Sol–gel synthesis and characterization of lead-free Ba0.85Sr0.15TiO3-based thin-film capacitors with enhanced dielectric and energy storage performance

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A. Selmi, A. E. Maayoufi, F. Jomni, J.-C. Carru
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引用次数: 0

Abstract

Lead-free Ba0.85Sr0.15TiO3 (BST) thin films ranging in thicknesses from 50 to 600 nm were deposited on platinized silicon (Pt/SiO2/Si) substrates using a spin-coating technique, successfully creating Au/BST/Pt thin capacitors. X-ray diffraction and scanning electron microscopy revealed that the BST films were crack-free, dense, and crystallized with a polycrystalline tetragonal perovskite structure. The thickness-dependent dielectric, leakage current, ferroelectric, and energy storage properties of Ba0.85Sr0.15TiO3 were analyzed at room temperature. As the BST film thickness increased from 50 to 600 nm, the dielectric permittivity of films also increased from about 40 to over 320, caused by the interfacial dead layers between films and electrodes. In contrast, both the leakage current density and the dielectric losses decreased with increasing film thickness. The figure of merit shows a remarkable enhancement from 7 to 38 with the increase in thickness from 50 to 600 nm. Experimental results indicated that increases in dielectric permittivity and tunability are consistently linked to a low dielectric loss, which practically enhances the figure of merit. Additionally, the study of energy storage performance across different films revealed high and promising values for both efficiency and recoverable energy density. The highest efficiency, 70%, was achieved with a 400 nm film, which also exhibited a significant energy storage density of 7 J/cm3. These BST thin films thus show great potential as materials for manufacturing electrostatic capacitors for electrical energy storage.

具有增强介电和储能性能的无铅ba0.85 sr0.15 tio3薄膜电容器的溶胶-凝胶合成和表征
采用自旋镀膜技术在铂化硅(Pt/SiO2/Si)衬底上沉积了厚度为50 ~ 600 nm的无铅Ba0.85Sr0.15TiO3 (BST)薄膜,成功制备了Au/BST/Pt薄电容器。x射线衍射和扫描电子显微镜显示,BST薄膜无裂纹,致密,结晶为多晶四方钙钛矿结构。在室温下分析了Ba0.85Sr0.15TiO3的介电性能、漏电流、铁电性能和储能性能。当BST薄膜厚度从50 nm增加到600 nm时,薄膜的介电常数也从40左右增加到320以上,这是由于薄膜与电极之间的界面死层造成的。泄漏电流密度和介电损耗随膜厚的增加而减小。当厚度从50 nm增加到600 nm时,性能值从7显著增加到38。实验结果表明,介质介电常数和可调性的增加始终与低介电损耗有关,这实际上提高了优点系数。此外,对不同薄膜的储能性能的研究表明,在效率和可回收能量密度方面都具有很高的价值。400 nm薄膜的效率最高,达到70%,其储能密度也达到7 J/cm3。因此,这些BST薄膜作为制造用于电能存储的静电电容器的材料显示出巨大的潜力。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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