极材料。然而,它的实际应用容易受到扩散动力学缓慢和比容量低的阻碍。在水热法制备二氧化锰过程中,我们观察到水热时间对MnO2中锌离子输运通道有显著影响,表现为从1 × 1隧道结构(MnO2-24h,水热24h)转变为2 × 2隧道结构(MnO2-8h,水热8h)。由于离子通道的拓宽和纳米线形态聚集形成的微孔结构,MnO2-8h样品的Zn2+迁移速度更快。同时,样品表现出优异的比容和稳定性。在0.2 a g−1电流密度下,比容量高达256.9 mA h g−1,远高于MnO2-24h样品。在1 A g−1下循环1000次后,它也具有71.7%的优异耐久性。此外,在0.4 mV s−1下,MnO2-8h样品的伪电容贡献高达79%,电容控制占主导地位。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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