Synthesis of Fe-doped ZnSxSe1−x thin films at low temperature: Impact of doping concentration on its crystallinity, morphology, optical, and electrical properties

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-21 DOI:10.1007/s10854-025-15783-y

Mridusmita Boruah, Prasanta Kumar Saikia

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引用次数: 0

Abstract

Fe-doped ZnS_xSe_1−x thin films at different concentrations of Fe (0.42, 0.88, 2.05, and 3.99 at%) have been synthesized using a simple, cost-effective solution-based technique. X-ray diffraction studies and high-resolution transmission electron microscope micrographs revealed that the films were polycrystalline and had a cubic zinc blende structure. The crystallite size decreased from 5 to 3 nm with increasing Fe concentration. The lattice strain calculated through the Williamson-Hall plot increases with the increase of Fe concentration. Field emission scanning electron microscope images revealed homogeneous and compact surface morphology at lower doping concentrations. The presence of spherical-shaped grains at higher doping concentration was confirmed by transmission electron microscope images. The optical band gap decreases from 3.39 to 3.27 eV with increased Fe concentration. An improvement in the electrical conductivity values with Fe doping concentration was observed for the films. Thus, Fe doping has shown some significant impact on various properties of ZnSSe films used in various optoelectronic applications.

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fe掺杂ZnSxSe1−x薄膜的低温合成：掺杂浓度对其结晶度、形貌、光学和电学性能的影响

采用一种简单、经济的基于溶液的技术合成了不同铁浓度（0.42、0.88、2.05和3.99 at%）的掺铁ZnSxSe1−x薄膜。x射线衍射研究和高分辨率透射电子显微镜显微照片显示，薄膜是多晶的，具有立方锌闪锌矿结构。随着铁浓度的增加，晶粒尺寸从5 nm减小到3 nm。通过Williamson-Hall图计算的晶格应变随铁浓度的增加而增加。场发射扫描电镜图像显示，在低掺杂浓度下，表面形貌均匀致密。在高掺杂浓度下，透射电镜图像证实了球形颗粒的存在。随着Fe浓度的增加，光学带隙从3.39 eV减小到3.27 eV。随着Fe掺杂浓度的增加，薄膜的电导率有所提高。因此，Fe掺杂对用于各种光电应用的ZnSSe薄膜的各种性能产生了重大影响。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.