{"title":"壳层厚度和栅电压对InAs/InP芯/壳纳米线光响应的影响","authors":"Min Bai, Zhe Liu, Hui Huang, Shufeng Xia","doi":"10.1007/s10854-025-15774-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the photoresponse of InAs/InP core/shell nanowire transistor was investigated with different InP shell thickness and gate voltage. In comparison with bare InAs NWs, about 300 fold improvement on the photosensitivity was realized with InP shell thickness of 3.3 nm. For the InAs/InP core/shell nanowires, an abnormal increase of resistance under illumination was observed, which can be related to the trapping of photo excited electrons at the interface. Moreover, the photosensitivity and response speed can be simultaneously enhanced with introducing InP shell and became saturated with InP shell thicker than 3.3 nm. The photoresponse was explained via p/n-type transport behavior, radial build-in electric field as well as trapping of the electrons at InAs/InP interface.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of shell thickness and gate voltage on the photoresponse of InAs/InP core/shell nanowires\",\"authors\":\"Min Bai, Zhe Liu, Hui Huang, Shufeng Xia\",\"doi\":\"10.1007/s10854-025-15774-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, the photoresponse of InAs/InP core/shell nanowire transistor was investigated with different InP shell thickness and gate voltage. In comparison with bare InAs NWs, about 300 fold improvement on the photosensitivity was realized with InP shell thickness of 3.3 nm. For the InAs/InP core/shell nanowires, an abnormal increase of resistance under illumination was observed, which can be related to the trapping of photo excited electrons at the interface. Moreover, the photosensitivity and response speed can be simultaneously enhanced with introducing InP shell and became saturated with InP shell thicker than 3.3 nm. The photoresponse was explained via p/n-type transport behavior, radial build-in electric field as well as trapping of the electrons at InAs/InP interface.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 27\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15774-z\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15774-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effects of shell thickness and gate voltage on the photoresponse of InAs/InP core/shell nanowires
In this work, the photoresponse of InAs/InP core/shell nanowire transistor was investigated with different InP shell thickness and gate voltage. In comparison with bare InAs NWs, about 300 fold improvement on the photosensitivity was realized with InP shell thickness of 3.3 nm. For the InAs/InP core/shell nanowires, an abnormal increase of resistance under illumination was observed, which can be related to the trapping of photo excited electrons at the interface. Moreover, the photosensitivity and response speed can be simultaneously enhanced with introducing InP shell and became saturated with InP shell thicker than 3.3 nm. The photoresponse was explained via p/n-type transport behavior, radial build-in electric field as well as trapping of the electrons at InAs/InP interface.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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