Nisha Devi, Tariq Mustafa, Vikrant Singh, K. K. Bamzai
{"title":"Structural, optical, dielectric and thermoelectric properties on heavy rare earth dysprosium–erbium (Dy–Er)-doped strontium titanate ceramics","authors":"Nisha Devi, Tariq Mustafa, Vikrant Singh, K. K. Bamzai","doi":"10.1007/s10854-025-15760-5","DOIUrl":null,"url":null,"abstract":"<div><p>Heavy rare earth dysprosium- and erbium-doped strontium titanate ceramics were prepared by using conventional solid-state reaction method. The composition, microstructure, spectroscopic, dielectric and thermoelectric properties are characterized to identify the influence of rare earth ions on the strontium titanate. The obtained result reveals that the structural changes take place from cubic to pyrochlore cubic phase with the increase of Dy–Er concentration in strontium titanate. The interaction of rare earth ions with strontium titanate reduces the band gap from 3.24 to 2.8 eV. The dielectric response as a function of frequency and temperature reveals detailed electrical properties of the material. AC conductivity increases with temperature due to enhanced mobility of hopping charge carriers and follows the universal power law with frequency. The activation energy decreases with increasing frequency. Frequency exponent (s) values below unity indicate translational motion with sudden hopping transitions. The real (M′) and imaginary (M″) parts of the electrical modulus confirm thermal activation and suggest a transition from long-range to short-range mobility with rising frequency. With the addition of rare earth ions, the Seebeck coefficient increases, whereas the thermal conductivity decreases, which leads to increase in the figure of merit with a maximum value of 0.20, 0.21, 0.23, 0.22 and 0.087 at 450 °C for ST, 25%, 50%, 75% and 100% doped compositions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 26","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15760-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Heavy rare earth dysprosium- and erbium-doped strontium titanate ceramics were prepared by using conventional solid-state reaction method. The composition, microstructure, spectroscopic, dielectric and thermoelectric properties are characterized to identify the influence of rare earth ions on the strontium titanate. The obtained result reveals that the structural changes take place from cubic to pyrochlore cubic phase with the increase of Dy–Er concentration in strontium titanate. The interaction of rare earth ions with strontium titanate reduces the band gap from 3.24 to 2.8 eV. The dielectric response as a function of frequency and temperature reveals detailed electrical properties of the material. AC conductivity increases with temperature due to enhanced mobility of hopping charge carriers and follows the universal power law with frequency. The activation energy decreases with increasing frequency. Frequency exponent (s) values below unity indicate translational motion with sudden hopping transitions. The real (M′) and imaginary (M″) parts of the electrical modulus confirm thermal activation and suggest a transition from long-range to short-range mobility with rising frequency. With the addition of rare earth ions, the Seebeck coefficient increases, whereas the thermal conductivity decreases, which leads to increase in the figure of merit with a maximum value of 0.20, 0.21, 0.23, 0.22 and 0.087 at 450 °C for ST, 25%, 50%, 75% and 100% doped compositions.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.