Nano to macro transition of gold nanoparticles prior to sintering

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-10-01 DOI:10.1007/s10854-025-15854-0

Paige Summers, Alexander Angeloski, Michael B. Cortie, Richard Wuhrer, Andrew M. McDonagh

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Abstract

The thermal behaviour of ligand-stabilised gold nanoparticles (AuNPs) is an important consideration when using these materials to form gold films via sintering. AuNPs stabilised with butanethiol and hexadecanethiol ligands displayed quite different properties upon heating up to their sintering temperatures. Films of AuNPs bearing the longer chain stabilising ligand hexadecanethiol become liquids at 56 °C. This temperature corresponds to the melting point of dihexadecyl disulfide, a known product that forms when such AuNPs are heated. No liquid phase was observed for butanethiol-stabilised AuNPs at any temperature. Films of the hexadecanethiol-stabilised AuNPs had high resistances (> 100 MΩ) at room temperature and the short-chain butanethiol-stabilised AuNPs had resistances in the kΩ range. Small-angle X-ray scattering data showed that the butanethiol-stabilised AuNPs begin to coarsen at ~ 140 °C whilst the hexadecanethiol particles began to coarsen ~ 90 °C.

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烧结前金纳米颗粒的纳米到宏观转变

当使用这些材料通过烧结形成金膜时，配体稳定金纳米颗粒（AuNPs）的热行为是一个重要的考虑因素。用丁硫醇和十六硫醇配体稳定的AuNPs在加热到烧结温度时表现出完全不同的性质。含有长链稳定配体十六烷硫醇的AuNPs薄膜在56°C时变成液体。这个温度对应于二十六进基二硫化物的熔点，这是一种已知的产物，当这种aunp被加热时形成。丁硫醇稳定的AuNPs在任何温度下均未观察到液相。十六烷基硫醇稳定的AuNPs薄膜在室温下具有高电阻（> 100 MΩ），而短链丁烷硫醇稳定的AuNPs具有kΩ范围内的电阻。小角度x射线散射数据表明，丁硫醇稳定的AuNPs在~ 140℃开始变粗，而十六硫醇颗粒在~ 90℃开始变粗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.