双钙钛矿氧化物Ba \(_{2}\) Ce(Bi,Sb)O的电泳沉积膜和光催化活性\(_{6}\)

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hanako Sakou, Kazuto Hata, Michiaki Matsukawa, Minami Arakida, Kazume Nishidate, Sumio Aisawa, Kazuto Akiba, Dayal Chandra Roy
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引用次数: 0

摘要

研究了双钙钛矿氧化物Ba \(_{2}\) Ce(Bi \(_{1-x}\) Sb \(_{x}\))O \(_{6}\)的电泳沉积膜、晶体结构、光学性质和光催化活性。以细粉为原料,采用电泳沉积技术合成了Ba \(_{2}\) Ce(Bi,Sb)O \(_{6}\)光催化氧化膜。母样结晶为单斜相单相结构。对于中间体和端元样品,我们的制备技术稳定了多相单斜和立方结构。对x = 0.0和1.0粉末样品进行了x射线光电子能谱测量,以检测b位阳离子的价态。通过Kubelka-Munk变换的光谱测量,估计x=0.0时的间接带隙能为0.80 eV, x=1.0时的间接带隙能为2.82 eV。这些发现可以用密度泛函理论的能带结构来解释。我们发现,带结构、晶体尺寸和多价b位阳离子在观察到的光催化改善中起着重要作用。讨论了铈基沉积厚膜的光催化性能,并与粉末样品的性能进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrophoretic deposition films and photocatalytic activities for double-perovskite oxide Ba\(_{2}\)Ce(Bi,Sb)O\(_{6}\)

Electrophoretic deposition films, crystal structures, optical properties, and photocatalytic activities for double-perovskite oxide Ba\(_{2}\)Ce(Bi\(_{1-x}\)Sb\(_{x}\))O\(_{6}\) were demonstrated. Photocatalytic oxide films of Ba\(_{2}\)Ce(Bi,Sb)O\(_{6}\) were synthesized by electrophoretic deposition technique from fine powder samples. The parent sample crystalized in a monoclinic single-phase structure. For the intermediate and end-member samples, multiple phases accompanied by monoclinic and cubic structures were stabilized in our preparation technique. X-ray photoelectron spectroscopy measurements on the x = 0.0 and 1.0 powder samples were performed, to examine the valence state of B-site cations. Indirect bandgap energies were estimated to be 0.80 eV at x=0.0 and 2.82 eV at x=1.0 from optical spectrum measurements through Kubelka–Munk transformation. These findings were well explained by band structures on the basis of density functional theory. We revealed that the band structures, crystalline sizes, and multivalent B-site cations play a significant role in the observed photocatalytic improvements. Photocatalytic performances of Ce-based deposition thick films were discussed in comparison with their properties of powder samples.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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