{"title":"添加BiFeO3低温烧结PIN-PSN-PT陶瓷的电学性能","authors":"Menghao Wang, Xiaoshuai Zuo, Pinyang Fang, Yujie Jia, Shuyuan Wang, Wei Long, Zengzhe Xi","doi":"10.1007/s10854-025-15817-5","DOIUrl":null,"url":null,"abstract":"<div><p>Ternary ceramics 0.105PIN-0.465PSN-0.43PT (PIN-PSN-PT) with BiFeO<sub>3</sub> addition were prepared using the two-step sintering method. Effect of BiFeO<sub>3</sub> addition on the electrical properties and temperature stability of PIN-PSN-PT ceramics was investigated. The sintering temperatures could be reduced significantly from 1250 °C for PIN-PSN-PT ceramic to 900 °C for PIN-PSN-PT ceramics with BiFeO<sub>3</sub> addition. For the PIN-PSN-PT ceramics with BiFeO<sub>3</sub> ceramics, the densified microstructure could be obtained at the low temperature of 900 °C. A small amount of BiFeO<sub>3</sub> addition could improve the phase transition temperature and piezoelectric properties. The best comprehensive electrical performances were obtained in PIN-PSN-PT-0.1wt%BiFeO<sub>3</sub> ceramics with Curie temperature (<i>T</i><sub>c</sub> ~ 290 °C), piezoelectric constant (<i>d</i><sub>33</sub> ~ 465 pC/N), coercivity field (<i>E</i><sub>c</sub> ~ 11.41 kV/cm), plane electromechanical coupling coefficient (<i>k</i><sub>p</sub> ~ 0.549) and mechanical quality factor (<i>Q</i><sub>m</sub> ~ 125). Perfect temperature stability of piezoelectric and electromechanical properties was also remained below Curie temperature.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical properties of low-temperature sintered PIN-PSN-PT ceramics with BiFeO3 addition\",\"authors\":\"Menghao Wang, Xiaoshuai Zuo, Pinyang Fang, Yujie Jia, Shuyuan Wang, Wei Long, Zengzhe Xi\",\"doi\":\"10.1007/s10854-025-15817-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Ternary ceramics 0.105PIN-0.465PSN-0.43PT (PIN-PSN-PT) with BiFeO<sub>3</sub> addition were prepared using the two-step sintering method. Effect of BiFeO<sub>3</sub> addition on the electrical properties and temperature stability of PIN-PSN-PT ceramics was investigated. The sintering temperatures could be reduced significantly from 1250 °C for PIN-PSN-PT ceramic to 900 °C for PIN-PSN-PT ceramics with BiFeO<sub>3</sub> addition. For the PIN-PSN-PT ceramics with BiFeO<sub>3</sub> ceramics, the densified microstructure could be obtained at the low temperature of 900 °C. A small amount of BiFeO<sub>3</sub> addition could improve the phase transition temperature and piezoelectric properties. The best comprehensive electrical performances were obtained in PIN-PSN-PT-0.1wt%BiFeO<sub>3</sub> ceramics with Curie temperature (<i>T</i><sub>c</sub> ~ 290 °C), piezoelectric constant (<i>d</i><sub>33</sub> ~ 465 pC/N), coercivity field (<i>E</i><sub>c</sub> ~ 11.41 kV/cm), plane electromechanical coupling coefficient (<i>k</i><sub>p</sub> ~ 0.549) and mechanical quality factor (<i>Q</i><sub>m</sub> ~ 125). Perfect temperature stability of piezoelectric and electromechanical properties was also remained below Curie temperature.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 27\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15817-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15817-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Electrical properties of low-temperature sintered PIN-PSN-PT ceramics with BiFeO3 addition
Ternary ceramics 0.105PIN-0.465PSN-0.43PT (PIN-PSN-PT) with BiFeO3 addition were prepared using the two-step sintering method. Effect of BiFeO3 addition on the electrical properties and temperature stability of PIN-PSN-PT ceramics was investigated. The sintering temperatures could be reduced significantly from 1250 °C for PIN-PSN-PT ceramic to 900 °C for PIN-PSN-PT ceramics with BiFeO3 addition. For the PIN-PSN-PT ceramics with BiFeO3 ceramics, the densified microstructure could be obtained at the low temperature of 900 °C. A small amount of BiFeO3 addition could improve the phase transition temperature and piezoelectric properties. The best comprehensive electrical performances were obtained in PIN-PSN-PT-0.1wt%BiFeO3 ceramics with Curie temperature (Tc ~ 290 °C), piezoelectric constant (d33 ~ 465 pC/N), coercivity field (Ec ~ 11.41 kV/cm), plane electromechanical coupling coefficient (kp ~ 0.549) and mechanical quality factor (Qm ~ 125). Perfect temperature stability of piezoelectric and electromechanical properties was also remained below Curie temperature.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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